TRANSISTOR (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE= 2000 (min) (VCE= −3 V, IC= −3 A) • Low saturation voltage: VCE (sat)= −1.5 V (max) (IC= −3 A) • Complementary to 2SD1415A

Power transistor for low frequency applications

Feature：Darlington / Built-in damper diode\nPolarity：PNP\nComplementary Product：2SD1415A\nRoHS Compatible Product(s) (#)：Available Collector Current IC -7 A \nCollector-emitter voltage VCEO -100 V ;

Silicon PNP Triple Diffused Type (Darlington Power)

文件：152.66 Kbytes Page：5 Pages

Silicon PNP Triple Diffused Type (Darlington Power)

文件：152.66 Kbytes Page：5 Pages

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1415 APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • Low saturation voltage • Complement to type 2SD1415 APPLICATIONS • High power switching applications • Hammer drive,pulse motor drive applications

Silicon PNP Power Transistors

DESCRIPTION ·High DC C urrent Gain-: hFE= 2000(Min.)@IC= -3A ·Low Collector Saturation Voltage-: VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Complement to Type 2SD1415 APPLICATIONS ·High power switching applications. ·Hammer drive, pulse motor drive applications.