位置：首页 > IC中文资料第7246页 > 2SB1216T
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
High-CurrentSwitchingApplications ■Features ●Lowcollector-to-emittersaturationvoltage. ●HighcurrentandhighfT ●Fastswitchingtime. ●Complementaryto2SD1816 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  |   | |
High-CurrentSwitchingApplications High-CurrentSwitchingApplications Features •Lowcollector-to-emittersaturationvoltage. •GoodlinearityofhFE. •Smallandslimpackagefacilitatingcompactnessofsets. •HighfT. •Fastswitchingtime. Applications •Suitableforrelaydrivers,high-speedinverters, convert | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |  | | |
BipolarTransistor Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
HIGHCURRENTSWITCHIGAPPLICATIONS ■FEATURES *Lowcollector-to-emittersaturationvoltage *GoodlinearityofhFE *Smallandslimpackagefacilitatingcompactnessofsets. *HighfT *Fastswitchingspeed *Complementthe2SD1816 | UTCUnisonic Technologies 友顺友顺科技股份有限公司 |  | | |
High-CurrentSwitchingApplications 文件：154.87 Kbytes Page：5 Pages | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
BipolarTransistor Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor Features •LowCollectortoEmitterSaturationVoltage •SmallandSlimPackageFacilitatingCompactnessofSets •HighfT •GoodLinearityofhFE •FastSwitchingTime TypicalApplications •SuitableforRelayDrivers •HighSpeedInverters •Converters •OtherGeneralHighCurrentSwit | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor(-)100V,(-)4A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA 文件：366.77 Kbytes Page：9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor(-)100V,(-)4A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA 文件：366.77 Kbytes Page：9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 4A TP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 4A TP-FA 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor(-)100V,(-)4A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA 文件：366.77 Kbytes Page：9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
BipolarTransistor(-)100V,(-)4A,LowVCE(sat),(PNP)NPNSingleTP/TP-FA 文件：366.77 Kbytes Page：9 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
2SB1216T产品属性
- 类型
描述
- 型号
2SB1216T
- 功能描述
两极晶体管 - BJT BIP PNP 4A 100V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TP-FA |
1400 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
SANYO/三洋 |
24+ |
NA/ |
13750 |
原装现货,当天可交货,原型号开票 |
|||
SANYO/三洋 |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
SANYO/三洋 |
25+ |
SOT252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ON-SEMI |
22+ |
N/A |
44800 |
原装正品 香港现货 |
|||
SANYO/三洋 |
24+ |
SOT252 |
990000 |
明嘉莱只做原装正品现货 |
|||
SANYO/三洋 |
24+ |
TO-252 |
505348 |
免费送样原盒原包现货一手渠道联系 |
|||
SANYO/三洋 |
24+ |
TO252 |
8950 |
BOM配单专家,发货快,价格低 |
|||
ROHM |
24+ |
60000 |
|||||
国产 |
24+ |
TO-252 |
210 |
原装现货假一赔十 |
2SB1216T芯片相关品牌
2SB1216T规格书下载地址
2SB1216T参数引脚图相关
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- 485接口
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- 3g汽车
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- 2sc4226
- 2SB1238
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- 2SB1218GSL
- 2SB1218GRL
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- 2SB1218G0L
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- 2SB1218AQL
- 2SB1218A0L
- 2SB1218A
- 2SB1218
- 2SB1217-AZ-L
- 2SB1217-AZ-K
- 2SB1217-AZ
- 2SB1217
- 2SB1216T-TL-H
- 2SB1216T-TL-E
- 2SB1216T-H
- 2SB1216T-E
- 2SB1216S-TL-H
- 2SB1216S-TL-E
- 2SB1216S-H
- 2SB1216S-E
- 2SB1216
- 2SB1215T-TL-H
- 2SB1215T-TL-E
- 2SB1215T-H
- 2SB1215T-E
- 2SB1215S-TL-H
- 2SB1215S-TL-E
- 2SB1215S-H
- 2SB1215S-E
- 2SB1215
- 2SB1214
- 2SB1212
- 2SB1209
- 2SB1207
- 2SB1206
- 2SB1205T-TL-E
- 2SB1205T-E
- 2SB1205S-TL-E
- 2SB1205S-E
- 2SB1205
- 2SB1204T-TL-E
- 2SB1204T-E
- 2SB1204
- 2SB1203
- 2SB1202
- 2SB1201
- 2SB1199
- 2SB1198
- 2SB1197
- 2SB1194
- 2SB1193
- 2SB1192
- 2SB1190
- 2SB1189
2SB1216T数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SA2198
2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下：·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息）·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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