2SA121晶体管资料

  • 2SA121别名:2SA121三极管、2SA121晶体管、2SA121晶体三极管

  • 2SA121生产厂家:日本索尼公司

  • 2SA121制作材料:Ge-PNP

  • 2SA121性质:调频 (FM)

  • 2SA121封装形式

  • 2SA121极限工作电压:15V

  • 2SA121最大电流允许值:0.002A

  • 2SA121最大工作频率:100MHZ

  • 2SA121引脚数

  • 2SA121最大耗散功率

  • 2SA121放大倍数

  • 2SA121图片代号:NO

  • 2SA121vtest:15

  • 2SA121htest:100000000

  • 2SA121atest:0.002

  • 2SA121wtest:0

  • 2SA121代换 2SA121用什么型号代替:AF106,AF124,AF125,AF306,2N3323,2N3324,2N3325,2AS340,2SA341,2SA342,3AG53C,

2SA121价格

参考价格:¥0.7859

型号:2SA1213-Y-TP 品牌:MCC 备注:这里有2SA121多少钱,2025年最近7天走势,今日出价,今日竞价,2SA121批发/采购报价,2SA121行情走势销售排行榜,2SA121报价。
型号 功能描述 生产厂家 企业 LOGO 操作

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH VOLTAGE SWITCHING, AF 150W PREDRIVER APPLICATIONS

High Voltage Switching, AF 150W predriver Applications Features Adoption of FBET process High breakdown voltage Good linearity of hFE and small Cob Fast switching speed

SANYO

三洋

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

TOSHIBA

东芝

PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

YFWDIODE

佑风微

Power Amplifier Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

TOSHIBA

东芝

Silicon Planar Epitaxial Transistor

FEATURES ● Low saturation voltage ● High speed switching time ● Small flat package ● PC=1.0 to 2.0W(mounted on ceramic substrate) ● Complementary to 2SC2873

BILIN

银河微电

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

JIANGSU

长电科技

TRANSISTOR竊늁NP 竊

FEATURES Power dissipation PCM : 0.5 W ( Tamb=25℃) Collector current ICM: -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

KOOCHIN

灏展电子

PNP Silicon Medium Power Transistor

*Features Low power dissipation 0.5W Collector Current -2A *Stucture Epitaxial planar type. PNP silicon transistor.

SECOS

喜可士

Power Switching Applications

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

KEXIN

科信电子

TRANSISTOR(PNP)

FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

HTSEMI

金誉半导体

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

DGNJDZ

南晶电子

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SC2873. Applications Power amplifier and switching applications.

FOSHAN

蓝箭电子

Plastic-Encapsulate Transistors

FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Plastic-Encapsulate Transistors

FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Plastic-Encapsulate Transistors

FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

YFWDIODE

佑风微

PNP Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) • Small flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • High Speed Switching Time : tstg=1.0µs(typ.) • Epoxy meets UL

MCC

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

PNP Epitaxial Transistor

VOLTAGE 50 Volts CURRENT 2 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.0 to 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power

CHENMKO

力勤

Power Amplifier Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

TOSHIBA

东芝

PNP Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) • Small flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • High Speed Switching Time : tstg=1.0µs(typ.) • Epoxy meets UL

MCC

PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

YFWDIODE

佑风微

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SC2921

WINGS

永盛电子

POWER TRANSISTORS(15A,160V,150W)

. . . designed for use in general-purpose amplifier and switching application. FEATURES: * Recommend for 125W High Fiderity Audio Frequency Amplifier Output stage * Complementary to 2SC2921

MOSPEC

统懋

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) Application : Audio and General Purpose

Sanken

三垦

Silicon PNP Power Transistors

DESCRIPTION • With MT-200 package • Complement to type 2SC2921 APPLICATIONS • Audio and general purpose

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With MT-200 package • Complement to type 2SC2921 APPLICATIONS • Audio and general purpose

ISC

无锡固电

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With MT-200 package • Complement to type 2SC2921 APPLICATIONS • Audio and general purpose

SAVANTIC

isc Silicon PNP Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage V(BR)CEO= -180V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2922 APPLICATIONS ·Designed for audio and general purpose applications.

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SC2922 APPLICATIONS ·Audio and general purpose

SAVANTIC

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With MT-200 package ·Complement to type 2SC2922 APPLICATIONS ·Audio and general purpose

JMNIC

锦美电子

Silicon PNP Epitaxial Planar Transistor(Audio and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) Application : Audio and General Purpose

Sanken

三垦

POWER TRANSISTORS(17A,180V,200W)

HIGH-POWER PNP SILICON POWER TRANSISTORS 17 AMPERE POWER TRANSISOTR 180 VOLTS 200 WATTS

MOSPEC

统懋

PNP PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ● High Current Capability ● High Power Dissipation ● Complementary to 2SC2922

WINGS

永盛电子

SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo

SAVANTIC

Power Amplifier Applications Power Switching Applications

文件:169.57 Kbytes Page:5 Pages

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:200.71 Kbytes Page:5 Pages

TOSHIBA

东芝

Silicon Planar Epitaxial Transistor

文件:146.29 Kbytes Page:4 Pages

BILIN

银河微电

晶体管

JSCJ

长晶科技

Power transistor for high-speed switching applications

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:169.57 Kbytes Page:5 Pages

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:200.71 Kbytes Page:5 Pages

TOSHIBA

东芝

PNP TRANSISTOR

文件:75.63 Kbytes Page:1 Pages

WINNERJOIN

永而佳

PNP Transistors

文件:1.66601 Mbytes Page:3 Pages

KEXIN

科信电子

Silicon Planar Epitaxial Transistor

文件:146.29 Kbytes Page:4 Pages

BILIN

银河微电

General Purpose Transistor

COMCHIP

典琦

PNP Silicon Epitaxial Transistors

文件:552.4 Kbytes Page:4 Pages

MCC

PNP Transistors

文件:1.66601 Mbytes Page:3 Pages

KEXIN

科信电子

2SA121产品属性

  • 类型

    描述

  • 型号

    2SA121

  • 制造商

    Toshiba America Electronic Components

  • 功能描述

    TRANSISTOR, SI-P, 50V, 2A, .5W, 120 MHZ - Tape and Reel

  • 制造商

    Toshiba

  • 功能描述

    PNP

更新时间:2025-10-30 20:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
25+
SOT89
32000
TOSHIBA/东芝全新特价2SA1213-Y即刻询购立享优惠#长期有货
CJ/长晶
23+
SOT-89
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
长电/长晶
2021
SOT-89-3L
40000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
CJ
21+
SOT-89
1000
只做原装,一定有货,不止网上数量,量多可订货!
CJ/长电
23+
NA
7825
原装正品!清仓处理!
TOSHIBA
23+
SOP
16000
正规渠道,只有原装!
CJ/长电
25+
SOT89
157420
明嘉莱只做原装正品现货
TOSHIBA/东芝
23+
SOT89
6000
专业配单保证原装正品假一罚十
CJ/长电
21+
SOT-89
30000
百域芯优势 实单必成 可开13点增值税
CJ(江苏长电/长晶)
24+
N/A
22048
原厂可订货,技术支持,直接渠道。可签保供合同

2SA121数据表相关新闻