封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：TRANS PNP 40V 0.5A SOT23 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD????

FEATURES ● High fT : fT = 400 MHz ● Complementary to 2SC3739

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Silicon Epitaxia

■ Features ● High fT : fT =400MHz ● Complementary to 2SC3739

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

SILICON TRANSISTOR

HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD