FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)

DESCRIPTION 2SA2002 is a silicon PNP exitaxial type transistor designed with high collector current, small VCE(sat). APPLICATION Small type motor drive, relay drive, power supply application.

Silicon PNP Power Transistor

DESCRIPTION • Silicon PNP epitaxial planner type • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Power amplifier applications • Driver stage amplifier applications

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For power amplification ■ Features • High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High−speed switching

For Audio Amplifier output - TV Velosity Modulation (-160V,-1.5A)

Features 1) Electrical characteristics of DC current gain hFE is flat. 2) High breakdown voltage. (BVCEO= 160V(Min.), at IC= 1mA) 3) High fT. (Typ. 150MHz, at VCE= 10V, IE=0.2A, f=100MHz) 4) Wide SOA. Applications Power amplifier Velosity modulation Structure PNP Silicon Epitaxia

High-speed Switching Transistor (−60V,−12A)

Features 1) High switching speed. (Typ. tf = 0.15µs at Ic = −6A) 2) Low saturation voltage. (Typ. VCE(sat)= −0.2V at IC / IB = −6A / −0.3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SC5526.

Silicon PNP epitaxial planer type

For low-frequency high breakdown voltage amplification ■ Features • High collector to emitter voltage VCEO • Low noise voltage NV

2SA203

2SA203

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For DC-DC converter For various driver circuits ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing.

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. Applicat

DC/DC Converter Applications

DC / DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • Ultrasmall-sized package permitting applied sets to be made small and slim. • High allowable power dissipation. Applications • Relay drivers,

Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP

Features • Adoption of MBIT processes • Large current capacity • Low collector to emitter saturation voltage • Ultrasmall-sized package permitting applied sets to be made small and slim • High allowable power dissipation Applicaitons • Relay drivers, lamp drivers, motor drivers, flash

Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP

Features • Adoption of MBIT processes • Large current capacity • Low collector to emitter saturation voltage • Ultrasmall-sized package permitting applied sets to be made small and slim • High allowable power dissipation Applicaitons • Relay drivers, lamp drivers, motor drivers, flash

Bipolar Transistor

Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, lamp dr

DC/DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons •

Bipolar Transistor

Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, lamp dr

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissip

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissip

DC/DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons •

Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, l

PNP EPITAXIAL PLANAR TRANSISTOR

FEATURES * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching * High allowable power dissipation. APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes.

PNP EPITAXIAL PLANAR TRANSISTOR

FEATURES * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching * High allowable power dissipation. APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes.

PNP EPITAXIAL PLANAR TRANSISTOR

FEATURES * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching * High allowable power dissipation. APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes.

Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, l

PNP Genera Purpose Transistors

FEATURES: * A collector current is large. * Low VCE(sat). VCE(sat)≤-250mV @ IC = -200mA / IB = -10mA

LOW FREQUENCY TRANSISTOR

FEATURES ● A collceter current is large. ● Collecter saturation voltage is low. VCE(sat)≤250mV At IC=-200mA/IB=-10mA APPLICATIONS ● For switching,for muting.

SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● A collector current is large. ● Low VCE(sat). VCE(sat)≤-250mV at IC = -200mA / IB = -10mA

Low Frequency Transistor

Features ● A collector current is large ● Collector saturation voltage is low. VCE(sat) ≤ 250mA at IC=200mA/IB=10mA

Low frequency transistor

Features 1) High current. 2) Collector-Emitter saturation voltage is low. VCE(sat)≦250mA at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER

Low frequency transistor

Features 1)A collector current is large. 2)Collector-Emitter saturation voltage is low. 　 VCE(sat)≦250mA 　 at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER

PNP Silicon General Purpose Transistor

FEATURES High Collector Current Low VCE(sat) - VCE(sat)≤-250mV at IC = -200mA/IB=-10mA

2SA203

2SA203

Silicon PNP epitaxial planer type

For general amplification Complementary to 2SC5609 ■ Features • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · High allowable power dissipation. Applications · Relay drivers, lamp drivers, motor drivers, strobes

60V / 5A High-Speed Switching Applications

60V / 5A High-Speed Switching Applications Features · Low collector-to-emitter saturation voltage. · Excellent dependence of hFEon current. · High-speed switching. · Micaless package facilitating mounting. Applications · Various inductance lamp drivers for electrical equip

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissip

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA2026 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.5V max ●Super mini packag

SILICON EPITAXIAL TRANSISTOR

[Isahaya] Overview 2SA2027 Resin-sealed silicone PNP epitaxial tiger It is designed and manufactured with high withstand voltage. Widely used for miniaturization of sets and high-density mounting I will. Special Chief • Small outer shape enables miniaturization of set and high-density mountin

SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA2027 is a super mini package resin sealed silicon PNP epitaxial transistor, It is designed for high voltage application. FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.5V max APPLICATION For Hybrid IC, DC-D

Silicon PNP epitaxial planer type

For DC-DC converter ■ Features • Large current capacitance • Low collector to emitter saturation voltage • High-speed switching • Small type package, allowing downsizing and thinning of the equipment.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

General Purpose Transistor (-50V, -150mA)

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor (??0V, ??.15A)

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

PNP Silicon General Purpose Amplifier Transistor

This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces Board Space • High hFE, 210−460 (Typical) • Low VCE(sat),

PNP Silicon General Purpose Amplifier Transistor

This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT−723 package which is designed for low power surface mount applications, where board space is at a premium. Features • Reduces Board Space • High hFE, 210−460 (Typical) • Low VCE(sat),

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

Excellent hFE linearity, Complements the 2SC2412K / 2SC4081 /2SC4617 / 2SC5658

Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

General Purpose Transistor

Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S.

2SA203

2SA203

Low frequency transistor

Features 1) High current. 2) Collector-Emitter saturation voltage is low. VCE(sat)≦250mA at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER

Low Ferquency PNP Transistor

VOLTAGE 12 Volts CURRENT 0.5 Ampere FEATURE * Small surface mounting type. (SOT-723) * A collector current is large. * Collector saturation voltage is low. At Ic=200mA/IB=10mA VCE(sat) APPLICATION * For switching,for muting.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SC5669 • Wide area of safe operation • Large current capacitance APPLICATIONS • For audio frequency output applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SC5669 • Wide area of safe operation • Large current capacitance APPLICATIONS • For audio frequency output applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PN package • Complement to type 2SC5669 • Wide area of safe operation • Large current capacitance APPLICATIONS • For audio frequency output applications