SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • Mold package that does not require an insulating board or insulation bushing • Large current capacity in small dimension: IC(DC) = 7 A • Low collector saturation voltage: VCE(sat) = −0.5

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • Complement to type 2SD1588 APPLICATIONS • For low frequency power amplifier and low speed switching applications

Silicon PNP Power Transistor

DESCRIPTION • High Collector Current:: lc= -7A • Low Collector SaturationVoltage : VCE(sat)= -0.5V(Max)@lc= -5A • Complement to Type 2SD1588 APPLICATIONS • Designed for low-frequency power amplifiers and low speed switching applications.

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • Low collector saturation voltage • Complement to type 2SD1588 APPLICATIONS • For low frequency power amplifier and low speed switching applications

Silicon PNP Power Transistors

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