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2SB1375晶体管资料
2SB1375别名：2SB1375三极管、2SB1375晶体管、2SB1375晶体三极管
2SB1375生产厂家：日本东芝公司
2SB1375制作材料：Si-PNP
2SB1375性质：低频或音频放大 （LF）_功率放大 （L）
2SB1375封装形式：直插封装
2SB1375极限工作电压：60V
2SB1375最大电流允许值：3A
2SB1375最大工作频率：9MHZ
2SB1375引脚数：3
2SB1375最大耗散功率：25W
2SB1375放大倍数：β=100-320
2SB1375图片代号：B-10
2SB1375vtest：60
2SB1375htest：9000000
- 2SB1375atest：3
2SB1375wtest：25
2SB1375代换 2SB1375用什么型号代替：BD936F,2SB1015,2SB1094,2SB1133,2SB1187,2SB1274,2SB1392,
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1375 | Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2012 • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • Audio frequency power amplifier | JMNIC 锦美电子 |   | |
2SB1375 | Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2012 • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • Audio frequency power amplifier | SAVANTIC | | |
2SB1375 | TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER) Audio Frequency Power Amplifier • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) • High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin • Complementary to 2SD2012 | TOSHIBA 东芝 | | |
2SB1375 | Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • Complement to type 2SD2012 • Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A • Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS • Audio frequency power amplifier | ISC 无锡固电 | | |
2SB1375 | TO-220-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • High Power Dissipation: PC=25W(TC=25℃ ) • Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) • Collector Metal(Fin)is Coverd with Mold Regin • Complementary to 2SD2012 | JIANGSU 长电科技 | | |
2SB1375 | Silicon PNP transistor in a TO-220F Plastic Package. Descriptions Silicon PNP transistor in a TO-220F Plastic Package. Features Low VCE(sat), High PC, complementary pair with 2SD2012. Applications Audio frequency power amplifier applications. | FOSHAN 蓝箭电子 | | |
2SB1375 | Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Collector Power Dissipation- : Pc= 25 W@ Tc= 25°C • Low Collector SaturationVoltage- : VCE(sat)- -1.5V(Max)@ (|c= -2A, IB= -0.2A) • Complement to Type 2SD2012 APPLICATIONS • Designed for audio frequency po | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
2SB1375 | TO-220-3L Plastic-Encapsulate Transistors FEATURES High Power Dissipation: PC=25W(TC=25℃) Low voltage:VCE(sat)=-1.5V(Max)(IC=-2A,IB=-0.2A) Collector Metal(Fin)is Coverd with Mold Regin Complementary to 2SD2012 | DGNJDZ 南晶电子 | | |
2SB1375 | Silicon PNP Triple Diffused Type 文件：142.74 Kbytes Page：5 Pages | TOSHIBA 东芝 | | |
2SB1375 | Silicon PNP Power Transistors 文件：249.61 Kbytes Page：4 Pages | SAVANTIC | | |
封装/外壳：TO-220-3 整包 包装：散装 描述：TRANS PNP 60V 3A TO220NIS 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Silicon PNP Triple Diffused Type 文件：142.74 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
Silicon PNP Power Transistors 文件：200.82 Kbytes Page：4 Pages | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors 文件：200.82 Kbytes Page：4 Pages | JMNIC 锦美电子 | |
2SB1375产品属性
- 类型
描述
- 型号
2SB1375
- 制造商
Panasonic Industrial Company
- 功能描述
TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
10000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TOSHIBA/东芝 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
SANYO/三洋 |
25+ |
TO-220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
TOSHIBA/东芝 |
25+ |
TO-220F220 |
45000 |
TOSHIBA/东芝全新现货2SB1375即刻询购立享优惠#长期有排单订 |
|||
TOSHIBA |
24+/25+ |
50 |
原装正品现货库存价优 |
||||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
TOSHIBA(东芝) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
CJ/长电 |
24+ |
TO-220-3L |
50000 |
只做原装，欢迎询价，量大价优 |
|||
TOSHIBA/东芝 |
1926+ |
TO-220F |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
PANASONIC/松下 |
22+ |
TO-220F |
25000 |
只做原装进口现货,专注配单 |
2SB1375规格书下载地址
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2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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