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2SA1213晶体管资料

2SA1213别名：2SA1213三极管、2SA1213晶体管、2SA1213晶体三极管
2SA1213生产厂家：日本东芝公司
2SA1213制作材料：Si-PNP
2SA1213性质：表面帖装型（SMD）_通用型（Uni）
2SA1213封装形式：
2SA1213极限工作电压：50V
2SA1213最大电流允许值：2A
2SA1213最大工作频率：120MHZ
2SA1213引脚数：
2SA1213最大耗散功率：
2SA1213放大倍数：
2SA1213图片代号：NO
2SA1213vtest：50
2SA1213htest：120000000
2SA1213atest：2
2SA1213wtest：0

2SA1213代换 2SA1213用什么型号代替：2SA1417,2SB1029,2SB1123,2SB1313,3CA4B,

2SA1213价格

参考价格：￥0.7859

型号：2SA1213-Y-TP 品牌：MCC 备注：这里有2SA1213多少钱，2025年最近7天走势，今日出价，今日竞价，2SA1213批发/采购报价，2SA1213行情走势销售排行榜，2SA1213报价。

型号	功能描述	生产厂家企业	LOGO
2SA1213	PNP Silicon Medium Power Transistor Features Low power dissipation 0.5W Collector Current -2A Stucture Epitaxial planar type. PNP silicon transistor.	SECOS 喜可士	SECOS
2SA1213	Power Switching Applications Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873	KEXIN 科信电子	KEXIN
2SA1213	TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873	TOSHIBA 东芝	TOSHIBA
2SA1213	Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	TEL 东电电子	TEL
2SA1213	TRANSISTOR(PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time	HTSEMI 金誉半导体	HTSEMI
2SA1213	New Jersey Semi-Conductor Products, New Jersey Semi-Conductor Products	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
2SA1213	TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃	WINNERJOIN 永而佳	WINNERJOIN
2SA1213	Power Amplifier Applications Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873	TOSHIBA 东芝	TOSHIBA
2SA1213	Silicon Planar Epitaxial Transistor FEATURES ● Low saturation voltage ● High speed switching time ● Small flat package ● PC=1.0 to 2.0W(mounted on ceramic substrate) ● Complementary to 2SC2873	BILIN 银河微电	BILIN
2SA1213	SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time	JIANGSU 长电科技	JIANGSU
2SA1213	TRANSISTOR竊늁NP 竊 FEATURES Power dissipation PCM : 0.5 W （ Tamb=25℃） Collector current ICM: -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ， Tstg: -55℃ to +150℃	KOOCHIN 灏展电子	KOOCHIN
2SA1213	SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2873 ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time	DGNJDZ 南晶电子	DGNJDZ
2SA1213	Silicon PNP transistor in a SOT-89 Plastic Package Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low collector saturation voltage, High speed switching time, small flat package, Complementary to 2SC2873. Applications Power amplifier and switching applications.	FOSHAN 蓝箭电子	FOSHAN
2SA1213	PNP Transistors Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873	YFWDIODE 佑风微	YFWDIODE
2SA1213	Silicon Planar Epitaxial Transistor 文件：146.29 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA1213	Power Amplifier Applications Power Switching Applications 文件：200.71 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1213	Power Amplifier Applications Power Switching Applications 文件：169.57 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1213	晶体管	JSCJ 长晶科技	JSCJ
2SA1213	Power transistor for high-speed switching applications	TOSHIBA 东芝	TOSHIBA
2SA1213A	Plastic-Encapsulate Transistors FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SA1213AO	Plastic-Encapsulate Transistors FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SA1213AY	Plastic-Encapsulate Transistors FEATURES ● Complementary to 2SC2873 A ● Small Flat Package ● Power Amplifier and Switching Applications ● Low Saturation Voltage ● High Speed Switching Time	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
2SA1213-G	General Purpose Transistor Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.	COMCHIP 典琦	COMCHIP
2SA1213-HF	General Purpose Transistor Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.	COMCHIP 典琦	COMCHIP
2SA1213-O	PNP Transistors Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873	YFWDIODE 佑风微	YFWDIODE
2SA1213-O	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) • Small flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • High Speed Switching Time : tstg=1.0µs(typ.) • Epoxy meets UL	MCC	MCC
2SA1213O-HF	General Purpose Transistor Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.	COMCHIP 典琦	COMCHIP
2SA1213PT	PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere FEATURE * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-1A) * High speed switching time: tstg= 1.0uSec (typ.) * PC= 1.0 to 2.0W (mounted on ceramic substrate). * High saturation current capability. APPLICATION * Power	CHENMKO 力勤	CHENMKO
2SA1213Y	Power Amplifier Applications Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873	TOSHIBA 东芝	TOSHIBA
2SA1213-Y	PNP Silicon Epitaxial Transistors Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) • Small flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • High Speed Switching Time : tstg=1.0µs(typ.) • Epoxy meets UL	MCC	MCC
2SA1213-Y	PNP Transistors Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873	YFWDIODE 佑风微	YFWDIODE
2SA1213Y-HF	General Purpose Transistor Features - Small flat package. - Power amplifier and switching applications. - Low saturation voltage. - High speed switching time.	COMCHIP 典琦	COMCHIP
2SA1213_07	Power Amplifier Applications Power Switching Applications 文件：169.57 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1213_09	Power Amplifier Applications Power Switching Applications 文件：200.71 Kbytes Page：5 Pages	TOSHIBA 东芝	TOSHIBA
2SA1213_15	PNP TRANSISTOR 文件：75.63 Kbytes Page：1 Pages	WINNERJOIN 永而佳	WINNERJOIN
2SA1213_15	PNP Transistors 文件：1.66601 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1213_17	Silicon Planar Epitaxial Transistor 文件：146.29 Kbytes Page：4 Pages	BILIN 银河微电	BILIN
2SA1213-O	PNP Transistors 文件：1.66601 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1213-O	中等功率双极型晶体管	MCC	MCC
2SA1213-O	PNP Silicon Epitaxial Transistors 文件：552.4 Kbytes Page：4 Pages	MCC	MCC
2SA1213-O_13	PNP Silicon Epitaxial Transistors 文件：552.4 Kbytes Page：4 Pages	MCC	MCC
2SA1213-O-AP	封装/外壳：TO-243AA 包装：卷带（TR）描述：TRANS PNP 50V 2A SOT89 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC
2SA1213SQ	PNP Transistor 文件：804.03 Kbytes Page：3 Pages	PJSEMI 平晶半导体	PJSEMI
2SA1213Y	GENERAL PURPOSE TRANSISTOR 文件：370.33 Kbytes Page：4 Pages	AITSEMI 创瑞科技	AITSEMI
2SA1213-Y	PNP Transistors 文件：1.66601 Mbytes Page：3 Pages	KEXIN 科信电子	KEXIN
2SA1213-Y	PNP Silicon Epitaxial Transistors 文件：552.4 Kbytes Page：4 Pages	MCC	MCC
2SA1213-Y-TP	封装/外壳：TO-243AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：TRANS PNP 50V 2A SOT89 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	MCC	MCC

2SA1213产品属性

类型
描述
型号
2SA1213
制造商
Toshiba America Electronic Components
功能描述
TRANSISTOR, SI-P, 50V, 2A, .5W, 120 MHZ - Tape and Reel
制造商
Toshiba
功能描述
PNP

2SA1213供应商更多...

更新时间：2025-10-4 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科芯源微电子有限公司	2SA1213	CJ/长晶	23+	SOT-89	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
瀚佳科技(深圳)有限公司	2SA1213	CJ	24+	SOT-89	9800	一级代理/全新原装现货/长期供应!	询价
深圳市汇莱威科技有限公司	2SA1213NY	长电PL	2024	SOT-89	8230	16余年资质绝对原盒原盘代理渠道更多数量	询价
深圳市得捷芯城科技有限公司	2SA1213	CJ(江苏长电/长晶)	24+	N/A	22048	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市凯睿晟科技有限公司	2SA1213	CJ/长电	21+	SOT-89	30000	百域芯优势实单必成可开13点增值税	询价
深圳市振宏微科技有限公司	2SA1213	CJ/长电	23+	NA	7825	原装正品!清仓处理!	询价
深圳市华斯顿科技有限公司	2SA1213	CJ	25+23+	SOT89-3L	27699	绝对原装正品全新进口深圳现货	询价
深圳市胜彬电子有限公司	2SA1213	TOSHIBA/东芝	22+	TO-89	8000	原装正品支持实单	询价
深圳市恒达亿科技有限公司	2SA1213-Y(TE12L.ZC	TOSHIBA	25+	SOT-89	6000	全新原装现货、诚信经营!	询价
深圳市一线半导体有限公司	2SA1213	TOSHIBA	24+	SOT-89	157100	新进库存/原装	询价

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2SA1213晶体管资料

2SA1213价格

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2SA1213供应商更多...

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2SA1213规格书下载地址

2SA1213参数引脚图相关

2SA1213数据表相关新闻

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DdatasheetPDF页码索引