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2SB1201晶体管资料

2SB1201别名：2SB1201三极管、2SB1201晶体管、2SB1201晶体三极管
2SB1201生产厂家：日本三洋公司
2SB1201制作材料：Si-PNP
2SB1201性质：开关管（S）_功率放大（L）
2SB1201封装形式：直插封装
2SB1201极限工作电压：60V
2SB1201最大电流允许值：2A
2SB1201最大工作频率：150MHZ
2SB1201引脚数：3
2SB1201最大耗散功率：15W
2SB1201放大倍数：
2SB1201图片代号：A-80
2SB1201vtest：60
2SB1201htest：150000000
2SB1201atest：2
2SB1201wtest：15

2SB1201代换 2SB1201用什么型号代替：2SA1241,2SB928,2SB1184,

2SB1201价格

参考价格：￥1.2588

型号：2SB1201S-E 品牌：ON 备注：这里有2SB1201多少钱，2025年最近7天走势，今日出价，今日竞价，2SB1201批发/采购报价，2SB1201行情走势销售排行榜，2SB1201报价。

型号	功能描述	生产厂家&企业	LOGO
2SB1201	High-Current Switching Applications ■ Features ● Low collector-to-emitter saturation voltage. ● Fast switching speed. ● Large current capacity and wide ASO. ● Complementary to 2SD1801	KEXIN 科信电子	KEXIN
2SB1201	High-Current Switching Applications Features · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Applications · Voltage regulators, relay drivers, lam	SANYOSanyo Semicon Device 三洋三洋电机株式会社	SANYO
2SB1201	isc Silicon PNP Power Transistor DESCRIPTION • Large current capacitance and wide ASO • Small and slim package making it easy to make 2SB1201/2SD1801-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and	ISC 无锡固电	ISC
2SB1201	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SB1201	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications	ISC 无锡固电	ISC
2SB1201	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications	ISC 无锡固电	ISC
2SB1201-251	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications	ISC 无锡固电	ISC
2SB1201-252	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.7V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications	ISC 无锡固电	ISC
2SB1201S-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SB1201S-E	isc Silicon PNP Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.4V(Max)@IC= -1A ·Good Linearity of hFE ·Large Collector Current IC ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching applications	ISC 无锡固电	ISC
2SB1201S-TL-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SB1201T-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SB1201T-TL-E	Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-	ONSEMI 安森美半导体	ONSEMI
2SB1201_15	PNP Transistors 文件：1.5914 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1201-R	PNP Transistors 文件：1.5914 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1201-S	PNP Transistors 文件：1.5914 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1201S-TL-E	封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 50V 2A TP-FA 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
2SB1201-T	PNP Transistors 文件：1.5914 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1201T-E	封装/外壳：TO-251-3 短引线，IPak，TO-251AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 50V 2A TP 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
2SB1201-U	PNP Transistors 文件：1.5914 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN

2SB1201产品属性

类型
描述
型号
2SB1201
制造商
Distributed By MCM
功能描述
SUB ONLY SANYO TRANSISTORSC-64TP -60V -2A 15W BCE

2SB1201供应商更多...

更新时间：2025-8-6 18:06:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市星辰微电科技有限公司	2SB1201	ON	22+	TO-220-3	50000	ON二三极管全系列在售	询价
深圳市富芯乐电子科技有限公司	2SB1201S	SANYO	24+	SOT-252	4000	只做原装正品现货欢迎来电查询15919825718	询价
深圳市科恒伟业电子有限公司	2SB1201	SANYO	1822+	TO-251	9852	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市振宏微科技有限公司	2SB1201S,BA280,UCLAMP1201P.TCT	TO-252	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
贸泽芯城（深圳）电子科技有限公司	2SB1201L-S-TN3-R	UTG	23+	SOT-252	388000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市近平电子有限公司	2SB1201	SANYO	12+	TO-252	2500	原装现货/特价	询价
深圳市华斯顿科技有限公司	2SB1201/B1201	Sanyo	25+23+	To-252	31669	绝对原装正品全新进口深圳现货	询价
深圳市宏捷佳电子科技有限公司	2SB1201S-E	onsemi	25+	TO-252-3 DPak(2 引线 + 接片	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市一线半导体有限公司	2SB1201	SANYO	24+	SOT252	20000		询价
深圳市芯皇电子有限公司	2SB1201	ON	22+	TO-220-3	50000	原装正品假一罚十,代理渠道价格优	询价

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2SB1201规格书下载地址

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2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
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2SB1201晶体管资料

2SB1201价格

2SB1201产品属性

2SB1201供应商更多...

2SB1201芯片相关品牌

2SB1201规格书下载地址

2SB1201参数引脚图相关

2SB1201数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引