TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A) • Low collector saturation voltage : VCE (sat) = −0.5 V (max) (IC = −3 A, IB = −60 mA)

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -10V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Fast switching speed ·Complementary to 2SC4681 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -10V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Fast switching speed ·Complementary to 2SC4681 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications