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晶体管

2SA197晶体管资料

2SA197别名：2SA197三极管、2SA197晶体管、2SA197晶体三极管
2SA197生产厂家：日本三洋公司
2SA197制作材料：Ge-PNP
2SA197性质：调幅（AM）_中频放大（ZF）
2SA197封装形式：直插封装
2SA197极限工作电压：15V
2SA197最大电流允许值：0.01A
2SA197最大工作频率：<1MHZ或未知
2SA197引脚数：3
2SA197最大耗散功率：
2SA197放大倍数：
2SA197图片代号：C-47
2SA197vtest：15
2SA197htest：999900
2SA197atest：0.01
2SA197wtest：0

2SA197代换 2SA197用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA202,3AG54B,

型号	功能描述	生产厂家&企业	LOGO
2SA1971	TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) High-Voltage Switching Applications • High breakdown voltage: VCEO= −400 V	TOSHIBA 东芝	TOSHIBA
2SA1971	Silicon PNP Triple Diffused Type Features High voltage: VCE= -400 V	KEXIN 科信电子	KEXIN
2SA1971	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1972	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1972	TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS) High-Voltage Switching Applications • High breakdown voltage: VCEO = −400 V	TOSHIBA 东芝	TOSHIBA
2SA1973	DC/DC Converter Applications DC/DC Converter Applications Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products.	SANYOSanyo Semicon Device 三洋三洋电机株式会社	SANYO
2SA1977	PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES • High fT fT = 8.5 GHz TYP. • High gain \| S21e \| 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA • High-speed switching characterstics • Equivalent NPN transistor is the 2SC3583.	NEC 瑞萨	NEC
2SA1977	PNP Epitaxial Silicon Transistor Features ● High fT :fT = 8.5 GHz TYP. ● High gain \| S21e \|2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA ● High-speed switching characterstics	KEXIN 科信电子	KEXIN
2SA1977	PNP EPITAXIAL SILICON TRANSISTOR FEATURES • High fT fT = 8.5 GHz TYP. • High gain \| S21e \| 2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA • High-speed switching characterstics • Equivalent NPN transistor is the NE68133 / 2SC3583.	CEL California Eastern Labs	CEL
2SA1978	PNP Eitaxial Silicon Transistor Features ● High fT (fT=5.5GHz TYP). ● High gain \|S21e\|2 =10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA ● High-speed switching characterstics	KEXIN 科信电子	KEXIN
2SA1978	PNP EPITAXIAL SILICON TRANSISTOR FEATURES • High fT fT = 5.5 GHz TYP. • \| S21e \| 2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA • High speed switching characteristics • Equivalent NPN transistor is the NE02133 / 2SC2351. • Alternative of the 2SA1424.	CEL California Eastern Labs	CEL
2SA1978	PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES • High fT fT = 5.5 GHz TYP. • \| S21e \| 2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA • High speed switching characteristics • Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424.	NEC 瑞萨	NEC
2SA1979	PNP Silicon Transistor (Medium power amplifier) Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342	AUK	AUK
2SA1979M	PNP Silicon Transistor (Medium power amplifier) Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342M	AUK	AUK
2SA1979N	PNP Silicon Transistor Description • Medium power amplifier Features • Large collector current : IC = -500mA • Low collector saturation voltage enabling low-voltage operation : VCE(sat) = -0.25 Max. • Complementary pair with 2SC5342N	AUK	AUK
2SA1979S	PNP Silicon Transistor (Medium power amplifier) Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342S	AUK	AUK
2SA1979S	MEDIUM POWER AMPLIFIER PNP Silicon Transistor Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342S	KODENSHI 可天士	KODENSHI
2SA1979S	Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Large IC,low VCE(sat),complementary pair with the 2SC5342S. Applications Medium power amplifier applications.	FOSHAN 蓝箭电子	FOSHAN
2SA1979SF	Medium power amplifier Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342SF	KODENSHI 可天士	KODENSHI
2SA1979SF	PNP Silicon Transistor (Medium power amplifier) Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342SF	AUK	AUK
2SA1979U	PNP Silicon Transistor (Medium power amplifier) Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342U	AUK	AUK
2SA1979U	Medium power amplifier Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342U	KODENSHI 可天士	KODENSHI
2SA1979UF	Medium Power Amplifier Features ● Large collector current. ● Suitable for low-Voltage operation because of its low saturation voltage.	KEXIN 科信电子	KEXIN
2SA1979UF	PNP Silicon Transistor (Medium power amplifier) Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342UF	AUK	AUK
2SA1979UF	Medium power amplifier Description • Medium power amplifier Features • Large collector current : IC=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342UF	KODENSHI 可天士	KODENSHI
2SA1971	High-Voltage Switching Applications 文件：166.45 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1971_09	High-Voltage Switching Applications 文件：166.45 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1972	High-Voltage Switching Applications 文件：150.78 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1972	High-Voltage Switching Applications 文件：169.68 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1972,F(J	封装/外壳：TO-226-3，TO-92-3 长体包装：散装描述：TRANS PNP 400V 0.5A TO92MOD 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SA1972,T6WNLF(J	封装/外壳：TO-226-3，TO-92-3 长体包装：散装描述：TRANS PNP 400V 0.5A TO92MOD 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ETC 知名厂家	ETC
2SA1972_07	High-Voltage Switching Applications 文件：150.78 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1972_09	High-Voltage Switching Applications 文件：169.68 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1977	PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER 文件：191.5 Kbytes Page：14 Pages	RENESAS 瑞萨	RENESAS
2SA1977_15	PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER 文件：191.5 Kbytes Page：14 Pages	RENESAS 瑞萨	RENESAS
2SA1977-T1B-A	PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER 文件：191.5 Kbytes Page：14 Pages	RENESAS 瑞萨	RENESAS
2SA1978	PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER 文件：193.77 Kbytes Page：12 Pages	RENESAS 瑞萨	RENESAS
2SA1978_15	PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER 文件：193.77 Kbytes Page：12 Pages	RENESAS 瑞萨	RENESAS
2SA1979	Medium power amplifier 文件：230.69 Kbytes Page：4 Pages	KODENSHI 可天士	KODENSHI
2SA1979M	Medium power amplifier 文件：241.74 Kbytes Page：4 Pages	KODENSHI 可天士	KODENSHI
2SA1979S	MEDIUM POWER AMPLIFIER 文件：246.2 Kbytes Page：4 Pages	KODENSHI 可天士	KODENSHI
2SA1979SF	Medium power amplifier 文件：297.09 Kbytes Page：4 Pages	KODENSHI 可天士	KODENSHI
2SA1979U	Medium power amplifier 文件：277.11 Kbytes Page：4 Pages	KODENSHI 可天士	KODENSHI
2SA1979UF_15	PNP Transistors 文件：726.13 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA1979UF-O	PNP Transistors 文件：726.13 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN
2SA1979UF-Y	PNP Transistors 文件：726.13 Kbytes Page：2 Pages	KEXIN 科信电子	KEXIN

2SA197产品属性

类型
描述
型号
2SA197
制造商
Toshiba
功能描述
PNP
制造商
Toshiba America Electronic Components
功能描述
Transistor PNP 400V 0.5A 35MHz PW-Mini

2SA197供应商更多...

更新时间：2025-8-7 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	2SA1977	RENESAS/瑞萨	23+	SOT-23	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
深圳市得捷芯城科技有限公司	2SA1977-T1B	NEC	24+	NA/	3810	原装现货,当天可交货,原型号开票	询价
中天科工半导体（深圳）有限公司	2SA1977-T1B	NEC	20+	SOT-23	36800	原装优势主营型号-可开原型号增税票	询价
深圳市明嘉莱科技有限公司	2SA1977-T1B	NEC	24+	SOT23-3	880000	明嘉莱只做原装正品现货	询价
深圳兆威电子有限公司	2SA1977-T1B	RENESAS	23+	SOT-23	30000	原装正品现货	询价
深圳市振宏微科技有限公司	2SA1977	SOT-23	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
富凯科技(深圳）有限公司	2SA1977	UTC/友顺	24+	SOT-23	50000	只做原装，欢迎询价，量大价优	询价
深圳市美思瑞电子科技有限公司	2SA1977-T1B	NEC	22+	SOT-23	12245	现货,原厂原装假一罚十!	询价
深圳市赛美科科技有限公司	2SA1977-T1B	NEC	新年份	SOT-23	15000	原装正品大量现货,要多可发货,实单带接受价来谈!	询价
深圳市一线半导体有限公司	2SA1977-FB	MITSUBISHI	24+		60000		询价

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2SA197晶体管资料

2SA197产品属性

2SA197供应商更多...

2SA197芯片相关品牌

2SA197规格书下载地址

2SA197参数引脚图相关

2SA197数据表相关新闻

2SA1037-R-TP

2SA1037AKT146Q

2SA928AL-TO92NLB-Y-TG

2SA1930Q现货销售，欢迎来电咨询~

2SA812-T1B-A/S6 原装正品现货

2SA2198

DdatasheetPDF页码索引