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2SA201晶体管资料
2SA201别名:2SA201三极管、2SA201晶体管、2SA201晶体三极管
2SA201生产厂家:日本三洋公司
2SA201制作材料:Ge-PNP
2SA201性质:调幅 (AM)_前置放大 (V)_混频 (M)
2SA201封装形式:直插封装
2SA201极限工作电压:15V
2SA201最大电流允许值:0.015A
2SA201最大工作频率:8MHZ
2SA201引脚数:3
2SA201最大耗散功率:
2SA201放大倍数:
2SA201图片代号:C-47
2SA201vtest:15
2SA201htest:8000000
- 2SA201atest:0.015
2SA201wtest:0
2SA201代换 2SA201用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA101,2SA102,2SA103,2SA104,3AG5A,
2SA201价格
参考价格:¥1.1901
型号:2SA201000L 品牌:Panasonic 备注:这里有2SA201多少钱,2025年最近7天走势,今日出价,今日竞价,2SA201批发/采购报价,2SA201行情走势销售排行榜,2SA201报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
2SA201 | 2SA203 2SA203 | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
Silicon PNP epitaxial planer type Silicon PNP epitaxial planar type For DC-DC converter For various driver circuits ■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • Mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing. | Panasonic 松下 | |||
DC/DC Converter Applications DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissipation. Applicat | SANYO 三洋 | |||
DC/DC Converter Applications DC / DC Converter Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • Ultrasmall-sized package permitting applied sets to be made small and slim. • High allowable power dissipation. Applications • Relay drivers, | SANYO 三洋 | |||
Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP Features • Adoption of MBIT processes • Large current capacity • Low collector to emitter saturation voltage • Ultrasmall-sized package permitting applied sets to be made small and slim • High allowable power dissipation Applicaitons • Relay drivers, lamp drivers, motor drivers, flash | ONSEMI 安森美半导体 | |||
Bipolar Transistor ??0V, ??A, Low VCE(sat) PNP Single PCP Features • Adoption of MBIT processes • Large current capacity • Low collector to emitter saturation voltage • Ultrasmall-sized package permitting applied sets to be made small and slim • High allowable power dissipation Applicaitons • Relay drivers, lamp drivers, motor drivers, flash | ONSEMI 安森美半导体 | |||
Bipolar Transistor Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, lamp dr | ONSEMI 安森美半导体 | |||
DC/DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • | SANYO 三洋 | |||
Bipolar Transistor Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, lamp dr | ONSEMI 安森美半导体 | |||
DC/DC Converter Applications DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissip | SANYO 三洋 | |||
DC/DC Converter Applications DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissip | SANYO 三洋 | |||
DC/DC Converter Applications DC / DC Converter Applications Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • | SANYO 三洋 | |||
PNP EPITAXIAL PLANAR TRANSISTOR FEATURES * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching * High allowable power dissipation. APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. | UTC 友顺 | |||
Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, l | ONSEMI 安森美半导体 | |||
PNP EPITAXIAL PLANAR TRANSISTOR FEATURES * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching * High allowable power dissipation. APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. | UTC 友顺 | |||
PNP EPITAXIAL PLANAR TRANSISTOR FEATURES * High current capacitance. * Low collector-to-emitter saturation voltage. * High-speed switching * High allowable power dissipation. APPLICATIONS * Relay drivers, lamp drivers, motor drivers, strobes. | UTC 友顺 | |||
Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, l | ONSEMI 安森美半导体 | |||
SOT-523 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● A collector current is large. ● Low VCE(sat). VCE(sat)≤-250mV at IC = -200mA / IB = -10mA | JIANGSU 长电科技 | |||
PNP Genera Purpose Transistors FEATURES: * A collector current is large. * Low VCE(sat). VCE(sat)≤-250mV @ IC = -200mA / IB = -10mA | WEITRON | |||
Low frequency transistor Features 1) High current. 2) Collector-Emitter saturation voltage is low. VCE(sat)≦250mA at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER | ROHM 罗姆 | |||
Low Frequency Transistor Features ● A collector current is large ● Collector saturation voltage is low. VCE(sat) ≤ 250mA at IC=200mA/IB=10mA | KEXIN 科信电子 | |||
LOW FREQUENCY TRANSISTOR FEATURES ● A collceter current is large. ● Collecter saturation voltage is low. VCE(sat)≤250mV At IC=-200mA/IB=-10mA APPLICATIONS ● For switching,for muting. | BILIN 银河微电 | |||
Low frequency transistor Features 1)A collector current is large. 2)Collector-Emitter saturation voltage is low. VCE(sat)≦250mA at IC=-200mA/IB=-10mA Application LOW FREQUENCY AMPLIFIER, DRIVER | ROHM 罗姆 | |||
PNP Silicon General Purpose Transistor FEATURES High Collector Current Low VCE(sat) - VCE(sat)≤-250mV at IC = -200mA/IB=-10mA | SECOS 喜可士 | |||
DC / DC Converter Applications 文件:93.6 Kbytes Page:5 Pages | SANYO 三洋 | |||
DC / DC Converter Applications 文件:92.81 Kbytes Page:5 Pages | SANYO 三洋 | |||
双极晶体管,-30V,-5A,低 VCE (sat) PNP 单 PCP | ONSEMI 安森美半导体 | |||
DC / DC Converter Applications 文件:93.6 Kbytes Page:5 Pages | SANYO 三洋 | |||
DC / DC Converter Applications 文件:92.81 Kbytes Page:5 Pages | SANYO 三洋 | |||
封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 30V 5A PCP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
双极晶体管,-50V,-4A,低饱和压,(PNP)NPN 单 PCP | ONSEMI 安森美半导体 | |||
DC / DC Converter Applications 文件:473.33 Kbytes Page:8 Pages | SANYO 三洋 | |||
DC / DC Converter Applications 文件:63.14 Kbytes Page:5 Pages | SANYO 三洋 | |||
DC / DC Converter Applications 文件:63.14 Kbytes Page:5 Pages | SANYO 三洋 | |||
DC / DC Converter Applications 文件:473.33 Kbytes Page:8 Pages | SANYO 三洋 | |||
Bipolar Transistor 文件:364.43 Kbytes Page:8 Pages | ONSEMI 安森美半导体 | |||
封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 4A PCP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications | ONSEMI 安森美半导体 | |||
DC / DC Converter Applications 文件:472.41 Kbytes Page:8 Pages | SANYO 三洋 | |||
DC / DC Converter Applications 文件:467.68 Kbytes Page:8 Pages | SANYO 三洋 | |||
DC / DC Converter Applications 文件:63.52 Kbytes Page:5 Pages | SANYO 三洋 | |||
DC / DC Converter Applications 文件:63.52 Kbytes Page:5 Pages | SANYO 三洋 | |||
DC / DC Converter Applications 文件:467.68 Kbytes Page:8 Pages | SANYO 三洋 | |||
DC / DC Converter Applications 文件:472.41 Kbytes Page:8 Pages | SANYO 三洋 | |||
LOW FREQUENCY TRANSISTOR 文件:155.54 Kbytes Page:4 Pages | BILIN 银河微电 | |||
Low frequency transistor 文件:145.28 Kbytes Page:3 Pages | ROHM 罗姆 | |||
Low frequency transistor(-12V, -500mA) 文件:1.70288 Mbytes Page:12 Pages | ROHM 罗姆 | |||
Low frequency transistor 文件:145.28 Kbytes Page:3 Pages | ROHM 罗姆 | |||
PNP Transistors 文件:939.56 Kbytes Page:2 Pages | KEXIN 科信电子 | |||
LOW FREQUENCY TRANSISTOR 文件:155.54 Kbytes Page:4 Pages | BILIN 银河微电 | |||
PNP Silicon General Purpose Transistor 文件:148.48 Kbytes Page:2 Pages | SECOS 喜可士 |
2SA201产品属性
- 类型
描述
- 型号
2SA201
- 功能描述
2SA203
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
SOT-89 |
1612 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
PANASON/松下 |
24+ |
NA/ |
48600 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ROHM |
2016+ |
SOT323 |
11780 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
PANASONIC/松下 |
24+ |
SMD |
990000 |
明嘉莱只做原装正品现货 |
|||
PANANSONIC |
08+ |
SOT23 |
9000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
PANASONIC/松下 |
25+ |
SOT23 |
32000 |
PANASONIC/松下全新特价2SA201000L即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
21+ |
SOT-89 |
78000 |
只做原装正品 |
|||
UTC(友顺) |
24+/25+ |
SOT-89-3 |
4000 |
UTC原厂一级代理商,价格优势! |
|||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
UTG |
24+ |
SOT-89 |
502731 |
免费送样原盒原包现货一手渠道联系 |
2SA201规格书下载地址
2SA201参数引脚图相关
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- 2SA1979
- 2SA1978
- 2SA1977
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- 2SA1975
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2SA201数据表相关新闻
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2020-4-24
DdatasheetPDF页码索引
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