PNP Epitaxial Silicon Transistor

Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC5242 APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage applications

Silicon PNP Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5242 • High collector voltage: VCEO=-230V(Min) APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5242 • High collector voltage: VCEO=-230V(Min) APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage