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2SB102晶体管资料

2SB102别名：2SB102三极管、2SB102晶体管、2SB102晶体三极管
2SB102生产厂家：日本日电公司
2SB102制作材料：Ge-PNP
2SB102性质：低频或音频放大（LF）_TR_输出极（E）
2SB102封装形式：直插封装
2SB102极限工作电压：30V
2SB102最大电流允许值：0.05A
2SB102最大工作频率：<1MHZ或未知
2SB102引脚数：3
2SB102最大耗散功率：0.18W
2SB102放大倍数：
2SB102图片代号：D-9
2SB102vtest：30
2SB102htest：999900
2SB102atest：0.05
2SB102wtest：0.18

2SB102代换 2SB102用什么型号代替：AC128K,AC153K,AC188K,2N1102,2N1102,2N1103,2N1104,3AX53B,

型号	功能描述	生产厂家企业	LOGO
2SB1020	Silicon PNP Power Transistors DESCRIPTION ·High DC C urrent Gain-: hFE= 2000(Min.)@IC= -3A ·Low Collector Saturation Voltage-: VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1415 APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications.	ISC 无锡固电	ISC
2SB1020	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1415 APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications	JMNIC 锦美电子	JMNIC
2SB1020	Silicon PNP Darlingtion Power Transistor DESCRIPTION • High DC C urrent Gain- : hFE= 2000(Min.)@lc=-3A • Low Collector Saturation Voltage- :VCE(sat)=-1.5V(Max)@lc=-3A • Good Linearity of hFE • Complement to Type 2SD1415 APPLICATIONS • High power switching applications. • Hammer drive, pulse motor drive applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1020	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1415 APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications	SAVANTIC	SAVANTIC
2SB1020A	TRANSISTOR (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE= 2000 (min) (VCE= −3 V, IC= −3 A) • Low saturation voltage: VCE (sat)= −1.5 V (max) (IC= −3 A) • Complementary to 2SD1415A	TOSHIBA 东芝	TOSHIBA
2SB1021	2SB1021 2SB1021	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SB1021	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1416 APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications	ISC 无锡固电	ISC
2SB1021	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1416 APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications	JMNIC 锦美电子	JMNIC
2SB1021	Silicon PNP Darlingtion Power Transistor DESCRIPTION • High DC C urrent Gain- : hFE= 2000(Min.)@lc=-3A • Low Collector SaturationVoltage- : VCE(sat)= -1.5V(Max)@lc= -3A • Good Linearity of hFE • Complement to Type 2SD1416 APPLICATIONS • High power switchingapplications. • Hammer drive, pulse motor drive applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1021	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1416 APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications	SAVANTIC	SAVANTIC
2SB1022	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1417 APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications	SAVANTIC	SAVANTIC
2SB1022	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1417 APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications	ISC 无锡固电	ISC
2SB1022	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1417 APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications	JMNIC 锦美电子	JMNIC
2SB1022	2SB1022	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SB1023	2SB1023 SILICON POWER PNP TRANSISTOR	TOSHIBA 东芝	TOSHIBA
2SB1023	Silicon PNP Power Transistors DESCRIPTION · With TO-220Fa package · High DC current gain · Low saturation voltage · Complement to type 2SD1413 APPLICATIONS · Power amplifier and switching applications · Hammer drive,pulse motor drive applications	JMNIC 锦美电子	JMNIC
2SB1023	Silicon PNP Power Transistors DESCRIPTION · With TO-220Fa package · High DC current gain · Low saturation voltage · Complement to type 2SD1413 APPLICATIONS · Power amplifier and switching applications · Hammer drive,pulse motor drive applications	ISC 无锡固电	ISC
2SB1023	Silicon PNP Power Transistors DESCRIPTION · With TO-220Fa package · High DC current gain · Low saturation voltage · Complement to type 2SD1413 APPLICATIONS · Power amplifier and switching applications · Hammer drive,pulse motor drive applications	SAVANTIC	SAVANTIC
2SB1024	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1414 APPLICATIONS • Power amplifier and switching applications • Hammer drive,pulse motor drive applications	SAVANTIC	SAVANTIC
2SB1024	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1414 APPLICATIONS • Power amplifier and switching applications • Hammer drive,pulse motor drive applications	JMNIC 锦美电子	JMNIC
2SB1024	isc Silicon PNP Darlington Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -3A • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A) • Complement to Type 2SD1414 APPLICATIONS • Designed for power amplifier applications.	ISC 无锡固电	ISC
2SB1024	2SB1024 2SB1024	TOSHIBA 东芝	TOSHIBA
2SB1024	Silicon PNP Darlington Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -3A • High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1A) • Complement to Type 2SD1414 APPLICATIONS • Designed for power amplifier applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1025	Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1418	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1025	Silicon PNP Epitaxial Features ● Low frequency power amplifier	KEXIN 科信电子	KEXIN
2SB1026	Silicon PNP Epitaxial Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD1419	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1026	Silicon PNP Epitaxial Silicon PNP Epitaxial Features Low frequency power amplifier	KEXIN 科信电子	KEXIN
2SB1027	Silicon PNP Epitaxial Application Low frequency amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1027	Silicon PNP Epitaxial Features ● Low frequency amplifier	KEXIN 科信电子	KEXIN
2SB1028	Silicon PNP Epitaxial Application Low frequency power amplifier	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1020	Silicon PNP Power Transistors 文件：130.43 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1020_15	Silicon PNP Power Transistors 文件：150.66 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1020_2014	Silicon PNP Power Transistors 文件：150.66 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1020A	Silicon PNP Triple Diffused Type (Darlington Power) 文件：152.66 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SB1020A	Power transistor for low frequency applications	TOSHIBA 东芝	TOSHIBA
2SB1020A_06	Silicon PNP Triple Diffused Type (Darlington Power) 文件：152.66 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SB1021	Silicon PNP Power Transistors 文件：130.509 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1021_15	Silicon PNP Power Transistors 文件：150.88 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1021_2014	Silicon PNP Power Transistors 文件：150.88 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1022	Silicon PNP Power Transistors 文件：136.01 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1022	Silicon PNP Darlingtion Power Transistor 文件：129.35 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1022_15	Silicon PNP Power Transistors 文件：148.76 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1022_2014	Silicon PNP Power Transistors 文件：148.76 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1023	Silicon PNP Darlingtion Power Transistor 文件：128.57 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1023	Silicon PNP Power Transistors 文件：129.58 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1023	2SB1023	TOSHIBA 东芝	TOSHIBA
2SB1023_15	Silicon PNP Power Transistors 文件：151.11 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1023_2014	Silicon PNP Power Transistors 文件：151.11 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1024	Silicon PNP Power Transistors 文件：130 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1024	2SB1024	TOSHIBA 东芝	TOSHIBA
2SB1024_15	Silicon PNP Power Transistors 文件：149.89 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1024_2014	Silicon PNP Power Transistors 文件：149.89 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
2SB1025	Silicon PNP Epitaxial 文件：66.61 Kbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
2SB1025_15	PNP Transistors 文件：953.25 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1025DJTL-E	Silicon PNP Epitaxial 文件：66.61 Kbytes Page：6 Pages	RENESAS 瑞萨	RENESAS
2SB1025-H	PNP Transistors 文件：953.25 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1025-HF_15	PNP Transistors 文件：966.92 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1025-H-HF	PNP Transistors 文件：966.92 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1025-J	PNP Transistors 文件：953.25 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SB1025-J-HF	PNP Transistors 文件：966.92 Kbytes Page：3 Pages	KEXIN 科信电子	KEXIN

2SB102产品属性

类型
描述
型号
2SB102
制造商
ISC
制造商全称
Inchange Semiconductor Company Limited
功能描述
Silicon PNP Power Transistors

2SB102供应商更多...

更新时间：2025-12-25 14:52:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市金华微盛电子有限公司	2SB1026DM90TL	HITACHI	19+	SOT-89	16808		询价
深圳市华斯顿科技有限公司	2SB1026/DM	Hitachi	25+23+	Sot-89	31599	绝对原装正品全新进口深圳现货	询价
贸泽芯城（深圳）电子科技有限公司	2SB1026DMTL	RENESAS/瑞萨	23+		6000	原厂授权代理,海外优势订货渠道。可提供大量库存,详	询价
深圳市赛美科科技有限公司	2SB1026DMTR-E	RENESAS		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市明嘉莱科技有限公司	2SB1026DMTR-E	RENESAS/瑞萨	24+	PBFREE	990000	明嘉莱只做原装正品现货	询价
深圳市佳鑫美电子科技有限公司	2SB1026	HITACHI	25+	SOT89	2987	只售原装自家现货!诚信经营!欢迎来电	询价
洪芯国际半导体（深圳）有限公司	2SB1026	HITACHI/日立	25+	原厂原封装	86720	全新原装进口现货价格优惠本公司承诺原装正品假一赔	询价
深圳市中飞凌科技有限公司	2SB1026DMTR-E	RENESAS	26+	SOT89	360000	进口原装现货	询价
深圳市宇创芯科技有限公司	2SB1026DMTR-E	RENESAS	24+	SOT89	16900	原装正品现货支持实单	询价
深圳市一线半导体有限公司	2SB1026DM90TL	HITACHI	24+	SOT-89	1000		询价

2SB102芯片相关品牌

2SB102规格书下载地址

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2SB102数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商
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2023-3-14
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2SA2198，全新原装当天发货或门市自取0755-82732291.
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2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

DdatasheetPDF页码索引

P1
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2SB102晶体管资料

2SB102产品属性

2SB102供应商更多...

2SB102芯片相关品牌

2SB102规格书下载地址

2SB102参数引脚图相关

2SB102数据表相关新闻

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2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

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2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引