Silicon PNP Epitaxial Type

FEATURES ● Excellent hFE linearity. ● Low collector saturation voltage. ● High power dissipation. APPLICATIONS ● Strobe Flash Applications. ● Medium Power Amplifier Applications.

isc Silicon PNP Power Transistor

DESCRIPTION • hFE=100-320(IC= -0.5A; VCE= -2V) • hFE=70(Min)(IC= -4A; VCE= -2V) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0V(Max)( IC= -4A; IB= -0.1A) •·High Power Dissipation- : PC= 10W@TC=25℃ ,PC= 10W@Ta=25℃ • Minimum Lot-to-Lot variations for robust device performance and

Silicon PNP transistor in a TO-252 Plastic Package.

Descriptions Silicon PNP transistor in a TO-252 Plastic Package. Features Excellent hFE linearity, low VCE(sat), high PC. Applications Strobe flash applications, medium power amplifier applications.

Strobe Flash Applications Medium Power Amplifier Applications

文件：161.07 Kbytes Page：4 Pages

Strobe Flash Applications Medium Power Amplifier Applications

文件：158 Kbytes Page：4 Pages