2SA121晶体管资料

  • 2SA121别名:2SA121三极管、2SA121晶体管、2SA121晶体三极管

  • 2SA121生产厂家:日本索尼公司

  • 2SA121制作材料:Ge-PNP

  • 2SA121性质:调频 (FM)

  • 2SA121封装形式

  • 2SA121极限工作电压:15V

  • 2SA121最大电流允许值:0.002A

  • 2SA121最大工作频率:100MHZ

  • 2SA121引脚数

  • 2SA121最大耗散功率

  • 2SA121放大倍数

  • 2SA121图片代号:NO

  • 2SA121vtest:15

  • 2SA121htest:100000000

  • 2SA121atest:0.002

  • 2SA121wtest:0

  • 2SA121代换 2SA121用什么型号代替:AF106,AF124,AF125,AF306,2N3323,2N3324,2N3325,2AS340,2SA341,2SA342,3AG53C,

2SA121价格

参考价格:¥0.7859

型号:2SA1213-Y-TP 品牌:MCC 备注:这里有2SA121多少钱,2025年最近7天走势,今日出价,今日竞价,2SA121批发/采购报价,2SA121行情走势销售排行榜,2SA121报价。
型号 功能描述 生产厂家 企业 LOGO 操作

HIGH VOLTAGE SWITCHING, AF 150W PREDRIVER APPLICATIONS

High Voltage Switching, AF 150W predriver Applications Features Adoption of FBET process High breakdown voltage Good linearity of hFE and small Cob Fast switching speed

SANYO

三洋

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

YFWDIODE

佑风微

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

TOSHIBA

东芝

PNP Silicon Medium Power Transistor

*Features Low power dissipation 0.5W Collector Current -2A *Stucture Epitaxial planar type. PNP silicon transistor.

SECOS

喜可士

Power Switching Applications

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

KEXIN

科信电子

TRANSISTOR(PNP)

FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

HTSEMI

金誉半导体

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

DGNJDZ

南晶电子

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SC2873. Applications Power amplifier and switching applications.

FOSHAN

蓝箭电子

Power Amplifier Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

TOSHIBA

东芝

Silicon Planar Epitaxial Transistor

FEATURES ● Low saturation voltage ● High speed switching time ● Small flat package ● PC=1.0 to 2.0W(mounted on ceramic substrate) ● Complementary to 2SC2873

BILIN

银河微电

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

JIANGSU

长电科技

TRANSISTOR竊늁NP 竊

FEATURES Power dissipation PCM : 0.5 W ( Tamb=25℃) Collector current ICM: -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

KOOCHIN

灏展电子

Plastic-Encapsulate Transistors

FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Plastic-Encapsulate Transistors

FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Plastic-Encapsulate Transistors

FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

YFWDIODE

佑风微

PNP Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) • Small flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • High Speed Switching Time : tstg=1.0µs(typ.) • Epoxy meets UL

MCC

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

PNP Epitaxial Transistor

VOLTAGE 50 Volts CURRENT 2 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.0 to 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power

CHENMKO

力勤

Power Amplifier Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

TOSHIBA

东芝

PNP Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) • Small flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • High Speed Switching Time : tstg=1.0µs(typ.) • Epoxy meets UL

MCC

PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

YFWDIODE

佑风微

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

Silicon PNP Power Transistors

DESCRIPTION • With MT-200 package • Complement to type 2SC2921 APPLICATIONS • Audio and general purpose

ISC

无锡固电

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With MT-200 package • Complement to type 2SC2921 APPLICATIONS • Audio and general purpose

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With MT-200 package • Complement to type 2SC2921 APPLICATIONS • Audio and general purpose

SAVANTIC

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SC2921

WINGS

永盛电子

POWER TRANSISTORS(15A,160V,150W)

. . . designed for use in general-purpose amplifier and switching application. FEATURES: * Recommend for 125W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SC2921

MOSPEC

统懋

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) Application : Audio and General Purpose

Sanken

三垦

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) Application : Audio and General Purpose

Sanken

三垦

POWER TRANSISTORS(17A,180V,200W)

HIGH-POWER PNP SILICON POWER TRANSISTORS 17 AMPERE POWER TRANSISOTR 180 VOLTS 200 WATTS

MOSPEC

统懋

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SC2922

WINGS

永盛电子

isc Silicon PNP Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2922 APPLICATIONS ·Designed for audio and general purpose applications.

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SC2922 APPLICATIONS ·Audio and general purpose

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SC2922 APPLICATIONS ·Audio and general purpose

JMNIC

锦美电子

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo

JMNIC

锦美电子

Power Amplifier Applications Power Switching Applications

文件:200.71 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon Planar Epitaxial Transistor

文件:146.29 Kbytes Page:4 Pages

BILIN

银河微电

Power Amplifier Applications Power Switching Applications

文件:169.57 Kbytes Page:5 Pages

TOSHIBA

东芝

晶体管

JSCJ

长晶科技

Power transistor for high-speed switching applications

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:169.57 Kbytes Page:5 Pages

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:200.71 Kbytes Page:5 Pages

TOSHIBA

东芝

PNP TRANSISTOR

文件:75.63 Kbytes Page:1 Pages

WINNERJOIN

永而佳

PNP Transistors

文件:1.66601 Mbytes Page:3 Pages

KEXIN

科信电子

Silicon Planar Epitaxial Transistor

文件:146.29 Kbytes Page:4 Pages

BILIN

银河微电

General Purpose Transistor

COMCHIP

典琦

PNP Silicon Epitaxial Transistors

文件:552.4 Kbytes Page:4 Pages

MCC

PNP Transistors

文件:1.66601 Mbytes Page:3 Pages

KEXIN

科信电子

2SA121产品属性

  • 类型

    描述

  • 型号

    2SA121

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    TRANSISTOR, SI-P, 50V, 2A, .5W, 120 MHZ - Tape and Reel

  • 制造商

    Toshiba

  • 功能描述

    PNP

更新时间:2025-12-25 11:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SANKEN
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
SANKEN
25+
NA
880000
明嘉莱只做原装正品现货
Sanken Electric
23+
TO-18
12800
原装正品代理商最优惠价格 现货或订货
SANKEN/三肯
23+
MT-200
50000
全新原装正品现货,支持订货
SANKEN
25+23+
MT-200
18020
绝对原装正品全新进口深圳现货
SANKEN
2023+
MT200
50000
原装现货
Sanken
22+
MT-200
20000
公司只有原装 品质保证
SANKEN
25+
TO-3P
10000
原厂原装,价格优势
24+
MT-200
10000
全新
SANKEN
24+
MT-200
4000
只做原装正品现货 欢迎来电查询15919825718

2SA121数据表相关新闻