Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Application : Audio, Series Regulator and General Purpose

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A • Complement to Type 2SD2401 • Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS • Designed for audi

PNP SILICON EPITAXIAL TRANSISTOR

FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.35 V • Complementary to 2SD2402

Silicon PNP Epitaxial Planar

■ Features ● Low collector-emitter saturation voltage ● Complementary to 2SD2402

Small Signal Bipolar Transistors

Support is limited to customers who have already adopted these products. • Low VCE(sat): VCE(sat)1 ≤ −0.35 V\n• Complementary to 2SD2402;

Small Signal Bipolar Transistors

Support is limited to customers who have already adopted these products. • Low VCE(sat): VCE(sat)1 ≤ −0.4 V\n• Complementary to 2SD2403;

Silicon PNP Epitaxial Planar

■ Features ● Low collector-emitter saturation voltage ● Complementary to 2SD2403

PNP SILICON EPITAXIAL TRANSISTOR

FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.4 V • Complementary to 2SD2403

Silicon PNP epitaxial planar type(For low-frequency output amplification)

For low-frequency output amplification ■ Features ● Possible to solder radiation fin directly to printed cicuit boad ● Type with universal characteristics ● Collector breakdown voltage: VCBO/VCEO = –50V ● Collector current: IC = –2A

Silicon PNP Epitaxial Planar Type

Features Possible to tsolder radiation fin directly to printed circuit boad. Type with universal characteristics. High collector-base voltage (Emitter open) VCBO. High collector-emitter voltage (Base open) VCEO. Large collector current IC.

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP epitaxial planar type Power Transistor

For low-frequency output amplification■ ● Possible to solder radiation fin directly to printed cicuit boad\n● Type with universal characteristics\n● Collector breakdown voltage: VCBO/VCEO = –50V\n● Collector current: IC = –2A;

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • New package with dimensions in between those of small signal and power signal package • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SD242

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1578 features high current capacity in small dimension and is ideal for DC/DC converters and mortor drivers. FEATURES • New package with dimensions in between those of small signal and power

Silicon PNP Epitaxial Planar Transistor

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封装/外壳：3-ESIP 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 150V 12A MT-200 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Epitaxial Planar Transistor

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Old Company Name in Catalogs and Other Documents

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PNP Transistors

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PNP SILICON EPITAXIAL TRANSISTOR

文件：175.73 Kbytes Page：6 Pages

PNP Transistors

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PNP Transistors

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PNP Transistors

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Old Company Name in Catalogs and Other Documents

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PNP Transistors

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PNP Transistors

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PNP Transistors

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PNP Transistors

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PNP Transistors

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封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 2A U-G2 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Transistors

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PNP Transistors

文件：454.95 Kbytes Page：1 Pages