PNP Plastic-Encapsulate Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Power dissipation: PCM = 0.5W(Tamb=25°C) • Collector current: ICM = -2A • Collector-base voltage: V(BR)CBO

PNP Transistors

Features ● Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A)

PNP Transistor

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PNP Plastic-Encapsulate Transistors

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Medium power Transistor(-32V, -2A)

● Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC / IB = -2A / -0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. ● Structure Epitaxial planar type PNP silicon transistor

MEDIUM POWER TRANSISTOR(-32V, -2A)

Medium Power Transistor (32V, 2A)

FTR • FTL Low profile flat-package for limited spece applications. Tape type can be used on automated line. Bulk type is also available.

MEDIUM POWER LOW VOLTAGE TRANSISTOR

■ DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. ■ FEATURES * High current output up to 3A * Low saturation voltage

Plastic-Encapsulated Transistors

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