TRANSISTOR(VIDEOOUTPUTSTAGEINHIGHRESOLUTIONDISPLAY)

VIDEOOUTPUTSTAGEINHIGHRESOLUTIONDISPLAY ●HighTransitionFrequency:fT=600MHz(Typ.) (VCE=10V,IC=50mA) ●LowCollectorOutputCapacitance:Cob=5.0pF(Typ.) (VCB=-30V)

TRANSISTOR(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •ExcellenthFElinearity :hFE(1)=200to600(VCE=−2V,IC=−0.5A) :hFE(2)=140(min),200(typ.)(VCE=−2V,IC=−3A) •Lowcollectorsaturationvoltage :VCE(sat)=−0.5V(max)(IC=−3A,IB=−60mA)

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3PFMpackage ·Complementtotype2SC4688 APPLICATIONS ·Poweramplifierapplications ·Recommendfor40Whighfidelityaudiofrequencyamplifieroutputstage

TRANSISTOR(POWERAMPLIFIERAPPLICATIONS)

POWERAMPLIFIERAPPLICATIONS •Complementaryto2SC4688 •Recommend40WHighFidelityAudioFrequencyAmplifieroutputStage.

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3PMLpackage ·Complementtotype2SC4688 APPLICATIONS ·Poweramplifierapplications ·Recommendfor40Whighfidelityaudiofrequencyamplifieroutputstage

SiliconPNPPowerTransistors

DESCRIPTION ·WithTO-3PFMpackage ·Complementtotype2SC4688 APPLICATIONS ·Poweramplifierapplications ·Recommendfor40Whighfidelityaudiofrequencyamplifieroutputstage

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFMpackage •Complementtotype2SC4689 APPLICATIONS •Poweramplifierapplications •Recommendfor55Whighfidelityaudio frequencyamplifieroutputstage

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PMLpackage •Complementtotype2SC4689 APPLICATIONS •Poweramplifierapplications •Recommendfor55Whighfidelityaudio frequencyamplifieroutputstage

SiliconPNPPowerTransistors

DESCRIPTION •WithTO-3PFMpackage •Complementtotype2SC4689 APPLICATIONS •Poweramplifierapplications •Recommendfor55Whighfidelityaudio frequencyamplifieroutputstage

TRANSISTOR(POWERAMPLIFIERAPPLICATIONS)

poweramplifierapplications •Complementaryto2SC4689 •Recommendfor55WHighAudioFrequencyAmplifier outputStage.

SiliconPNPPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3PMLpackage ·Complementtotype2SC4690 APPLICATIONS ·Poweramplifierapplications ·Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage

TRANSISTOR(POWERAMPLIFIERAPPLICATIONS)

POWERAMPLIFIERAPPLICATIONS •Complementaryto2SC4690 •Recommendfor70WHighFidelityAudioFrequencyAmplifieroutputStage.

SiliconPNPPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3PFMpackage ·Complementtotype2SC4690 APPLICATIONS ·Poweramplifierapplications ·Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage

SiliconPNPPowerTransistors

SiliconPNPPowerTransistors DESCRIPTION ·WithTO-3PFMpackage ·Complementtotype2SC4690 APPLICATIONS ·Poweramplifierapplications ·Recommendfor70Whighfidelityaudiofrequencyamplifieroutputstage

SiliconPNPepitaxialplanertype

SiliconPNPepitaxialplanartype Forhighspeedswitching ■Features •Highspeedswitching •Lowcollector-emittersaturationvoltageVCE(sat) •SS-Minitypepackageallowingdownsizingoftheequipmentandautomaticinsertionthroughthetapepacking

High-VoltageSwitchingTransistor(Telephone,PowerSupply)(-600V,-1A)

SiliconPNPEpitaxial

Features •Excellenthighfrequencycharacteristics fT=300MHztyp •Highvoltageandlowoutputcapacitance VCEO=–200V,Cob=5.0pFtyp •Suitableforwidebandvideoamplifier Application Highfrequencyamplifier

TRANSISTOR(LOWFREQUENCY,DRIVERSTAGEAMPLIFIER,SWITCHINGAPPLICATIONS

LOWFREQUENCYAMPLIFIERAPPLICATIONS. DRIVERSTAGEAMPLIFIERAPPLICATIONS. SWITCHINGAPPLICATIONS. •ExcellenthFELinearity:hFE(2)=35(Min.),(VCE=-2V,IC=-300mA) •Complementaryto2SC4707

High-voltageSwitchingTransistor(-400V,-0.5A)

High-voltageSwitchingTransistor(Telephonepowersupply)(-400V,-0.5A) Features 1)Highbreakdownvoltage,BVCEO=-400V. 2)Lowsaturationvoltage,typicallyVCE(sat)=-0.3VatIC/IB=-100mA/-10mA. 3)Highswitchingspeed,typicallytf:1μsatIC=-100mA. 4)WideSOA(safeoperati

High-voltageSwitchingTransistor(Telephonepowersupply)

High-voltageSwitchingTransistor(Telephonepowersupply)(-400V,-0.5A) Features 1)Highbreakdownvoltage,BVCEO=-400V. 2)Lowsaturationvoltage,typicallyVCE(sat)=-0.3VatIC/IB=-100mA/-10mA. 3)Highswitchingspeed,typicallytf:1μsatIC=-100mA. 4)WideSOA(safeoperati

PNPTransistors

■Features ●Highbreakdownvoltage,BVCEO=-400V. ●Highswitchingspeed,typicallytf:1usatIC=-100mA. ●High-voltageSwitchingTransistor

Low-FrequencyGeneral-PurposeAmp,Driver,MutingCircuitApplications?

Features •Verysmall-sizedpackagepermitting2SA1813-appliedsetstobemadesmallerandslimmer. •AdoptionofFBETprocess. •HighDCcurrentgain(hFE=500to1200). •Lowcollector-to-emittersaturationvoltage(VCE(sat)≤0.3V). •HighVEBO(VEBO≥15V).

PNPEpitaxialPlanarSiliconTransistors

Features ●Verysmall-sizedpackage. ●AdoptionofFBETprocess. ●HighDCcurrentgain(hFE=500to1200). ●Lowcollector-to-emittersaturationvoltage(VCE(sat)≤0.3V). ●HighVEBO(VEBO≥15V).

Low-FrequencyGeneral-PurposeAmp,Driver,MutingCircuitApplications???

Features ·Verysmall-sizedpackagepermitting2SA1814-appliedsetstobemadesmallerandslimmer. ·AdoptionofFBETprocess. ·HighDCcurrentgain(hFE=500to1200). ·Lowcollector-to-emittersaturationvoltage(VCEO(sat)≤0.3V). ·HighVEBO(VEBO≥15V).

FM,RM,MIX,IFAmp,High-FrequencyGeneral-PurposeAmpApplications???

PNPEpitaxialPlanarSiliconTransistors Features •Highpowergain:PG=25dB(f=100MHz). •Highcutofffrequency;fT=750MHztyp. •Lowcollector-to-emittersaturationvoltage. •Complementarypairwiththe2SC4432.

SiliconPNPepitaxialplanertype

Features ●HighcollectortoemittervoltageVCEO.

TRANSISTOR(HIGHVOLTAGESWITCHING,SPEEDDC-DCCONVERTERAPPLICATIONS)

HIGHVOLTAGESWITCHINGAPPLICATIONS HIGHSPEEDDC-DCCONVERTERAPPLICATION

SiliconPNPPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage •Excellentswitchingtime •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Highvoltageswitchingapplications. •HighspeedDC-DCconverterapplication

20V/8ASwitchingApplications

20V/8ASwitchingApplications Features ·AdoptionofMBITprocess. ·Lowsaturationvoltage. ·Fastswicthingspeed. ·Largecurrentcapacity. ·Itispossibletomakeappliancesmorecompactbecauseit’sheightonboardis9.5mm. ·Meetsradialtaping.

50V/5ASwitchingApplications

50V/5ASwitchingApplications Features •Lowcollector-to-emittersaturationvoltage. •HighGain-BandwidthProduct. •ExcellentlinearityofDCCurrentGain. •Fastswitchingspeed. Applications •Relaydrivers,high-speedinverters,converters,andothergeneralhigh-currentswitchingapp

50V/8ASwitchingApplications

50V/8ASwitchingApplications Applications ·Relaydrivers,high-speedinverters,converters,andothergeneralhigh-currentswitchingapplications. Features ·Lowcollector-to-emittersaturationvoltage. ·HighGain-BandwidthProduct. ·ExcellentlinearityofDCCurrent

100V/3ASwitchingApplications

100V/3ASwitchingApplications Features ·Lowcollector-to-emittersaturationvoltage. ·HighGain-BandwidthProduct. ·ExcellentlinearityofDCCurrentGain. ·Fastswitchingspeed. Applications ·Relaydrivers,high-speedinverters,converters,andothergeneralhigh-currentswitchin

100V/4ASwitchingApplications

100V/4ASwitchingApplications Features ·Lowcollector-to-emittersaturationvoltage. ·HighGain-BandwidthProduct. ·ExcellentlinearityofDCCurrentGain. ·Fastswitchingspeed. Applications ·Relaydrivers,high-speedinverters,converters,andothergeneralhigh-curren

TransistorsforTVDisplayVideoOutputUse

TransistorsforTVDisplayVideoOutputUse

TransistorsforTVDisplayVideoOutputUse

TransistorsforTVDisplayVideoOutputUse

HighVoltageDriverApplications?????????????

High-VoltageDriverApplications Features •Largecurrentcapacity(IC=2A). •Highbreakdownvoltage(VCEO≥400V). •Possibletoofferthe2SA1830/2SC4734devicesinatapereelpackaging,whichfacilitatesautomaticinsertion.

High-VoltageAmp,High-VoltageSwitching

High-VoltageAmplifier,High-VoltageSwitchingApplications Features ·Highbreakdownvoltage(VCEOmin=–800V). ·SmallCob(Cobtyp=1.6pF). ·Highreliabirity(AdoptionofHVPprocesses).

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications ●Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) ●ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) ●HighhFE:hFE=70~400 ●Complementaryto2SC4738 ●Smallpack

Plastic-EncapsulateTransistors

FEATURES ●Highvoltageandhighcurrent. ●ExcellenthFElinearity. ●HighhFE. ●Complementaryto2sc4738. ●Smallpackage.

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

SOT-523Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Highvoltageandhighcurrent ●ExcellenthFElinearity ●Complementaryto2SC4738

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

TRANSISTOR(PNP)

FEATURES Powerdissipation PCM:0.1W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TRANSISTOR(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

SiliconPNPEpitaxialTypeTransistor

■Features ●Highvoltageandhighcurrent ●ExcellenthFElinearity ●Complementaryto2SC4738

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PCM:0.1W(Tamb=25℃) Collectorcurrent ICM:-0.15A Collector-basevoltage V(BR)CBO:-50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

PNPTRANSISTOR

FEATURES: Highvoltageandhighcurrent ExcellenthFElinearity HighhFE Complementaryto2SA1832

PNPSiliconPlasticEncapsulatedTransistor

FEATURES ●HighVoltageandHighCurrent ●ExcellenthFELinearity ●Complementaryto2SC4738

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications ●Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) ●ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA) =0.95(typ.) ●HighhFE:hFE=70~400 ●Complementaryto2SC4738 ●Smallpack

AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERAPPLICATIONS

AudioFrequencyGeneralPurposeAmplifierApplications Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=120~400 •Complementaryto2SC4738F •Smallpackage

AudiofrequencyGeneralPurposeAmplifierApplications

AudiofrequencyGeneralPurposeAmplifierApplications Highvoltage:VCEO=−50V Highcurrent:IC=−150mA(max) HighhFE:hFE=120to400 ExcellenthFElinearity :hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) Complementaryto2SC4738F

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

PNPSiliconEpitaxialTransistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •SmallPackage •Mounting:anyposition •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

PNPSiliconEpitaxialTransistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •SmallPackage •Mounting:anyposition •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Halogenfreeavailableuponrequestbyaddingsuffix-HF

AudioFrequencyGeneralPurposeAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V,IC=−150mA(max) •ExcellenthFElinearity:hFE(IC=−0.1mA)/hFE(IC=−2mA)=0.95(typ.) •HighhFE:hFE=70to400 •Complementaryto2SC4738 •Smallpackage

LowVce(sat)Transistor(Strobeflash)(-20V,-10A)

Features 1)SuitableforMiddlePowerDriver 2)ComplementaryNPNTypes:2SC5001 3)LowVCE(sat) VCE(sat)=-0.25V(Max.)(IC/IB=-4A/-0.05A) 4)Largecollectorcurrent:IC=-10A(DCMax.) 5)LeadFree/RoHSCompliant. Applications Motordriver,LEDdriver Powersupply,stro

PNPSILICONEPITAXIALTRANSISTOR

DESCRIPTION The2SA1836isPNPsiliconepitaxialtransistor. FEATURES •HighDCcurrentgain:hFE2=200TYP. •Highvoltage:VCEO=−50V

PNPSILICONEPITAXIALTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR DESCRIPTION The2SA1836isPNPsiliconepitaxialtransistor. FEATURES •HighDCcurrentgain:hFE2=200TYP. •Highvoltage:VCEO=−50V •Canbeautomaticallymounted