SILICON PNP EPITAXIAL (LOW FREQUENCY HIGH VOLTAGE AMPLIFIER)

COMPLEMENTARY PAIR 2SD1609 and 2SD1610 (NPN)

PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION 2SB1114 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES ● World Standard Miniature Package ● High DC Current Gain hFE = 135 to 600 ● Low VCE(sat). VCE(sat) = - 0.3 V at 1.5 A ● Complement to 2SD1614

PNP Silicon Epitaxial Transistor

■ Features ● High Dc current gain hFE=135 to 600 ● Low VCE(sat) VCE(sat)=-0.3V at 1.5A ● Complementary to 2SD1614

PNP Silicon General USE Transistors

PNP-Silicon General use Transistors 1W 、 1.5A、 25V Applications： Can be used for switching and amplifying in various electrical and electronic circuit.

World standard miniature package

FEATURES World Standard Miniature Package Low VCE(sat): VCE(sat) = -0.2V at 1 A

PNP Silicon Epitaxial Transistor

■ Features ● Low VCE(sat) VCE(sat)=-0.2V at 1A ● Complementary to 2SD1615

PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION 2SB1115, 2SB1115A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuit. FEATURES ● World Standard Miniature Package ● Low VCE(sat): VCE(sat) = -0.2 V at 1 A ● Complement to 2SD1615, 2SD1615A

PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION 2SB1115, 2SB1115A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuit. FEATURES ● World Standard Miniature Package ● Low VCE(sat): VCE(sat) = -0.2 V at 1 A ● Complement to 2SD1615, 2SD1615A

PNP Silicon Epitaxial Transistor

Features ● World standard miniature package. ● Low VCE(sat): VCE(sat)=-0.2V at 1A

PNP SILICON TRANSISTORS

DESCRIPTION The 2SB1116/2SB1116A are disigned for use in driver and output stages of AF amplifier, general purpose applications.

PNP EPITAXIAL SILICON TRANSISTOR

DESCRIPTION Complement to UTC 2SD1616/A

PNP General Purpose Transistor

PNP General Purpose Transistor P/b Lead(Pb)-Free

SOT-23 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • High Collector Power Dissipation. • Complementary to 2SD1616/2SD1616A

PNP Plastic Encapsulated Transistor

FEATURES • High current surface mount PNP silicon switching transistor for Load management in portable applications

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES • High Collector Power Dissipation . • Complementary to 2SD1616/2SD1616A

TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

SILICON TRANSISTORS

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor

TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES • High Collector Power Dissipation . • Complementary to 2SD1616/2SD1616A

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES • High Collector Power Dissipation. • Complementary to 2SD1616/2SD1616A

PNP General Purpose Transistor

PNP General Purpose Transistor P/b Lead(Pb)-Free

PNP SILICON TRANSISTORS

DESCRIPTION The 2SB1116/2SB1116A are disigned for use in driver and output stages of AF amplifier, general purpose applications.

PNP Plastic Encapsulated Transistor

FEATURES • High Collector Power Dissipation • Complementary to 2SD1616A

TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

PNP Plastic Encapsulated Transistor

FEATURES • High current surface mount PNP silicon switching transistor for Load management in portable applications

PNP Plastic Encapsulated Transistor

FEATURES • High current surface mount PNP silicon switching transistor for Load management in portable applications

TO-92 Plastic-Encapsulate Transistors

FEATURES High Collector Power Dissipation Complementary to 2SD1616/2SD1616A

Suitable for driver of solenoid or motor, or electronic flash

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

Low-Voltage, High-Current Amp, Muting Applications

Features · Low collector-to-emitter saturation voltage. · Very small size making it easy to provide high density, small-sized hybrid IC’s.

TRANSISTOR(PNP)

FEATURES ● Small Flat Package ● LF Amplifier, Electronic Governor Applications

PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 500mW˄ Tamb=25°C Collector current ICM : -1 A Collector-base voltage VB(BR)CBO : -25 V Operating and storage junction temperature range TJ,Tstg: -55ć to +150ć

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM: 500 mW (Tamb=25℃) Collector current ICM: -1 A Collector current (Pulse) ICP: -2 A Collector-base voltage V(BR)CBO: -25 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃

PNP Epitaxial Planar Silicon Transistors

Features ● Very small size making it easy to provide highdensity, small-sized hybrid IC’s.

LF Amp,Electronic Governor Applications

LF Amplifier, Electronic Governor Applications Features · Very small size making it easy to provide high density, small-sized hybrid IC’s.

PNP Epitaxial Planar Silicon Transistors

FEATURES ● Very small size making it easy to provide High-density,small-size hybrid IC’s.

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low collector-emitter saturation voltage VCE(sat) ● Satisfactory operation performances at high efficiency with the low voltage power supply.

Plastic-Encapsulate Transistors

FEATURES • Very small size making it easy to provide • High-density,small-size hybrid IC,S

Very small size making it easy to provide

FEATURES • Very small size making it easy to provide • High-density,small-size hybrid ICS

PNP Epitaxial Planar Silicon Transistor

Features Very small size making it easy to provide highdensity, small-sized hybrid IC’s.

isc Silicon PNP Darlingtion Power Transistor

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PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

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Old Company Name in Catalogs and Other Documents

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Old Company Name in Catalogs and Other Documents

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PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

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Old Company Name in Catalogs and Other Documents

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