PNP Silicon Transistors

Features • Excellent hFE) Linearlity • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information)

中等功率双极型晶体管

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS PNP 30V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS PNP 30V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ : 150℃

丝印代码：A562Z；TO-92 Plastic-Encapsulate Transistors

Features Excellent hFE inearlity

TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • 1 watt amplifier application. • Complementary to 2SC1959.

Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications

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PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.