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2SB157晶体管资料
2SB157别名:2SB157三极管、2SB157晶体管、2SB157晶体三极管
2SB157生产厂家:日本松下公司
2SB157制作材料:Ge-PNP
2SB157性质:微型 (Min)_低频或音频放大 (LF)
2SB157封装形式:直插封装
2SB157极限工作电压:7V
2SB157最大电流允许值:0.005A
2SB157最大工作频率:<1MHZ或未知
2SB157引脚数:3
2SB157最大耗散功率:0.01W
2SB157放大倍数:β=35
2SB157图片代号:D-28
2SB157vtest:7
2SB157htest:999900
- 2SB157atest:0.005
2SB157wtest:0.01
2SB157代换 2SB157用什么型号代替:AC129,OC57,3AX51A,
2SB157价格
参考价格:¥21.8241
型号:2SB1570 品牌:Sanken 备注:这里有2SB157多少钱,2025年最近7天走势,今日出价,今日竞价,2SB157批发/采购报价,2SB157行情走势销售排行榜,2SB157报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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SiliconPNPEpitaxialPlanarTransistor(Audio,SeriesRegulatorandGeneralPurpose) SiliconPNPEpitaxialPlanarTransistor(Complementtotype2SD2401) Application:Audio,SeriesRegulatorandGeneralPurpose | SankenSanken electric 三垦三垦电气株式会社 | |||
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=-150V(Min) •Low-CollectorSaturationVoltage-:VCE(sat)=-2.5V(Max.)@IC=-7A •ComplementtoType2SD2401 •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperatio APPLICATIONS •Designedforaudi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PNPSILICONEPITAXIALTRANSISTOR FEATURES •LowVCE(sat):VCE(sat)1≤−0.35V •Complementaryto2SD2402 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SiliconPNPEpitaxialPlanar ■Features ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2402 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
SiliconPNPEpitaxialPlanar ■Features ●Lowcollector-emittersaturationvoltage ●Complementaryto2SD2403 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPSILICONEPITAXIALTRANSISTOR FEATURES •LowVCE(sat):VCE(sat)1≤−0.4V •Complementaryto2SD2403 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SiliconPNPepitaxialplanartype(Forlow-frequencyoutputamplification) Forlow-frequencyoutputamplification ■Features ●Possibletosolderradiationfindirectlytoprintedcicuitboad ●Typewithuniversalcharacteristics ●Collectorbreakdownvoltage:VCBO/VCEO=–50V ●Collectorcurrent:IC=–2A | PanasonicPanasonic Semiconductor 松下松下电器 | |||
SiliconPNPEpitaxialPlanarType Features Possibletotsolderradiationfindirectlytoprintedcircuitboad. Typewithuniversalcharacteristics. Highcollector-basevoltage(Emitteropen)VCBO. Highcollector-emittervoltage(Baseopen)VCEO. LargecollectorcurrentIC. | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=120(Min)@IC=-0.2A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=120(Min)@IC=-0.2A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=120(Min)@IC=-0.2A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=120(Min)@IC=-0.2A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SILICONTRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORLOW-FREQUENCYPOWERAMPLIFIERSANDMID-SPEEDSWITCHING FEATURES •Newpackagewithdimensionsinbetweenthoseofsmallsignal andpowersignalpackage •Highcurrentcapacitance •Lowcollectorsaturationvoltage •Complementarytransistorwith2SD242 | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
PNPSILICONEPITAXIALTRANSISTOR(DARLINGTONCONNECTION)FORLOW-FREQUENCYPOWERAMPLIFIERSANDMID-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTOR FORLOW-FREQUENCYPOWERAMPLIFIERSANDMID-SPEEDSWITCHING The2SB1578featureshighcurrentcapacityinsmalldimensionandisidealforDC/DCconvertersandmortordrivers. FEATURES •Newpackagewithdimensionsinbetweenthoseofsmallsignal andpower | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | |||
SiliconPNPEpitaxialPlanarTransistor 文件:35.47 Kbytes Page:1 Pages | SankenSanken electric 三垦三垦电气株式会社 | |||
封装/外壳:3-ESIP 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP DARL 150V 12A MT-200 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | SankenSanken electric 三垦三垦电气株式会社 | |||
SiliconPNPEpitaxialPlanarTransistor 文件:35 Kbytes Page:1 Pages | SankenSanken electric 三垦三垦电气株式会社 | |||
OldCompanyNameinCatalogsandOtherDocuments 文件:175.73 Kbytes Page:6 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
PNPTransistors 文件:1.1802 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPSILICONEPITAXIALTRANSISTOR 文件:175.73 Kbytes Page:6 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
PNPTransistors 文件:1.1802 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.1802 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.1802 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
OldCompanyNameinCatalogsandOtherDocuments 文件:177.64 Kbytes Page:6 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | |||
PNPTransistors 文件:1.18301 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.18301 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.18301 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.18301 Mbytes Page:3 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:454.95 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 2A U-G2 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | PanasonicElectronicComponents Panasonic Electronic Components | |||
PNPTransistors 文件:454.95 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:454.95 Kbytes Page:1 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |
2SB157产品属性
- 类型
描述
- 型号
2SB157
- 制造商
Sanken Electric Co Ltd
- 功能描述
TRANS PNP DARL 150V 12A MT200
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
23+ |
SOT-89 |
15000 |
正品原装货价格低 |
|||
NEC优势 |
SOT-89 |
2682 |
正品原装--自家现货-实单可谈 |
||||
NEC |
22+ |
SOT89 |
20000 |
保证原装正品,假一陪十 |
|||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
24+ |
SOT-89 |
33500 |
全新进口原装现货,假一罚十 |
|||
NEC |
24+ |
SOT-89 |
502928 |
免费送样原盒原包现货一手渠道联系 |
|||
NEC |
24+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
NEC |
23+ |
SOT-89 |
8293 |
||||
NEC |
24+ |
SOT-89 |
65200 |
一级代理/放心采购 |
|||
NK/南科功率 |
2025+ |
SOT-89 |
986966 |
国产 |
2SB157规格书下载地址
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2SB157数据表相关新闻
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支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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