2SB140晶体管资料
2SB140别名:2SB140三极管、2SB140晶体管、2SB140晶体三极管
2SB140生产厂家:日本索尼公司
2SB140制作材料:Ge-PNP
2SB140性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SB140封装形式:直插封装
2SB140极限工作电压:40V
2SB140最大电流允许值:1.5A
2SB140最大工作频率:<1MHZ或未知
2SB140引脚数:2
2SB140最大耗散功率:12W
2SB140放大倍数:
2SB140图片代号:E-44
2SB140vtest:40
2SB140htest:999900
- 2SB140atest:1.5
2SB140wtest:12
2SB140代换 2SB140用什么型号代替:AD149,AD166,2N2138,2N2143,2SB449,3AD50A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP Epitaxial Silicon PNP Epitaxial Application Low frequency power amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications | SAVANTIC | |||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications | ISC 无锡固电 | |||
Low frequency power amplifier Application Low frequency power amplifier | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications | SAVANTIC | |||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS • Designed for low frequency power amplifier applications. | ISC 无锡固电 | |||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEo= -120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V,lc= -1.5A) APPLICATIONS • Designed for low frequency power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low collector saturation voltage • DARLINGTON APPLICATIONS • For use in low frequency power amplifier applications | SAVANTIC | |||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) APPLICATIONS • Designed for low frequency power amplifier applications. | ISC 无锡固电 | |||
Silicon PNP Darlington Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage-.. :V(BR)cEo=-120V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, lc= -1.5A APPLICATIONS • Designed for low frequency power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
General Driver Applications??? General Driver Applications Features · Darlington connection. · High DC current gain. · Large current capacity, wide ASO. | SANYO 三洋 | |||
Driver Applications??? PNP Epitaxial Planar Silicon Darlington Transistor Features • Darlington connection. • High DC current gain. • Large current capacity. Applications • Relay drivers, hammer drivers, lamp drivers, motor drivers. | SANYO 三洋 | |||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Epitaxial ■ Features ● Low frequency power amplifier ● Complementary to 2SD2121 | KEXIN 科信电子 | |||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon NPN Triple Diffused Type Transistor Silicon NPN Triple Diffused Type Transistor | KEXIN 科信电子 | |||
Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Epitaxial 文件:149.41 Kbytes Page:7 Pages | RENESAS 瑞萨 | |||
Silicon PNP Power Transistors 文件:130.5 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:130.699 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:130.94 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:130.5 Kbytes Page:3 Pages | SAVANTIC | |||
PNP Epitaxial Planar Silicon Darlington Transistor Driver Applications | ONSEMI 安森美半导体 | |||
Silicon PNP Epitaxial Transistor | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Epitaxial 文件:146.95 Kbytes Page:7 Pages | RENESAS 瑞萨 | |||
Transistor-Bipolar Power Transistors | RENESAS 瑞萨 | |||
Silicon PNP Epitaxial 文件:146.95 Kbytes Page:7 Pages | RENESAS 瑞萨 | |||
Silicon PNP Epitaxial 文件:146.95 Kbytes Page:7 Pages | RENESAS 瑞萨 | |||
PNP Transistors 文件:906.22 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:906.22 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:906.22 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
PNP Transistors 文件:906.22 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
Silicon PNP Epitaxial 文件:152.81 Kbytes Page:8 Pages | RENESAS 瑞萨 | |||
Silicon PNP Epitaxial 文件:152.81 Kbytes Page:8 Pages | RENESAS 瑞萨 | |||
Silicon PNP Epitaxial 文件:152.81 Kbytes Page:8 Pages | RENESAS 瑞萨 |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
HITACHI/日立 |
25+ |
TO251 |
9800 |
全新原装现货,假一赔十 |
|||
SANYO |
23+ |
NA |
119 |
专做原装正品,假一罚百! |
|||
Hitachi |
25+23+ |
To-252 |
31267 |
绝对原装正品全新进口深圳现货 |
|||
ROHM |
24+ |
30000 |
|||||
HITACHI |
25+ |
TO-251 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
HITACHI |
1922+ |
SOT-252 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
|||
RENESAS |
07+ |
TO-252 |
7000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HITACHI |
TO-251 |
22+ |
6000 |
十年配单,只做原装 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
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2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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