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2SA135晶体管资料
2SA135别名:2SA135三极管、2SA135晶体管、2SA135晶体三极管
2SA135生产厂家:日本日立公司
2SA135制作材料:Ge-PNP
2SA135性质:调频 (FM)
2SA135封装形式:直插封装
2SA135极限工作电压:20V
2SA135最大电流允许值:0.01A
2SA135最大工作频率:150MHZ
2SA135引脚数:4
2SA135最大耗散功率:
2SA135放大倍数:
2SA135图片代号:C-36
2SA135vtest:20
2SA135htest:150000000
- 2SA135atest:0.01
2SA135wtest:0
2SA135代换 2SA135用什么型号代替:AF106,AF121,AF124,AF125,AF200,AF201,AF306,2N3323,2N3324,2N3325,2SA213,2DSA214,2SA215,2SA216,3AG54D,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Silicon PNP Epitaxial Application • Low frequency low noise amplifier • HF amplefier | HitachiHitachi Semiconductor 日立日立公司 | |||
Transistors for TV Display Video Output Use Transistors for TV Display Video Output Use | SANYO 三洋 | |||
Ultrahigh-Definition CRT Display Video Output Applications Ultrahigh-Definition CRT DisplayVideo Output Applications Features • High breakdown voltage : VCEO≤200V. • Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2pF (NPN), 1.7pF (PNP). • Adoption of FBET process. Applications • Color TV chroma output, high-v | SANYO 三洋 | |||
Ultrahigh-Definition CRT Display Video Output Applications? Ultrahigh-Definition CRT Display Video Output Applications Features • High breakdown voltage : VCEO≤300V. • Excellent high frequency characteristics : Cre=1.8pF(typ). • Adoption of MBIT process. Applications • Ultrahigh-definition CRT display. • Color TV chroma output, high-voltage driver a | SANYO 三洋 | |||
Transistors for TV Display Video Output Use Transistors for TV Display Video Output Use | SANYO 三洋 | |||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage. ·Short switching time. APPLICATIONS ·Various inductance lamp drivers for electrical equipment. ·Inverters, converters ·Power amplifier ·High-speed switching | SAVANTIC | |||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage. ·Short switching time. APPLICATIONS ·Various inductance lamp drivers for electrical equipment. ·Inverters, converters ·Power amplifier ·High-speed switching | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·Low collector saturation voltage. ·Short switching time. APPLICATIONS ·Various inductance lamp drivers for electrical equipment. ·Inverters, converters ·Power amplifier ·High-speed switching | ISC 无锡固电 | |||
Silicon PNP Power Transistors DESCRIPTION·With TO-220 package ·Low collector saturation voltage. ·Short switching time. APPLICATIONS ·Various inductance lamp drivers for electrical equipment. ·Inverters, converters ·Power amplifier ·High-speed switching | SYC | |||
TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) Audio Power Amplifier Applications • Low saturation voltage: VCE (sat) = −0.32 V (typ.) (IC = −500 mA, IB = −50 mA) • High collector power dissipation: PC = 1.2 W (Ta = 25°C) • Complementary to 2SC3419 | TOSHIBA 东芝 | |||
TRANSISTOR (STROBE FLASH, AUDIO POWER AMPLIFIER APPLICATIONS) 2SA1357, A1357 Toshiba Datasheet PDF Informations | TOSHIBA 东芝 | |||
Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) Collector current ICM : -5 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | |||
isc Silicon PNP Power Transistor DESCRIPTION • High Collector Current-IC= -5.0A • DC Current Gain- : hFE= 70(Min)@IC= -4A • Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A APPLICATIONS • Strobe flash applications. • Audio power amplifier applications. | ISC 无锡固电 | |||
Silicon PNP transistor in a TO-126F Plastic Package Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features High IC, low VCE(sat). Applications Strobe flash applications, audio power amplifier applications. | FOSHAN 蓝箭电子 | |||
Silicon PNP Power Transistor DESCRIPTION • High Collector Current-IC= -5.0A • DC Current Gain- : hFE= 70(Min)@IC= -4A • Low Saturation Voltage : VCE(sat)= -1.0V(Max)@IC= -4A APPLICATIONS • Strobe flash applications. • Audio power amplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) Collector current ICM : -5 A Collector-base voltage V(BR)CBO : -35 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO = -120V(Min) • Complement to Type 2SC3421 APPLICATIONS • Designed for audio frequency poweramplifier applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
isc Silicon PNP Power Transistor DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO = -120V(Min) • Complement to Type 2SC3421 APPLICATIONS • Designed for audio frequency poweramplifier applications. • Suitable for driver of 60 to 80 Watts audio amplifier. | ISC 无锡固电 | |||
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS) Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage | TOSHIBA 东芝 | |||
isc Silicon PNP Power Transistor DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio frequency power amplifier ap | ISC 无锡固电 | |||
TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER. LOW SPEED SWITCHING) Audio Frequency Power Amplifier Low-Speed Switching • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SC3422. | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC3422 ·Good linearity of hFE APPLICATIONS ·Audio frequency amplifier ·Low speed switching ·Suitable for output stage of 5W car radio and car stereo | JMNIC 锦美电子 | |||
Silicon PNP transistor in a TO-126F Plastic Package Description Silicon PNP transistor in a TO-126F Plastic Package. Features Good linearity of hFE ,complementary to 2SC3422. Applications Audio frequency power amplifier and low speed switching applications. | FOSHAN 蓝箭电子 | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC3422 ·Good linearity of hFE APPLICATIONS ·Audio frequency amplifier ·Low speed switching ·Suitable for output stage of 5W car radio and car stereo | SAVANTIC | |||
Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SC3422 ·Good linearity of hFE APPLICATIONS ·Audio frequency amplifier ·Low speed switching ·Suitable for output stage of 5W car radio and car stereo | ISC 无锡固电 | |||
Silicon PNP Epitaxial 文件:139.38 Kbytes Page:6 Pages | RENESAS 瑞萨 | |||
Transistor-Bipolar Small Signal Transistors | RENESAS 瑞萨 | |||
Ultrahigh-Definition CRT Display Video Output Applications | ONSEMI 安森美半导体 | |||
Complement to Type 2SC3416 文件:109.91 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Silicon PNP Power Transistor 文件:183.07 Kbytes Page:2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Ultrahigh-Definition CRT Display Video Output Applications | ONSEMI 安森美半导体 | |||
Silicon PNP Power Transistors 文件:154.02 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Silicon PNP Power Transistors 文件:154.02 Kbytes Page:3 Pages | JMNIC 锦美电子 | |||
Audio Power Amplifier Applications 文件:136.37 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Audio Power Amplifier Applications 文件:136.37 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Strobe Flash Applications Audio Power Amplifier Applications 文件:140 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Strobe Flash Applications Audio Power Amplifier Applications 文件:140 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Audio Frequency Power Amplifier Applications 文件:120.84 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Audio Frequency Power Amplifier Applications 文件:120.84 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Audio Frequency Power Amplifier Low-Speed Switching 文件:130.18 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors 文件:205.91 Kbytes Page:4 Pages | JMNIC 锦美电子 | |||
Audio Frequency Power Amplifier Low-Speed Switching 文件:130.18 Kbytes Page:4 Pages | TOSHIBA 东芝 | |||
Silicon PNP Power Transistors 文件:205.91 Kbytes Page:4 Pages | JMNIC 锦美电子 |
2SA135产品属性
- 类型
描述
- 型号
2SA135
- 制造商
Distributed By MCM
- 功能描述
SUB ONLY SANYO TRANS. TO-126 -300V -.1A 1.2W ECB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA/东芝 |
25+ |
TO-126F |
10000 |
全新原装现货库存 |
|||
TOSHIBA/东芝 |
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
|||
TOS |
24+ |
原厂封装 |
5500 |
原装现货假一罚十 |
|||
TOSHIBA/东芝 |
24+ |
NA/ |
3100 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
25+ |
TO126 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
TOSHIBA |
20+ |
TO-126F |
38900 |
原装优势主营型号-可开原型号增税票 |
|||
TOSHIBA |
24+/25+ |
1980 |
原装正品现货库存价优 |
||||
ST |
23+ |
CAN to-39 |
16900 |
正规渠道,只有原装! |
|||
NEC |
24+ |
CAN3 |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
PANASONIC/松下 |
22+ |
TO-92 |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
2SA135芯片相关品牌
2SA135规格书下载地址
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2SA135数据表相关新闻
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