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2SB111晶体管资料
2SB111别名:2SB111三极管、2SB111晶体管、2SB111晶体三极管
2SB111生产厂家:日本日电公司
2SB111制作材料:Ge-PNP
2SB111性质:低频或音频放大 (LF)
2SB111封装形式:直插封装
2SB111极限工作电压:25V
2SB111最大电流允许值:0.05A
2SB111最大工作频率:<1MHZ或未知
2SB111引脚数:3
2SB111最大耗散功率:0.1W
2SB111放大倍数:β>30
2SB111图片代号:C-47
2SB111vtest:25
2SB111htest:999900
- 2SB111atest:.05
2SB111wtest:.1
2SB111代换 2SB111用什么型号代替:AC125,AC126,AC151,2SB54,2SB56,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SILICONPNPEPITAXIAL(LOWFREQUENCYHIGHVOLTAGEAMPLIFIER) COMPLEMENTARYPAIR2SD1609and2SD1610(NPN) | HitachiHitachi, Ltd. 日立公司 | |||
PNPSILICONEPITAXIALTRANSISTORPOWERMINIMOLD DESCRIPTION 2SB1114isdesignedforaudiofrequencypoweramplifierandswitchingapplication,especiallyinHybridIntegratedCircuits. FEATURES ●WorldStandardMiniaturePackage ●HighDCCurrentGainhFE=135to600 ●LowVCE(sat).VCE(sat)=-0.3Vat1.5A ●Complementto2SD1614 | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
PNPSiliconEpitaxialTransistor ■Features ●HighDccurrentgainhFE=135to600 ●LowVCE(sat)VCE(sat)=-0.3Vat1.5A ●Complementaryto2SD1614 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPSiliconGeneralUSETransistors PNP-SiliconGeneraluseTransistors 1W、1.5A、25V Applications:Canbeusedforswitchingandamplifyinginvarious electricalandelectroniccircuit. | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
Worldstandardminiaturepackage FEATURES WorldStandardMiniaturePackage LowVCE(sat):VCE(sat)=-0.2Vat1A | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | |||
PNPSiliconEpitaxialTransistor ■Features ●LowVCE(sat)VCE(sat)=-0.2Vat1A ●Complementaryto2SD1615 | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPSILICONEPITAXIALTRANSISTORPOWERMINIMOLD DESCRIPTION 2SB1115,2SB1115Aaredesignedforaudiofrequencypoweramplifierandswitchingapplication,especiallyinHybridIntegratedCircuit. FEATURES ●WorldStandardMiniaturePackage ●LowVCE(sat):VCE(sat)=-0.2Vat1A ●Complementto2SD1615,2SD1615A | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
PNPSILICONEPITAXIALTRANSISTORPOWERMINIMOLD DESCRIPTION 2SB1115,2SB1115Aaredesignedforaudiofrequencypoweramplifierandswitchingapplication,especiallyinHybridIntegratedCircuit. FEATURES ●WorldStandardMiniaturePackage ●LowVCE(sat):VCE(sat)=-0.2Vat1A ●Complementto2SD1615,2SD1615A | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
PNPSiliconEpitaxialTransistor Features ●Worldstandardminiaturepackage. ●LowVCE(sat):VCE(sat)=-0.2Vat1A | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPSILICONTRANSISTORS DESCRIPTION The2SB1116/2SB1116AaredisignedforuseindriverandoutputstagesofAFamplifier,generalpurposeapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
PNPEPITAXIALSILICONTRANSISTOR DESCRIPTION ComplementtoUTC2SD1616/A | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
PNPGeneralPurposeTransistor PNPGeneralPurposeTransistor P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | |||
SOT-23Plastic-EncapsulateTransistors FEATURES HighCollectorPowerDissipation Complementaryto2SD1616 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES •HighCollectorPowerDissipation. •Complementaryto2SD1616/2SD1616A | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
PNPPlasticEncapsulatedTransistor FEATURES •HighcurrentsurfacemountPNPsiliconswitchingtransistor forLoadmanagementinportableapplications | SECOS SeCoS Halbleitertechnologie GmbH | |||
TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES •HighCollectorPowerDissipation. •Complementaryto2SD1616/2SD1616A | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | |||
TO-92Plastic-EncapsulateTransistors FEATURES HighCollectorPowerDissipation Complementaryto2SD1616/2SD1616A | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SILICONTRANSISTORS PNPSILICONEPITAXIALTRANSISTOR FORLOW-FREQUENCYPOWERAMPLIFIERSANDMID-SPEEDSWITCHING FEATURES •LowVCE(sat) VCE(sat)=−0.20VTYP.(IC=−1.0A,IB=−50mA) •HighPTinsmalldimensionwithgeneral-purpose PT=0.75W,VCEO=−50/−60V,IC(DC)=−1.0A •Complementarytransistor | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
TO-92Plastic-EncapsulateTransistors FEATURES HighCollectorPowerDissipation Complementaryto2SD1616/2SD1616A | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
TRANSISTOR(PNP) TRANSISTOR(PNP) FEATURES •HighCollectorPowerDissipation. •Complementaryto2SD1616/2SD1616A | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | |||
TO-92Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES •HighCollectorPowerDissipation. •Complementaryto2SD1616/2SD1616A | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
PNPGeneralPurposeTransistor PNPGeneralPurposeTransistor P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | |||
PNPSILICONTRANSISTORS DESCRIPTION The2SB1116/2SB1116AaredisignedforuseindriverandoutputstagesofAFamplifier,generalpurposeapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
PNPPlasticEncapsulatedTransistor FEATURES •HighCollectorPowerDissipation •Complementaryto2SD1616A | SECOS SeCoS Halbleitertechnologie GmbH | |||
TO-92Plastic-EncapsulateTransistors FEATURES HighCollectorPowerDissipation Complementaryto2SD1616/2SD1616A | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
PNPPlasticEncapsulatedTransistor FEATURES •HighcurrentsurfacemountPNPsiliconswitchingtransistor forLoadmanagementinportableapplications | SECOS SeCoS Halbleitertechnologie GmbH | |||
PNPPlasticEncapsulatedTransistor FEATURES •HighcurrentsurfacemountPNPsiliconswitchingtransistor forLoadmanagementinportableapplications | SECOS SeCoS Halbleitertechnologie GmbH | |||
TO-92Plastic-EncapsulateTransistors FEATURES HighCollectorPowerDissipation Complementaryto2SD1616/2SD1616A | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
Suitablefordriverofsolenoidormotor,orelectronicflash SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
Low-Voltage,High-CurrentAmp,MutingApplications Features ·Lowcollector-to-emittersaturationvoltage. ·Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s. | SANYOSanyo 三洋三洋电机株式会社 | |||
TRANSISTOR(PNP) FEATURES ●SmallFlatPackage ●LFAmplifier,ElectronicGovernorApplications | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
PNPSiliconMediumPowerTransistor FEATURES Powerdissipation PCM:500mW˄Tamb=25°C Collectorcurrent ICM:-1A Collector-basevoltage VB(BR)CBO:-25V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55ćto+150ć | SECOS SeCoS Halbleitertechnologie GmbH | |||
Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:500mW(Tamb=25℃) Collectorcurrent ICM:-1A Collectorcurrent(Pulse) ICP:-2A Collector-basevoltage V(BR)CBO:-25V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | |||
PNPEpitaxialPlanarSiliconTransistors Features ●Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s. | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
LFAmp,ElectronicGovernorApplications LFAmplifier,ElectronicGovernorApplications Features ·Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s. | SANYOSanyo 三洋三洋电机株式会社 | |||
PNPEpitaxialPlanarSiliconTransistors FEATURES ●VerysmallsizemakingiteasytoprovideHigh-density,small-sizehybridIC’s. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | |||
SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●Lowcollector-emittersaturationvoltageVCE(sat) ●Satisfactoryoperationperformancesathighefficiencywiththelowvoltagepowersupply. | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | |||
Plastic-EncapsulateTransistors FEATURES •Verysmallsizemakingiteasytoprovide •High-density,small-sizehybridIC,S | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | |||
Verysmallsizemakingiteasytoprovide FEATURES •Verysmallsizemakingiteasytoprovide •High-density,small-sizehybridICS | MAKOSEMI MAKO SEMICONDUCTOR CO.,LIMITED | |||
PNPEpitaxialPlanarSiliconTransistor Features Verysmallsizemakingiteasytoprovidehighdensity, small-sizedhybridIC’s. | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
iscSiliconPNPDarlingtionPowerTransistor 文件:256.49 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
OldCompanyNameinCatalogsandOtherDocuments 文件:1.27796 Mbytes Page:6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
PNPSILICONEPITAXIALTRANSISTORPOWERMINIMOLD 文件:1.27796 Mbytes Page:6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
PNPTransistors 文件:1.1251 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.11935 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.1251 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.11935 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.1251 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.11935 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.1251 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.11935 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
OldCompanyNameinCatalogsandOtherDocuments 文件:1.34291 Mbytes Page:6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
OldCompanyNameinCatalogsandOtherDocuments 文件:1.34291 Mbytes Page:6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
PNPSILICONEPITAXIALTRANSISTORPOWERMINIMOLD 文件:1.34291 Mbytes Page:6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
PNPTransistors 文件:1.22581 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
OldCompanyNameinCatalogsandOtherDocuments 文件:1.34291 Mbytes Page:6 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | |||
PNPTransistors 文件:1.23801 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.25051 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.23801 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | |||
PNPTransistors 文件:1.25051 Mbytes Page:3 Pages | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 |
2SB111产品属性
- 类型
描述
- 型号
2SB111
- 制造商
HITACHI
- 制造商全称
Hitachi Semiconductor
- 功能描述
SILICON PNP EPITAXIAL(LOW FREQUENCY HIGH VOLTAGE AMPLIFIER)
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NEC |
20+ |
SOT-89 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
2339+ |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
||||
NEC |
21+ |
SOT89 |
3220 |
原装现货假一赔十 |
|||
NEC |
22+ |
SOT89 |
2987 |
只售原装自家现货!诚信经营!欢迎来电 |
|||
NEC/Renesas Electronics Americ |
21+ |
SOT89 |
3220 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
NEC |
22+23+ |
Sot-89 |
32941 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
2023+ |
SOT-89 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
NEC |
23+ |
SOT89 |
6000 |
原装正品假一罚百!可开增票! |
|||
NEC |
2008++ |
SOT-89 |
77400 |
新进库存/原装 |
2SB111规格书下载地址
2SB111参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB1134
- 2SB1133
- 2SB1132
- 2SB1131
- 2SB1127
- 2SB1126
- 2SB1125
- 2SB1124
- 2SB1123
- 2SB1122
- 2SB1121
- 2SB1120
- 2SB112
- 2SB1119
- 2SB1118
- 2SB1117
- 2SB1116A
- 2SB1116
- 2SB1115A
- 2SB1115
- 2SB1114
- 2SB1113
- 2SB1112
- 2SB1111
- 2SB1110
- 2SB1109
- 2SB1108
- 2SB1107
- 2SB1106
- 2SB1105
- 2SB1104
- 2SB1103
- 2SB1102
- 2SB1101
- 2SB1100
- 2SB110
- 2SB109B
- 2SB109A
- 2SB1099
- 2SB1098
- 2SB1097
- 2SB1096
- 2SB1095
- 2SB1094
- 2SB1093
- 2SB1091
- 2SB1090
- 2SB1089
- 2SB1087
- 2SB1086
- 2SB1085
2SB111数据表相关新闻
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2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SA2198
2SA2198,全新原装当天发货或门市自取0755-82732291.
2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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