SILICON POWER TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC converters, motor drivers, solenoid

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Thi

SILICON POWER TRANSISTOR

文件：374.5 Kbytes Page：7 Pages

isc Silicon PNP Power Transistor

DESCRIPTION • Available for high-current control in small dimension • Low collector saturation voltage: VCE(sat)= -0.3V(Max)@ IC= -3A • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Thi

SILICON POWER TRANSISTOR

文件：374.5 Kbytes Page：7 Pages