2SB1495晶体三极管资料使用说明书全球贸易商-IC资料网

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2SB149晶体管资料

2SB149别名：2SB149三极管、2SB149晶体管、2SB149晶体三极管
2SB149生产厂家：日本东芝公司
2SB149制作材料：Ge-PNP
2SB149性质：低频或音频放大（LF）_开关管（S）_功率放大（L
2SB149封装形式：直插封装
2SB149极限工作电压：40V
2SB149最大电流允许值：8A
2SB149最大工作频率：<1MHZ或未知
2SB149引脚数：2
2SB149最大耗散功率：25W
2SB149放大倍数：
2SB149图片代号：E-44
2SB149vtest：40
2SB149htest：999900
2SB149atest：8
2SB149wtest：25

2SB149代换 2SB149用什么型号代替：AL100,AL101,2N2288,2N2291,2N3511,21N3513,3AD54A,

型号	功能描述	生产厂家企业	LOGO
2SB1490	Silicon PNP epitaxial planar type Darlington(For power amplification) Silicon PNP epitaxial planar type darlington For power amplification Complementary to 2SD2250 ■ Features • Optimum for 80 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)	Panasonic 松下	Panasonic
2SB1490	Silicon PNP Power Transistors DESCRIPTION • With TO-3PL package • Complement to type 2SD2250 • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For power amplification • Optimum for HiFi output applications	SAVANTIC	SAVANTIC
2SB1490	isc Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -6A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@lc= -6A • Complement to Type 2SD2250 APPLICATIONS • Designed for power amplifier applications • Optimum for SOW HiFi output applications.	ISC 无锡固电	ISC
2SB1490	Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -6A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@lc= -6A • Complement to Type 2SD2250 APPLICATIONS • Designed for power amplifier applications • Optimum for SOW HiFi output applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1492	Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@IC= -5A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A • Complement to Type 2SD2254 APPLICATIONS • Designed for power amplifier applications. • Optimum for 60W HiFi output applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1492	isc Silicon PNP Darlington Power Transistor 2SB1492 DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@IC= -5A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -5A • Complement to Type 2SD2254 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed f	ISC 无锡固电	ISC
2SB1492	Silicon PNP epitaxial planar type Darlington(For power amplification) Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2254 ■ Features ● Optimum for 60W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):	Panasonic 松下	Panasonic
2SB1493	For power amplification Complementary to 2SD2255 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2255 ■ Features ● Optimum for 60W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):	Panasonic 松下	Panasonic
2SB1494	Silicon PNP Triple Diffused Application Low frequency power amplifier complementary Pair with 2SD2256	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1495	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2257 • High DC current gain. • Low saturation voltage. • DARLINGTON APPLICATIONS • High power switching applications	SAVANTIC	SAVANTIC
2SB1495	TRANSISTOR (HIGH POWER SWITCHING APPLICATIONS) High-Power Switching Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −2 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A) • Complementary to 2SD2257	TOSHIBA 东芝	TOSHIBA
2SB1495	Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, lc=-2A) • Low-Collector Saturation Voltage- : VCE(satr -1.5V(Max.)@lc= -1.5A • Complement to Type2SD2257 APPLICATIONS • Designed for high power switchingapplications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1495	isc Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) • Low-Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@IC= -1.5A • Complement to Type 2SD2257 APPLICATIONS • Designed for high power switching applications.	ISC 无锡固电	ISC
2SB1496	TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)	ROHM 罗姆	ROHM
2SB1490	Silicon PNP Power Transistors 文件：116.37 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1492	Trans Darlington PNP 110V 6A	ETC 知名厂家	ETC
2SB1493	For power amplification Complementary to 2SD2255	Panasonic 松下	Panasonic
2SB1494	Silicon PNP Triple Diffused 文件：149.5 Kbytes Page：7 Pages	RENESAS 瑞萨	RENESAS
2SB1495	Silicon PNP Power Transistors 文件：214.8 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1495	Silicon PNP Epitaxial Type 文件：137.62 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SB1495,Q(J	封装/外壳：TO-220-3 整包包装：散装描述：TRANS PNP 100V 3A TO220NIS 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SB1495,Q(M	封装/外壳：TO-220-3 整包包装：散装描述：TRANS PNP 100V 3A TO220NIS 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SB1495_06	Silicon PNP Epitaxial Type 文件：137.62 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SB1497	Transistor-Bipolar Small Signal Transistors	RENESAS 瑞萨	RENESAS

2SB149产品属性

类型
描述
型号
2SB149
制造商
Toshiba America Electronic Components
功能描述
Semi, Bipolar, Transistor, PNP, Power, D

2SB149供应商更多...

更新时间：2025-12-25 11:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
艾睿（深圳）半导体有限公司	2SB1495	TOSHIBA/东芝	2447	TO-220	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价
深圳市威尔健半导体有限公司	2SB1495MOS(场效应管)	TOSHIBA/东芝	23+	TO-220F	50000	全新原装正品现货,支持订货	询价
深圳市一线半导体有限公司	2SB1495		24+	TO-220F	10000	全新	询价
深圳市鹏和科技有限公司	2SB1502	PANASONIC	24+	TO-3PL	5000	全现原装公司现货	询价
深圳市达恩科技有限公司	2SB1495(Q)	Toshiba	24+	NA	3000	进口原装正品优势供应	询价
深圳市富芯乐电子科技有限公司	2SB1495	TOSHIBA	24+	TO-220F	5100	只做原装正品现货欢迎来电查询15919825718	询价
深圳市河锋鑫科技有限公司	2SB1495	TOSHIBA/东芝	2022+	TO-220F	2870	原厂代理终端免费提供样品	询价
深圳市利加科技有限公司	2SB1495	TOS	16+	TO-220	100000	全新原装现货	询价
贸泽芯城（深圳）电子科技有限公司	2SB1497-T	NEC	23+		4000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市安富世纪电子有限公司	2SB1495	TOSHIBA	23+	TO-220F	50000	全新原装正品现货,支持订货	询价

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2SB149规格书下载地址

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支持实单价格优势有单必成
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2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

DdatasheetPDF页码索引

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2SB149晶体管资料

2SB149产品属性

2SB149供应商更多...

2SB149芯片相关品牌

2SB149规格书下载地址

2SB149参数引脚图相关

2SB149数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SB776L-TO252R-P-TG_UTC代理商

2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引