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2SA20晶体管资料

  • 2SA20别名：2SA20三极管、2SA20晶体管、2SA20晶体三极管

  • 2SA20生产厂家：日本日电公司

  • 2SA20制作材料：Ge-PNP

  • 2SA20性质：调幅 （AM）_中频放大 （ZF）

  • 2SA20封装形式：直插封装

  • 2SA20极限工作电压：12V

  • 2SA20最大电流允许值：0.002A

  • 2SA20最大工作频率：55MHZ

  • 2SA20引脚数：3

  • 2SA20最大耗散功率：

  • 2SA20放大倍数：

  • 2SA20图片代号：C-78

  • 2SA20vtest：12

  • 2SA20htest：55000000

  • 2SA20atest：0.002

  • 2SA20wtest：0

  • 2SA20代换 2SA20用什么型号代替：AF124,AF125,AF126,AF200,2N3323,2N3324,2N3325,2SA104,3AG53A,

2SA20价格

参考价格：￥0.9740

型号：2SA20090SL 品牌：Panasonic 备注：这里有2SA20多少钱，2025年最近7天走势，今日出价，今日竞价，2SA20批发/采购报价，2SA20行情走势销售排行榜，2SA20报价。
型号 功能描述 生产厂家&企业 LOGO 操作
2SA2002

FORHIGHCURRENTAPPLICATIONSILICONPNPEPITAXIALTYPEMICRO(FRAMETYPE)

DESCRIPTION 2SA2002isasiliconPNPexitaxialtypetransistordesignedwithhighcollectorcurrent,smallVCE(sat). APPLICATION Smalltypemotordrive,relaydrive,powersupplyapplication.

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA
2SA2004

SiliconPNPepitaxialplanertype

SiliconPNPepitaxialplanartype Forpoweramplification ■Features •HighforwardcurrenttransferratiohFE •SatisfactorylinearityofforwardcurrenttransferratiohFE •Dielectricbreakdownvoltageofthepackage:>5kV •High−speedswitching

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SA2004

SiliconPNPPowerTransistor

DESCRIPTION •SiliconPNPepitaxialplannertype •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Poweramplifierapplications •Driverstageamplifierapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
2SA2005

ForAudioAmplifieroutput-TVVelosityModulation(-160V,-1.5A)

Features 1)ElectricalcharacteristicsofDCcurrentgainhFEisflat. 2)Highbreakdownvoltage.(BVCEO=160V(Min.),atIC=1mA) 3)HighfT.(Typ.150MHz,atVCE=10V,IE=0.2A,f=100MHz) 4)WideSOA. Applications Poweramplifier Velositymodulation Structure PNPSiliconEpitaxia

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2007

High-speedSwitchingTransistor(−60V,−12A)

Features 1)Highswitchingspeed. (Typ.tf=0.15µsatIc=−6A) 2)Lowsaturationvoltage. (Typ.VCE(sat)=−0.2VatIC/IB=−6A/−0.3A) 3)WideSOA.(safeoperatingarea) 4)Complementsthe2SC5526.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2009

SiliconPNPepitaxialplanertype

Forlow-frequencyhighbreakdownvoltageamplification ■Features •HighcollectortoemittervoltageVCEO •LownoisevoltageNV

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SA201

2SA203

2SA203

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2SA2010

SiliconPNPepitaxialplanertype

SiliconPNPepitaxialplanartype ForDC-DCconverter Forvariousdrivercircuits ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •High-speedswitching •Minitypepackage,allowingdownsizingandthinningoftheequipmentandautomaticinsertionthroughthetapepacking.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SA2011

DC/DCConverterApplications

DC/DCConverterApplications Features ·AdoptionofMBITprocesses. ·Largecurrentcapacitance. ·Lowcollector-to-emittersaturationvoltage. ·High-speedswitching. ·Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim. ·Highallowablepowerdissipation. Applicat

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA2012

DC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofMBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim. •Highallowablepowerdissipation. Applications •Relaydrivers,

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA2012

BipolarTransistor??0V,??A,LowVCE(sat)PNPSinglePCP

Features •AdoptionofMBITprocesses •Largecurrentcapacity •Lowcollectortoemittersaturationvoltage •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim •Highallowablepowerdissipation Applicaitons •Relaydrivers,lampdrivers,motordrivers,flash

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SA2012-TD-E

BipolarTransistor??0V,??A,LowVCE(sat)PNPSinglePCP

Features •AdoptionofMBITprocesses •Largecurrentcapacity •Lowcollectortoemittersaturationvoltage •Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim •Highallowablepowerdissipation Applicaitons •Relaydrivers,lampdrivers,motordrivers,flash

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SA2013

BipolarTransistor

Features •AdoptionofFBETandMBITprocesses•Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage•High-speedswitching •Ultrasmallpackagefacilitalesminiaturizationinendproducts •Highallowablepowerdissipation Applicaitons •Relaydrivers,lampdr

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SA2013

DC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Ultrasmallpackagefacilitalesminiaturizationinendproducts •Highallowablepowerdissipation Applicaitons •

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA2013-TD-E

BipolarTransistor

Features •AdoptionofFBETandMBITprocesses•Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage•High-speedswitching •Ultrasmallpackagefacilitalesminiaturizationinendproducts •Highallowablepowerdissipation Applicaitons •Relaydrivers,lampdr

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SA2014

DC/DCConverterApplications

DC/DCConverterApplications Features ·AdoptionofMBITprocesses. ·Largecurrentcapacitance. ·Lowcollector-to-emittersaturationvoltage. ·High-speedswitching. ·Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim. ·Highallowablepowerdissip

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA2015

DC/DCConverterApplications

DC/DCConverterApplications Features ·AdoptionofMBITprocesses. ·Largecurrentcapacitance. ·Lowcollector-to-emittersaturationvoltage. ·High-speedswitching. ·Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim. ·Highallowablepowerdissip

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA2016

DC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofFBETandMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Ultrasmallpackagefacilitalesminiaturizationinendproducts •Highallowablepowerdissipation Applicaitons •

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA2016

PNPEPITAXIALPLANARTRANSISTOR

FEATURES *Highcurrentcapacitance. *Lowcollector-to-emittersaturationvoltage. *High-speedswitching *Highallowablepowerdissipation. APPLICATIONS *Relaydrivers,lampdrivers,motordrivers,strobes.

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SA2016

BipolarTransistor(-)50V,(-)7A,LowVCE(sat),(PNP)NPNSinglePCP

Features •AdoptionofFBETandMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Ultrasmallpackagefacilitalesminiaturizationinendproducts •Highallowablepowerdissipation Applicaitons •Relaydrivers,l

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SA2016-AB3-R

PNPEPITAXIALPLANARTRANSISTOR

FEATURES *Highcurrentcapacitance. *Lowcollector-to-emittersaturationvoltage. *High-speedswitching *Highallowablepowerdissipation. APPLICATIONS *Relaydrivers,lampdrivers,motordrivers,strobes.

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SA2016L-AB3-R

PNPEPITAXIALPLANARTRANSISTOR

FEATURES *Highcurrentcapacitance. *Lowcollector-to-emittersaturationvoltage. *High-speedswitching *Highallowablepowerdissipation. APPLICATIONS *Relaydrivers,lampdrivers,motordrivers,strobes.

UTCUnisonic Technologies

友顺友顺科技股份有限公司

UTC
2SA2016-TD-E

BipolarTransistor(-)50V,(-)7A,LowVCE(sat),(PNP)NPNSinglePCP

Features •AdoptionofFBETandMBITprocesses •Largecurrentcapacity •Lowcollector-to-emittersaturationvoltage •High-speedswitching •Ultrasmallpackagefacilitalesminiaturizationinendproducts •Highallowablepowerdissipation Applicaitons •Relaydrivers,l

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SA2018

SOT-523Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Acollectorcurrentislarge. ●LowVCE(sat).VCE(sat)≤-250mVatIC=-200mA/IB=-10mA

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
2SA2018

LOWFREQUENCYTRANSISTOR

FEATURES ●Acollcetercurrentislarge. ●Collectersaturationvoltageislow. VCE(sat)≤250mVAtIC=-200mA/IB=-10mA APPLICATIONS ●Forswitching,formuting.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
2SA2018

LowFrequencyTransistor

Features ●Acollectorcurrentislarge ●Collectorsaturationvoltageislow.VCE(sat)≤250mAatIC=200mA/IB=10mA

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN
2SA2018

PNPGeneraPurposeTransistors

FEATURES: *Acollectorcurrentislarge. *LowVCE(sat).VCE(sat)≤-250mV@IC=-200mA/IB=-10mA

WEITRON

Weitron Technology

WEITRON
2SA2018

Lowfrequencytransistor

Features 1)Highcurrent. 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦250mAatIC=-200mA/IB=-10mA Application LOWFREQUENCYAMPLIFIER,DRIVER

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2018E3HZG

Lowfrequencytransistor

Features 1)Acollectorcurrentislarge. 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦250mA atIC=-200mA/IB=-10mA Application LOWFREQUENCYAMPLIFIER,DRIVER

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2018F

PNPSiliconGeneralPurposeTransistor

FEATURES HighCollectorCurrent LowVCE(sat)-VCE(sat)≤-250mVatIC=-200mA/IB=-10mA

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
2SA202

2SA203

2SA203

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2SA2021

SiliconPNPepitaxialplanertype

Forgeneralamplification Complementaryto2SC5609 ■Features •HighfowardcurrenttransferratiohFE •SSS-minitypepackage,allowingdownsizingandthinningoftheequipmentandautomaticinsertionthroughthetapepacking

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SA2022

DC/DCConverterApplications

DC/DCConverterApplications Features ·AdoptionofMBITprocesses. ·Largecurrentcapacitance. ·Lowcollector-to-emittersaturationvoltage. ·High-speedswitching. ·Highallowablepowerdissipation. Applications ·Relaydrivers,lampdrivers,motordrivers,strobes

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA2023

60V/5AHigh-SpeedSwitchingApplications

60V/5AHigh-SpeedSwitchingApplications Features ·Lowcollector-to-emittersaturationvoltage. ·ExcellentdependenceofhFEoncurrent. ·High-speedswitching. ·Micalesspackagefacilitatingmounting. Applications ·Variousinductancelampdriversforelectricalequip

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA2025

DC/DCConverterApplications

DC/DCConverterApplications Features ·AdoptionofMBITprocesses. ·Largecurrentcapacitance. ·Lowcollector-to-emittersaturationvoltage. ·High-speedswitching. ·Ultrasmall-sizedpackagepermittingappliedsetstobemadesmallandslim. ·Highallowablepowerdissip

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO
2SA2026

FORLOWFREQUENCYAMPLIFYAPPLICATIONSILICONPNPEPITAXIALTYPE

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA2026isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforlowfrequencyvoltageapplication. FEATURE ●Smallcollectortoemittersaturationvoltage.VCE(sat)=-0.5Vmax ●Superminipackag

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA
2SA2027

SMALL-SIGNALTRANSISTORFORLOWFREQUENCYPOWERAMPLIFYAPPLICATION

FORLOWFREQUENCYAMPLIFYAPPLICATION DESCRIPTION 2SA2027isasuperminipackageresinsealedsiliconPNPepitaxialtransistor,Itisdesignedforhighvoltageapplication. FEATURE ●Smallcollectortoemittersaturationvoltage. VCE(sat)=-0.5Vmax APPLICATION ForHybridIC,DC-D

ISAHAYAIsahaya Electronics Corporation

谏早电子谏早电子株式会社

ISAHAYA
2SA2027

SILICONEPITAXIALTRANSISTOR

[Isahaya] Overview 2SA2027Resin-sealedsiliconePNPepitaxialtigerItisdesignedandmanufacturedwithhighwithstandvoltage. Widelyusedforminiaturizationofsetsandhigh-densitymountingIwill. SpecialChief •Smalloutershapeenablesminiaturizationofsetandhigh-densitymountin

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2SA2028

SiliconPNPepitaxialplanertype

ForDC-DCconverter ■Features •Largecurrentcapacitance •Lowcollectortoemittersaturationvoltage •High-speedswitching •Smalltypepackage,allowingdownsizingandthinningoftheequipment.

PanasonicPanasonic Semiconductor

松下松下电器

Panasonic
2SA2029

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2029

GeneralPurposeTransistor(??0V,??.15A)

Features 1)GeneralPurpose. 2)ComplementaryNPNTypes:2SC5658(VMT3)/2SC4617EB(EMT3F)/2SC4617(EMT3)/2SC4081UB(UMT3F)/2SC4081(UMT3)/2SC2412(SMT3) 3)Complextransistors:EMT1/EMT2/EMT3(EMT6)/UMT1N/UMT2N(UMT6)/IMT1A/IMT2A/IMT3A(SMT6) 4)LeadFree/RoHSCompli

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2029

GeneralPurposeTransistor(??0V,??.15A)

Features 1)GeneralPurpose. 2)ComplementaryNPNTypes:2SC5658(VMT3)/2SC4617EB(EMT3F)/2SC4617(EMT3)/2SC4081UB(UMT3F)/2SC4081(UMT3)/2SC2412(SMT3) 3)Complextransistors:EMT1/EMT2/EMT3(EMT6)/UMT1N/UMT2N(UMT6)/IMT1A/IMT2A/IMT3A(SMT6) 4)LeadFree/RoHSCompli

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2029

GeneralPurposeTransistor(-50V,-150mA)

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2029

GeneralPurposeTransistor(??0V,??.15A)

Features 1)GeneralPurpose. 2)ComplementaryNPNTypes:2SC5658(VMT3)/2SC4617EB(EMT3F)/2SC4617(EMT3)/2SC4081UB(UMT3F)/2SC4081(UMT3)/2SC2412(SMT3) 3)Complextransistors:EMT1/EMT2/EMT3(EMT6)/UMT1N/UMT2N(UMT6)/IMT1A/IMT2A/IMT3A(SMT6) 4)LeadFree/RoHSCompli

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2029M3

PNPSiliconGeneralPurposeAmplifierTransistor

ThisPNPtransistorisdesignedforgeneralpurposeamplifierapplications.ThisdeviceishousedintheSOT−723packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspaceisatapremium. Features •ReducesBoardSpace •HighhFE,210−460(Typical) •LowVCE(sat),

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SA2029M3T5G

PNPSiliconGeneralPurposeAmplifierTransistor

ThisPNPtransistorisdesignedforgeneralpurposeamplifierapplications.ThisdeviceishousedintheSOT−723packagewhichisdesignedforlowpowersurfacemountapplications,whereboardspaceisatapremium. Features •ReducesBoardSpace •HighhFE,210−460(Typical) •LowVCE(sat),

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
2SA2029Q

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2029R

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2029S

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2029T2LR

ExcellenthFElinearity,Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658

Features 1)GeneralPurpose. 2)ComplementaryNPNTypes:2SC5658(VMT3)/2SC4617EB(EMT3F)/2SC4617(EMT3)/2SC4081UB(UMT3F)/2SC4081(UMT3)/2SC2412(SMT3) 3)Complextransistors:EMT1/EMT2/EMT3(EMT6)/UMT1N/UMT2N(UMT6)/IMT1A/IMT2A/IMT3A(SMT6) 4)LeadFree/RoHSCompli

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2029TL

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2029TLQ

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2029TLR

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2029TLS

GeneralPurposeTransistor

Features 1)ExcellenthFElinearity. 2)Complementsthe2SC2412K/2SC4081/2SC4617/2SC5658/2SC1740S.

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA203

2SA203

2SA203

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
2SA2030

Lowfrequencytransistor

Features 1)Highcurrent. 2)Collector-Emittersaturationvoltageislow. VCE(sat)≦250mAatIC=-200mA/IB=-10mA Application LOWFREQUENCYAMPLIFIER,DRIVER

ROHMRohm

罗姆罗姆半导体集团

ROHM
2SA2030PT

LowFerquencyPNPTransistor

VOLTAGE12VoltsCURRENT0.5Ampere FEATURE *Smallsurfacemountingtype.(SOT-723) *Acollectorcurrentislarge. *Collectorsaturationvoltageislow. AtIc=200mA/IB=10mA VCE(sat) APPLICATION *Forswitching,formuting.

CHENMKOCHENMKO ENTERPRISE CO., LTD.

力勤力勤股份有限公司

CHENMKO
2SA2031

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Complementtotype2SC5669 •Wideareaofsafeoperation •Largecurrentcapacitance APPLICATIONS •Foraudiofrequencyoutputapplications

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

锦美电子泉州锦美电子有限公司

JMNIC
2SA2031

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PNpackage •Complementtotype2SC5669 •Wideareaofsafeoperation •Largecurrentcapacitance APPLICATIONS •Foraudiofrequencyoutputapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
2SA2031

230V/15A,AF100WOutputApplications

230V/15A,AF100WOutputApplications Features •Largecurrentcapacitance. •WideASOandhighdurabilityagainstbreakdown. •AdoptionofMBITprocess.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

2SA20产品属性

  • 类型

    描述

  • 型号

    2SA20

  • 制造商

    Distributed By MCM

  • 功能描述

    SUB ONLY TRANSISTOR TO-1 -15V -.005A .03

2SA20供应商更多...

更新时间：2025-5-17 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
2SA201000L-(TX)
-
24+
NA/
3270
原装现货,当天可交货,原型号开票
询价
深圳市威雅利发展有限公司
2SA201000L
PANASONIC
08+PB
SOT-23
201000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市明嘉莱科技有限公司
2SA201000L-(TX)
PANASONIC/松下
24+
SMD
990000
明嘉莱只做原装正品现货
询价
深圳市航润创能电子集团有限公司
2SA201000L
Panasoni
21+
SOT-23
52970
原装现货假一赔十
询价
深圳兆威电子有限公司
2SA2010
PANASO
23+
SOT-23
63000
原装正品现货
询价
深圳市振宏微科技有限公司
2SA2010,2SC3744,XC6210B372PR
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
贸泽芯城（深圳）电子科技有限公司
2SA201000
PANASONIC/松下
23+
SOT-23
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
深圳市一线半导体有限公司
2SA2010
Panasonic/松下
24+
SOT-23
6200
新进库存/原装
询价
深圳市宏捷佳电子科技有限公司
2SA2010
PANASONIC
2023+
SOT-23
50000
原装现货
询价
深圳市创新迹电子有限公司
2SA201000L
原装PANASONIC
23+
原厂正规渠道
5000
专注配单,只做原装进口现货
询价

2SA20芯片相关品牌

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