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2SB101晶体管资料

2SB101别名：2SB101三极管、2SB101晶体管、2SB101晶体三极管
2SB101生产厂家：日本日电公司
2SB101制作材料：Ge-PNP
2SB101性质：低频或音频放大（LF）
2SB101封装形式：直插封装
2SB101极限工作电压：30V
2SB101最大电流允许值：0.05A
2SB101最大工作频率：<1MHZ或未知
2SB101引脚数：3
2SB101最大耗散功率：0.125W
2SB101放大倍数：
2SB101图片代号：D-9
2SB101vtest：30
2SB101htest：999900
2SB101atest：0.05
2SB101wtest：0.125

2SB101代换 2SB101用什么型号代替：AC122,AC125,AC126,AC151,2N1191,2N1192,2N1193,2N1194,2SB54,2SB56,3AX52B,

型号	功能描述	生产厂家企业	LOGO
2SB1011	Silicon PNP triple diffusion planar type Silicon PNP triple diffusion planar type For low-frequency output amplification ■ Features • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat)	Panasonic 松下	Panasonic
2SB1012	Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K)	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1012K	Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD1376(K)	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1015	TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) Audio Frequency Power Amplifier Applications • Low collector saturation voltage: VCE (sat)= −1.7 V (max) (IC= −3 A, IB= −0.3 A) • Collector power dissipation: PC= 25 W (Tc = 25°C)	TOSHIBA 东芝	TOSHIBA
2SB1015	Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25 ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1015	Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25℃ ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications	ISC 无锡固电	ISC
2SB1015	Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Collector power dissipation :PC=25W@TC=25℃ ·Low collector saturation voltage ·Complement to type 2SD1406 APPLICATIONS ·For audio frequency power amplifier applications	SAVANTIC	SAVANTIC
2SB1015A	TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) Audio Frequency Power Amplifier Applications • Low collector saturation voltage: VCE (sat)= −1.7 V (max) (IC= −3 A, IB= −0.3 A) • Collector power dissipation: PC= 25 W (Tc = 25°C)	TOSHIBA 东芝	TOSHIBA
2SB1016	PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT ● Complement to 2SD1407	WINGS 永盛电子	WINGS
2SB1016	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High breakdown voltage • Low collector saturation voltage • Complement to type 2SD1407 APPLICATIONS • Power amplifier applications	SAVANTIC	SAVANTIC
2SB1016	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • High breakdown voltage • Low collector saturation voltage • Complement to type 2SD1407 APPLICATIONS • Power amplifier applications	ISC 无锡固电	ISC
2SB1016	Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(satr -2.0V(Max)@lc= -4A • Good Linearity of hFE • Complement to Type 2SD1407 APPLICATIONS • Designed for audio frequency power amplifier applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1016A	TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2.0 V (max) • Complementary to 2SD1407A	TOSHIBA 东芝	TOSHIBA
2SB1017	Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1408 APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage	JMNIC 锦美电子	JMNIC
2SB1017	Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1408 APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage	ISC 无锡固电	ISC
2SB1017	PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive	UTC 友顺	UTC
2SB1017	2SB1017 Silicon PNP Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SB1017	Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- : VCE(sat)= -1.7V(Max)@IC= -3A • Good Linearity of hFE • Complement to Type 2SD1408 APPLICATIONS • Designed for power amplifier applications. • Recommended for 20~25W high-fidelity audio frequency amplifier output stage.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1017	Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SD1408 APPLICATIONS ·For power amplifications ·Recommended for 20-25W high-fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SB1017G-X-TF3-T	PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive	UTC 友顺	UTC
2SB1017L-X-TF3-T	PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SB1017 is a PNP silicon epitaxial transistor suited to be used in power amplifier applications. FEATURES * Low base drive	UTC 友顺	UTC
2SB1018	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • High collector current • Low collector saturation voltage • Complement to type 2SD1411 APPLICATIONS • Power amplifier applications • High current switching applications	ISC 无锡固电	ISC
2SB1018	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low saturation voltage • Complement to type 2SD1411 APPLICATIONS • High current switching applications • Power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1018	Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low saturation voltage • Complement to type 2SD1411 APPLICATIONS • High current switching applications • Power amplifier applications	SAVANTIC	SAVANTIC
2SB1018A	Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage-: VCE(sat)= -0.5V(Max)@IC= -4A • High Current Capability- IC= -7A • Complement to Type 2SD1411A APPLICATIONS • High current switching applications. • Power amplifier applications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1018A	Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • High collector current • Low collector saturation voltage • Complement to type 2SD1411A APPLICATIONS • Power amplifier applications • High current switching applications	SAVANTIC	SAVANTIC
2SB1018A	isc Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage-: VCE(sat)= -0.5V(Max)@IC= -4A • High Current Capability- IC= -7A • Complement to Type 2SD1411A APPLICATIONS • High current switching applications. • Power amplifier applications.	ISC 无锡固电	ISC
2SB1018A	TRANSISTOR (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS) High Current Switching Applications Power Amplifier Applications • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A) • Complementary to 2SD1411A	TOSHIBA 东芝	TOSHIBA
2SB1019	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications	ISC 无锡固电	ISC
2SB1019	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications	JMNIC 锦美电子	JMNIC
2SB1019	2SB1019 Silicon PNP Power Transistors	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
2SB1019	Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS ·High current switching applications ·Power amplifier applications	SAVANTIC	SAVANTIC
2SB1010	TRANSISTORS TO 92L TO-92LS MRT 文件：195.39 Kbytes Page：2 Pages	ROHM 罗姆	ROHM
2SB1010	1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE 文件：88.13 Kbytes Page：2 Pages	ROHM 罗姆	ROHM
2SB1011	封装/外壳：TO-225AA，TO-126-3 包装：散装描述：TRANS PNP 400V 0.1A TO126B-A1 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	Panasonic 松下	Panasonic
2SB1012	Silicon PNP Epitaxial	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1012(K)	Silicon PNP Darlington Transistor	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SB1015	Silicon PNP Power Transistors 文件：164.5 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
2SB1015	Silicon PNP Power Transistor 文件：129.85 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SB1015_15	Silicon PNP Power Transistors 文件：210.08 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1015_2014	Silicon PNP Power Transistors 文件：210.08 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1016	Silicon PNP Power Transistors 文件：163.44 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
2SB1016	PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT)	WINGS 永盛电子	WINGS
2SB1016	Silicon PNP Power Transistors 文件：218.74 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1016_15	Silicon PNP Power Transistors 文件：218.74 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1016_2014	Silicon PNP Power Transistors 文件：218.74 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1016A	Power Amplifier Applications 文件：131.51 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SB1016A_07	Power Amplifier Applications 文件：131.51 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SB1017	Silicon PNP Power Transistors 文件：160.46 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
2SB1017_15	Silicon PNP Power Transistors 文件：214.16 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1017_15	PNP SILICON EPITAXIAL TRANSISTOR 文件：69.26 Kbytes Page：2 Pages	UTC 友顺	UTC
2SB1017_2014	Silicon PNP Power Transistors 文件：214.16 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1017G-X-TF3-T	PNP SILICON EPITAXIAL TRANSISTOR 文件：69.26 Kbytes Page：2 Pages	UTC 友顺	UTC
2SB1017L-X-TF3-T	PNP SILICON EPITAXIAL TRANSISTOR 文件：69.26 Kbytes Page：2 Pages	UTC 友顺	UTC
2SB1018	Silicon PNP Power Transistors 文件：135.36 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
2SB1018_15	Silicon PNP Power Transistors 文件：214.11 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1018_2014	Silicon PNP Power Transistors 文件：214.11 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SB1018A	Silicon PNP Power Transistors 文件：267.21 Kbytes Page：4 Pages	SAVANTIC	SAVANTIC
2SB1018A	High-Current Switching Applications Power Amplifier Applications 文件：143.03 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SB1018A	Silicon NPN Triple Diffused Type (PCT Process) 文件：170.78 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA

2SB101产品属性

类型
描述
型号
2SB101
制造商
ROHM
制造商全称
Rohm
功能描述
TRANSISTORS TO 92L TO-92LS MRT

2SB101供应商更多...

更新时间：2025-12-25 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	2SB1013TP-3	SANYO/三洋	25+	TO92	54648	百分百原装现货实单必成欢迎询价	询价
深圳市得捷芯城科技有限公司	2SB1015	TOSHIBA/东芝	24+	NA/	313	优势代理渠道,原装正品,可全系列订货开增值税票	询价
千层芯半导体(深圳)有限公司	2SB1015A	TOSHIBA	24+	NA	30617	一级代理全新原装热卖	询价
深圳市科达星科技有限公司	2SB1013	ROHM	24+	SOT-89	96000	公司大量原装现货,欢迎来电	询价
深圳市赛美科科技有限公司	2SB1014	SANYO		TO-92	8553	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市昌和盛利电子有限公司	2SB1013	ROHM	NEW	SOT-89	11092	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市明嘉莱科技有限公司	2SB1013-4	SANYO/三洋	25+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市凯睿晟科技有限公司	2SB1013-GR	TOSHIBA/东芝	21+		20000	百域芯优势实单必成可开13点增值税	询价
深圳市振宏微科技有限公司	2SB1013,HZS6C1LTD,UDZSFTE-1712B	SOT-89	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市科恒伟业电子有限公司	2SB1013	ROHM/罗姆	2450+	SOT89	8850	只做原装正品假一赔十为客户做到零风险!!	询价

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2023-3-14
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2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-24
2SB1386-P-PNP硅外延晶体管
2SB1386-P :PNP硅外延晶体管的特点如下： ·低集电极饱和电压 ·Execllent电流增益特性 ·无铅完成/符合RoHS（“P”字后缀指定符合RoHS标准。见订购信息） ·环氧符合UL 94V -0阻燃等级 · Moisure敏感度等级1 2SB1386-P/2SB1386-Q/2SB1386-R 是微型商业组件公司的产品型号
2012-11-9

DdatasheetPDF页码索引

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2SB101晶体管资料

2SB101产品属性

2SB101供应商更多...

2SB101芯片相关品牌

2SB101规格书下载地址

2SB101参数引脚图相关

2SB101数据表相关新闻

2SB562L-TO92NLK-B-TG_UTC代理商

2SA928AL-TO92NLB-Y-TG

2SA812-T1B-A/S6 原装正品现货

2SB649 MOS

2SA2198

2SB1386-P-PNP硅外延晶体管

DdatasheetPDF页码索引