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2SB121晶体管资料

2SB121别名：2SB121三极管、2SB121晶体管、2SB121晶体三极管
2SB121生产厂家：日本富士通公司
2SB121制作材料：Ge-PNP
2SB121性质：低频或音频放大（LF）_开关管（S）
2SB121封装形式：直插封装
2SB121极限工作电压：105V
2SB121最大电流允许值：0.1A
2SB121最大工作频率：<1MHZ或未知
2SB121引脚数：3
2SB121最大耗散功率：0.05W
2SB121放大倍数：
2SB121图片代号：C-47
2SB121vtest：105
2SB121htest：999900
2SB121atest：0.1
2SB121wtest：0.05

2SB121代换 2SB121用什么型号代替：ACY39,2N4042,2N4043,3AX54D,

2SB121价格

参考价格：￥2.1829

型号：2SB1215S-E 品牌：ON 备注：这里有2SB121多少钱，2025年最近7天走势，今日出价，今日竞价，2SB121批发/采购报价，2SB121行情走势销售排行榜，2SB121报价。

型号	功能描述	生产厂家企业	LOGO
2SB1214	Driver Applications Driver Applications Features • High DC current gain. • Darlington connection. • Small and slim package permitting the 2SB1214-applied sets to be made more compact. Applications • Motor drivers, hammer drivers, relay drivers.	SANYO 三洋	SANYO
2SB1215	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215	Strobe High-Current Switching Applications ■ Features ● Low collector-to-emitter saturation voltage. ● High current and high fT ● Fast switching time. ● Complementary to 2SD1815	KEXIN 科信电子	KEXIN
2SB1215	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215	isc Silicon PNP Power Transistor DESCRIPTION • Excellent linearity of hFE • Small and slim package making it easy to make 2SB1215/2SD1815-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope	ISC 无锡固电	ISC
2SB1215	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1215	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1215-251	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1215-252	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1215-D	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215S-E	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215S-E	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215S-H	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215S-H	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215S-TL-E	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215S-TL-E	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215S-TL-H	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215S-TL-H	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215T-E	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215T-E	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215T-H	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215T-H	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215T-TL-E	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215T-TL-E	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215T-TL-H	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215T-TL-H	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1216	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216	isc Silicon PNP Power Transistor DESCRIPTION • Excellent linearity of hFE • Small and slim package facilitating compactness of sets • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION	ISC 无锡固电	ISC
2SB1216	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1216	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1216	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216	HIGH CURRENT SWITCHIG APPLICATIONS ■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816	UTC 友顺	UTC
2SB1216	High-Current Switching Applications High-Current Switching Applications Features • Low collector-to-emitter saturation voltage. • Good linearity of hFE. • Small and slim package facilitating compactness of sets. • High fT. • Fast switching time. Applications • Suitable for relay drivers, high-speed inverters, convert	SANYO 三洋	SANYO
2SB1216	High-Current Switching Applications ■ Features ● Low collector-to-emitter saturation voltage. ● High current and high fT ● Fast switching time. ● Complementary to 2SD1816	KEXIN 科信电子	KEXIN
2SB1216-251	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1216-252	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1216G-X-TF3-T	HIGH CURRENT SWITCHIG APPLICATIONS ■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816	UTC 友顺	UTC
2SB1216L-X-TF3-T	HIGH CURRENT SWITCHIG APPLICATIONS ■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816	UTC 友顺	UTC
2SB1216S-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1217	Silicon PNP transistor in a TO-126F Plastic Package. Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features Low VCE(sat),large current, high PC, complementary to 2SD1818. Applications It is suitable for DC-DC converter, or driver of solenoid or motor.	FOSHAN 蓝箭电子	FOSHAN
2SB1217	Silicon PNP Power Transistor DESCRIPTION • High Collector Current -IC= -3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2SD1818 APPLICATIONS • Designed for use in DC-DC converter, driver, solenid and motor.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1217	PNP SILICON POWER TRANSISTOR DESCRIPTION The 2SB1217 is a Low VCE(sat) transistor which has a large current capability and wide SOA. It is suitable for DC-DC converter, or driver of solenoid or motor.	NEC 瑞萨	NEC
2SB1217	isc Silicon PNP Power Transistor DESCRIPTION • High Collector Current -IC= -3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2SD1818 APPLICATIONS • Designed for use in DC-DC converter, driver, solenid and motor.	ISC 无锡固电	ISC
2SB1218	Silicon PNP Epitaxial Planar Type Features • High forward current transfer ratio hFE.	KEXIN 科信电子	KEXIN

2SB121产品属性

类型
描述
型号
2SB121
功能描述
两极晶体管 - BJT BIP PNP 3A 100V
RoHS
否
制造商
STMicroelectronics
晶体管极性
PNP 集电极—基极电压
VCBO
集电极—发射极最大电压
VCEO
- 40 V 发射极 - 基极电压
VEBO
- 6 V
增益带宽产品fT
直流集电极/Base Gain hfe
Min
100 A
安装风格
SMD/SMT
封装/箱体
PowerFLAT 2 x 2

2SB121供应商更多...

更新时间：2025-12-25 8:36:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市英科美电子有限公司	2SB1218A-R	PANASONIC/松下	2223+	SOT323	26800	只做原装正品假一赔十为客户做到零风险	询价
瀚佳科技(深圳)有限公司	2SB1218AS	PANASONIC	24+	SOT-323	9700	绝对原装正品现货假一罚十	询价
深圳市凌旭科技有限公司	2SB1218AQ	PANASOINC	2016+	SOT-323	18000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市恒创达实业有限公司	2SB1218A-R	PANASONIC	17+	SOT323	6200	100%原装正品现货	询价
深圳市粤骏腾电子科技有限公司	2SB1218A	TOSHIBA/东芝	24+	SOT-23	383	大批量供应优势库存热卖	询价
深圳诚思涵科技有限公司	2SB1218A-R	原装PANASONIC	19+	SOT-323	20000		询价
深圳市卓越微芯电子有限公司	2SB1218A-(TX)	Panason	25+	SOT-323	3000	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市东来宝电子科技有限公司	2SB1218A-(TX)	PANASONIC/松下	24+	SOT-323	28235	郑重承诺只做原装进口现货	询价
深圳市宝芯创电子有限公司	2SB1218ARL	PANASONIC/松下	18+	SOT-323	22272	全新原装现货,可出样品,可开增值税发票	询价
深圳市益百分电子有限公司	2SB1218A-R(TX)	PANASONIC	07PB	SOT23/SOT323	1200	全新原装进口自己库存优势	询价

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