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2SB1201晶体管资料

2SB1201别名：2SB1201三极管、2SB1201晶体管、2SB1201晶体三极管
2SB1201生产厂家：日本三洋公司
2SB1201制作材料：Si-PNP
2SB1201性质：开关管（S）_功率放大（L）
2SB1201封装形式：直插封装
2SB1201极限工作电压：60V
2SB1201最大电流允许值：2A
2SB1201最大工作频率：150MHZ
2SB1201引脚数：3
2SB1201最大耗散功率：15W
2SB1201放大倍数：
2SB1201图片代号：A-80
2SB1201vtest：60
2SB1201htest：150000000
2SB1201atest：2
2SB1201wtest：15

2SB1201代换 2SB1201用什么型号代替：2SA1241,2SB928,2SB1184,

2SB1201价格

参考价格：￥1.2588

型号：2SB1201S-E 品牌：ON 备注：这里有2SB1201多少钱，2025年最近7天走势，今日出价，今日竞价，2SB1201批发/采购报价，2SB1201行情走势销售排行榜，2SB1201报价。

型号	功能描述	生产厂家企业	LOGO
2SB1201	High-Current Switching Applications ■ Features ● Low collector-to-emitter saturation voltage. ● Fast switching speed. ● Large current capacity and wide ASO. ● Complementary to 2SD1801	KEXIN 科信电子	KEXIN
2SB1201	High-Current Switching Applications Features · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Applications · Voltage regulators, relay drivers, lam	SANYO 三洋	SANYO
2SB1201	isc Silicon PNP Power Transistor DESCRIPTION • Large current capacitance and wide ASO • Small and slim package making it easy to make 2SB1201/2SD1801-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and	ISC 无锡固电	ISC
2SB1201	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SB1201	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications	ISC 无锡固电	ISC
2SB1201	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications	ISC 无锡固电	ISC
2SB1201	双极晶体管，-50V，-2A，低饱和压，(PNP)NPN 单 TP/TP-FA	ONSEMI 安森美半导体	ONSEMI
2SB1201-251	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications	ISC 无锡固电	ISC
2SB1201-252	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications	ISC 无锡固电	ISC
2SB1201S-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SB1201S-E	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications	ISC 无锡固电	ISC
2SB1201S-TL-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SB1201T-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SB1201T-TL-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SB1201_15	PNP Transistors 文件：1.5914 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1201-R	PNP Transistors 文件：1.5914 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1201-S	PNP Transistors 文件：1.5914 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1201S-TL-E	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 50V 2A TP-FA 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
2SB1201-T	PNP Transistors 文件：1.5914 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1201T-E	封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 50V 2A TP 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
2SB1201-U	PNP Transistors 文件：1.5914 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN

2SB1201产品属性

类型
描述
型号
2SB1201
制造商
Distributed By MCM
功能描述
SUB ONLY SANYO TRANSISTORSC-64TP -60V -2A 15W BCE

2SB1201供应商更多...

更新时间：2025-12-25 11:09:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
贸泽芯城（深圳）电子科技有限公司	2SB1201T-TL-E	SANYO/三洋	23+	251-252	328888	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市纳立科技有限公司	2SB1201T-TL-EX		三年内		1983	只做原装正品	询价
现代芯城（深圳）科技有限公司	2SB1201S-TL-E		24+	N/A	73000	一级代理-主营优势-实惠价格-不悔选择	询价
深圳市凌旭科技有限公司	2SB1201S-TL	SANYO	2016+	TO-252	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市莱克讯科技有限公司	2SB1201S	SANYO	1922+	SOT-252	35689	原装进口现货库存专业工厂研究所配单供货	询价
深圳市安富世纪电子有限公司	2SB1201S-TL	SANYO/TOSHIBA	23+	TO-252	6800	专注配单,只做原装进口现货	询价
深圳市威尔健半导体有限公司	2SB1201T-TL-E贴片三极管	SANYO/三洋	23+	TO-252	50000	全新原装正品现货,支持订货	询价
深圳市华斯顿科技有限公司	2SB1201/B1201	Sanyo	25+23+	To-252	31669	绝对原装正品全新进口深圳现货	询价
洪芯国际半导体（深圳）有限公司	2SB1201T-TL-E	SANYO/三洋	25+	SOT23-5	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市一线半导体有限公司	2SB1201T	SANYO	24+		2387		询价

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2SB1201晶体管资料

2SB1201价格

2SB1201产品属性

2SB1201供应商更多...

2SB1201芯片相关品牌

2SB1201规格书下载地址

2SB1201参数引脚图相关

2SB1201数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引