位置:首页 > IC中文资料第11151页 > 2SB1020A
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1020A | TRANSISTOR (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS) High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE= 2000 (min) (VCE= −3 V, IC= −3 A) • Low saturation voltage: VCE (sat)= −1.5 V (max) (IC= −3 A) • Complementary to 2SD1415A | TOSHIBA 东芝 | ||
2SB1020A | Silicon PNP Triple Diffused Type (Darlington Power) 文件:152.66 Kbytes Page:5 Pages | TOSHIBA 东芝 | ||
2SB1020A | Power transistor for low frequency applications | TOSHIBA 东芝 | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1415 APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1415 APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors DESCRIPTION ·High DC C urrent Gain-: hFE= 2000(Min.)@IC= -3A ·Low Collector Saturation Voltage-: VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1415 APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications. | ISC 无锡固电 | |||
Silicon PNP Darlingtion Power Transistor DESCRIPTION • High DC C urrent Gain- : hFE= 2000(Min.)@lc=-3A • Low Collector Saturation Voltage- :VCE(sat)=-1.5V(Max)@lc=-3A • Good Linearity of hFE • Complement to Type 2SD1415 APPLICATIONS • High power switching applications. • Hammer drive, pulse motor drive applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Silicon PNP Power Transistors 文件:130.43 Kbytes Page:3 Pages | SAVANTIC | |||
Silicon PNP Triple Diffused Type (Darlington Power) 文件:152.66 Kbytes Page:5 Pages | TOSHIBA 东芝 |
2SB1020A产品属性
- 类型
描述
- 型号
2SB1020A
- 制造商
TOSHIBA
- 制造商全称
Toshiba Semiconductor
- 功能描述
TRANSISTOR(HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
24+ |
NA/ |
3080 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TOS |
23+ |
TO-22O |
4000 |
专做原装正品,假一罚百! |
|||
TOSHIBA |
1932+ |
TO-220F |
302 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOSHIBA |
24+ |
TO-22O |
7865 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
TOSHIBA |
25+ |
TO-220 |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
TOSHIBA/东芝 |
2023+ |
TO-220 |
40464 |
十五年行业诚信经营,专注全新正品 |
|||
PANASONIC |
24+ |
90000 |
|||||
TOSHIBA 光耦 集成电路 |
Original 元件 |
原厂原封 |
10050 |
TOSHIBA现货原装△-更多数量咨询样品批量支持;详询 |
|||
TOSHIBA/东芝 |
2447 |
TO-22O |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
TOSHIBA(东芝) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
2SB1020A规格书下载地址
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2SB1020A数据表相关新闻
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2SB1386-P :PNP硅外延晶体管的特点如下: ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息) ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
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