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2SA1213晶体管资料

  • 2SA1213别名:2SA1213三极管、2SA1213晶体管、2SA1213晶体三极管

  • 2SA1213生产厂家:日本东芝公司

  • 2SA1213制作材料:Si-PNP

  • 2SA1213性质:表面帖装型 (SMD)_通用型 (Uni)

  • 2SA1213封装形式

  • 2SA1213极限工作电压:50V

  • 2SA1213最大电流允许值:2A

  • 2SA1213最大工作频率:120MHZ

  • 2SA1213引脚数

  • 2SA1213最大耗散功率

  • 2SA1213放大倍数

  • 2SA1213图片代号:NO

  • 2SA1213vtest:50

  • 2SA1213htest:120000000

  • 2SA1213atest:2

  • 2SA1213wtest:0

  • 2SA1213代换 2SA1213用什么型号代替:2SA1417,2SB1029,2SB1123,2SB1313,3CA4B,

2SA1213价格

参考价格:¥0.7859

型号:2SA1213-Y-TP 品牌:MCC 备注:这里有2SA1213多少钱,2026年最近7天走势,今日出价,今日竞价,2SA1213批发/采购报价,2SA1213行情走势销售排行榜,2SA1213报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SA1213

PNP Silicon Medium Power Transistor

*Features Low power dissipation 0.5W Collector Current -2A *Stucture Epitaxial planar type. PNP silicon transistor.

SECOS

喜可士

2SA1213

Power Switching Applications

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

KEXIN

科信电子

2SA1213

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

TOSHIBA

东芝

2SA1213

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

2SA1213

TRANSISTOR(PNP)

FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

HTSEMI

金誉半导体

2SA1213

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1213

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SA1213

Power Amplifier Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

TOSHIBA

东芝

2SA1213

丝印代码:NO;Silicon Planar Epitaxial Transistor

FEATURES ● Low saturation voltage ● High speed switching time ● Small flat package ● PC=1.0 to 2.0W(mounted on ceramic substrate) ● Complementary to 2SC2873

BILIN

银河微电

2SA1213

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

JIANGSU

长电科技

2SA1213

丝印代码:NY;TRANSISTOR竊늁NP 竊

FEATURES Power dissipation PCM : 0.5 W ( Tamb=25℃) Collector current ICM: -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

KOOCHIN

灏展电子

2SA1213

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

DGNJDZ

南晶电子

2SA1213

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SC2873. Applications Power amplifier and switching applications.

FOSHAN

蓝箭电子

2SA1213

PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

YFWDIODE

佑风微

2SA1213

Power transistor for high-speed switching applications

Application Scope:Switching / Power amplifier\nPolarity:PNP\nComplementary Product:2SC2873\nComments:Rank is specified by hFE range.\nRoHS Compatible Product(s) (#):Available\nAssembly bases:日本 Collector Current IC -2 A \nCollector power dissipation (mounted on ceramic board (250mm**2, t0.8mm)) PC 1 W \nCollector-emitter voltage VCEO -50 V ;

TOSHIBA

东芝

2SA1213

Power Amplifier Applications Power Switching Applications

文件:169.57 Kbytes Page:5 Pages

TOSHIBA

东芝

2SA1213

晶体管

JSCJ

长晶科技

2SA1213

丝印代码:NO;Silicon Planar Epitaxial Transistor

文件:146.29 Kbytes Page:4 Pages

BILIN

银河微电

2SA1213

Power Amplifier Applications Power Switching Applications

文件:200.71 Kbytes Page:5 Pages

TOSHIBA

东芝

Plastic-Encapsulate Transistors

FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:NO;Plastic-Encapsulate Transistors

FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:NY;Plastic-Encapsulate Transistors

FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

丝印代码:NO;PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

YFWDIODE

佑风微

PNP Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) • Small flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • High Speed Switching Time : tstg=1.0µs(typ.) • Epoxy meets UL

MCC

丝印代码:NO;General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

PNP Epitaxial Transistor

VOLTAGE 50 Volts CURRENT 2 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.0 to 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power

CHENMKO

力勤

Power Amplifier Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

TOSHIBA

东芝

丝印代码:NY;PNP Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) • Small flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • High Speed Switching Time : tstg=1.0µs(typ.) • Epoxy meets UL

MCC

丝印代码:NY;PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

YFWDIODE

佑风微

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

Power Amplifier Applications Power Switching Applications

文件:169.57 Kbytes Page:5 Pages

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:200.71 Kbytes Page:5 Pages

TOSHIBA

东芝

PNP TRANSISTOR

文件:75.63 Kbytes Page:1 Pages

WINNERJOIN

永而佳

PNP Transistors

文件:1.66601 Mbytes Page:3 Pages

KEXIN

科信电子

Silicon Planar Epitaxial Transistor

文件:146.29 Kbytes Page:4 Pages

BILIN

银河微电

PNP Transistors

文件:1.66601 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Silicon Epitaxial Transistors

文件:552.4 Kbytes Page:4 Pages

MCC

中等功率双极型晶体管

MCC

PNP Silicon Epitaxial Transistors

文件:552.4 Kbytes Page:4 Pages

MCC

封装/外壳:TO-243AA 包装:卷带(TR) 描述:TRANS PNP 50V 2A SOT89 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

丝印代码:NX;PNP Transistor

文件:804.03 Kbytes Page:3 Pages

PJSEMI

平晶半导体

GENERAL PURPOSE TRANSISTOR

文件:370.33 Kbytes Page:4 Pages

AITSEMI

创瑞科技

PNP Transistors

文件:1.66601 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Silicon Epitaxial Transistors

文件:552.4 Kbytes Page:4 Pages

MCC

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 2A SOT89 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

2SA1213产品属性

  • 类型

    描述

  • Polarity:

    PNP

  • VCEO(Max)(V):

    -50

  • IC(Max)(A):

    -2

  • hFE(Min):

    70

  • hFE(Max):

    240

  • VCE(sat)(Max)(V):

    -0.5

  • fT(Typ.)(MHz):

    120

  • ComplementaryProduct:

    2SC2873

  • Comments:

    Rank is specified by hFE range.

  • Number of pins:

    3

  • Surface mount package:

    Y

  • Package name:

    PW-Mini

  • Width×Length×Height(mm):

    4.6 x 4.2 x 1.6

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA(东芝)
26+
10548
原厂订货渠道,支持账期,一站式服务!
CJ/长晶
23+
SOT-89
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
TOSHIBA/东芝
25+
SOT89
32000
TOSHIBA/东芝全新特价2SA1213-Y即刻询购立享优惠#长期有货
TOSHIBA
2540+
SOT89
9854
只做原装正品假一赔十为客户做到零风险!!
TOSHIBA
23+
SOP
16000
正规渠道,只有原装!
TOSHIBA
ROHS全新原装
SOT-89
23000
东芝半导体QQ350053121正纳全系列代理经销
TOSHIBA(东芝)
24+
N/A
12600
原装正品现货支持实单
CJ/长电
23+
NA
7825
原装正品!清仓处理!
TOSHIBA
25+
SOT-89
6000
全新原装现货、诚信经营!
CHENMKO
2025+
SC-62
5000
原装进口价格优 请找坤融电子!

2SA1213数据表相关新闻