位置:首页 > IC中文资料第6754页 > 2SB101
2SB101晶体管资料
2SB101别名:2SB101三极管、2SB101晶体管、2SB101晶体三极管
2SB101生产厂家:日本日电公司
2SB101制作材料:Ge-PNP
2SB101性质:低频或音频放大 (LF)
2SB101封装形式:直插封装
2SB101极限工作电压:30V
2SB101最大电流允许值:0.05A
2SB101最大工作频率:<1MHZ或未知
2SB101引脚数:3
2SB101最大耗散功率:0.125W
2SB101放大倍数:
2SB101图片代号:D-9
2SB101vtest:30
2SB101htest:999900
- 2SB101atest:0.05
2SB101wtest:0.125
2SB101代换 2SB101用什么型号代替:AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX52B,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SiliconPNPtriplediffusionplanartype SiliconPNPtriplediffusionplanartype Forlow-frequencyoutputamplification ■Features •Highcollector-basevoltage(Emitteropen)VCBO •Highcollector-emittervoltage(Baseopen)VCEO •LargecollectorpowerdissipationPC •Lowcollector-emittersaturationvoltageVCE(sat) | PanasonicPanasonic Semiconductor 松下松下电器 | |||
SiliconPNPEpitaxial Application Lowfrequencypoweramplifiercomplementarypairwith2SD1376(K) | HitachiHitachi Semiconductor 日立日立公司 | |||
SiliconPNPEpitaxial Application Lowfrequencypoweramplifiercomplementarypairwith2SD1376(K) | HitachiHitachi Semiconductor 日立日立公司 | |||
TRANSISTOR(AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS) AudioFrequencyPowerAmplifierApplications •Lowcollectorsaturationvoltage:VCE(sat)=−1.7V(max) (IC=−3A,IB=−0.3A) •Collectorpowerdissipation:PC=25W(Tc=25°C) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Collectorpowerdissipation :PC=25W@TC=25℃ ·Lowcollectorsaturationvoltage ·Complementtotype2SD1406 APPLICATIONS ·Foraudiofrequencypoweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Collectorpowerdissipation :PC=25W@TC=25 ·Lowcollectorsaturationvoltage ·Complementtotype2SD1406 APPLICATIONS ·Foraudiofrequencypoweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Collectorpowerdissipation :PC=25W@TC=25℃ ·Lowcollectorsaturationvoltage ·Complementtotype2SD1406 APPLICATIONS ·Foraudiofrequencypoweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
TRANSISTOR(AUDIOFREQUENCYPOWERAMPLIFIERAPPLICATIONS) AudioFrequencyPowerAmplifierApplications •Lowcollectorsaturationvoltage:VCE(sat)=−1.7V(max) (IC=−3A,IB=−0.3A) •Collectorpowerdissipation:PC=25W(Tc=25°C) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fapackage •Highbreakdownvoltage •Lowcollectorsaturationvoltage •Complementtotype2SD1407 APPLICATIONS •Poweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PNPEPITAXIALSILICONTRANSISTOR(POWERAMPLIFIERVERTICALDEFLECTIONOUTPUT) POWERAMPLIFIERVERTICALDEFLECTIONOUTPUT ●Complementto2SD1407 | WINGSWing Shing Computer Components 永盛电子永盛电子(香港)有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fapackage •Highbreakdownvoltage •Lowcollectorsaturationvoltage •Complementtotype2SD1407 APPLICATIONS •Poweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage-:VCE(satr-2.0V(Max)@lc=-4A •GoodLinearityofhFE •ComplementtoType2SD1407 APPLICATIONS •Designedforaudiofrequencypoweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
TRANSISTOR(POWERAMPLIFIERAPPLICATIONS) PowerAmplifierApplications •Highbreakdownvoltage:VCEO=−100V •Lowcollector-emittersaturationvoltage:VCE(sat)=−2.0V(max) •Complementaryto2SD1407A | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Complementtotype2SD1408 APPLICATIONS ·Forpoweramplifications ·Recommendedfor20-25Whigh-fidelityaudiofrequencyamplifieroutputstage | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Complementtotype2SD1408 APPLICATIONS ·Forpoweramplifications ·Recommendedfor20-25Whigh-fidelityaudiofrequencyamplifieroutputstage | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Complementtotype2SD1408 APPLICATIONS ·Forpoweramplifications ·Recommendedfor20-25Whigh-fidelityaudiofrequencyamplifieroutputstage | SAVANTIC Savantic, Inc. | |||
2SB1017 SiliconPNPPowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SiliconPNPPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=-1.7V(Max)@IC=-3A •GoodLinearityofhFE •ComplementtoType2SD1408 APPLICATIONS •Designedforpoweramplifierapplications. •Recommendedfor20~25Whigh-fidelityaudiofrequencyamplifieroutputstage. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
PNPSILICONEPITAXIALTRANSISTOR DESCRIPTION TheUTC2SB1017isaPNPsiliconepitaxialtransistorsuitedtobeusedinpoweramplifierapplications. FEATURES *Lowbasedrive | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PNPSILICONEPITAXIALTRANSISTOR DESCRIPTION TheUTC2SB1017isaPNPsiliconepitaxialtransistorsuitedtobeusedinpoweramplifierapplications. FEATURES *Lowbasedrive | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PNPSILICONEPITAXIALTRANSISTOR DESCRIPTION TheUTC2SB1017isaPNPsiliconepitaxialtransistorsuitedtobeusedinpoweramplifierapplications. FEATURES *Lowbasedrive | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fapackage •Lowsaturationvoltage •Complementtotype2SD1411 APPLICATIONS •Highcurrentswitchingapplications •Poweramplifierapplications | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •Highcollectorcurrent •Lowcollectorsaturationvoltage •Complementtotype2SD1411 APPLICATIONS •Poweramplifierapplications •Highcurrentswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fapackage •Lowsaturationvoltage •Complementtotype2SD1411 APPLICATIONS •Highcurrentswitchingapplications •Poweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
iscSiliconPNPPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max)@IC=-4A •HighCurrentCapability-IC=-7A •ComplementtoType2SD1411A APPLICATIONS •Highcurrentswitchingapplications. •Poweramplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconPNPPowerTransistor DESCRIPTION •LowCollectorSaturationVoltage-:VCE(sat)=-0.5V(Max)@IC=-4A •HighCurrentCapability-IC=-7A •ComplementtoType2SD1411A APPLICATIONS •Highcurrentswitchingapplications. •Poweramplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors DESCRIPTION •WithTO-220Fpackage •Highcollectorcurrent •Lowcollectorsaturationvoltage •Complementtotype2SD1411A APPLICATIONS •Poweramplifierapplications •Highcurrentswitchingapplications | SAVANTIC Savantic, Inc. | |||
TRANSISTOR(HIGHCURRENTSWITCHING,POWERAMPLIFIERAPPLICATIONS) HighCurrentSwitchingApplications PowerAmplifierApplications •Highcollectorcurrent:IC=−7A •Lowcollectorsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−4A) •Complementaryto2SD1411A | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconPNPPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Lowsaturationvoltage ·Complementtotype2SD1412 APPLICATIONS ·Highcurrentswitchingapplications ·Poweramplifierapplications | SAVANTIC Savantic, Inc. | |||
2SB1019 SiliconPNPPowerTransistors | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
SiliconPNPPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Lowsaturationvoltage ·Complementtotype2SD1412 APPLICATIONS ·Highcurrentswitchingapplications ·Poweramplifierapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-220Fapackage ·Lowsaturationvoltage ·Complementtotype2SD1412 APPLICATIONS ·Highcurrentswitchingapplications ·Poweramplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
1.2WPACKAGEPOWERTAPEDTRANSISTORDESIGNEDFORUSEWITHANAUTOMATICPLACEMENTMECHINE 文件:88.13 Kbytes Page:2 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
TRANSISTORSTO92LTO-92LSMRT 文件:195.39 Kbytes Page:2 Pages | ROHMRohm 罗姆罗姆半导体集团 | |||
封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS PNP 400V 0.1A TO126B-A1 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | PanasonicElectronicComponents Panasonic Electronic Components | |||
SiliconPNPPowerTransistor 文件:129.85 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:164.5 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:210.08 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:210.08 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:163.44 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:218.74 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:218.74 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:218.74 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
PowerAmplifierApplications 文件:131.51 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
PowerAmplifierApplications 文件:131.51 Kbytes Page:4 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconPNPPowerTransistors 文件:160.46 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:214.16 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
PNPSILICONEPITAXIALTRANSISTOR 文件:69.26 Kbytes Page:2 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconPNPPowerTransistors 文件:214.16 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
PNPSILICONEPITAXIALTRANSISTOR 文件:69.26 Kbytes Page:2 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PNPSILICONEPITAXIALTRANSISTOR 文件:69.26 Kbytes Page:2 Pages | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SiliconPNPPowerTransistors 文件:135.36 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:214.11 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconPNPPowerTransistors 文件:214.11 Kbytes Page:4 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | |||
SiliconNPNTripleDiffusedType(PCTProcess) 文件:170.78 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconPNPPowerTransistors 文件:267.21 Kbytes Page:4 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNTripleDiffusedType(PCTProcess) 文件:170.78 Kbytes Page:5 Pages | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | |||
SiliconPNPPowerTransistor 文件:129.52 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconPNPPowerTransistors 文件:134.92 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconPNPPowerTransistors 文件:162.36 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 |
2SB101产品属性
- 类型
描述
- 型号
2SB101
- 制造商
ROHM
- 制造商全称
Rohm
- 功能描述
TRANSISTORS TO 92L TO-92LS MRT
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
24+ |
TO220FA |
10000 |
全新 |
||||
SANYO |
21+ |
TO-220F |
12588 |
原装正品,自己库存 假一罚十 |
|||
TOSHIBA/东芝 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
TOSHIBA/东芝 |
23+ |
8 |
6500 |
专注配单,只做原装进口现货 |
|||
TOSHIBA/东芝 |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
SANYO/三洋 |
22+ |
TO-220F |
25000 |
只做原装进口现货,专注配单 |
|||
TOS |
1738+ |
TO-220F |
8529 |
科恒伟业!只做原装正品,假一赔十! |
|||
TOSHIBA |
24+ |
NA |
30617 |
一级代理全新原装热卖 |
|||
TOSHIBA/东芝 |
24+ |
NA/ |
43 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
TOSHIBA |
02+ |
TO220F |
500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
2SB101规格书下载地址
2SB101参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽车
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2SB1032
- 2SB1031
- 2SB1030
- 2SB1028
- 2SB1027
- 2SB1026
- 2SB1025
- 2SB1024
- 2SB1023
- 2SB1022
- 2SB1021
- 2SB1020
- 2SB102
- 2SB1019
- 2SB1018
- 2SB1017
- 2SB1016
- 2SB1015
- 2SB1014
- 2SB1013
- 2SB1012
- 2SB1011
- 2SB1010
- 2SB1009
- 2SB1008
- 2SB1007
- 2SB1005
- 2SB1004
- 2SB1003
- 2SB1002
- 2SB1001
- 2SB1000A
- 2SB1000
- 2SB100
- 2SB0976
- 2SB0970
- 2SB0968
- 2SB0956
- 2SB0953
- 2SB0952
- 2SB0951
- 2SB0950
- 2SB0949
- 2SB0948
- 2SB0947
- 2SB0946
- 2SB0945
- 2SB0944
- 2SA999L
- 2SA999
- 2SA998
- 2SA997
- 2SA995
- 2SA994
- 2SA993
- 2SA992
- 2SA991
2SB101数据表相关新闻
2SB562L-TO92NLK-B-TG_UTC代理商
2SB562L-TO92NLK-B-TG_UTC代理商
2023-3-142SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-12SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SB649 MOS
www.jskj-ic.com
2021-9-102SA2198
2SA2198,全新原装当天发货或门市自取0755-82732291.
2020-4-242SB1386-P-PNP硅外延晶体管
2SB1386-P:PNP硅外延晶体管的特点如下:·低集电极饱和电压·Execllent电流增益特性·无铅完成/符合RoHS(“P”字后缀指定符合RoHS标准。见订购信息)·环氧符合UL94V-0阻燃等级·Moisure敏感度等级12SB1386-P/2SB1386-Q/2SB1386-R是微型商业组件公司的产品型号
2012-11-9
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98