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2SB1188晶体管资料

2SB1188别名：2SB1188三极管、2SB1188晶体管、2SB1188晶体三极管
2SB1188生产厂家：TOY
2SB1188制作材料：Si-PNP
2SB1188性质：表面帖装型（SMD）_低频或音频放大（LF）
2SB1188封装形式：直插封装
2SB1188极限工作电压：40V
2SB1188最大电流允许值：2A
2SB1188最大工作频率：100MHZ
2SB1188引脚数：3
2SB1188最大耗散功率：
2SB1188放大倍数：
2SB1188图片代号：H-100
2SB1188vtest：40
2SB1188htest：100000000
2SB1188atest：2
2SB1188wtest：0

2SB1188代换 2SB1188用什么型号代替：2SA1203,2SA1213,2SB1073,2SB1114,2SB1123,

2SB1188价格

参考价格：￥0.8884

型号：2SB1188T100Q 品牌：Rohm 备注：这里有2SB1188多少钱，2025年最近7天走势，今日出价，今日竞价，2SB1188批发/采购报价，2SB1188行情走势销售排行榜，2SB1188报价。

型号	功能描述	生产厂家&企业	LOGO
2SB1188	Medium power transistor (-32V, -2A) ● Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. ● Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1188	PNP Silicon Medium Power Transistor DESCRIPTION The 2SB1188 is designed for medium poweramplifier applications. FEATURES ● Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) ● RoHS Compliant Product	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1188	TRANSISTOR(PNP) FEATURES ● Low VCE(sat). ● Complements the 2SD1766	HTSEMI 金誉半导体	HTSEMI
2SB1188	Epitaxial Planar PNP Transistors Epitaxial Planar PNP Transistors P/b Lead(Pb)-Free	WEITRON	WEITRON
2SB1188	Silicon PNP transistor in a SOT-89 Plastic Package Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat),complements the 2SD1766. Applications Medium power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SB1188	Plastic-Encapsulate Transistors FEATURES • Low VCE(sat). • Complements the 2SD1766	HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司	HOTTECH
2SB1188	Medium power transistor (32V, 2A) Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1188	SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low VCE(sat). ● Complements the 2SD1766	JIANGSU 长电科技	JIANGSU
2SB1188	Medium power transistor FEATURES ● Low VCE(SAT)=-0.5V(Typ.) (IC/IB=-2A/-0.2A). ● Complementary the 2SD1766. APPLICATIONS ● Epitaxial planar type. ● PNP silicon transistor.	BILIN 银河微电	BILIN
2SB1188	Low VCE(sat). FEATURES • Low VCE(sat). • Complements the 2SD1766	MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司	MAKOSEMI
2SB1188	TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: -2 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SB1188	Medium power transistor (32V, 2A) Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1188	SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) ● Complements the 2SD1766 ● Weight: 0.05 g ● RoHS product for packing code suffix G Halogen free product for packing code suffix H	WILLASWILLAS ELECTRONIC CORP 威伦威伦电子股份有限公司	WILLAS
2SB1188	Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Low VCE(sat). ● Complements the 2SD1766	LEIDITECH 雷卯电子	LEIDITECH
2SB1188	Medium power Transistor(32V,2A) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.	ROHM 罗姆	ROHM
2SB1188	Medium power transistor(-32V,-2A) FEATURES Low VCE(SAT)=-0.5V(Typ.) (IC/IB=-2A/-0.2A). Complementary the 2SD1766. APPLICATIONS Epitaxial planar type. PNP silicon transistor.	DGNJDZ 南晶电子	DGNJDZ
2SB1188	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)	YFWDIODE 佑风微电子	YFWDIODE
2SB1188	Medium power Transistor(-32V, -2A) ● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1188	MEDIUM POWER TRANSISTOR(-32V, -2A)	ROHM 罗姆	ROHM
2SB1188	Medium Power Transistor (32V, 2A) FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.	ROHM 罗姆	ROHM
2SB1188	MEDIUM POWER LOW VOLTAGE TRANSISTOR ■ DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. ■ FEATURES * High current output up to 3A * Low saturation voltage	UTC 友顺	UTC
2SB1188	Medium Power Transistor Features ● Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)	KEXIN 科信电子	KEXIN
2SB1188	Plastic-Encapsulated Transistors 文件：67.03 Kbytes Page：1 Pages	TEL 东电电子	TEL
2SB1188	MEDIUM POWER LOW VOLTAGE TRANSISTOR 文件：261.18 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1188	PNP Silicon Medium Power Transistor 文件：343.91 Kbytes Page：2 Pages	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1188_09	Medium power transistor (-32V, -2A) ● Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. ● Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1188_V01	Medium power Transistor(32V,2A) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M.	ROHM 罗姆	ROHM
2SB1188-E-AB3-R	MEDIUM POWER LOW VOLTAGE TRANSISTOR ■ DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. ■ FEATURES * High current output up to 3A * Low saturation voltage	UTC 友顺	UTC
2SB1188L-E-AB3-R	MEDIUM POWER LOW VOLTAGE TRANSISTOR ■ DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. ■ FEATURES * High current output up to 3A * Low saturation voltage	UTC 友顺	UTC
2SB1188L-P-AB3-R	MEDIUM POWER LOW VOLTAGE TRANSISTOR ■ DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. ■ FEATURES * High current output up to 3A * Low saturation voltage	UTC 友顺	UTC
2SB1188L-Q-AB3-R	MEDIUM POWER LOW VOLTAGE TRANSISTOR ■ DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. ■ FEATURES * High current output up to 3A * Low saturation voltage	UTC 友顺	UTC
2SB1188L-X-AB3-R	MEDIUM POWER LOW VOLTAGE TRANSISTOR ■ DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. ■ FEATURES * High current output up to 3A * Low saturation voltage	UTC 友顺	UTC
2SB1188P	MEDIUM POWER TRANSISTOR(-32V, -2A)	ROHM 罗姆	ROHM
2SB1188-P	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)	YFWDIODE 佑风微电子	YFWDIODE
2SB1188-P	PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -2A • Collector-base voltage: V(BR)CBO	MCC 美微科	MCC
2SB1188-P-AB3-R	MEDIUM POWER LOW VOLTAGE TRANSISTOR ■ DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. ■ FEATURES * High current output up to 3A * Low saturation voltage	UTC 友顺	UTC
2SB1188PT	PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 2 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(typ.)(IC/IB=-2A/-0.2A) APPLICATION * Power driver and Dc to DC convertor .	CHENMKO 力勤	CHENMKO
2SB1188Q	MEDIUM POWER TRANSISTOR(-32V, -2A)	ROHM 罗姆	ROHM
2SB1188-Q	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)	YFWDIODE 佑风微电子	YFWDIODE
2SB1188-Q	PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -2A • Collector-base voltage: V(BR)CBO	MCC 美微科	MCC
2SB1188-Q-AB3-R	MEDIUM POWER LOW VOLTAGE TRANSISTOR ■ DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. ■ FEATURES * High current output up to 3A * Low saturation voltage	UTC 友顺	UTC
2SB1188R	MEDIUM POWER TRANSISTOR(-32V, -2A)	ROHM 罗姆	ROHM
2SB1188-R	PNP Transistors Features ● Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)	YFWDIODE 佑风微电子	YFWDIODE
2SB1188-R	PNP Plastic-Encapsulate Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -2A • Collector-base voltage: V(BR)CBO	MCC 美微科	MCC
2SB1188T100Q	Medium power transistor (32V, 2A) Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1188T100R	Medium power transistor (32V, 2A) Medium power transistor (−32V, −2A) Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 Structure Epitaxial planar type PNP silicon transistor	ROHM 罗姆	ROHM
2SB1188-X-AB3-R	MEDIUM POWER LOW VOLTAGE TRANSISTOR ■ DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. ■ FEATURES * High current output up to 3A * Low saturation voltage	UTC 友顺	UTC
2SB1188_09	MEDIUM POWER LOW VOLTAGE TRANSISTOR 文件：261.18 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1188_10	PNP Silicon Medium Power Transistor 文件：343.91 Kbytes Page：2 Pages	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1188_15	PNP Silicon Medium Power Transistor 文件：378.43 Kbytes Page：2 Pages	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
2SB1188_15	TRANSISTOR (PNP) 文件：134.44 Kbytes Page：1 Pages	WINNERJOIN 永而佳	WINNERJOIN
2SB1188_15	PNP Transistor 文件：897.54 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1188G-X-AB3-R	MEDIUM POWER LOW VOLTAGE TRANSISTOR 文件：261.18 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1188L-X-AB3-R	MEDIUM POWER LOW VOLTAGE TRANSISTOR 文件：261.18 Kbytes Page：4 Pages	UTC 友顺	UTC
2SB1188-P	PNP Plastic-Encapsulate Transistors 文件：246.82 Kbytes Page：2 Pages	MCC 美微科	MCC
2SB1188-P	PNP Transistor 文件：897.54 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1188-P_13	PNP Plastic-Encapsulate Transistors 文件：246.82 Kbytes Page：2 Pages	MCC 美微科	MCC
2SB1188-Q	PNP Transistor 文件：897.54 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1188-Q	PNP Plastic-Encapsulate Transistors 文件：246.82 Kbytes Page：2 Pages	MCC 美微科	MCC
2SB1188-R	PNP Transistor 文件：897.54 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN

2SB1188产品属性

类型
描述
型号
2SB1188
制造商
Panasonic Industrial Company
功能描述
TRANSISTOR

2SB1188供应商更多...

更新时间：2025-8-7 15:49:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市昌和盛利电子有限公司	2SB1188	ROHM	23+	SOT89	11092		询价
深圳市明嘉莱科技有限公司	2SB1188	CJ/长电	25+	SOT-89	157376	明嘉莱只做原装正品现货	询价
深圳市鸿昌盛电子科技有限公司	2SB1188	ROHM	2014+		1564	公司原装现货常备物料!	询价
深圳兆威电子有限公司	2SB1188	ROHM	23+	SOT-89	63000	原装正品现货	询价
深圳市富利微电子科技有限公司	2SB1188	ROHM/罗姆	24+	SOT-89	30000	房间原装现货特价热卖,有单详谈	询价
深圳市恒凯威科技开发有限公司	2SB1188	ROHM/罗姆	21+	SOT89	8080	只做原装,质量保证	询价
深圳市欧立现代科技有限公司	2SB1188	ROHM	24+	SOT	9500	原装现货,可开13%税票	询价
深圳市拓亿芯电子有限公司	2SB1188	ROHM/罗姆	23+	SOT89	15000	全新原装现货,价格优势	询价
瀚佳科技(深圳)有限公司	2SB1188T100R	ROHM	24+	SOT89	362000	一级代理/全新现货/长期供应!	询价
深圳市汇莱威科技有限公司	2SB1188T100R	ROHM/罗姆	24+	SOT-89	505348	免费送样原盒原包现货一手渠道联系	询价

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DdatasheetPDF页码索引

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2SB1188晶体管资料

2SB1188价格

2SB1188产品属性

2SB1188供应商更多...

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DdatasheetPDF页码索引