Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ : 150℃

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES • Excellent hFE linearlity

isc Silicon PNP Power Transistor

DESCRIPTION • Low Saturation Voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for high-speed switching and Amplifier applications.

PNP Plastic Encapsulated Transistor

FEATURES ● Excellent hFE Linearity

TO-92 Plastic-Encapsulate Transistors

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Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features Excellent hFE linearity,1 watt amplifier application, complementary pair with2SC1959.. Applications Audio frequency low power amplifier, driver stage amplifier, switching applications.

TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • 1 watt amplifier application. • Complementary to 2SC1959.

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

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COLOR TELEVISION N1PS Chassis

文件：2.69679 Mbytes Page：54 Pages

COLOR TELEVISION

文件：2.69679 Mbytes Page：54 Pages

COLOUR TELEVISION C9PJ Chassis

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双极晶体管

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

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