封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS PNP 100V 3A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2257 • High DC current gain. • Low saturation voltage. • DARLINGTON APPLICATIONS • High power switching applications

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -2A) • Low-Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@IC= -1.5A • Complement to Type 2SD2257 APPLICATIONS • Designed for high power switching applications.

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, lc=-2A) • Low-Collector Saturation Voltage- : VCE(satr -1.5V(Max.)@lc= -1.5A • Complement to Type2SD2257 APPLICATIONS • Designed for high power switchingapplications.

Silicon PNP Power Transistors

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Silicon PNP Epitaxial Type

文件：137.62 Kbytes Page：4 Pages