Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ : 150℃

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES • Excellent hFE linearlity

isc Silicon PNP Power Transistor

DESCRIPTION • Low Saturation Voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for high-speed switching and Amplifier applications.

TRANSISTOR (PNP)

FEATURE Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V(BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ : 150℃

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent hFE Linearlity

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent hFE inearlity

丝印代码：A562Z；TO-92 Plastic-Encapsulate Transistors

Features Excellent hFE inearlity

PNP Plastic Encapsulated Transistor

FEATURES ● Excellent hFE Linearity

TO-92 Plastic-Encapsulate Transistors

文件：1.01598 Mbytes Page：2 Pages

晶体管

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package Features Excellent hFE linearity, complementary pair with 2SC1959M. Applications Audio frequency low power amplifier, driver stage amplifier, switching applications.

PNP Silicon Transistors

Features • Excellent hFE) Linearlity • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information)

丝印代码：A562Z；TO-92 Plastic-Encapsulate Transistors

Features Excellent hFE inearlity

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features Excellent hFE linearity,1 watt amplifier application, complementary pair with2SC1959.. Applications Audio frequency low power amplifier, driver stage amplifier, switching applications.

TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • 1 watt amplifier application. • Complementary to 2SC1959.

PNP Silicon Transistors

Features • Excellent hFE) Linearlity • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information)

PNP Plastic Encapsulated Transistor

文件：212.15 Kbytes Page：2 Pages

COLOR TELEVISION N1PS Chassis

文件：2.69679 Mbytes Page：54 Pages

COLOR TELEVISION

文件：2.69679 Mbytes Page：54 Pages

COLOUR TELEVISION C9PJ Chassis

文件：6.49885 Mbytes Page：126 Pages

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

文件：315.86 Kbytes Page：3 Pages

双极晶体管

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

文件：315.86 Kbytes Page：3 Pages

三极管

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS PNP 30V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS PNP 30V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.