2SB137晶体管资料

  • 2SB137别名:2SB137三极管、2SB137晶体管、2SB137晶体三极管

  • 2SB137生产厂家:日本三菱公司

  • 2SB137制作材料:Ge-PNP

  • 2SB137性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • 2SB137封装形式:直插封装

  • 2SB137极限工作电压:30V

  • 2SB137最大电流允许值:5A

  • 2SB137最大工作频率:<1MHZ或未知

  • 2SB137引脚数:2

  • 2SB137最大耗散功率:30W

  • 2SB137放大倍数

  • 2SB137图片代号:E-44

  • 2SB137vtest:30

  • 2SB137htest:999900

  • 2SB137atest:5

  • 2SB137wtest:30

  • 2SB137代换 2SB137用什么型号代替:AD149,AD166,AD167,AL102,AL103,2N1539,2N1544,2SB231,3AD56A,

型号 功能描述 生产厂家&企业 LOGO 操作

TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm

罗姆罗姆半导体集团

ROHM

PowerTransistor(-60V,-3A)

EpitaxialPlanarNPNSiliconTransistor TAPEDPOWERTRANSISTORPACKAGEFORUSEWITHANAUTOMATICPLACEMENTMACHINE)

ROHMRohm

罗姆罗姆半导体集团

ROHM

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fapackage •PC=2W(Ta=25°C)/30W(TC=25°C) •Lowcollectorsaturationvoltage •Wideareaofsafeoperation

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconPNPPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=-0.3V(Typ.)@IC=-2A •GoodLinearityofhFE •WideAreaofSafeOperation APPLICATIONS •Designedforpowerswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TO-220FPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●BreakdownVoltageHigh ●ReverseCut-offCurrentSmall ●SaturationVoltageLow ●CollectorPowerdissipation PCM:2W(Tamb=25.) 30W(Tcase=25.)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

SiliconPNPPowerTransistor

DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=-0.3V(Typ.)@IC=-2A •GoodLinearityofhFE •WideAreaofSafeOperation APPLICATIONS •Designedforpowerswitchingapplications

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPtransistorinaTO-220FPlasticPackage.

Descriptions SiliconPNPtransistorinaTO-220FPlasticPackage. Features Lowsaturationvoltage,excellentDCcurrentgaincharacteristics. Applications Audiofrequencypoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD2064 •Hightransitionfrequency •SatisfactorylinearityofhFE APPLICATIONS •Forhighpoweramplification

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD2064 •Hightransitionfrequency •SatisfactorylinearityofhFE APPLICATIONS •Forhighpoweramplification

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFapackage •Complementtotype2SD2064 •Hightransitionfrequency •SatisfactorylinearityofhFE APPLICATIONS •Forhighpoweramplification

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPtriplediffusionplanartype(Forhighpoweramplification)

SiliconPNPtriplediffusionplanartype Forhighpoweramplification Complementaryto2SD2064 ■Features ●SatisfactoryfowardcurrenttransferratiohFEvs.collectorcurrentICcharacteristics ●Wideareaofsafeoperation(ASO) ●HightransitionfrequencyfT ●Full-packpackagewhichca

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEo=-120V(Min) •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SD2064 APPLICATIONS •Designedforhighpoweramplifications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-160V(Min) •WideAreaofSafeOperation •ComplementtoType2SD2066 APPLICATIONS •Designedforhighpoweramplifications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage-:V(BR)CEO=-160V(Min) •WideAreaofSafeOperation •ComplementtoType2SD2066 APPLICATIONS •Designedforhighpoweramplifications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Complementtotype2SD2066 •Wideareaofsafeoperation APPLICATIONS •Forhighpoweramplification

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2012 •Lowcollectorsaturationvoltage: VCE(SAT)=-1.5V(Max)atIC=-2A,IB=-0.2A •Collectorpowerdissipation: PC=25W(TC=25℃) APPLICATIONS •Audiofrequencypoweramplifier

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

TRANSISTOR(AUDIOFREQUENCYPOWERAMPLIFIER)

AudioFrequencyPowerAmplifier •Lowsaturationvoltage:VCE(sat)=−1.5V(max) (IC=−2A,IB=−0.2A) •Highpowerdissipation:PC=25W(Tc=25°C) •Collectormetal(fin)iscoveredwithmoldresin •Complementaryto2SD2012

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2012 •Lowcollectorsaturationvoltage: VCE(SAT)=-1.5V(Max)atIC=-2A,IB=-0.2A •Collectorpowerdissipation: PC=25W(TC=25℃) APPLICATIONS •Audiofrequencypoweramplifier

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-220Fpackage •Complementtotype2SD2012 •Lowcollectorsaturationvoltage: VCE(SAT)=-1.5V(Max)atIC=-2A,IB=-0.2A •Collectorpowerdissipation: PC=25W(TC=25℃) APPLICATIONS •Audiofrequencypoweramplifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

TO-220-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •HighPowerDissipation:PC=25W(TC=25℃) •Lowvoltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) •CollectorMetal(Fin)isCoverdwithMoldRegin •Complementaryto2SD2012

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

SiliconPNPtransistorinaTO-220FPlasticPackage.

Descriptions SiliconPNPtransistorinaTO-220FPlasticPackage. Features LowVCE(sat),HighPC,complementarypairwith2SD2012. Applications Audiofrequencypoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

SiliconPNPPowerTransistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=-60V(Min) •CollectorPowerDissipation- :Pc=25W@Tc=25°C •LowCollectorSaturationVoltage- :VCE(sat)--1.5V(Max)@(|c=-2A,IB=-0.2A) •ComplementtoType2SD2012 APPLICATIONS •Designedforaudiofrequencypo

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

TO-220-3LPlastic-EncapsulateTransistors

FEATURES HighPowerDissipation:PC=25W(TC=25℃) Lowvoltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) CollectorMetal(Fin)isCoverdwithMoldRegin Complementaryto2SD2012

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SiliconPNPepitaxialplanertype(Forlow-frequencypoweramplification)

Forlow-frequencypoweramplification Complementaryto2SD1996 ■Features ●LowcollectortoemittersaturationvoltageVCE(sat). ●Optimumforlow-voltageoperationandforconverters. ●Allowingsupplywiththeradialtaping.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic

iscSiliconPNPPowerTransistor

文件:359.12 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

siliconPNPPowerTransistors

文件:113.44 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

iscSiliconPNPPowerTransistor

文件:359.12 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

文件:144.6 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconPNPPowerTransistors

文件:192.45 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

文件:192.45 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistor

文件:126.98 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconPNPPowerTransistor

文件:188.36 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

iscSiliconPNPPowerTransistor

文件:264.32 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconPNPPowerTransistors

文件:140.33 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

1.2WPACKAGEPOWERTAPEDTRANSISTORDESIGNEDFORUSEWITHANAUTOMATICPLACEMENTMECHINE

文件:88.13 Kbytes Page:2 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

TRANSISTORSTO92LTO-92LSMRT

文件:195.39 Kbytes Page:2 Pages

ROHMRohm

罗姆罗姆半导体集团

ROHM

SiliconPNPTripleDiffusedType

文件:142.74 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconPNPPowerTransistors

文件:249.61 Kbytes Page:4 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS PNP 60V 3A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

SiliconPNPTripleDiffusedType

文件:142.74 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconPNPPowerTransistors

文件:200.82 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

SiliconPNPPowerTransistors

文件:200.82 Kbytes Page:4 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC

2SB137产品属性

  • 类型

    描述

  • 型号

    2SB137

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新时间:2025-6-18 13:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SK
24+
NA/
28
优势代理渠道,原装正品,可全系列订货开增值税票
SANKEN
24+
TO-3P
990000
明嘉莱只做原装正品现货
SANKEN
24+
TO-3PF
60000
全新原装现货
SK
2403+
TO-247
6489
原装现货热卖!十年芯路!坚持!
SANKEN
23+
TO-3P
50000
全新原装正品现货,支持订货
Sanken Electric
23+
TO-18
12800
原装正品代理商最优惠价格,现货或订货
SANKEN
13+
TO-3P
795
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SK
22+
TO3P
12245
现货,原厂原装假一罚十!
SANKEN
20+
TO-3P
32970
原装优势主营型号-可开原型号增税票
23+
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详

2SB137芯片相关品牌

  • DATADELAY
  • Fujitsu
  • Hittite
  • JHE
  • Lattice
  • Microsemi
  • MOLEX10
  • NUMONYX
  • SHARMA
  • TI1
  • Vitec
  • ZSELEC

2SB137数据表相关新闻

  • 2SB562L-TO92NLK-B-TG_UTC代理商

    2SB562L-TO92NLK-B-TG_UTC代理商

    2023-3-14
  • 2SA928AL-TO92NLB-Y-TG

    2SA928AL-TO92NLB-Y-TG

    2023-2-1
  • 2SA812-T1B-A/S6 原装正品现货

    支持实单价格优势有单必成

    2022-3-30
  • 2SB649 MOS

    www.jskj-ic.com

    2021-9-10
  • 2SA2198

    2SA2198,全新原装当天发货或门市自取0755-82732291.

    2020-4-24
  • 2SB1386-P-PNP硅外延晶体管

    2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号

    2012-11-9