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位置：首页 > IC中文资料 > 2SA212

2SA212晶体管资料

  • 2SA212(H)别名：2SA212(H)三极管、2SA212(H)晶体管、2SA212(H)晶体三极管

  • 2SA212(H)生产厂家：日本日立公司

  • 2SA212(H)制作材料：Ge-PNP

  • 2SA212(H)性质：开关管 （S）

  • 2SA212(H)封装形式：直插封装

  • 2SA212(H)极限工作电压：25V

  • 2SA212(H)最大电流允许值：0.1A

  • 2SA212(H)最大工作频率：>4MHZ

  • 2SA212(H)引脚数：3

  • 2SA212(H)最大耗散功率：0.12W

  • 2SA212(H)放大倍数：

  • 2SA212(H)图片代号：C-78

  • 2SA212(H)vtest：25

  • 2SA212(H)htest：4000100

  • 2SA212(H)atest：0.1

  • 2SA212(H)wtest：0.12

  • 2SA212(H)代换 2SA212(H)用什么型号代替：ASY26,ASY27,ASY48,

2SA212价格

参考价格：￥0.6185

型号：2SA2124-TD-E 品牌：ON 备注：这里有2SA212多少钱，2026年最近7天走势，今日出价，今日竞价，2SA212批发/采购报价，2SA212行情走势销售排行榜，2SA212报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SA2120

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SA2121

Power transistor for high-speed switching applications

Application Scope：Audio amplifier output stage 140-W\nPolarity：PNP\nComplementary Product：2SC5949\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -15 A \nCollector power dissipation PC 220 W \nCollector-Base Voltage VCBO -200 V \nCollector-emitter voltage VCEO -200 V ;

TOSHIBA

东芝

2SA2121

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SA2124

Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP

Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity • High-speed switching Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

2SA2124

High-Current Switching Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity • High-speed switching Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

SANYO

三洋

2SA2124-TD-E

Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP

Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity • High-speed switching Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

2SA2125

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, mo

ONSEMI

安森美半导体

2SA2125

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

SANYO

三洋

2SA2125-TD-E

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, mo

ONSEMI

安森美半导体

2SA2125-TD-H

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, mo

ONSEMI

安森美半导体

2SA2126

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

2SA2126

PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers.

SANYO

三洋

2SA2126

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • DC/DC converter,relay drivers,lamp drivers,motor drivers

ISC

无锡固电

2SA2126

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

2SA2126

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

2SA2126-251

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

2SA2126-252

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

2SA2126-E

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

2SA2126-H

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

2SA2126-TL-E

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

2SA2126-TL-H

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

2SA2127

High-Current Switching Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process. • Low saturation voltage. • High current capacity and wide ASO. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.

SANYO

三洋

2SA2127

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP Features • Adoption of MBIT process • Low saturation voltage • High current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

2SA2127-AE

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP Features • Adoption of MBIT process • Low saturation voltage • High current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

2SA2120

Power Amplifier Applications

文件：153.37 Kbytes Page：5 Pages

TOSHIBA

东芝

2SA2120

音频功放晶体管

THUNDERSOFT

中科创达

2SA2120

isc Silicon PNP Power Transistor

文件：276.66 Kbytes Page：2 Pages

ISC

无锡固电

2SA2121

High Current Capability

文件：114.57 Kbytes Page：2 Pages

ISC

无锡固电

2SA2121

Silicon PNP Power Transistor

文件：74.29 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA2121

音频功放晶体管

THUNDERSOFT

中科创达

2SA2121

Power Amplifier Applications

文件：133.25 Kbytes Page：4 Pages

TOSHIBA

东芝

2SA2124

High-Current Switching Applications

文件：97.05 Kbytes Page：4 Pages

SANYO

三洋

2SA2124

High-Current Switching Applications

文件：423.56 Kbytes Page：7 Pages

SANYO

三洋

2SA2124_09

High-Current Switching Applications

文件：97.05 Kbytes Page：4 Pages

SANYO

三洋

2SA2124_12

High-Current Switching Applications

文件：423.56 Kbytes Page：7 Pages

SANYO

三洋

2SA2124-TD-E

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 30V 2A PCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

2SA2125

DC / DC Converter Applications

文件：473.05 Kbytes Page：8 Pages

SANYO

三洋

2SA2125_12

DC / DC Converter Applications

文件：473.05 Kbytes Page：8 Pages

SANYO

三洋

2SA2125-S-TD-E

封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 50V 3A PCP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

2SA2127

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

文件：36.7 Kbytes Page：4 Pages

SEME-LAB

2SA212产品属性

  • 类型

    描述

  • Polarity：

    PNP

  • Features：

    Power Amps Output Stage

  • VCEO(Max)(V)：

    -200

  • IC(Max)(A)：

    -12

  • hFE(Min)：

    55

  • hFE(Max)：

    160

  • VCE(sat)(Max)(V)：

    -3.0

  • fT(Typ.)(MHz)：

    25

  • ComplementaryProduct：

    2SC5948

  • Comments：

    Rank is specified by hFE range.

  • Number of pins：

    3

  • Surface mount package：

    N

  • Package name：

    TO-3P(N)

  • Width×Length×Height(mm)：

    15.5 x 20.0 x 4.5

2SA212供应商更多...

更新时间：2026-5-24 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市明嘉莱科技有限公司
2SA2124-TD-E
ONSEMI/安森美
25+
SOT-89
880000
明嘉莱只做原装正品现货
询价
深圳市华斯顿科技有限公司
2SA2124-TD-E
ON
25+23+
SOT-89
17033
绝对原装正品全新进口深圳现货
询价
深圳市恒凯威科技开发有限公司
2SA2124-TD-E
ON/安森美
21+
NA
12820
只做原装,质量保证
询价
深圳市坤融电子科技有限公司
2SA2124-TD-E
ON/安森美
2025+
SOT-89
5000
原装进口价格优 请找坤融电子!
询价
深圳市中联芯电子有限公司
2SA2124-TD-E
ON
25+
SOT89
9000
只做原装正品 有挂有货 假一赔十
询价
洪芯国际半导体（深圳）有限公司
2SA2124-TD-E
ON
26+
SOT-89
86720
全新原装正品价格最实惠 假一赔百
询价
深圳市纳立科技有限公司
2SA2124-TD-EX
三年内
1983
只做原装正品
询价
艾睿（深圳）半导体有限公司
2SA2124-TD-E
ON(安森美)
2447
SOT-89
315000
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
天津市博通航睿技术有限公司
2SA2124-TD-E
ON/安森美
23+
SMD
7000
询价
深圳市创新迹电子有限公司
2SA2124-TD-E
SANYO
22+
SOT-89
20000
公司只有原装 品质保证
询价

2SA212芯片相关品牌

2SA212规格书下载地址

2SA212参数引脚图相关

2SA212数据表相关新闻

DdatasheetPDF页码索引

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