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2SA1213晶体管资料

  • 2SA1213别名:2SA1213三极管、2SA1213晶体管、2SA1213晶体三极管

  • 2SA1213生产厂家:日本东芝公司

  • 2SA1213制作材料:Si-PNP

  • 2SA1213性质:表面帖装型 (SMD)_通用型 (Uni)

  • 2SA1213封装形式

  • 2SA1213极限工作电压:50V

  • 2SA1213最大电流允许值:2A

  • 2SA1213最大工作频率:120MHZ

  • 2SA1213引脚数

  • 2SA1213最大耗散功率

  • 2SA1213放大倍数

  • 2SA1213图片代号:NO

  • 2SA1213vtest:50

  • 2SA1213htest:120000000

  • 2SA1213atest:2

  • 2SA1213wtest:0

  • 2SA1213代换 2SA1213用什么型号代替:2SA1417,2SB1029,2SB1123,2SB1313,3CA4B,

2SA1213价格

参考价格:¥0.7859

型号:2SA1213-Y-TP 品牌:MCC 备注:这里有2SA1213多少钱,2026年最近7天走势,今日出价,今日竞价,2SA1213批发/采购报价,2SA1213行情走势销售排行榜,2SA1213报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SA1213

PNP Silicon Medium Power Transistor

*Features Low power dissipation 0.5W Collector Current -2A *Stucture Epitaxial planar type. PNP silicon transistor.

SECOS

喜可士

2SA1213

Power Switching Applications

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

KEXIN

科信电子

2SA1213

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

TOSHIBA

东芝

2SA1213

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

2SA1213

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1213

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SA1213

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

DGNJDZ

南晶电子

2SA1213

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SC2873. Applications Power amplifier and switching applications.

FOSHAN

蓝箭电子

2SA1213

Power Amplifier Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

TOSHIBA

东芝

2SA1213

丝印代码:NO;Silicon Planar Epitaxial Transistor

FEATURES ● Low saturation voltage ● High speed switching time ● Small flat package ● PC=1.0 to 2.0W(mounted on ceramic substrate) ● Complementary to 2SC2873

BILIN

银河微电

2SA1213

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

JIANGSU

长电科技

2SA1213

丝印代码:NY;TRANSISTOR竊늁NP 竊

FEATURES Power dissipation PCM : 0.5 W ( Tamb=25℃) Collector current ICM: -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

KOOCHIN

灏展电子

2SA1213

TRANSISTOR(PNP)

FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

HTSEMI

金誉半导体

2SA1213

PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

YFWDIODE

佑风微

2SA1213

Power transistor for high-speed switching applications

Application Scope:Switching / Power amplifier\nPolarity:PNP\nComplementary Product:2SC2873\nComments:Rank is specified by hFE range.\nRoHS Compatible Product(s) (#):Available\nAssembly bases:日本 Collector Current IC -2 A \nCollector power dissipation (mounted on ceramic board (250mm**2, t0.8mm)) PC 1 W \nCollector-emitter voltage VCEO -50 V ;

TOSHIBA

东芝

2SA1213

晶体管

JSCJ

长晶科技

2SA1213

Power Amplifier Applications Power Switching Applications

文件:169.57 Kbytes Page:5 Pages

TOSHIBA

东芝

2SA1213

丝印代码:NO;Silicon Planar Epitaxial Transistor

文件:146.29 Kbytes Page:4 Pages

BILIN

银河微电

2SA1213

Power Amplifier Applications Power Switching Applications

文件:200.71 Kbytes Page:5 Pages

TOSHIBA

东芝

Plastic-Encapsulate Transistors

FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:NO;Plastic-Encapsulate Transistors

FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:NY;Plastic-Encapsulate Transistors

FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

丝印代码:NO;PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

YFWDIODE

佑风微

PNP Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) • Small flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • High Speed Switching Time : tstg=1.0µs(typ.) • Epoxy meets UL

MCC

丝印代码:NO;General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

PNP Epitaxial Transistor

VOLTAGE 50 Volts CURRENT 2 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.0 to 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power

CHENMKO

力勤

Power Amplifier Applications

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

TOSHIBA

东芝

丝印代码:NY;PNP Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) • Small flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • High Speed Switching Time : tstg=1.0µs(typ.) • Epoxy meets UL

MCC

丝印代码:NY;PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

YFWDIODE

佑风微

General Purpose Transistor

Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.

COMCHIP

典琦

Power Amplifier Applications Power Switching Applications

文件:169.57 Kbytes Page:5 Pages

TOSHIBA

东芝

Power Amplifier Applications Power Switching Applications

文件:200.71 Kbytes Page:5 Pages

TOSHIBA

东芝

PNP TRANSISTOR

文件:75.63 Kbytes Page:1 Pages

WINNERJOIN

永而佳

PNP Transistors

文件:1.66601 Mbytes Page:3 Pages

KEXIN

科信电子

Silicon Planar Epitaxial Transistor

文件:146.29 Kbytes Page:4 Pages

BILIN

银河微电

PNP Transistors

文件:1.66601 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Silicon Epitaxial Transistors

文件:552.4 Kbytes Page:4 Pages

MCC

中等功率双极型晶体管

MCC

PNP Silicon Epitaxial Transistors

文件:552.4 Kbytes Page:4 Pages

MCC

封装/外壳:TO-243AA 包装:卷带(TR) 描述:TRANS PNP 50V 2A SOT89 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

丝印代码:NX;PNP Transistor

文件:804.03 Kbytes Page:3 Pages

PJSEMI

平晶半导体

GENERAL PURPOSE TRANSISTOR

文件:370.33 Kbytes Page:4 Pages

AITSEMI

创瑞科技

PNP Transistors

文件:1.66601 Mbytes Page:3 Pages

KEXIN

科信电子

PNP Silicon Epitaxial Transistors

文件:552.4 Kbytes Page:4 Pages

MCC

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 50V 2A SOT89 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

2SA1213产品属性

  • 类型

    描述

  • Polarity:

    PNP

  • VCEO(Max)(V):

    -50

  • IC(Max)(A):

    -2

  • hFE(Min):

    70

  • hFE(Max):

    240

  • VCE(sat)(Max)(V):

    -0.5

  • fT(Typ.)(MHz):

    120

  • ComplementaryProduct:

    2SC2873

  • Comments:

    Rank is specified by hFE range.

  • Number of pins:

    3

  • Surface mount package:

    Y

  • Package name:

    PW-Mini

  • Width×Length×Height(mm):

    4.6 x 4.2 x 1.6

更新时间:2026-5-15 9:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA/东芝
2019+
QR
3333
原厂渠道 可含税出货
TOSHIBA(东芝)
26+
10548
原厂订货渠道,支持账期,一站式服务!
CJ/长晶
23+
SOT-89
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
CJ
24+
SOT-89
9800
一级代理/全新原装现货/长期供应!
SIPUSEMI
2021+
SOT-89
9000
原装现货,随时欢迎询价
CHENMKO
2025+
SC-62
5000
原装进口价格优 请找坤融电子!
TOSHIBA
23+
SOP
16000
正规渠道,只有原装!
TOSHIBA/东芝
最新批次
SOT89
28942
原盒原标,正品现货 诚信经营 价格美丽 假一罚十
TOSHIBA
25+
SOT-89
6000
全新原装现货、诚信经营!
TOSHIBA
25+
NA
12000
百分百原装正品 真实公司现货库存 本公司只做原装 可

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