FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

DESCRIPTION 2SA1235 is a super mini silicon NPN epitaxial type transistor designed with high collector current,small Vce(sat). Complementary with 2SC3440. FEATURE ● Low collector to emitter saturation voltage. VCE(sat)=-0.2V typ ● Excellent linearity of DC forward current gain. ● Super mini

Silicon PNP Epitaxia

Features ● Low collector to emitter saturation voltage. ● Excellent linearity nof DC forward current gain. ● Super mini package for easy mounting. ● High collector current. ● High gain band width product.

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Low collector to emitter saturation voltage, excellent linearity of DC forward current Gain, high collector current, high gain band width product. Applications Small type motor drive, relay drive, power supply.

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

文件：193.21 Kbytes Page：3 Pages