TRANSISTOR (VIDEO OUTPUT STAGE IN HIGH RESOLUTION DISPLAY)

VIDEO OUTPUT STAGE IN HIGH RESOLUTION DISPLAY ● High Transition Frequency : fT = 600 MHz (Typ.) (VCE = 10 V, IC = 50 mA) ● Low Collector Output Capacitance : Cob = 5.0 pF (Typ.) (VCB = -30 V)

TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • Excellent hFE linearity : hFE (1) = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A) • Low collector saturation voltage : VCE (sat) = −0.5 V (max) (IC = −3 A, IB = −60 mA)

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -10V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Fast switching speed ·Complementary to 2SC4681 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -10V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Fast switching speed ·Complementary to 2SC4681 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -10V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Fast switching speed ·Complementary to 2SC4681 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -10V(Min) ·DC Current Gain- : hFE= 200(Min)@ IC= -0.5A ·Fast switching speed ·Complementary to 2SC4681 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PML package ·Complement to type 2SC4688 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PFM package ·Complement to type 2SC4688 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PFM package ·Complement to type 2SC4688 APPLICATIONS ·Power amplifier applications ·Recommend for 40W high fidelity audio frequency amplifier output stage

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICATIONS • Complementary to 2SC4688 • Recommend 40W High Fidelity Audio Frequency Amplifier output Stage.

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

power amplifier applications • Complementary to 2SC4689 • Recommend for 55W High Audio Frequency Amplifier output Stage.

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFM package • Complement to type 2SC4689 APPLICATIONS • Power amplifier applications • Recommend for 55W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PFM package • Complement to type 2SC4689 APPLICATIONS • Power amplifier applications • Recommend for 55W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PML package • Complement to type 2SC4689 APPLICATIONS • Power amplifier applications • Recommend for 55W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3PML package ·Complement to type 2SC4690 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFM package ·Complement to type 2SC4690 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

Silicon PNP Power Transistors

Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFM package ·Complement to type 2SC4690 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICATIONS • Complementary to 2SC4690 • Recommend for 70 W High Fidelity Audio Frequency Amplifier output Stage.

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For high speed switching ■ Features • High speed switching • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package allowing downsizing of the equipment and automatic insertion through the tape packing

丝印代码：TL；High-Voltage Switching Transistor (Telephone, Power Supply) (-600V, -1A)

Silicon PNP Epitaxial

Features • Excellent high frequency characteristics fT = 300 MHz typ • High voltage and low output capacitance VCEO = –200 V, Cob = 5.0 pF typ • Suitable for wide band video amplifier Application High frequency amplifier

TRANSISTOR (LOW FREQUENCY, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS

LOW FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • Excellent hFE Linearity : hFE(2)=35(Min.), (VCE= -2V, IC= -300mA) • Complementary to 2SC4707

丝印代码：AJ*；High-voltage Switching Transistor (Telephone power supply)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

丝印代码：AJ*；High-voltage Switching Transistor (-400V, -0.5A)

High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A) Features 1) High breakdown voltage, BVCEO= -400V. 2) Low saturation voltage, typically VCE (sat) = -0.3V at IC / IB = -100mA / -10mA. 3) High switching speed, typically tf : 1μs at IC = -100mA. 4) Wide SOA (safe operati

丝印代码：AJ*；PNP Transistors

■ Features ● High breakdown voltage, BVCEO=-400V. ● High switching speed, typically tf :1us at IC =-100mA. ●High-voltage Switching Transistor

Silicon PNP Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat): -1.0V(Max) @IC= -0.1A APPLICATIONS ·High-voltage Switching Transistor ·Telephone power supply

PNP Epitaxial Planar Silicon Transistors

Features ● Very small-sized package. ● Adoption of FBET process. ● High DC current gain (hFE=500 to 1200). ● Low collector-to-emitter saturation voltage (VCE(sat) ≤ 0.3V). ● High VEBO (VEBO ≥ 15V).

Low-Frequency General-Purpose Amp, Driver, Muting Circuit Applications?

Features • Very small-sized package permitting 2SA1813-applied sets to be made smaller and slimmer. • Adoption of FBET process. • High DC current gain (hFE=500 to 1200). • Low collector-to-emitter saturation voltage (VCE(sat)≤0.3V). • High VEBO (VEBO≥15V).

Low-Frequency General-Purpose Amp, Driver, Muting Circuit Applications???

Features · Very small-sized package permitting 2SA1814-applied sets to be made smaller and slimmer. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage (VCEO(sat)≤0.3V). · High VEBO(VEBO≥15V).

FM,RM,MIX,IF Amp, High-Frequency General-Purpose Amp Applications???

PNP Epitaxial Planar Silicon Transistors Features • High power gain : PG=25dB (f=100MHz). • High cutoff frequency ; fT=750MHz typ. • Low collector-to-emitter saturation voltage. • Complementary pair with the 2SC4432.

Silicon PNP epitaxial planer type

Features ● High collector to emitter voltage VCEO.

TRANSISTOR (HIGH VOLTAGE SWITCHING, SPEED DC-DC CONVERTER APPLICATIONS)

HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATION

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage • Excellent switching time • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • High voltage switching applications. • High speed DC-DC converter application

20V/8A Switching Applications

20V/8A Switching Applications Features · Adoption of MBIT process. · Low saturation voltage. · Fast swicthing speed. · Large current capacity. · It is possible to make appliances more compact because it’s height on board is 9.5mm. · Meets radial taping.

50V/5A Switching Applications

50V/5A Switching Applications Features • Low collector-to-emitter saturation voltage. • High Gain-Bandwidth Product. • Excellent linearity of DC Current Gain. • Fast switching speed. Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching app

50V/8A Switching Applications

50V/8A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current

100V/3A Switching Applications

100V/3A Switching Applications Features · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. Applications · Relay drivers, high-speed inverters, converters, and other general high-current switchin

100V/4A Switching Applications

100V/4A Switching Applications Features · Low collector-to-emitter saturation voltage. · High Gain-Bandwidth Product. · Excellent linearity of DC Current Gain. · Fast switching speed. Applications · Relay drivers, high-speed inverters, converters, and other general high-curren

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

High Voltage Driver Applications?????????????

High-Voltage Driver Applications Features • Large current capacity (IC=2A). • High breakdown voltage (VCEO≥400V). • Possible to offer the 2SA1830/2SC4734 devices in a tape reel packaging, which facilitates automatic insertion.

High-Voltage Amp, High-Voltage Switching

High-Voltage Amplifier, High-Voltage Switching Applications Features · High breakdown voltage (VCEOmin=–800V). · Small Cob(Cobtyp=1.6pF). · High reliabirity (Adoption of HVP processes).

TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

PNP TRANSISTOR

FEATURES: High voltage and high current Excellent hFE linearity High h FE Complementary to 2SA1832

丝印代码：SG；Plastic-Encapsulate Transistors

FEATURES ● High voltage and high current. ● Excellent hFE linearity. ● High hFE. ● Complementary to 2sc4738. ● Small package.

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High voltage and high current ● Excellent hFE linearity ● Complementary to 2SC4738

Silicon PNP Epitaxial Type Transistor

■ Features ● High voltage and high current ● Excellent hFE linearity ● Complementary to 2SC4738

PNP Silicon Plastic Encapsulated Transistor

FEATURES ● High Voltage and High Current ● Excellent hFE Linearity ● Complementary to 2SC4738

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications ● High voltage and high current: VCEO = −50 V, IC = −150 mA (max) ● Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) =0.95 (typ.) ● High hFE: hFE = 70~400 ● Complementary to 2SC4738 ● Small pack

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 0.1 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications ● High voltage and high current: VCEO = −50 V, IC = −150 mA (max) ● Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) =0.95 (typ.) ● High hFE: hFE = 70~400 ● Complementary to 2SC4738 ● Small pack

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS

Audio Frequency General Purpose Amplifier Applications High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 120~400 • Complementary to 2SC4738F • Small package

Audio frequency General Purpose Amplifier Applications

Audio frequency General Purpose Amplifier Applications High voltage: VCEO = −50 V High current: IC = −150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.) Complementary to 2SC4738F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

Audio Frequency General Purpose Amplifier Applications

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70 to 400 • Complementary to 2SC4738 • Small package

PNP Silicon Epitaxial Transistor

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Small Package • Mounting:any position • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Halogen free available upon request by adding suffix -HF