2SB1215晶体管资料
2SB1215别名：2SB1215三极管、2SB1215晶体管、2SB1215晶体三极管
2SB1215生产厂家：日本三洋公司
2SB1215制作材料：Si-PNP
2SB1215性质：开关管 （S）_功率放大 （L）
2SB1215封装形式：直插封装
2SB1215极限工作电压：120V
2SB1215最大电流允许值：3A
2SB1215最大工作频率：130MHZ
2SB1215引脚数：3
2SB1215最大耗散功率：20W
2SB1215放大倍数：
2SB1215图片代号：A-80
2SB1215vtest：120
2SB1215htest：130000000
- 2SB1215atest：3
2SB1215wtest：20
2SB1215代换 2SB1215用什么型号代替：2SA1647,2SB928,
2SB1215价格
参考价格：￥2.1829
型号：2SB1215S-E 品牌：ON 备注：这里有2SB1215多少钱，2026年最近7天走势，今日出价，今日竞价，2SB1215批发/采购报价，2SB1215行情走势销售排行榜，2SB1215报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1215 | Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter | ONSEMI 安森美半导体 |   | |
2SB1215 | High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c | SANYO 三洋 | | |
2SB1215 | High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c | SANYO 三洋 | | |
2SB1215 | isc Silicon PNP Power Transistor DESCRIPTION • Excellent linearity of hFE • Small and slim package making it easy to make 2SB1215/2SD1815-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable ope | ISC 无锡固电 | | |
2SB1215 | Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications | ISC 无锡固电 | | |
2SB1215 | Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications | ISC 无锡固电 | | |
2SB1215 | Strobe High-Current Switching Applications ■ Features ● Low collector-to-emitter saturation voltage. ● High current and high fT ● Fast switching time. ● Complementary to 2SD1815 | KEXIN 科信电子 | | |
2SB1215 | Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA The 2SB1215 is a Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA, for high-current switching applications. 2SD1815 is a complementary NPN bipolar transistor. • Low collector-to-emitter saturation voltage\n• Excllent linearity of hFE\n• Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim\n• Fast switching time\n• High fT; | ONSEMI 安森美半导体 | | |
Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications | ISC 无锡固电 | | ||
High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c | SANYO 三洋 | | ||
High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c | SANYO 三洋 | | ||
Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter | ONSEMI 安森美半导体 | | ||
High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c | SANYO 三洋 | | ||
High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c | SANYO 三洋 | | ||
Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter | ONSEMI 安森美半导体 | | ||
High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c | SANYO 三洋 | | ||
High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c | SANYO 三洋 | | ||
Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter | ONSEMI 安森美半导体 | | ||
High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c | SANYO 三洋 | | ||
High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c | SANYO 三洋 | | ||
Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter | ONSEMI 安森美半导体 | | ||
Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Features • Low collector to emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time • Halogen free compliance Applications • Relay drivers, high-speed inverters, converter | ONSEMI 安森美半导体 | | ||
High-Current Switching Applications Features • Low collector-to-emitter saturation voltage • Excllent linearity of hFE • Small-sized package permitting 2SB1215/2SD1815-applied sets to be made small and slim • High fT • Fast switching time Applications • Relay drivers, high-speed inverters, converters, and other general high-c | SANYO 三洋 | | ||
PNP Transistors 文件：987.6 Kbytes Page：4 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：987.6 Kbytes Page：4 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：987.6 Kbytes Page：4 Pages | KEXIN 科信电子 | | ||
PNP Transistors 文件：987.6 Kbytes Page：4 Pages | KEXIN 科信电子 | | ||
Bipolar Transistor 文件：106.63 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：106.63 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 100V 3A TP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：106.63 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：TRANS PNP 100V 3A TPFA 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：106.63 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
PNP Transistors 文件：987.6 Kbytes Page：4 Pages | KEXIN 科信电子 | | ||
Bipolar Transistor 文件：106.63 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：106.63 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：106.63 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | | ||
Bipolar Transistor 文件：106.63 Kbytes Page：7 Pages | ONSEMI 安森美半导体 | |
2SB1215产品属性
- 类型
描述
- Pb-free：
Pb
- Status：
Active
- Polarity：
PNP
- Type：
Low VCE(sat)
- VCE(sat) Max (V)：
0.5
- IC Cont. (A)：
3
- VCEO Min (V)：
100
- VCBO (V)：
120
- VEBO (V)：
6
- VBE(sat) (V)：
0.9
- hFE Min：
140
- hFE Max：
280
- PTM Max (W)：
1
- Package Type：
DPAK-3/TO-252-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
25+23+ |
28461 |
绝对原装正品全新进口深圳现货 |
|||||
SANYO/三洋 |
2450+ |
TO-252 |
6540 |
只做原装正品现货或订货!终端客户免费申请样品! |
|||
ON/安森美 |
23+ |
TO-252 |
46000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
SANYO/三洋 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SANYO/三洋 |
25+ |
D-PAK |
880000 |
明嘉莱只做原装正品现货 |
|||
SANYO/三洋 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
ONSEMI/安森美 |
23+ |
TO-252 |
360000 |
专业供应MOS/LDO/晶体管/有大量价格低 |
|||
SANYO/三洋 |
23+ |
251-252 |
50000 |
全新原装正品现货,支持订货 |
|||
ROHM |
24+ |
60000 |
2SB1215规格书下载地址
2SB1215参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB1237
- 2SB1236
- 2SB1235
- 2SB1234
- 2SB1232
- 2SB1231
- 2SB1230
- 2SB1229
- 2SB1228
- 2SB1227
- 2SB1226
- 2SB1225
- 2SB1224
- 2SB1223
- 2SB1222
- 2SB1221P...Q
- 2SB1221
- 2SB1220Q...T
- 2SB1220
- 2SB122
- 2SB1219Q...S
- 2SB1219AQ...AS
- 2SB1219A
- 2SB1219
- 2SB1218Q...S
- 2SB1218AQ...AS
- 2SB1218A
- 2SB1218
- 2SB1217
- 2SB1216
- 2SB1214
- 2SB1213
- 2SB1212
- 2SB1211
- 2SB1210
- 2SB121
- 2SB1209
- 2SB1208
- 2SB1207
- 2SB1206
- 2SB1205
- 2SB1204
- 2SB1203
- 2SB1202
- 2SB1201
- 2SB120
- 2SB12
- 2SB119A
- 2SB1199
- 2SB1198K
- 2SB1198
- 2SB1197
- 2SB1194
- 2SB1193
- 2SB1192
- 2SB1190
- 2SB1189
- 2SB1188
- 2SB1187
2SB1215数据表相关新闻
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2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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