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2SA18晶体管资料
2SA18别名：2SA18三极管、2SA18晶体管、2SA18晶体三极管
2SA18生产厂家：日本日立公司
2SA18制作材料：Ge-PNP
2SA18性质：射频/高频放大 （HF）_开关管 （S）
2SA18封装形式：直插封装
2SA18极限工作电压：21V
2SA18最大电流允许值：0.015A
2SA18最大工作频率：19MHZ
2SA18引脚数：3
2SA18最大耗散功率：
2SA18放大倍数：
2SA18图片代号：C-47
2SA18vtest：21
2SA18htest：19000000
- 2SA18atest：0.015
2SA18wtest：0
2SA18代换 2SA18用什么型号代替：AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA102,2SA100,3AG54A,
2SA18价格
参考价格：￥2.6679
型号：2SA1834TLR 品牌：Rohm Semiconductor 备注：这里有2SA18多少钱，2025年最近7天走势，今日出价，今日竞价，2SA18批发/采购报价，2SA18行情走势销售排行榜，2SA18报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
TRANSISTOR(VIDEOOUTPUTSTAGEINHIGHRESOLUTIONDISPLAY) VIDEOOUTPUTSTAGEINHIGHRESOLUTIONDISPLAY ●HighTransitionFrequency:fT=600MHz(Typ.) (VCE=10V,IC=50mA) ●LowCollectorOutputCapacitance:Cob=5.0pF(Typ.) (VCB=-30V) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 |  |   | |
TRANSISTOR(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS) StrobeFlashApplications MediumPowerAmplifierApplications •ExcellenthFElinearity :hFE(1)=200to600(VCE=−2V,IC=−0.5A) :hFE(2)=140(min),200(typ.)(VCE=−2V,IC=−3A) •Lowcollectorsaturationvoltage :VCE(sat)=−0.5V(max)(IC=−3A,IB=−60mA) | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-10V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Fastswitchingspeed ·Complementaryto2SC4681 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-10V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Fastswitchingspeed ·Complementaryto2SC4681 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-10V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Fastswitchingspeed ·Complementaryto2SC4681 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconPNPPowerTransistor DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-10V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Fastswitchingspeed ·Complementaryto2SC4681 APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3PMLpackage ·Complementtotype2SC4688 APPLICATIONS ·Poweramplifierapplications ·Recommendfor40Whighfidelityaudiofrequencyamplifieroutputstage | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3PFMpackage ·Complementtotype2SC4688 APPLICATIONS ·Poweramplifierapplications ·Recommendfor40Whighfidelityaudiofrequencyamplifieroutputstage | SAVANTIC Savantic, Inc. |  | | |
SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3PFMpackage ·Complementtotype2SC4688 APPLICATIONS ·Poweramplifierapplications ·Recommendfor40Whighfidelityaudiofrequencyamplifieroutputstage | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 |  | | |
TRANSISTOR(POWERAMPLIFIERAPPLICATIONS) POWERAMPLIFIERAPPLICATIONS •Complementaryto2SC4688 •Recommend40WHighFidelityAudioFrequencyAmplifieroutputStage. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3PFMpackage •Complementtotype2SC4689 APPLICATIONS •Poweramplifierapplications •Recommendfor55Whighfidelityaudio frequencyamplifieroutputstage | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | | | |
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3PMLpackage •Complementtotype2SC4689 APPLICATIONS •Poweramplifierapplications •Recommendfor55Whighfidelityaudio frequencyamplifieroutputstage | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconPNPPowerTransistors DESCRIPTION •WithTO-3PFMpackage •Complementtotype2SC4689 APPLICATIONS •Poweramplifierapplications •Recommendfor55Whighfidelityaudio frequencyamplifieroutputstage | SAVANTIC Savantic, Inc. | | | |
TRANSISTOR(POWERAMPLIFIERAPPLICATIONS) poweramplifierapplications •Complementaryto2SC4689 •Recommendfor55WHighAudioFrequencyAmplifier outputStage. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SiliconPNPPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3PMLpackage ·Complementtotype2SC4690 APPLICATIONS ·Poweramplifierapplications ·Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SiliconPNPPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3PFMpackage ·Complementtotype2SC4690 APPLICATIONS ·Poweramplifierapplications ·Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage | SAVANTIC Savantic, Inc. | | | |
TRANSISTOR(POWERAMPLIFIERAPPLICATIONS) POWERAMPLIFIERAPPLICATIONS •Complementaryto2SC4690 •Recommendfor70WHighFidelityAudioFrequencyAmplifieroutputStage. | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SiliconPNPPowerTransistors SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3PFMpackage ·Complementtotype2SC4690 APPLICATIONS ·Poweramplifierapplications ·Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 锦美电子泉州锦美电子有限公司 | | | |
SiliconPNPepitaxialplanertype SiliconPNPepitaxialplanartype Forhighspeedswitching ■Features •Highspeedswitching •Lowcollector-emittersaturationvoltageVCE(sat) •SS-Minitypepackageallowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking | PanasonicPanasonic Semiconductor 松下松下电器 |  | | |
High-VoltageSwitchingTransistor(Telephone,PowerSupply)(-600V,-1A)
| ROHMRohm 罗姆罗姆半导体集团 |  | | |
SiliconPNPEpitaxial Features •Excellenthighfrequencycharacteristics fT=300MHztyp •Highvoltageandlowoutputcapacitance VCEO=–200V,Cob=5.0pFtyp •Suitableforwidebandvideoamplifier Application Highfrequencyamplifier | HitachiHitachi Semiconductor 日立日立公司 |  | | |
TRANSISTOR(LOWFREQUENCY,DRIVERSTAGEAMPLIFIER,SWITCHINGAPPLICATIONS LOWFREQUENCYAMPLIFIERAPPLICATIONS. DRIVERSTAGEAMPLIFIERAPPLICATIONS. SWITCHINGAPPLICATIONS. •ExcellenthFELinearity:hFE(2)=35(Min.),(VCE=-2V,IC=-300mA) •Complementaryto2SC4707 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
High-voltageSwitchingTransistor(-400V,-0.5A) High-voltageSwitchingTransistor(Telephonepowersupply)(-400V,-0.5A) Features 1)Highbreakdownvoltage,BVCEO=-400V. 2)Lowsaturationvoltage,typicallyVCE(sat)=-0.3VatIC/IB=-100mA/-10mA. 3)Highswitchingspeed,typicallytf:1μsatIC=-100mA. 4)WideSOA(safeoperati | ROHMRohm 罗姆罗姆半导体集团 | | | |
High-voltageSwitchingTransistor(Telephonepowersupply) High-voltageSwitchingTransistor(Telephonepowersupply)(-400V,-0.5A) Features 1)Highbreakdownvoltage,BVCEO=-400V. 2)Lowsaturationvoltage,typicallyVCE(sat)=-0.3VatIC/IB=-100mA/-10mA. 3)Highswitchingspeed,typicallytf:1μsatIC=-100mA. 4)WideSOA(safeoperati | ROHMRohm 罗姆罗姆半导体集团 | | | |
PNPTransistors ■Features ●Highbreakdownvoltage,BVCEO=-400V. ●Highswitchingspeed,typicallytf:1usatIC=-100mA. ●High-voltageSwitchingTransistor | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 |  | | |
Low-FrequencyGeneral-PurposeAmp,Driver,MutingCircuitApplications? Features •Verysmall-sizedpackagepermitting2SA1813-appliedsetstobemadesmallerandslimmer. •AdoptionofFBETprocess. •HighDCcurrentgain(hFE=500to1200). •Lowcollector-to-emittersaturationvoltage(VCE(sat)≤0.3V). •HighVEBO(VEBO≥15V). | SANYOSanyo Semicon Device 三洋三洋电机株式会社 |  | | |
PNPEpitaxialPlanarSiliconTransistors Features ●Verysmall-sizedpackage. ●AdoptionofFBETprocess. ●HighDCcurrentgain(hFE=500to1200). ●Lowcollector-to-emittersaturationvoltage(VCE(sat)≤0.3V). ●HighVEBO(VEBO≥15V). | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
Low-FrequencyGeneral-PurposeAmp,Driver,MutingCircuitApplications??? Features ·Verysmall-sizedpackagepermitting2SA1814-appliedsetstobemadesmallerandslimmer. ·AdoptionofFBETprocess. ·HighDCcurrentgain(hFE=500to1200). ·Lowcollector-to-emittersaturationvoltage(VCEO(sat)≤0.3V). ·HighVEBO(VEBO≥15V). | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
FM,RM,MIX,IFAmp,High-FrequencyGeneral-PurposeAmpApplications??? PNPEpitaxialPlanarSiliconTransistors Features •Highpowergain:PG=25dB(f=100MHz). •Highcutofffrequency;fT=750MHztyp. •Lowcollector-to-emittersaturationvoltage. •Complementarypairwiththe2SC4432. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
SiliconPNPepitaxialplanertype Features ●HighcollectortoemittervoltageVCEO. | PanasonicPanasonic Semiconductor 松下松下电器 | | | |
TRANSISTOR(HIGHVOLTAGESWITCHING,SPEEDDC-DCCONVERTERAPPLICATIONS) HIGHVOLTAGESWITCHINGAPPLICATIONS HIGHSPEEDDC-DCCONVERTERAPPLICATION | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
SiliconPNPPowerTransistor DESCRIPTION •HighCollector-EmitterBreakdownVoltage •Excellentswitchingtime •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Highvoltageswitchingapplications. •HighspeedDC-DCconverterapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
20V/8ASwitchingApplications 20V/8ASwitchingApplications Features ·AdoptionofMBITprocess. ·Lowsaturationvoltage. ·Fastswicthingspeed. ·Largecurrentcapacity. ·Itispossibletomakeappliancesmorecompactbecauseit’sheightonboardis9.5mm. ·Meetsradialtaping. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
50V/5ASwitchingApplications 50V/5ASwitchingApplications Features •Lowcollector-to-emittersaturationvoltage. •HighGain-BandwidthProduct. •ExcellentlinearityofDCCurrentGain. •Fastswitchingspeed. Applications •Relaydrivers,high-speedinverters,converters,andothergeneralhigh-currentswitchingapp | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
50V/8ASwitchingApplications 50V/8ASwitchingApplications Applications ·Relaydrivers,high-speedinverters,converters,andothergeneralhigh-currentswitchingapplications. Features ·Lowcollector-to-emittersaturationvoltage. ·HighGain-BandwidthProduct. ·ExcellentlinearityofDCCurrent | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
100V/3ASwitchingApplications 100V/3ASwitchingApplications Features ·Lowcollector-to-emittersaturationvoltage. ·HighGain-BandwidthProduct. ·ExcellentlinearityofDCCurrentGain. ·Fastswitchingspeed. Applications ·Relaydrivers,high-speedinverters,converters,andothergeneralhigh-currentswitchin | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
100V/4ASwitchingApplications 100V/4ASwitchingApplications Features ·Lowcollector-to-emittersaturationvoltage. ·HighGain-BandwidthProduct. ·ExcellentlinearityofDCCurrentGain. ·Fastswitchingspeed. Applications ·Relaydrivers,high-speedinverters,converters,andothergeneralhigh-curren | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
TransistorsforTVDisplayVideoOutputUse TransistorsforTVDisplayVideoOutputUse | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
TransistorsforTVDisplayVideoOutputUse TransistorsforTVDisplayVideoOutputUse | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
HighVoltageDriverApplications????????????? High-VoltageDriverApplications Features •Largecurrentcapacity(IC=2A). •Highbreakdownvoltage(VCEO≥400V). •Possibletoofferthe2SA1830/2SC4734devicesinatapereelpackaging,whichfacilitatesautomaticinsertion. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
High-VoltageAmp,High-VoltageSwitching High-VoltageAmplifier,High-VoltageSwitchingApplications Features ·Highbreakdownvoltage(VCEOmin=–800V). ·SmallCob(Cobtyp=1.6pF). ·Highreliabirity(AdoptionofHVPprocesses). | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | | | |
PNPSiliconPlasticEncapsulatedTransistor FEATURES ●HighVoltageandHighCurrent ●ExcellenthFELinearity ●Complementaryto2SC4738 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 |  | | |
PNPTRANSISTOR FEATURES: Highvoltageandhighcurrent ExcellenthFElinearity HighhFE Complementaryto2SA1832 | WEITRON Weitron Technology |  | | |
Plastic-EncapsulatedTransistors FEATURES Powerdissipation PCM:0.1W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited |  | | |
SiliconPNPEpitaxialTypeTransistor ■Features ●Highvoltageandhighcurrent ●ExcellenthFElinearity ●Complementaryto2SC4738 | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | | | |
TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications ●Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) ●ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) ●HighhFE:hFE=70~400 ●Complementaryto2SC4738 ●Smallpack | SENSITRON SENSITRON SEMICONDUCTOR |  | | |
SOT-523Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●Highvoltageandhighcurrent ●ExcellenthFElinearity ●Complementaryto2SC4738 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | | |
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
TRANSISTOR(PNP) FEATURES Powerdissipation PCM:0.1W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 |  | | |
Plastic-EncapsulateTransistors FEATURES ●Highvoltageandhighcurrent. ●ExcellenthFElinearity. ●HighhFE. ●Complementaryto2sc4738. ●Smallpackage. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 |  | | |
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications ●Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) ●ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) ●HighhFE:hFE=70~400 ●Complementaryto2SC4738 ●Smallpack | SENSITRON SENSITRON SEMICONDUCTOR | | | |
AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS AudioFrequencyGeneralPurposeAmplifierApplications Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=120~400 •Complementaryto2SC4738F •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
AudiofrequencyGeneralPurposeAmplifierApplications AudiofrequencyGeneralPurposeAmplifierApplications Highvoltage:VCEO=−50V Highcurrent:IC=−150mA(max) HighhFE:hFE=120to400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Complementaryto2SC4738F | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess) AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | | |
PNPSiliconEpitaxialTransistor Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •SmallPackage •Mounting:anyposition •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | | |
AudioFrequencyGeneralPurposeAmplifierApplications AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | | |
2SA18产品属性
- 类型
描述
- 型号
2SA18
- 制造商
Distributed By MCM
- 功能描述
-120V -8A 70W Bce Toshiba Transistor 2-16F1A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
PANASON/松下 |
24+ |
NA/ |
3045 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
PANASONIC |
2016+ |
SOT-89 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
PANASONIC |
20+ |
SOT-89 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
PANASONIC/松下 |
22+ |
SOT89 |
100000 |
代理渠道/只做原装/可含税 |
|||
HITACHI |
1822+ |
TO-92 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
PANASONIC |
12+ |
SOT-89 |
3337 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Panasonic |
/ROHS.original |
NA |
15299 |
Panasonic ﹥元件 松下原装现货支持 |
|||
Panasonic |
16+ |
MiniP3-F2-B |
34300 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
|||
SOT-89 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
PANASONIC |
23+ |
SOT-89 |
63000 |
原装正品现货 |
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2SA18规格书下载地址
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- 2SA1785
- 2SA1784
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2SA18数据表相关新闻
2SA1037-R-TP
进口代理
2024-11-12SA1037AKT146Q
2SA1037AKT146Q
2023-5-262SA1930Q现货销售，欢迎来电咨询~
2SP0115T2C0-12
2022-4-152SA812-T1B-A/S6 原装正品现货
支持实单价格优势有单必成
2022-3-302SA2198
2SA2198，全新原装当天发货或门市自取0755-82732291.
2020-4-242SA1036KT146R一级代理进口原装现货尽在-宇集芯电子
2SA1036KT146R 2SA1036KT146R
2019-5-9
DdatasheetPDF页码索引
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