TRANSISTOR(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •ExcellenthFElinearity :hFE(1)=200to600(VCE=−2V,IC=−0.5A) :hFE(2)=140(min),200(typ.)(VCE=−2V,IC=−3A) •Lowcollectorsaturationvoltage :VCE(sat)=−0.5V(max)(IC=−3A,IB=−60mA)

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-10V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Fastswitchingspeed ·Complementaryto2SC4681 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-10V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Fastswitchingspeed ·Complementaryto2SC4681 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications