PNP SILICON TRANSISTOR

PNP SILICON TRANSISTOR 2SA561 is PNP silicon, planar transistor designed for low power general purpose amplifiers.

PNP Plastic Encapsulated Transistor

FEATURES ● Excellent hFE Linearity

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent hFE Linearlity

isc Silicon PNP Power Transistor

DESCRIPTION • Low Saturation Voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for high-speed switching and Amplifier applications.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent hFE inearlity

丝印代码：A562Z；TO-92 Plastic-Encapsulate Transistors

Features Excellent hFE inearlity

TRANSISTOR (PNP)

FEATURE Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V(BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ : 150℃

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES • Excellent hFE linearlity

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ : 150℃

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package Features Excellent hFE linearity, complementary pair with 2SC1959M. Applications Audio frequency low power amplifier, driver stage amplifier, switching applications.

PNP Silicon Transistors

Features • Excellent hFE) Linearlity • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information)

丝印代码：A562Z；TO-92 Plastic-Encapsulate Transistors

Features Excellent hFE inearlity

TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • 1 watt amplifier application. • Complementary to 2SC1959.

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features Excellent hFE linearity,1 watt amplifier application, complementary pair with2SC1959.. Applications Audio frequency low power amplifier, driver stage amplifier, switching applications.

PNP Silicon Transistors

Features • Excellent hFE) Linearlity • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information)

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High hFE. Applications General amplifier application.

Silicon PNP transistor in a TO-92 Plastic Package

Descriptions Silicon PNP transistor in a TO-92 Plastic Package. Features High hFE. Applications General amplifier application.

晶体管

TO-92 Plastic-Encapsulate Transistors

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PNP Plastic Encapsulated Transistor

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中等功率双极型晶体管

双极晶体管

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

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COLOR TELEVISION N1PS Chassis

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COLOR TELEVISION

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COLOUR TELEVISION C9PJ Chassis

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Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

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封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS PNP 30V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS PNP 30V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SILICON PNP EPITAXIAL

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