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位置：首页 > IC中文资料 > 2SB137

2SB137晶体管资料

  • 2SB137别名：2SB137三极管、2SB137晶体管、2SB137晶体三极管

  • 2SB137生产厂家：日本三菱公司

  • 2SB137制作材料：Ge-PNP

  • 2SB137性质：低频或音频放大 （LF）_开关管 （S）_功率放大 （L

  • 2SB137封装形式：直插封装

  • 2SB137极限工作电压：30V

  • 2SB137最大电流允许值：5A

  • 2SB137最大工作频率：<1MHZ或未知

  • 2SB137引脚数：2

  • 2SB137最大耗散功率：30W

  • 2SB137放大倍数：

  • 2SB137图片代号：E-44

  • 2SB137vtest：30

  • 2SB137htest：999900

  • 2SB137atest：5

  • 2SB137wtest：30

  • 2SB137代换 2SB137用什么型号代替：AD149,AD166,AD167,AL102,AL103,2N1539,2N1544,2SB231,3AD56A,

型号 功能描述 生产厂家 企业 LOGO 操作
2SB1370

丝印代码：C7；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

2SB1370

丝印代码：EF；Power Transistor(-60V, -3A)

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

ROHM

罗姆

2SB1370

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • PC=2W(Ta=25°C) /30W(TC=25°C) • Low collector saturation voltage • Wide area of safe operation

SAVANTIC

2SB1370

isc Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for power switching applications

ISC

无锡固电

2SB1370

TO-220F Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Breakdown Voltage High ● Reverse Cut-off Current Small ● Saturation Voltage Low ● Collector Power dissipation PCM : 2 W (Tamb=25.) 30 W (Tcase=25.)

JIANGSU

长电科技

2SB1370

Silicon PNP Power Transistor

DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for power switching applications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1370

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Low saturation voltage, excellent DC current gain characteristics. Applications Audio frequency power amplifier applications.

FOSHAN

蓝箭电子

2SB1371

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SD2064 • High transition frequency • Satisfactory linearity of hFE APPLICATIONS • For high power amplification

JMNIC

锦美电子

2SB1371

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SD2064 • High transition frequency • Satisfactory linearity of hFE APPLICATIONS • For high power amplification

ISC

无锡固电

2SB1371

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFa package • Complement to type 2SD2064 • High transition frequency • Satisfactory linearity of hFE APPLICATIONS • For high power amplification

SAVANTIC

2SB1371

Silicon PNP triple diffusion planar type(For high power amplification)

Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 ■ Features ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics ● Wide area of safe operation (ASO) ● High transition frequency fT ● Full-pack package which ca

PANASONIC

松下

2SB1371

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter BreakdownVoltage- :V(BR)CEo=-120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2064 APPLICATIONS • Designed for high power amplifications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1373

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2066 APPLICATIONS • Designed for high power amplifications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1373

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2066 APPLICATIONS • Designed for high power amplifications.

ISC

无锡固电

2SB1373

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SD2066 • Wide area of safe operation APPLICATIONS • For high power amplification

SAVANTIC

2SB1375

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2012 • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • Audio frequency power amplifier

JMNIC

锦美电子

2SB1375

TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER)

Audio Frequency Power Amplifier • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin • Complementary to 2SD2012

TOSHIBA

东芝

2SB1375

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2012 • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • Audio frequency power amplifier

SAVANTIC

2SB1375

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2012 • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • Audio frequency power amplifier

ISC

无锡固电

2SB1375

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • High Power Dissipation: PC=25W(TC=25℃ ) • Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) • Collector Metal(Fin)is Coverd with Mold Regin • Complementary to 2SD2012

JIANGSU

长电科技

2SB1375

Silicon PNP transistor in a TO-220F Plastic Package.

Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Low VCE(sat), High PC, complementary pair with 2SD2012. Applications Audio frequency power amplifier applications.

FOSHAN

蓝箭电子

2SB1375

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Collector Power Dissipation- : Pc= 25 W@ Tc= 25°C • Low Collector SaturationVoltage- : VCE(sat)- -1.5V(Max)@ (|c= -2A, IB= -0.2A) • Complement to Type 2SD2012 APPLICATIONS • Designed for audio frequency po

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1375

丝印代码：B1375；TO-220-3L Plastic-Encapsulate Transistors

FEATURES High Power Dissipation: PC=25W(TC=25℃) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector Metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012

DGNJDZ

南晶电子

2SB1378

Silicon PNP epitaxial planer type Transistor

For low-frequency power amplification\nComplementary to 2SD1996■ ● Low collector to emitter saturation voltage VCE(sat).\n● Optimum for low-voltage operation and for converters.\n● Allowing supply with the radial taping.;

PANASONIC

松下

2SB1378

Silicon PNP epitaxial planer type(For low-frequency power amplification)

For low-frequency power amplification Complementary to 2SD1996 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Optimum for low-voltage operation and for converters. ● Allowing supply with the radial taping.

PANASONIC

松下

2SB1370

isc Silicon PNP Power Transistor

文件：359.12 Kbytes Page：2 Pages

ISC

无锡固电

2SB1370

silicon PNP Power Transistors

文件：113.44 Kbytes Page：3 Pages

SAVANTIC

2SB1370_18

isc Silicon PNP Power Transistor

文件：359.12 Kbytes Page：2 Pages

ISC

无锡固电

2SB1371

Silicon PNP Power Transistors

文件：144.6 Kbytes Page：4 Pages

SAVANTIC

2SB1371_15

Silicon PNP Power Transistors

文件：192.45 Kbytes Page：4 Pages

JMNIC

锦美电子

2SB1371_2014

Silicon PNP Power Transistors

文件：192.45 Kbytes Page：4 Pages

JMNIC

锦美电子

2SB1372

Silicon PNP Power Transistor

文件：126.98 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB1372_16

isc Silicon PNP Power Transistor

文件：188.36 Kbytes Page：2 Pages

ISC

无锡固电

2SB1372_17

isc Silicon PNP Power Transistor

文件：264.32 Kbytes Page：2 Pages

ISC

无锡固电

2SB1373

Silicon PNP Power Transistors

文件：140.33 Kbytes Page：3 Pages

SAVANTIC

2SB1374

1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE

文件：88.13 Kbytes Page：2 Pages

ROHM

罗姆

2SB1374

丝印代码：T103；TRANSISTORS TO 92L TO-92LS MRT

文件：195.39 Kbytes Page：2 Pages

ROHM

罗姆

2SB1375

Silicon PNP Triple Diffused Type

文件：142.74 Kbytes Page：5 Pages

TOSHIBA

东芝

2SB1375

Silicon PNP Power Transistors

文件：249.61 Kbytes Page：4 Pages

SAVANTIC

2SB1375

60V,3A,Medium Power PNP Bipolar Transistor

GALAXY

银河微电

2SB1375

晶体管

JSCJ

长晶科技

2SB1375,CLARIONF(M

封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS PNP 60V 3A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ETC

知名厂家

2SB1375_06

Silicon PNP Triple Diffused Type

文件：142.74 Kbytes Page：5 Pages

TOSHIBA

东芝

2SB1375_15

Silicon PNP Power Transistors

文件：200.82 Kbytes Page：4 Pages

JMNIC

锦美电子

2SB1375_2014

Silicon PNP Power Transistors

文件：200.82 Kbytes Page：4 Pages

JMNIC

锦美电子

2SB137产品属性

  • 类型

    描述

  • Polarity：

    PNP

  • PCM(W)：

    2

  • IC(A)：

    -3

  • VCBO(V)：

    -60

  • VCEO(V)：

    -60

  • VEBO(V)：

    -5

  • hFEMin：

    100

  • hFEMax：

    320

  • hFE@VCE(V)：

    -5

  • hFE@IC(A)：

    -0.5

  • VCE(sat)(V)：

    -1.5

  • VCE(sat)@IC(A)：

    -2

  • VCE(sat)@IB(A)：

    -0.2

  • Package：

    TO-220F

2SB137供应商更多...

更新时间：2026-5-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科芯源微电子有限公司
2SB1382
SANKEN
2026+
TO-3P
54648
百分百原装现货 实单必成 欢迎询价
询价
中天科工半导体（深圳）有限公司
2SB1382
SANKEN
20+
TO-3P
32970
原装优势主营型号-可开原型号增税票
询价
深圳市联世界科技有限公司
2SB1381
TOSHIBA
24+/25+
716
原装正品现货库存价优
询价
深圳市明嘉莱科技有限公司
2SB1382
SANKEN
25+
TO-3PF
880000
明嘉莱只做原装正品现货
询价
深圳市一线半导体有限公司
2SB138
24+
TO-3
10000
询价
深圳市美思瑞电子科技有限公司
2SB1382
SK
22+
TO3P
12245
现货,原厂原装假一罚十!
询价
深圳市创新迹电子有限公司
2SB1382
SANKEN
22+
TO-3P
20000
公司只有原装 品质保证
询价
深圳市向鸿伟业电子有限公司
2SB1382
SK
2403+
TO-247
6489
原装现货热卖!十年芯路!坚持!
询价
上海金庆电子技术有限公司
2SB1382
SK
03+
TO-247
28
全新 发货1-2天
询价
深圳市东来宝电子科技有限公司
2SB1382
SK
24+
TO3P
39197
郑重承诺只做原装进口现货
询价

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