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2SB121晶体管资料

2SB121别名：2SB121三极管、2SB121晶体管、2SB121晶体三极管
2SB121生产厂家：日本富士通公司
2SB121制作材料：Ge-PNP
2SB121性质：低频或音频放大（LF）_开关管（S）
2SB121封装形式：直插封装
2SB121极限工作电压：105V
2SB121最大电流允许值：0.1A
2SB121最大工作频率：<1MHZ或未知
2SB121引脚数：3
2SB121最大耗散功率：0.05W
2SB121放大倍数：
2SB121图片代号：C-47
2SB121vtest：105
2SB121htest：999900
2SB121atest：0.1
2SB121wtest：0.05

2SB121代换 2SB121用什么型号代替：ACY39,2N4042,2N4043,3AX54D,

2SB121价格

参考价格：￥2.1829

型号：2SB1215S-E 品牌：ON 备注：这里有2SB121多少钱，2026年最近7天走势，今日出价，今日竞价，2SB121批发/采购报价，2SB121行情走势销售排行榜，2SB121报价。

型号	功能描述	生产厂家企业	LOGO
2SB1214	Driver Applications Driver Applications Features • High DC current gain. • Darlington connection. • Small and slim package permitting the 2SB1214-applied sets to be made more compact. Applications • Motor drivers, hammer drivers, relay drivers.	SANYO 三洋	SANYO
2SB1215	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215	Strobe High-Current Switching Applications ■ Features ● Low collector-to-emitter saturation voltage. ● High current and high fT ● Fast switching time. ● Complementary to 2SD1815	KEXIN 科信电子	KEXIN
2SB1215	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215	isc Silicon PNP Power Transistor DESCRIPTION • Excellent linearity of hFE • Small and slim package making it easy to make 2SB1215/2SD1815-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope	ISC 无锡固电	ISC
2SB1215	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1215	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1215	Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA The 2SB1215 is a Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA, for high-current switching applications. 2SD1815 is a complementary NPN bipolar transistor. • Low collector-to-emitter saturation voltage\n• Excllent linearity of hFE\n• Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim\n• Fast switching time\n• High fT;	ONSEMI 安森美半导体	ONSEMI
2SB1215-251	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1215-252	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1215-D	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215S-E	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215S-E	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215S-H	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215S-H	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215S-TL-E	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215S-TL-E	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215S-TL-H	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215S-TL-H	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215T-E	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215T-E	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215T-H	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215T-H	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215T-TL-E	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215T-TL-E	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1215T-TL-H	High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c	SANYO 三洋	SANYO
2SB1215T-TL-H	Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter	ONSEMI 安森美半导体	ONSEMI
2SB1216	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216	isc Silicon PNP Power Transistor DESCRIPTION • Excellent linearity of hFE • Small and slim package facilitating compactness of sets • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION	ISC 无锡固电	ISC
2SB1216	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1216	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1216	双极晶体管，-100V，-4A，低 VCE (sat)，PNP 单 2SB1216 is a Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single TP/TP-FA for high-Current Switching Application. • Low collector-to-emitter saturation voltage\n• Good linearity of hFE\n• Small and slim package facilitating compactness of sets\n• High fT\n• Fast switching time;	ONSEMI 安森美半导体	ONSEMI
2SB1216	High-Current Switching Applications High-Current Switching Applications Features • Low collector-to-emitter saturation voltage. • Good linearity of hFE. • Small and slim package facilitating compactness of sets. • High fT. • Fast switching time. Applications • Suitable for relay drivers, high-speed inverters, convert	SANYO 三洋	SANYO
2SB1216	High-Current Switching Applications ■ Features ● Low collector-to-emitter saturation voltage. ● High current and high fT ● Fast switching time. ● Complementary to 2SD1816	KEXIN 科信电子	KEXIN
2SB1216	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216	HIGH CURRENT SWITCHIG APPLICATIONS ■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816	UTC 友顺	UTC
2SB1216-251	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1216-252	Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Small and slim package facilitating compactness of sets ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications	ISC 无锡固电	ISC
2SB1216G-X-TF3-T	HIGH CURRENT SWITCHIG APPLICATIONS ■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816	UTC 友顺	UTC
2SB1216L-X-TF3-T	HIGH CURRENT SWITCHIG APPLICATIONS ■ FEATURES * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed * Complement the 2SD1816	UTC 友顺	UTC
2SB1216S-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216S-TL-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-E	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1216T-TL-H	Bipolar Transistor Features • Low Collector to Emitter Saturation Voltage • Small and Slim Package Facilitating Compactness of Sets • High fT • Good Linearity of hFE • Fast Switching Time Typical Applications • Suitable for Relay Drivers • High Speed Inverters • Converters • Other General High Current Swit	ONSEMI 安森美半导体	ONSEMI
2SB1217	isc Silicon PNP Power Transistor DESCRIPTION • High Collector Current -IC= -3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) • Good Linearity of hFE • Low Saturation Voltage • Complement to Type 2SD1818 APPLICATIONS • Designed for use in DC-DC converter, driver, solenid and motor.	ISC 无锡固电	ISC
2SB1217	PNP SILICON POWER TRANSISTOR DESCRIPTION The 2SB1217 is a Low VCE(sat) transistor which has a large current capability and wide SOA. It is suitable for DC-DC converter, or driver of solenoid or motor.	NEC 瑞萨	NEC
2SB1217	Silicon PNP transistor in a TO-126F Plastic Package. Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features Low VCE(sat),large current, high PC, complementary to 2SD1818. Applications It is suitable for DC-DC converter, or driver of solenoid or motor.	FOSHAN 蓝箭电子	FOSHAN

2SB121产品属性

类型
描述
Pb-free：
Pb
Status：
Active
Polarity：
PNP
Type：
Low VCE(sat)
VCE(sat) Max (V)：
0.5
IC Cont. (A)：
3
VCEO Min (V)：
100
VCBO (V)：
120
VEBO (V)：
6
VBE(sat) (V)：
0.9
hFE Min：
140
hFE Max：
280
PTM Max (W)：
1
Package Type：
DPAK-3/TO-252-3

2SB121供应商更多...

更新时间：2026-5-15 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	2SB1218A	Panasonic(松下)	24+	SMD	42131	免费送样,账期支持,原厂直供,没有中间商赚差价	询价
深圳市凌旭科技有限公司	2SB1218AQ	PANASOINC	2016+	SOT-323	18000	只做原装,假一罚十,公司可开17%增值税发票!	询价
上海意淼电子科技有限公司	2SB1218A-R	PANASONIC	23+	SOT23	20000	全新原装假一赔十	询价
深圳市纳艾斯科技有限公司	2SB1218A-R(TX)	PANASON	24+	SOT323	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
中天科工半导体（深圳）有限公司	2SB1218A-Q	PANASONIC/松下	25+	原装	32000	PANASONIC/松下全新特价2SB1218A-Q即刻询购立享优惠#长期有货	询价
深圳市豪迈兴电子有限公司	2SB1218A	PANASON	24+	SMD	4231	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市振宏微科技有限公司	2SB1218AQTW	PANASONIC	23+	NA	2486	专做原装正品,假一罚百!	询价
深圳市富芯乐电子科技有限公司	2SB1218A	PAN	24+	SOT-323	4000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市赛美科科技有限公司	2SB1218ARL	Panasonic		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市英科美电子有限公司	2SB1218A-R	PANASONIC/松下	2223+	SOT323	26800	只做原装正品假一赔十为客户做到零风险	询价

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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

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P1
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2SB1386-P-PNP硅外延晶体管

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