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FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1235 is a mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max（@Ic=-100mA,IB=-10mA） ● Excellent

Silicon PNP Epitaxial

Features Small collector to emitter saturation voltage. Excelent lineary DC forward current gain. Super mini package for easy mounting.

三极管 / 通用三极管

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon Epitaxial Planar Transistor

FEATURES ● Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). ● Excellent lineary DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● PNP epitaxial type transistor designed for low frequency. ● Voltage amplify application.

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)

FOR LOW FREQUENCY AMPLIFY APPLICATION FEATURE ・ Super mini package for easy mounting ・Excellent linearity of DC forward gain ・Small collector to emitter saturation voltage VCE(sat)=-0.3V max APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify appli