| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2SB1018A | TRANSISTOR (HIGH CURRENT SWITCHING, POWER AMPLIFIER APPLICATIONS) High Current Switching Applications Power Amplifier Applications • High collector current: IC = −7 A • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A) • Complementary to 2SD1411A | TOSHIBA 东芝 |   | |
2SB1018A | isc Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage-: VCE(sat)= -0.5V(Max)@IC= -4A • High Current Capability- IC= -7A • Complement to Type 2SD1411A APPLICATIONS • High current switching applications. • Power amplifier applications. | ISC 无锡固电 | | |
2SB1018A | Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • High collector current • Low collector saturation voltage • Complement to type 2SD1411A APPLICATIONS • Power amplifier applications • High current switching applications | SAVANTIC | | |
2SB1018A | Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage-: VCE(sat)= -0.5V(Max)@IC= -4A • High Current Capability- IC= -7A • Complement to Type 2SD1411A APPLICATIONS • High current switching applications. • Power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2SB1018A | Silicon PNP Power Transistors 文件：267.21 Kbytes Page：4 Pages | SAVANTIC | | |
2SB1018A | High-Current Switching Applications Power Amplifier Applications 文件：143.03 Kbytes Page：5 Pages | TOSHIBA 东芝 | | |
2SB1018A | Trans GP BJT NPN 80V 7A 3-Pin(3+Tab) TO-220NIS | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2SB1018A | Silicon NPN Triple Diffused Type (PCT Process) 文件：170.78 Kbytes Page：5 Pages | TOSHIBA 东芝 | | |
Silicon NPN Triple Diffused Type (PCT Process) 文件：170.78 Kbytes Page：5 Pages | TOSHIBA 东芝 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low saturation voltage • Complement to type 2SD1411 APPLICATIONS • High current switching applications • Power amplifier applications | SAVANTIC | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220Fa package • Low saturation voltage • Complement to type 2SD1411 APPLICATIONS • High current switching applications • Power amplifier applications | JMNIC 锦美电子 | | ||
Silicon PNP Power Transistors DESCRIPTION • With TO-220F package • High collector current • Low collector saturation voltage • Complement to type 2SD1411 APPLICATIONS • Power amplifier applications • High current switching applications | ISC 无锡固电 | |
2SB1018A产品属性
- 类型
描述
- Maximum Transition Frequency：
10(Typ)MHz
- Maximum Power Dissipation：
2000mW
- Maximum Operating Temperature：
150°C
- Maximum Emitter Base Voltage：
5V
- Maximum DC Collector Current：
7A
- Maximum Collector Emitter Voltage：
80V
- Maximum Collector Emitter Saturation Voltage：
0.5@0.4A@4AV
- Maximum Collector Base Voltage：
100V
- Material：
Si
- Configuration：
Single
- Category：
Bipolar Power
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
24+/25+ |
32 |
原装正品现货库存价优 |
||||
TOSHIBA/东芝 |
2540+ |
TO-220IS |
8595 |
只做原装正品假一赔十为客户做到零风险!! |
|||
TOS |
26+ |
TO-220F |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
NEC |
24+ |
CAN3 |
4231 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
ST |
25+ |
CAN to-39 |
20000 |
原装，请咨询 |
|||
ST |
23+ |
CAN to-39 |
16900 |
正规渠道,只有原装! |
|||
ST |
26+ |
CAN to-39 |
60000 |
只有原装 可配单 |
|||
TOS |
23+ |
TO-220F |
8000 |
专做原装正品,假一罚百! |
|||
PANASONIC |
24+ |
90000 |
|||||
TOSHIBA |
14+ |
TO-220F |
502 |
全新 发货1-2天 |
2SB1018A芯片相关品牌
2SB1018A规格书下载地址
2SB1018A参数引脚图相关
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2012-11-9
DdatasheetPDF页码索引
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