2SB140晶体管资料
2SB140别名：2SB140三极管、2SB140晶体管、2SB140晶体三极管
2SB140生产厂家：日本索尼公司
2SB140制作材料：Ge-PNP
2SB140性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L
2SB140封装形式：直插封装
2SB140极限工作电压：40V
2SB140最大电流允许值：1.5A
2SB140最大工作频率：<1MHZ或未知
2SB140引脚数：2
2SB140最大耗散功率：12W
2SB140放大倍数：
2SB140图片代号：E-44
2SB140vtest：40
2SB140htest：999900
- 2SB140atest：1.5
2SB140wtest：12
2SB140代换 2SB140用什么型号代替：AD149,AD166,2N2138,2N2143,2SB449,3AD50A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP Epitaxial Silicon PNP Epitaxial Application Low frequency power amplifier | HITACHIHitachi Semiconductor 日立日立公司 |   | ||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications | SAVANTIC | | ||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications | ISC 无锡固电 | | ||
Low frequency power amplifier Application Low frequency power amplifier | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications | SAVANTIC | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS • Designed for low frequency power amplifier applications. | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V,lc= -1.5A) APPLICATIONS • Designed for low frequency power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications | SAVANTIC | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS • Designed for low frequency power amplifier applications. | ISC 无锡固电 | | ||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage-.. :V(BR)cEo=-120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, lc= -1.5A APPLICATIONS • Designed for low frequency power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
General Driver Applications??? General Driver Applications Features · Darlington connection. · High DC current gain. · Large current capacity, wide ASO. | SANYO 三洋 | | ||
Driver Applications??? PNP Epitaxial Planar Silicon Darlington Transistor Features • Darlington connection. • High DC current gain. • Large current capacity. Applications • Relay drivers, hammer drivers, lamp drivers, motor drivers. | SANYO 三洋 | | ||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Epitaxial Transistor Application\nLow frequency power amplifier complementary Pair with 2SD2121(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Epitaxial ■ Features ● Low frequency power amplifier ● Complementary to 2SD2121 | KEXIN 科信电子 | | ||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon NPN Triple Diffused Type Transistor Silicon NPN Triple Diffused Type Transistor | KEXIN 科信电子 | | ||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) | HITACHIHitachi Semiconductor 日立日立公司 | | ||
Silicon PNP Epitaxial 文件：149.41 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon PNP Power Transistors 文件：130.5 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：130.699 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：130.94 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon PNP Power Transistors 文件：130.5 Kbytes Page：3 Pages | SAVANTIC | | ||
PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications | ONSEMI 安森美半导体 | | ||
Silicon PNP Epitaxial 文件：146.95 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Transistor-Bipolar Power Transistors | RENESAS 瑞萨 | | ||
Silicon PNP Epitaxial 文件：146.95 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
Silicon PNP Epitaxial 文件：146.95 Kbytes Page：7 Pages | RENESAS 瑞萨 | | ||
PNP Transistors 文件：906.22 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：906.22 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：906.22 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：906.22 Kbytes Page：2 Pages | KEXIN 科信电子 | | ||
Silicon PNP Epitaxial 文件：152.81 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon PNP Epitaxial 文件：152.81 Kbytes Page：8 Pages | RENESAS 瑞萨 | | ||
Silicon PNP Epitaxial 文件：152.81 Kbytes Page：8 Pages | RENESAS 瑞萨 | |
2SB140产品属性
- 类型
描述
- NPN/PNP：
PNP
- hFE min.：
60
- hFE max.：
320
- Pc (W)：
18
- Production Status：
EOL
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
- |
11528 |
样件支持,可原厂排单订货! |
|||
onsemi(安森美) |
25+ |
- |
11580 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
SANYO |
23+ |
NA |
119 |
专做原装正品,假一罚百! |
|||
Hitachi |
25+23+ |
To-252 |
31267 |
绝对原装正品全新进口深圳现货 |
|||
ROHM |
24+ |
30000 |
|||||
HITACHI/日立 |
25+ |
TO251 |
9800 |
全新原装现货,假一赔十 |
|||
HITACHI |
04+ |
SOT-252 |
818 |
全新 发货1-2天 |
|||
HITACHI/日立 |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
HITACHI |
2023+ |
TO-252 |
50000 |
原装现货 |
|||
HITACHI |
最新 |
SOT-252 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
2SB140规格书下载地址
2SB140参数引脚图相关
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- 2SB1412(F5)
- 2SB1412
- 2SB1411
- 2SB141
- 2SB1409L,S
- 2SB1409
- 2SB1407L,S
- 2SB1407
- 2SB1406
- 2SB1405
- 2SB1404
- 2SB1403
- 2SB1402
- 2SB1401
- 2SB1400
- 2SB14
- 2SB1399
- 2SB1398
- 2SB1397
- 2SB1396
- 2SB1395
- 2SB1394
- 2SB1393A
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- 2SB1392
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- 2SB1390
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- 2SB1389
- 2SB1388
- 2SB1387
- 2SB1386
- 2SB1384
- 2SB1383
- 2SB1382
- 2SB1381
- 2SB1378
- 2SB1375
2SB140数据表相关新闻
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支持实单 价格优势 有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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