封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：托盘 描述：RF TRANS PNP 12V 8.5GHZ SOT23 分立半导体产品 晶体管 - 双极（BJT）- 射频

PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

FEATURES • High fT fT = 8.5 GHz TYP. • High gain | S21e | 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA • High-speed switching characterstics • Equivalent NPN transistor is the 2SC3583.

PNP Epitaxial Silicon Transistor

Features ● High fT :fT = 8.5 GHz TYP. ● High gain | S21e |2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA ● High-speed switching characterstics

PNP EPITAXIAL SILICON TRANSISTOR

FEATURES • High fT fT = 8.5 GHz TYP. • High gain | S21e | 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA • High-speed switching characterstics • Equivalent NPN transistor is the NE68133 / 2SC3583.

PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

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