2SA197晶体管资料

  • 2SA197别名:2SA197三极管、2SA197晶体管、2SA197晶体三极管

  • 2SA197生产厂家:日本三洋公司

  • 2SA197制作材料:Ge-PNP

  • 2SA197性质:调幅 (AM)_中频放大 (ZF)

  • 2SA197封装形式:直插封装

  • 2SA197极限工作电压:15V

  • 2SA197最大电流允许值:0.01A

  • 2SA197最大工作频率:<1MHZ或未知

  • 2SA197引脚数:3

  • 2SA197最大耗散功率

  • 2SA197放大倍数

  • 2SA197图片代号:C-47

  • 2SA197vtest:15

  • 2SA197htest:999900

  • 2SA197atest:0.01

  • 2SA197wtest:0

  • 2SA197代换 2SA197用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA202,3AG54B,

型号 功能描述 生产厂家&企业 LOGO 操作

TRANSISTOR(HIGHVOLTAGESWITCHINGAPPLICATIONS)

High-VoltageSwitchingApplications •Highbreakdownvoltage:VCEO=−400V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

SiliconPNPTripleDiffusedType

Features Highvoltage:VCE=-400V

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

TRANSISTOR(HIGHVOLTAGESWITCHINGAPPLICATIONS)

High-VoltageSwitchingApplications •Highbreakdownvoltage:VCEO=−400V

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

DC/DCConverterApplications

DC/DCConverterApplications Features •AdoptionofFBET,MBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Ultrasmallpackagefacilitatesminiaturizationinendproducts.

SANYOSanyo Semicon Device

三洋三洋电机株式会社

SANYO

PNPEPITAXIALSILICONTRANSISTORMICROWAVEAMPLIFIER

FEATURES •HighfT fT=8.5GHzTYP. •Highgain |S21e|2=12.0dBTYP.@f=1.0GHz,VCE=−8V,IC=−20mA •High-speedswitchingcharacterstics •EquivalentNPNtransistoristhe2SC3583.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

PNPEpitaxialSiliconTransistor

Features ●HighfT:fT=8.5GHzTYP. ●Highgain |S21e|2=12.0dBTYP.@f=1.0GHz,VCE=-8V,IC=-20mA ●High-speedswitchingcharacterstics

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPEPITAXIALSILICONTRANSISTOR

FEATURES •HighfT fT=8.5GHzTYP. •Highgain |S21e|2=12.0dBTYP.@f=1.0GHz,VCE=−8V,IC=−20mA •High-speedswitchingcharacterstics •EquivalentNPNtransistoristheNE68133/2SC3583.

CEL

California Eastern Labs

CEL

PNPEitaxialSiliconTransistor

Features ●HighfT(fT=5.5GHzTYP). ●Highgain|S21e|2=10.0dBTYP.@f=1.0GHz,Vce=-10V,Ic=-15mA ●High-speedswitchingcharacterstics

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPEPITAXIALSILICONTRANSISTOR

FEATURES •HighfT fT=5.5GHzTYP. •|S21e|2=10.0dBTYP.@f=1.0GHz,VCE=−10V,IC=−15mA •Highspeedswitchingcharacteristics •EquivalentNPNtransistoristheNE02133/2SC2351. •Alternativeofthe2SA1424.

CEL

California Eastern Labs

CEL

PNPEPITAXIALSILICONTRANSISTORMICROWAVEAMPLIFIER

FEATURES •HighfT fT=5.5GHzTYP. •|S21e|2=10.0dBTYP.@f=1.0GHz,VCE=−10V,IC=−15mA •Highspeedswitchingcharacteristics •EquivalentNPNtransistoristhe2SC2351. •Alternativeofthe2SA1424.

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

NEC

PNPSiliconTransistor(Mediumpoweramplifier)

Description •Mediumpoweramplifier Features •Largecollectorcurrent:ICMax=-500mA •Suitableforlow-Voltageoperationbecauseofitslowsaturationvoltage •Complementarypairwith2SC5342

AUK

AUK corp

AUK

PNPSiliconTransistor(Mediumpoweramplifier)

Description •Mediumpoweramplifier Features •Largecollectorcurrent:ICMax=-500mA •Suitableforlow-Voltageoperationbecauseofitslowsaturationvoltage •Complementarypairwith2SC5342M

AUK

AUK corp

AUK

PNPSiliconTransistor

Description •Mediumpoweramplifier Features •Largecollectorcurrent:IC=-500mA •Lowcollectorsaturationvoltageenablinglow-voltageoperation:VCE(sat)=-0.25Max. •Complementarypairwith2SC5342N

AUK

AUK corp

AUK

PNPSiliconTransistor(Mediumpoweramplifier)

Description •Mediumpoweramplifier Features •Largecollectorcurrent:ICMax=-500mA •Suitableforlow-Voltageoperationbecauseofitslowsaturationvoltage •Complementarypairwith2SC5342S

AUK

AUK corp

AUK

MEDIUMPOWERAMPLIFIER

PNPSiliconTransistor Features •Largecollectorcurrent:ICMax=-500mA •Suitableforlow-Voltageoperationbecauseofitslowsaturationvoltage •Complementarypairwith2SC5342S

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features LargeIC,lowVCE(sat),complementarypairwiththe2SC5342S. Applications Mediumpoweramplifierapplications.

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

蓝箭电子佛山市蓝箭电子股份有限公司

FOSHAN

Mediumpoweramplifier

Description •Mediumpoweramplifier Features •Largecollectorcurrent:ICMax=-500mA •Suitableforlow-Voltageoperationbecauseofitslowsaturationvoltage •Complementarypairwith2SC5342SF

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

PNPSiliconTransistor(Mediumpoweramplifier)

Description •Mediumpoweramplifier Features •Largecollectorcurrent:ICMax=-500mA •Suitableforlow-Voltageoperationbecauseofitslowsaturationvoltage •Complementarypairwith2SC5342SF

AUK

AUK corp

AUK

PNPSiliconTransistor(Mediumpoweramplifier)

Description •Mediumpoweramplifier Features •Largecollectorcurrent:ICMax=-500mA •Suitableforlow-Voltageoperationbecauseofitslowsaturationvoltage •Complementarypairwith2SC5342U

AUK

AUK corp

AUK

Mediumpoweramplifier

Description •Mediumpoweramplifier Features •Largecollectorcurrent:ICMax=-500mA •Suitableforlow-Voltageoperationbecauseofitslowsaturationvoltage •Complementarypairwith2SC5342U

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

MediumPowerAmplifier

Features ●Largecollectorcurrent. ●Suitableforlow-Voltageoperationbecauseofitslowsaturationvoltage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPSiliconTransistor(Mediumpoweramplifier)

Description •Mediumpoweramplifier Features •Largecollectorcurrent:ICMax=-500mA •Suitableforlow-Voltageoperationbecauseofitslowsaturationvoltage •Complementarypairwith2SC5342UF

AUK

AUK corp

AUK

Mediumpoweramplifier

Description •Mediumpoweramplifier Features •Largecollectorcurrent:IC=-500mA •Suitableforlow-Voltageoperationbecauseofitslowsaturationvoltage •Complementarypairwith2SC5342UF

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

High-VoltageSwitchingApplications

文件:166.45 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-VoltageSwitchingApplications

文件:166.45 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-VoltageSwitchingApplications

文件:150.78 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-VoltageSwitchingApplications

文件:169.68 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS PNP 400V 0.5A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS PNP 400V 0.5A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

High-VoltageSwitchingApplications

文件:150.78 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

High-VoltageSwitchingApplications

文件:169.68 Kbytes Page:4 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TOSHIBA

PNPEPITAXIALSILICONTRANSISTORMICROWAVEAMPLIFIER

文件:191.5 Kbytes Page:14 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

PNPEPITAXIALSILICONTRANSISTORMICROWAVEAMPLIFIER

文件:191.5 Kbytes Page:14 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

PNPEPITAXIALSILICONTRANSISTORMICROWAVEAMPLIFIER

文件:191.5 Kbytes Page:14 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

PNPEPITAXIALSILICONTRANSISTORMICROWAVEAMPLIFIER

文件:193.77 Kbytes Page:12 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

PNPEPITAXIALSILICONTRANSISTORMICROWAVEAMPLIFIER

文件:193.77 Kbytes Page:12 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

Mediumpoweramplifier

文件:230.69 Kbytes Page:4 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

Mediumpoweramplifier

文件:241.74 Kbytes Page:4 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

MEDIUMPOWERAMPLIFIER

文件:246.2 Kbytes Page:4 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

Mediumpoweramplifier

文件:297.09 Kbytes Page:4 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

Mediumpoweramplifier

文件:277.11 Kbytes Page:4 Pages

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

KODENSHI

PNPTransistors

文件:726.13 Kbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:726.13 Kbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

PNPTransistors

文件:726.13 Kbytes Page:2 Pages

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

KEXIN

2SA197产品属性

  • 类型

    描述

  • 型号

    2SA197

  • 制造商

    Toshiba

  • 功能描述

    PNP

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    Transistor PNP 400V 0.5A 35MHz PW-Mini

更新时间:2025-7-24 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
3810
原装现货,当天可交货,原型号开票
TOS
23+
二极管
20000
全新原装假一赔十
RENESAS/瑞萨
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
NEC
24+
SOT23-3
880000
明嘉莱只做原装正品现货
NEC
2022+
SOT-23
20000
只做原装进口现货.假一罚十
NEC
20+
SOT-23
36800
原装优势主营型号-可开原型号增税票
RENESAS
23+
SOT-23
30000
原装正品现货
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
NEC
新年份
SOT-23
15000
原装正品大量现货,要多可发货,实单带接受价来谈!
NEC
22+
SOT-23
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!

2SA197芯片相关品牌

  • ABRACON
  • AD
  • BARRY
  • HAMMOND
  • HMSEMI
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

2SA197数据表相关新闻