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2SB149晶体管资料
2SB149别名：2SB149三极管、2SB149晶体管、2SB149晶体三极管
2SB149生产厂家：日本东芝公司
2SB149制作材料：Ge-PNP
2SB149性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SB149封装形式：直插封装
2SB149极限工作电压：40V
2SB149最大电流允许值：8A
2SB149最大工作频率：<1MHZ或未知
2SB149引脚数：2
2SB149最大耗散功率：25W
2SB149放大倍数：
2SB149图片代号：E-44
2SB149vtest：40
2SB149htest：999900
- 2SB149atest：8
2SB149wtest：25
2SB149代换 2SB149用什么型号代替：AL100,AL101,2N2288,2N2291,2N3511,21N3513,3AD54A,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SiliconPNPepitaxialplanartypeDarlington(Forpoweramplification) SiliconPNPepitaxialplanartypedarlington Forpoweramplification Complementaryto2SD2250 ■Features •Optimumfor80WHiFioutput •HighforwardcurrenttransferratiohFE •Lowcollector-emittersaturationvoltageVCE(sat) | PanasonicPanasonic Corporation 松下松下电器 |  |   | |
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3PLpackage •Complementtotype2SD2250 •HighDCcurrentgain •Lowcollectorsaturationvoltage •DARLINGTON APPLICATIONS •Forpoweramplification •OptimumforHiFioutputapplications | SAVANTIC Savantic, Inc. |  | | |
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain-:hFE=5000(Min)@lc=-6A •Low-CollectorSaturationVoltage-:VCE(sat)=-2.5V(Max.)@lc=-6A •ComplementtoType2SD2250 APPLICATIONS •Designedforpoweramplifierapplications •OptimumforSOWHiFioutputapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain-:hFE=5000(Min)@lc=-6A •Low-CollectorSaturationVoltage-:VCE(sat)=-2.5V(Max.)@lc=-6A •ComplementtoType2SD2250 APPLICATIONS •Designedforpoweramplifierapplications •OptimumforSOWHiFioutputapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain-:hFE=5000(Min)@IC=-5A •Low-CollectorSaturationVoltage-:VCE(sat)=-2.5V(Max.)@IC=-5A •ComplementtoType2SD2254 APPLICATIONS •Designedforpoweramplifierapplications. •Optimumfor60WHiFioutputapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
iscSiliconPNPDarlingtonPowerTransistor2SB1492 DESCRIPTION •HighDCCurrentGain-:hFE=5000(Min)@IC=-5A •Low-CollectorSaturationVoltage-:VCE(sat)=-2.5V(Max.)@IC=-5A •ComplementtoType2SD2254 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedf | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconPNPepitaxialplanartypeDarlington(Forpoweramplification) SiliconPNPepitaxialplanartypeDarlington Forpoweramplification Complementaryto2SD2254 ■Features ●Optimumfor60WHiFioutput ●HighfowardcurrenttransferratiohFE:5000to30000 ●LowcollectortoemittersaturationvoltageVCE(sat): | PanasonicPanasonic Corporation 松下松下电器 | | | |
ForpoweramplificationComplementaryto2SD2255 SiliconPNPepitaxialplanartypeDarlington Forpoweramplification Complementaryto2SD2255 ■Features ●Optimumfor60WHiFioutput ●HighfowardcurrenttransferratiohFE:5000to30000 ●LowcollectortoemittersaturationvoltageVCE(sat): | PanasonicPanasonic Corporation 松下松下电器 | | | |
SiliconPNPTripleDiffused Application LowfrequencypoweramplifiercomplementaryPairwith2SD2256 | HitachiHitachi, Ltd. 日立公司 |  | | |
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2257 •HighDCcurrentgain. •Lowsaturationvoltage. •DARLINGTON APPLICATIONS •Highpowerswitchingapplications | SAVANTIC Savantic, Inc. | | | |
TRANSISTOR(HIGHPOWERSWITCHINGAPPLICATIONS) High-PowerSwitchingApplications •HighDCcurrentgain:hFE=2000(min)(VCE=−2V,IC=−2A) •Lowsaturationvoltage:VCE(sat)=−1.5V(max)(IC=−1.5A) •Complementaryto2SD2257 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 |  | | |
SiliconPNPDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain- :hFE=2000(Min)@(VCE=-2V,lc=-2A) •Low-CollectorSaturationVoltage- :VCE(satr-1.5V(Max.)@lc=-1.5A •ComplementtoType2SD2257 APPLICATIONS •Designedforhighpowerswitchingapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
iscSiliconPNPDarlingtonPowerTransistor DESCRIPTION •HighDCCurrentGain- :hFE=2000(Min)@(VCE=-2V,IC=-2A) •Low-CollectorSaturationVoltage- :VCE(sat)=-1.5V(Max.)@IC=-1.5A •ComplementtoType2SD2257 APPLICATIONS •Designedforhighpowerswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE) | ROHMRohm Semiconductor 罗姆罗姆半导体集团 |  | | |
SiliconPNPPowerTransistors 文件：116.37 Kbytes Page：3 Pages | SAVANTIC Savantic, Inc. | | | |
SiliconPNPTripleDiffused 文件：149.5 Kbytes Page：7 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
SiliconPNPPowerTransistors 文件：214.8 Kbytes Page：3 Pages | SAVANTIC Savantic, Inc. | | | |
SiliconPNPEpitaxialType 文件：137.62 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | | |
封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS PNP 100V 3A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage |  | | |
封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS PNP 100V 3A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage | | | |
SiliconPNPEpitaxialType 文件：137.62 Kbytes Page：4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | | |
2SB149产品属性
- 类型
描述
- 型号
2SB149
- 制造商
Toshiba America Electronic Components
- 功能描述
Semi, Bipolar, Transistor, PNP, Power, D
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
22+ |
TO-220F |
2715 |
原装现货假一赔十 |
|||
TOSHIBA/东芝 |
23+ |
NA/ |
1810 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TOSHIBA |
2022+ |
SOT-220F |
5345 |
授权代理分销商,现货库存可持续供货! |
|||
TOSHIBA |
1844+ |
NA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TOSHIBA/东芝 |
2022 |
TO-220F |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
TOSHIBA |
22+ |
TO-220F |
5100 |
||||
TOSHIBA |
04+ |
TO-220F |
100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
||||
TO-220F |
10000 |
全新 |
|||||
TOSHIBA/东芝 |
TO-220F |
608900 |
原包原标签100%进口原装常备现货! |
2SB149芯片相关品牌
2SB149规格书下载地址
2SB149参数引脚图相关
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- 2SB1474(F5)
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- 2SB1473
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- 2SB1469
- 2SB1468
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- 2SB1463
- 2SB1462
- 2SB1461
- 2SB1457
- 2SB1455
- 2SB1454
- 2SB1453
- 2SB1452
2SB149数据表相关新闻
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2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下：·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息）·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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