2SA212晶体管资料

  • 2SA212(H)别名:2SA212(H)三极管、2SA212(H)晶体管、2SA212(H)晶体三极管

  • 2SA212(H)生产厂家:日本日立公司

  • 2SA212(H)制作材料:Ge-PNP

  • 2SA212(H)性质:开关管 (S)

  • 2SA212(H)封装形式:直插封装

  • 2SA212(H)极限工作电压:25V

  • 2SA212(H)最大电流允许值:0.1A

  • 2SA212(H)最大工作频率:>4MHZ

  • 2SA212(H)引脚数:3

  • 2SA212(H)最大耗散功率:0.12W

  • 2SA212(H)放大倍数

  • 2SA212(H)图片代号:C-78

  • 2SA212(H)vtest:25

  • 2SA212(H)htest:4000100

  • 2SA212(H)atest:0.1

  • 2SA212(H)wtest:0.12

  • 2SA212(H)代换 2SA212(H)用什么型号代替:ASY26,ASY27,ASY48,

2SA212价格

参考价格:¥0.6185

型号:2SA2124-TD-E 品牌:ON 备注:这里有2SA212多少钱,2026年最近7天走势,今日出价,今日竞价,2SA212批发/采购报价,2SA212行情走势销售排行榜,2SA212报价。
型号 功能描述 生产厂家 企业 LOGO 操作

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP

Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity • High-speed switching Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

High-Current Switching Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity • High-speed switching Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

SANYO

三洋

Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP

Bipolar Transistor -30V, -2A, Low VCE(sat), PNP Single PCP Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacity • High-speed switching Applicaitons • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, mo

ONSEMI

安森美半导体

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications

PNP / NPN Epitaxial Planar Silicon Transistors Features • Adoption of MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

SANYO

三洋

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, mo

ONSEMI

安森美半导体

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single PCP

Bipolar Transistor (–)50V, (–)3A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of MBIT process • Large current capacity • Low collector to emitter saturation voltage • High-speed switching • Halogen free compliance Applicaitons • DC / DC converter, relay drivers, lamp drivers, mo

ONSEMI

安森美半导体

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • DC/DC converter,relay drivers,lamp drivers,motor drivers

ISC

无锡固电

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers.

SANYO

三洋

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.1A ·Large current capacitance ·High-speed switching APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash

ISC

无锡固电

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA

Bipolar Transistor -50V, -3A, Low VCE(sat), PNP Single TP/TP-FA Features • Adoption of MBIT processes • High current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

ONSEMI

安森美半导体

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP Features • Adoption of MBIT process • Low saturation voltage • High current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

High-Current Switching Applications

PNP Epitaxial Planar Silicon Transistor Features • Adoption of MBIT process. • Low saturation voltage. • High current capacity and wide ASO. Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment.

SANYO

三洋

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP

Bipolar Transistor -50V, -2A, Low VCE(sat), PNP Single MP Features • Adoption of MBIT process • Low saturation voltage • High current capacity and wide ASO Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment

ONSEMI

安森美半导体

Power Amplifier Applications

文件:153.37 Kbytes Page:5 Pages

TOSHIBA

东芝

isc Silicon PNP Power Transistor

文件:276.66 Kbytes Page:2 Pages

ISC

无锡固电

音频功放晶体管

THUNDERSOFT

中科创达

音频功放晶体管

THUNDERSOFT

中科创达

Power transistor for high-speed switching applications

TOSHIBA

东芝

High Current Capability

文件:114.57 Kbytes Page:2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

文件:74.29 Kbytes Page:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Power Amplifier Applications

文件:133.25 Kbytes Page:4 Pages

TOSHIBA

东芝

High-Current Switching Applications

文件:97.05 Kbytes Page:4 Pages

SANYO

三洋

High-Current Switching Applications

文件:423.56 Kbytes Page:7 Pages

SANYO

三洋

High-Current Switching Applications

文件:97.05 Kbytes Page:4 Pages

SANYO

三洋

High-Current Switching Applications

文件:423.56 Kbytes Page:7 Pages

SANYO

三洋

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 30V 2A PCP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

DC / DC Converter Applications

文件:473.05 Kbytes Page:8 Pages

SANYO

三洋

DC / DC Converter Applications

文件:473.05 Kbytes Page:8 Pages

SANYO

三洋

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 3A PCP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

文件:36.7 Kbytes Page:4 Pages

SEME-LAB

2SA212产品属性

  • 类型

    描述

  • 型号

    2SA212

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-5 -25V -.1A .12W

更新时间:2026-1-27 15:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
三年内
1983
只做原装正品
SANYO
18+
SOT-89
85600
保证进口原装可开17%增值税发票
SANYO(三洋半导体)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
ON/安森美
2025+
SOT-89
5000
原装进口价格优 请找坤融电子!
ON(安森美)
2447
SOT-89
115000
1000个/圆盘一级代理专营品牌!原装正品,优势现货,
ON SEMICONDUCTOR
2309
con
5
现货常备产品原装可到京北通宇商城查价格
ON/安森美
23+
SOT-89
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
SANYO
26+
QFN
86720
全新原装正品价格最实惠 假一赔百
ON/安森美
24+
SOT-89
28235
郑重承诺只做原装进口现货
onsemi
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐

2SA212数据表相关新闻