TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)

Audio Frequency Power Amplifier Applications • Complementary to 2SC3421 • Suitable for driver of 60 to 80 watts • High breakdown voltage

isc Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO = -120V(Min) • Complement to Type 2SC3421 APPLICATIONS • Designed for audio frequency poweramplifier applications. • Suitable for driver of 60 to 80 Watts audio amplifier.

Silicon PNP Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage : V(BR)CEO = -120V(Min) • Complement to Type 2SC3421 APPLICATIONS • Designed for audio frequency poweramplifier applications.

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Power transistor for high-speed switching applications

Application Scope：Driver\nPolarity：PNP\nComplementary Product：2SC3421\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -1 A \nCollector power dissipation PC 10 W \nCollector-emitter voltage VCEO -120 V ;

Audio Frequency Power Amplifier Applications

文件：120.84 Kbytes Page：4 Pages

丝印代码：DPAK；isc Silicon PNP Power Transistor

DESCRIPTION • With TO-252(DPAK) packaging • Excellent linearity of hFE • Low collector-to-emitter saturation voltage • Fast switching speed • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for audio frequency power amplifier ap

Audio Frequency Power Amplifier Applications

文件：120.84 Kbytes Page：4 Pages