丝印代码：2SA2016；DC / DC Converter Applications

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FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)

DESCRIPTION 2SA2002 is a silicon PNP exitaxial type transistor designed with high collector current, small VCE(sat). APPLICATION Small type motor drive, relay drive, power supply application.

Silicon PNP Power Transistor

DESCRIPTION • Silicon PNP epitaxial planner type • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For power amplification ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High−speed switching

Driver Transistor

为支持现有客户而生产的产品。不对新设计出售此产品。

For Audio Amplifier output - TV Velosity Modulation (-160V,-1.5A)

Features 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO= 160V(Min.), at IC= 1mA) 3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz) 4) Wide SOA. Applications Power amplifier Velosity modulation Structure PNP Silicon Epitaxia

Driver Transistor

为支持现有客户而生产的产品。不对新设计出售此产品。

High-speed Switching Transistor (−60V,−12A)

Features 1) High switching speed. (Typ. tf = 0.15µs at Ic = −6A) 2) Low saturation voltage. (Typ. VCE(sat)= −0.2V at IC / IB = −6A / −0.3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5526.

Silicon PNP epitaxial planer type

For low-frequency high breakdown voltage amplification ■ Features • High collector to emitter voltage VCEO • Low noise voltage NV

2SA203

2SA203

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For DC-DC converter For various driver circuits ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing.

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. Applicat

DC/DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • Ultrasmall-sized package permitting applied sets to be made small and slim. • High allowable power dissipation. Applications • Relay drivers,

Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP

Features • Adoption of MBIT processes • Large current capacity • Low collector to emitter saturation voltage • Ultrasmall-sized package permitting applied sets to be made small and slim • High allowable power dissipation Applicaitons • Relay drivers, lamp drivers, motor drivers, flash

Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP

Features • Adoption of MBIT processes • Large current capacity • Low collector to emitter saturation voltage • Ultrasmall-sized package permitting applied sets to be made small and slim • High allowable power dissipation Applicaitons • Relay drivers, lamp drivers, motor drivers, flash

Bipolar Transistor

Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, lamp dr

DC/DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons •

Bipolar Transistor

Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, lamp dr

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissip

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissip

DC/DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons •

Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, l

PNP EPITAXIAL PLANAR TRANSISTOR

FEATURES * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching * High allowable power dissipation. APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes.

PNP EPITAXIAL PLANAR TRANSISTOR

FEATURES * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching * High allowable power dissipation. APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes.

PNP EPITAXIAL PLANAR TRANSISTOR

FEATURES * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching * High allowable power dissipation. APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes.

Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, l

丝印代码：BW；LOW FREQUENCY TRANSISTOR

FEATURES ● A collceter current is large. ● Collecter saturation voltage is low. VCE(sat)≤250mV At IC=-200mA/IB=-10mA APPLICATIONS ● For switching,for muting.

SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● A collector current is large. ● Low VCE(sat). VCE(sat)≤-250mV at IC = -200mA / IB = -10mA

Low Frequency Transistor

Features ● A collector current is large ● Collector saturation voltage is low. VCE(sat) ≤ 250mA at IC=200mA/IB=10mA

PNP Genera Purpose Transistors

FEATURES: * A collector current is large. * Low VCE(sat). VCE(sat)≤-250mV @ IC = -200mA / IB = -10mA

丝印代码：BW；Low frequency transistor

Features 1) High current. 2) Collector-Emitter saturation voltage is low. VCE(sat)≦250mA at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER

丝印代码：BW；Low frequency transistor

Features 1)A collector current is large. 2)Collector-Emitter saturation voltage is low. 　 VCE(sat)≦250mA 　 at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER

PNP Silicon General Purpose Transistor

FEATURES High Collector Current Low VCE(sat) - VCE(sat)≤-250mV at IC = -200mA/IB=-10mA

2SA203

2SA203

Silicon PNP epitaxial planer type

For general amplification Complementary to 2SC5609 ■ Features • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · High allowable power dissipation. Applications · Relay drivers, lamp drivers, motor drivers, strobes

60V / 5A High-Speed Switching Applications

60V / 5A High-Speed Switching Applications Features · Low collector-to-emitter saturation voltage. · Excellent dependence of hFEon current. · High-speed switching. · Micaless package facilitating mounting. Applications · Various inductance lamp drivers for electrical equip

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissip

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA2026 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.5V max ●Super mini packag

SILICON EPITAXIAL TRANSISTOR

[Isahaya] Overview 2SA2027 Resin-sealed silicone PNP epitaxial tiger It is designed and manufactured with high withstand voltage. Widely used for miniaturization of sets and high-density mounting I will. Special Chief • Small outer shape enables miniaturization of set and high-density mountin

SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA2027 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for high voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.5V max APPLICATION For Hybrid IC, DC-D

Silicon PNP epitaxial planer type

For DC-DC converter ■ Features • Large current capacitance • Low collector to emitter saturation voltage • High-speed switching • Small type package, allowing downsizing and thinning of the equipment.

General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

丝印代码：FR；General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

丝印代码：FQ；General Purpose Transistor (-50V, -150mA)

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

丝印代码：FR；General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

丝印代码：FR；General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor (-50V, -150mA)

lFeatures 1)Excellent hFE linearity. 2)Complements the 2SC5658 HZG. lApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER

PNP Silicon General Purpose Amplifier Transistor

This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces Board Space • High hFE, 210−460 (Typical) • Low VCE(sat),

PNP Silicon General Purpose Amplifier Transistor

This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces Board Space • High hFE, 210−460 (Typical) • Low VCE(sat),

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

Excellent hFE linearity, Complements the 2SC2412K / 2SC4081 /2SC4617 / 2SC5658

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

2SA203

2SA203

丝印代码：BW；Low frequency transistor

Features 1) High current. 2) Collector-Emitter saturation voltage is low. VCE(sat)≦250mA at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER