PNP TRANSISTOR

[DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD.] TRANSISTOR（ PNP ） FEATURES Power dissipation PCM: 0.2 W（Tamb=25℃） Collector current ICM: -0.2 A Collector-base voltage V (BR) CBO: -60 V Operating and storage junction temperature range TJ，Tstg: -55℃ t

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

丝印代码：ME；Silicon Epitaxial Planar Transistor

FEATURES ● Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). ● Excellent lineary DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● PNP epitaxial type transistor designed for low frequency. ● Voltage amplify application.

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)

FOR LOW FREQUENCY AMPLIFY APPLICATION FEATURE ・ Super mini package for easy mounting ・Excellent linearity of DC forward gain ・Small collector to emitter saturation voltage VCE(sat)=-0.3V max APPLICATION For Hybrid IC,small type machine low frequency voltage Amplify appli

TRANSISTOR(PNP)

FEATURES Low Collector Current Low Collector Power Dissipation

SOT-23 Plastic-Encapsulate Transistors

FEATURES  Low Collector Current  Low Collector Power Dissipation

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

PNP Silicon Plastic Encapsulated Transistor

FEATURES Low Collector Current Low Collector Power Dissipation

SOT-23 Plastic-Encapsulate Transistors

FEATURES Power dissipation PCM : 0.2 W（ Tamb=25℃） Collector current ICM: -0.2 A Collector-base voltage V(BR) CBO: -60 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃

丝印代码：ME/MF/MG；PNP epitaxial type transistor designed for low frequency.

FEATURES ● Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). ● Excellent lineary DC forward current gain. ● Super mini package for easy mounting. APPLICATIONS ● PNP epitaxial type transistor designed for low frequency. ● Voltage amplify application.

Plastic-Encapsulate Transistors

Features  Low Collector Current  Low Collector Power Dissipation

Small Signal Transistor

双极型晶体管

50V,0.2A,General Purpose PNP Bipolar Transistor

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP)

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PNP Plastic-Encapsulate Transistors

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丝印代码：ME；Silicon Epitaxial Planar Transistor

文件：87.79 Kbytes Page：3 Pages

丝印代码：ME；Silicon Epitaxial Planar Transistor

文件：135.88 Kbytes Page：3 Pages

Silicon Epitaxial Planar Transistor

文件：129.41 Kbytes Page：3 Pages

Silicon Epitaxial Planar Transistor

文件：135.88 Kbytes Page：3 Pages

PNP Silicon Plastic Encapsulated Transistor

文件：109.17 Kbytes Page：1 Pages

PNP TRANSISTOR

文件：136.14 Kbytes Page：1 Pages

Silicon Epitaxial Planar Transistor

文件：87.79 Kbytes Page：3 Pages

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)

FOR LOW FREQUENCY AMPLIFY APPLICATION DESCRIPTION 2SA1235 is a mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max（@Ic=-100mA,IB=-10mA） ● Excellent

Silicon PNP Epitaxial

Features Small collector to emitter saturation voltage. Excelent lineary DC forward current gain. Super mini package for easy mounting.