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2SB137晶体管资料
2SB137别名:2SB137三极管、2SB137晶体管、2SB137晶体三极管
2SB137生产厂家:日本三菱公司
2SB137制作材料:Ge-PNP
2SB137性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
2SB137封装形式:直插封装
2SB137极限工作电压:30V
2SB137最大电流允许值:5A
2SB137最大工作频率:<1MHZ或未知
2SB137引脚数:2
2SB137最大耗散功率:30W
2SB137放大倍数:
2SB137图片代号:E-44
2SB137vtest:30
2SB137htest:999900
- 2SB137atest:5
2SB137wtest:30
2SB137代换 2SB137用什么型号代替:AD149,AD166,AD167,AL102,AL103,2N1539,2N1544,2SB231,3AD56A,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | |||
Power Transistor(-60V, -3A) Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE) | ROHM 罗姆 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • PC=2W(Ta=25°C) /30W(TC=25°C) • Low collector saturation voltage • Wide area of safe operation | SAVANTIC | |||
isc Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for power switching applications | ISC 无锡固电 | |||
TO-220F Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Breakdown Voltage High ● Reverse Cut-off Current Small ● Saturation Voltage Low ● Collector Power dissipation PCM : 2 W (Tamb=25.) 30 W (Tcase=25.) | JIANGSU 长电科技 | |||
Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -0.3V(Typ.)@IC= -2A • Good Linearity of hFE • Wide Area of Safe Operation APPLICATIONS • Designed for power switching applications | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP transistor in a TO-220F Plastic Package. Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Low saturation voltage, excellent DC current gain characteristics. Applications Audio frequency power amplifier applications. | FOSHAN 蓝箭电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD2064 • High transition frequency • Satisfactory linearity of hFE APPLICATIONS • For high power amplification | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD2064 • High transition frequency • Satisfactory linearity of hFE APPLICATIONS • For high power amplification | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PFa package • Complement to type 2SD2064 • High transition frequency • Satisfactory linearity of hFE APPLICATIONS • For high power amplification | SAVANTIC | |||
Silicon PNP triple diffusion planar type(For high power amplification) Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2064 ■ Features ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics ● Wide area of safe operation (ASO) ● High transition frequency fT ● Full-pack package which ca | Panasonic 松下 | |||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter BreakdownVoltage- :V(BR)CEo=-120V(Min) • Good Linearity of hFE • Wide Area of Safe Operation • Complement to Type 2SD2064 APPLICATIONS • Designed for high power amplifications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2066 APPLICATIONS • Designed for high power amplifications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) • Wide Area of Safe Operation • Complement to Type 2SD2066 APPLICATIONS • Designed for high power amplifications. | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-3PN package • Complement to type 2SD2066 • Wide area of safe operation APPLICATIONS • For high power amplification | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2012 • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • Audio frequency power amplifier | JMNIC 锦美电子 | |||
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER) Audio Frequency Power Amplifier • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin • Complementary to 2SD2012 | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2012 • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • Audio frequency power amplifier | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2012 • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • Audio frequency power amplifier | ISC 无锡固电 | |||
TO-220-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • High Power Dissipation: PC=25W(TC=25℃ ) • Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) • Collector Metal(Fin)is Coverd with Mold Regin • Complementary to 2SD2012 | JIANGSU 长电科技 | |||
Silicon PNP transistor in a TO-220F Plastic Package. Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Low VCE(sat), High PC, complementary pair with 2SD2012. Applications Audio frequency power amplifier applications. | FOSHAN 蓝箭电子 | |||
Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Collector Power Dissipation- : Pc= 25 W@ Tc= 25°C • Low Collector SaturationVoltage- : VCE(sat)- -1.5V(Max)@ (|c= -2A, IB= -0.2A) • Complement to Type 2SD2012 APPLICATIONS • Designed for audio frequency po | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
TO-220-3L Plastic-Encapsulate Transistors FEATURES High Power Dissipation: PC=25W(TC=25℃) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector Metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012 | DGNJDZ 南晶电子 | |||
Silicon PNP epitaxial planer type(For low-frequency power amplification) For low-frequency power amplification Complementary to 2SD1996 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Optimum for low-voltage operation and for converters. ● Allowing supply with the radial taping. | Panasonic 松下 | |||
isc Silicon PNP Power Transistor 文件:359.12 Kbytes Page:2 Pages | ISC 无锡固电 | |||
silicon PNP Power Transistors 文件:113.44 Kbytes Page:3 Pages | SAVANTIC | |||
isc Silicon PNP Power Transistor 文件:359.12 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistors 文件:144.6 Kbytes Page:4 Pages | SAVANTIC | |||
Silicon PNP Power Transistors 文件:192.45 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:192.45 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistor 文件:126.98 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc Silicon PNP Power Transistor 文件:188.36 Kbytes Page:2 Pages | ISC 无锡固电 | |||
isc Silicon PNP Power Transistor 文件:264.32 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistors 文件:140.33 Kbytes Page:3 Pages | SAVANTIC | |||
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE 文件:88.13 Kbytes Page:2 Pages | ROHM 罗姆 | |||
TRANSISTORS TO 92L TO-92LS MRT 文件:195.39 Kbytes Page:2 Pages | ROHM 罗姆 | |||
Silicon PNP Triple Diffused Type 文件:142.74 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors 文件:249.61 Kbytes Page:4 Pages | SAVANTIC | |||
60V,3A,Medium Power PNP Bipolar Transistor | GALAXY 银河微电 | |||
晶体管 | JSCJ 长晶科技 | |||
封装/外壳:TO-220-3 整包 包装:散装 描述:TRANS PNP 60V 3A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
Silicon PNP Triple Diffused Type 文件:142.74 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors 文件:200.82 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:200.82 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Silicon PNP epitaxial planer type Transistor | Panasonic 松下 |
2SB137产品属性
- 类型
描述
- 型号
2SB137
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SK |
24+ |
NA/ |
28 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SANKEN |
25+ |
TO-3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
SANKEN |
20+ |
TO-3P |
32970 |
原装优势主营型号-可开原型号增税票 |
|||
SANKEN |
24+ |
TO-3P |
990000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA |
24+/25+ |
716 |
原装正品现货库存价优 |
||||
TOSHIBA/东芝 |
22+ |
TO-220 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
24+ |
TO-3 |
10000 |
|||||
SK |
22+ |
TO3P |
12245 |
现货,原厂原装假一罚十! |
|||
SK |
2403+ |
TO-247 |
6489 |
原装现货热卖!十年芯路!坚持! |
|||
SK |
24+ |
TO3P |
39197 |
郑重承诺只做原装进口现货 |
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2012-11-9
DdatasheetPDF页码索引
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