型号 功能描述 生产厂家&企业 LOGO 操作
2SB1201T-E

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-

ONSEMI

安森美半导体

2SB1201T-E

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 2A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

High-Current Switching Applications

■ Features ● Low collector-to-emitter saturation voltage. ● Fast switching speed. ● Large current capacity and wide ASO. ● Complementary to 2SD1801

KEXIN

科信电子

High-Current Switching Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Applications · Voltage regulators, relay drivers, lam

SANYOSanyo Semicon Device

三洋三洋电机株式会社

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacitance and wide ASO • Small and slim package making it easy to make 2SB1201/2SD1801-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and

ISC

无锡固电

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-

ONSEMI

安森美半导体

isc Silicon PNP Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications

ISC

无锡固电

2SB1201T-E产品属性

  • 类型

    描述

  • 型号

    2SB1201T-E

  • 功能描述

    两极晶体管 - BJT BIP PNP 2A 50V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-7 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
24+
TPFA
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
SANYO/三洋
24+
NA/
3500
优势代理渠道,原装正品,可全系列订货开增值税票
SANYO
2016+
TO252
6523
只做原装正品现货!或订货!
ONSEMI
两年内
N/A
13300
原装现货,实单价格可谈
SANOY
08+
TO252
2095
一级代理,专注军工、汽车、医疗、工业、新能源、电力
SANYO
24+
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
SANYO/三洋
2223+
TO-252
26800
只做原装正品假一赔十为客户做到零风险
SANYO/三洋
25+
TO-252
860000
明嘉莱只做原装正品现货
TO251
23+
NA
15659
振宏微专业只做正品,假一罚百!
SANYO
25+23+
TO-252
17465
绝对原装正品全新进口深圳现货

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