2SA1962晶体三极管芯片数据手册货源供应商报价-IC资料网

找IC，尽在114IC

登录注册

芯片资料

芯片资料
丝印反查
库存查询
行业新闻
制造商
替换型号
晶体管

精确

位置：首页 > IC中文资料 > 2SA1962

2SA1962晶体管资料

2SA1962别名：2SA1962三极管、2SA1962晶体管、2SA1962晶体三极管
2SA1962生产厂家：
2SA1962制作材料：Si-PNP
2SA1962性质：低频或音频放大（LF）_HIFI_输出极（E）
2SA1962封装形式：直插封装
2SA1962极限工作电压：230V
2SA1962最大电流允许值：15A
2SA1962最大工作频率：25MHZ
2SA1962引脚数：3
2SA1962最大耗散功率：130W
2SA1962放大倍数：
2SA1962图片代号：B-46
2SA1962vtest：230
2SA1962htest：25000000
2SA1962atest：15
2SA1962wtest：130

2SA1962代换 2SA1962用什么型号代替：2SA1294,

2SA1962价格

参考价格：￥10.4376

型号：2SA1962-O(Q) 品牌：Toshiba 备注：这里有2SA1962多少钱，2026年最近7天走势，今日出价，今日竞价，2SA1962批发/采购报价，2SA1962行情走势销售排行榜，2SA1962报价。

型号	功能描述	生产厂家企业	LOGO
2SA1962	TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1962	PNP Epitaxial Silicon Transistor Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a	FAIRCHILD 仙童半导体	FAIRCHILD
2SA1962	isc Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC5242 APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage applications	ISC 无锡固电	ISC
2SA1962	Silicon PNP Power Transistors DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5242 • High collector voltage: VCEO=-230V(Min) APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage	SAVANTIC	SAVANTIC
2SA1962	Silicon PNP Power Transistors DESCRIPTION • With TO-3P(I) package • Complement to type 2SC5242 • High collector voltage: VCEO=-230V(Min) APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage	JMNIC 锦美电子	JMNIC
2SA1962	PNP Epitaxial Silicon Transistor Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are	ONSEMI 安森美半导体	ONSEMI
2SA1962	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1962	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
2SA1962	Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) • Good Linearity of hFE • Complement to Type 2SC5242 APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio frequency amplifier output stage applications	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1962	Power transistor for high-speed switching applications Application Scope：Audio amplifier output stage 80-W\nPolarity：PNP\nComplementary Product：2SC5242\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：中国 / 日本 Collector Current IC -15 A \nCollector power dissipation PC 130 W \nCollector-emitter voltage VCEO -230 V ;	TOSHIBA 东芝	TOSHIBA
2SA1962	PNP外延硅晶体管	ONSEMI 安森美半导体	ONSEMI
2SA1962	Silicon PNP Power Transistors 文件：237.28 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SA1962	Power Amplifier Applications 文件：129.669 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1962-O	Power Amplifier Applications Power Amplifier Applications • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.	TOSHIBA 东芝	TOSHIBA
2SA1962OTU	PNP Epitaxial Silicon Transistor Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a	FAIRCHILD 仙童半导体	FAIRCHILD
2SA1962OTU	丝印代码：A1962O；PNP Epitaxial Silicon Transistor Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are	ONSEMI 安森美半导体	ONSEMI
2SA1962RTU	丝印代码：A1962R；PNP Epitaxial Silicon Transistor Features • High Current Capability: I C = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are	ONSEMI 安森美半导体	ONSEMI
2SA1962RTU	PNP Epitaxial Silicon Transistor Features • High Current Capability: IC = -17A • High Power Dissipation : 130watts • High Frequency : 30MHz. • High Voltage : VCEO= -250V • Wide S.O.A for reliable operation. • Excellent Gain Linearity for low THD. • Complement to 2SC5242/FJA4313. • Thermal and electrical Spice models are a	FAIRCHILD 仙童半导体	FAIRCHILD
2SA1962_07	Power Amplifier Applications 文件：129.669 Kbytes Page：4 Pages	TOSHIBA 东芝	TOSHIBA
2SA1962_15	Silicon PNP Power Transistors 文件：237.28 Kbytes Page：4 Pages	JMNIC 锦美电子	JMNIC
2SA1962OTU	封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 250V 17A TO3P 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
2SA1962RTU	封装/外壳：TO-3P-3，SC-65-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 250V 17A TO3P 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI

2SA1962产品属性

类型
描述
Pb-free：
Pb
Status：
Active
Polarity：
PNP
Type：
General Purpose
VCE(sat) Max (V)：
3
IC Cont. (A)：
17
VCEO Min (V)：
250
VCBO (V)：
250
VEBO (V)：
5
VBE(on) (V)：
1
hFE Min：
55
hFE Max：
110
fT Min (MHz)：
30
PTM Max (W)：
130
Package Type：
TO-3P-3L

2SA1962供应商更多...

更新时间：2026-5-14 22:59:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	2SA1962RTU	onsemi(安森美)	24+	TO-3P	1224	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市得捷芯城科技有限公司	2SA1962RTU	onsemi(安森美)	25+	TO-3P-3	7786	正规渠道,免费送样。支持账期,BOM一站式配齐	询价
深圳市科芯源微电子有限公司	2SA1962-O(S1ES)	TOSHIBA/东芝	2026+	TO-3P	65428	百分百原装现货实单必成	询价
中天科工半导体（深圳）有限公司	2SA1962	TOSHIBA	专业光耦	TO-3P	65800	光耦原装优势主营型号-可开原型号增税票	询价
深圳市联世界科技有限公司	2SA1962-O(ONK,Q)	TOSHIBA	24+/25+		242	原装正品现货库存价优	询价
深圳市科恒伟业电子有限公司	2SA1962-O	TOSHIBA/东芝	2540+	TO-3P	8595	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市腾亿芯科技有限公司	2SA1962OTU	ON/安森美	25+	SMD	20000	原装	询价
深圳市正纳电子有限公司	2SA1962	TOSHIBA东芝原装	17+18+ROHSnew	TO3P封	75777	2SA1962/2SC5242音响对管QQ350053121	询价
深圳市振宏微科技有限公司	2SA1962-O	TOS	23+	NA	5481	专做原装正品,假一罚百!	询价
深圳市明嘉莱科技有限公司	2SA1962	TOSHIBA/东芝	25+	TO-3P	880000	明嘉莱只做原装正品现货	询价

2SA1962芯片相关品牌

2SA1962规格书下载地址

2SA1962参数引脚图相关

2SA1962数据表相关新闻

2SA1037-R-TP
进口代理
2024-11-1
2SA1037AKT146Q
2SA1037AKT146Q
2023-5-26
2SA928AL-TO92NLB-Y-TG
2SA928AL-TO92NLB-Y-TG
2023-2-1
2SA1930Q现货销售，欢迎来电咨询~
2SP0115T2C0-12
2022-4-15
2SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-30
2SA2198
2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-24

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108
P109

找IC，尽在114IC

2SA1962晶体管资料

2SA1962价格

2SA1962产品属性

2SA1962供应商更多...

2SA1962芯片相关品牌

2SA1962规格书下载地址

2SA1962参数引脚图相关

2SA1962数据表相关新闻

2SA1037-R-TP

2SA1037AKT146Q

2SA928AL-TO92NLB-Y-TG

2SA1930Q现货销售，欢迎来电咨询~

2SA812-T1B-A/S6 原装正品现货

2SA2198

DdatasheetPDF页码索引