2SB111晶体管资料

  • 2SB111别名:2SB111三极管、2SB111晶体管、2SB111晶体三极管

  • 2SB111生产厂家:日本日电公司

  • 2SB111制作材料:Ge-PNP

  • 2SB111性质:低频或音频放大 (LF)

  • 2SB111封装形式:直插封装

  • 2SB111极限工作电压:25V

  • 2SB111最大电流允许值:0.05A

  • 2SB111最大工作频率:<1MHZ或未知

  • 2SB111引脚数:3

  • 2SB111最大耗散功率:0.1W

  • 2SB111放大倍数:β>30

  • 2SB111图片代号:C-47

  • 2SB111vtest:25

  • 2SB111htest:999900

  • 2SB111atest:.05

  • 2SB111wtest:.1

  • 2SB111代换 2SB111用什么型号代替:AC125,AC126,AC151,2SB54,2SB56,

型号 功能描述 生产厂家&企业 LOGO 操作

SILICONPNPEPITAXIAL(LOWFREQUENCYHIGHVOLTAGEAMPLIFIER)

COMPLEMENTARYPAIR2SD1609and2SD1610(NPN)

HitachiHitachi, Ltd.

日立公司

Hitachi

PNPSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

DESCRIPTION 2SB1114isdesignedforaudiofrequencypoweramplifierandswitchingapplication,especiallyinHybridIntegratedCircuits. FEATURES ●WorldStandardMiniaturePackage ●HighDCCurrentGainhFE=135to600 ●LowVCE(sat).VCE(sat)=-0.3Vat1.5A ●Complementto2SD1614

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

PNPSiliconEpitaxialTransistor

■Features ●HighDccurrentgainhFE=135to600 ●LowVCE(sat)VCE(sat)=-0.3Vat1.5A ●Complementaryto2SD1614

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPSiliconGeneralUSETransistors

PNP-SiliconGeneraluseTransistors 1W、1.5A、25V Applications:Canbeusedforswitchingandamplifyinginvarious electricalandelectroniccircuit.

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

Worldstandardminiaturepackage

FEATURES WorldStandardMiniaturePackage LowVCE(sat):VCE(sat)=-0.2Vat1A

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

SKTECHNOLGY

PNPSiliconEpitaxialTransistor

■Features ●LowVCE(sat)VCE(sat)=-0.2Vat1A ●Complementaryto2SD1615

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

DESCRIPTION 2SB1115,2SB1115Aaredesignedforaudiofrequencypoweramplifierandswitchingapplication,especiallyinHybridIntegratedCircuit. FEATURES ●WorldStandardMiniaturePackage ●LowVCE(sat):VCE(sat)=-0.2Vat1A ●Complementto2SD1615,2SD1615A

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

PNPSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

DESCRIPTION 2SB1115,2SB1115Aaredesignedforaudiofrequencypoweramplifierandswitchingapplication,especiallyinHybridIntegratedCircuit. FEATURES ●WorldStandardMiniaturePackage ●LowVCE(sat):VCE(sat)=-0.2Vat1A ●Complementto2SD1615,2SD1615A

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

PNPSiliconEpitaxialTransistor

Features ●Worldstandardminiaturepackage. ●LowVCE(sat):VCE(sat)=-0.2Vat1A

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPSILICONTRANSISTORS

DESCRIPTION The2SB1116/2SB1116AaredisignedforuseindriverandoutputstagesofAFamplifier,generalpurposeapplications.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

PNPEPITAXIALSILICONTRANSISTOR

DESCRIPTION ComplementtoUTC2SD1616/A

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

PNPGeneralPurposeTransistor

PNPGeneralPurposeTransistor P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON

SOT-23Plastic-EncapsulateTransistors

FEATURES HighCollectorPowerDissipation Complementaryto2SD1616

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •HighCollectorPowerDissipation. •Complementaryto2SD1616/2SD1616A

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

PNPPlasticEncapsulatedTransistor

FEATURES •HighcurrentsurfacemountPNPsiliconswitchingtransistor forLoadmanagementinportableapplications

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES •HighCollectorPowerDissipation. •Complementaryto2SD1616/2SD1616A

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

TO-92Plastic-EncapsulateTransistors

FEATURES HighCollectorPowerDissipation Complementaryto2SD1616/2SD1616A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SILICONTRANSISTORS

PNPSILICONEPITAXIALTRANSISTOR FORLOW-FREQUENCYPOWERAMPLIFIERSANDMID-SPEEDSWITCHING FEATURES •LowVCE(sat) VCE(sat)=−0.20VTYP.(IC=−1.0A,IB=−50mA) •HighPTinsmalldimensionwithgeneral-purpose PT=0.75W,VCEO=−50/−60V,IC(DC)=−1.0A •Complementarytransistor

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

TO-92Plastic-EncapsulateTransistors

FEATURES HighCollectorPowerDissipation Complementaryto2SD1616/2SD1616A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES •HighCollectorPowerDissipation. •Complementaryto2SD1616/2SD1616A

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •HighCollectorPowerDissipation. •Complementaryto2SD1616/2SD1616A

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

PNPGeneralPurposeTransistor

PNPGeneralPurposeTransistor P/bLead(Pb)-Free

WEITRONWEITRON

威堂電子科技

WEITRON

PNPSILICONTRANSISTORS

DESCRIPTION The2SB1116/2SB1116AaredisignedforuseindriverandoutputstagesofAFamplifier,generalpurposeapplications.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

PNPPlasticEncapsulatedTransistor

FEATURES •HighCollectorPowerDissipation •Complementaryto2SD1616A

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

TO-92Plastic-EncapsulateTransistors

FEATURES HighCollectorPowerDissipation Complementaryto2SD1616/2SD1616A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

PNPPlasticEncapsulatedTransistor

FEATURES •HighcurrentsurfacemountPNPsiliconswitchingtransistor forLoadmanagementinportableapplications

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

PNPPlasticEncapsulatedTransistor

FEATURES •HighcurrentsurfacemountPNPsiliconswitchingtransistor forLoadmanagementinportableapplications

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

TO-92Plastic-EncapsulateTransistors

FEATURES HighCollectorPowerDissipation Complementaryto2SD1616/2SD1616A

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

Suitablefordriverofsolenoidormotor,orelectronicflash

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

Low-Voltage,High-CurrentAmp,MutingApplications

Features ·Lowcollector-to-emittersaturationvoltage. ·Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s.

SANYOSanyo

三洋三洋电机株式会社

SANYO

TRANSISTOR(PNP)

FEATURES ●SmallFlatPackage ●LFAmplifier,ElectronicGovernorApplications

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

PNPSiliconMediumPowerTransistor

FEATURES Powerdissipation PCM:500mW˄Tamb=25°C Collectorcurrent ICM:-1A Collector-basevoltage VB(BR)CBO:-25V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55ćto+150ć

SECOS

SeCoS Halbleitertechnologie GmbH

SECOS

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:500mW(Tamb=25℃) Collectorcurrent ICM:-1A Collectorcurrent(Pulse) ICP:-2A Collector-basevoltage V(BR)CBO:-25V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TEL

TRANSYS Electronics Limited

TEL

PNPEpitaxialPlanarSiliconTransistors

Features ●Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s.

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

LFAmp,ElectronicGovernorApplications

LFAmplifier,ElectronicGovernorApplications Features ·Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s.

SANYOSanyo

三洋三洋电机株式会社

SANYO

PNPEpitaxialPlanarSiliconTransistors

FEATURES ●VerysmallsizemakingiteasytoprovideHigh-density,small-sizehybridIC’s.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN

SOT-89-3LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●Lowcollector-emittersaturationvoltageVCE(sat) ●Satisfactoryoperationperformancesathighefficiencywiththelowvoltagepowersupply.

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU

Plastic-EncapsulateTransistors

FEATURES •Verysmallsizemakingiteasytoprovide •High-density,small-sizehybridIC,S

HOTTECHGuangdong Hottech Co. Ltd.

合科泰广东合科泰实业有限公司

HOTTECH

Verysmallsizemakingiteasytoprovide

FEATURES •Verysmallsizemakingiteasytoprovide •High-density,small-sizehybridICS

MAKOSEMI

MAKO SEMICONDUCTOR CO.,LIMITED

MAKOSEMI

PNPEpitaxialPlanarSiliconTransistor

Features Verysmallsizemakingiteasytoprovidehighdensity, small-sizedhybridIC’s.

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

iscSiliconPNPDarlingtionPowerTransistor

文件:256.49 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

OldCompanyNameinCatalogsandOtherDocuments

文件:1.27796 Mbytes Page:6 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

PNPSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

文件:1.27796 Mbytes Page:6 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

PNPTransistors

文件:1.1251 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.11935 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.1251 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.11935 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.1251 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.11935 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.1251 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.11935 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

OldCompanyNameinCatalogsandOtherDocuments

文件:1.34291 Mbytes Page:6 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

OldCompanyNameinCatalogsandOtherDocuments

文件:1.34291 Mbytes Page:6 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

PNPSILICONEPITAXIALTRANSISTORPOWERMINIMOLD

文件:1.34291 Mbytes Page:6 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

PNPTransistors

文件:1.22581 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

OldCompanyNameinCatalogsandOtherDocuments

文件:1.34291 Mbytes Page:6 Pages

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

PNPTransistors

文件:1.23801 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.25051 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.23801 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:1.25051 Mbytes Page:3 Pages

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

KEXIN

2SB111产品属性

  • 类型

    描述

  • 型号

    2SB111

  • 制造商

    HITACHI

  • 制造商全称

    Hitachi Semiconductor

  • 功能描述

    SILICON PNP EPITAXIAL(LOW FREQUENCY HIGH VOLTAGE AMPLIFIER)

更新时间:2024-3-28 19:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
20+
SOT-89
43000
原装优势主营型号-可开原型号增税票
NEC
2339+
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
NEC
21+
SOT89
3220
原装现货假一赔十
NEC
22+
SOT89
2987
只售原装自家现货!诚信经营!欢迎来电
NEC/Renesas Electronics Americ
21+
SOT89
3220
优势代理渠道,原装正品,可全系列订货开增值税票
SOT-89
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
22+23+
Sot-89
32941
绝对原装正品全新进口深圳现货
NEC
2023+
SOT-89
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
NEC
23+
SOT89
6000
原装正品假一罚百!可开增票!
NEC
2008++
SOT-89
77400
新进库存/原装

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