PNP Silicon Epitaxial Transistors

Features • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Low Saturation voltage: VCE(sat)=0.5V(max.)(IC=1.0A) • Small flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • High Speed Switching Time : tstg=1.0µs(typ.) • Epoxy meets UL

丝印代码：NO；PNP Transistors

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

中等功率双极型晶体管

PNP Silicon Epitaxial Transistors

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PNP Transistors

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PNP Silicon Epitaxial Transistors

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封装/外壳：TO-243AA 包装：卷带（TR） 描述：TRANS PNP 50V 2A SOT89 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High speed switching time: tstg = 1.0 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2873

PNP Silicon Medium Power Transistor

*Features Low power dissipation 0.5W Collector Current -2A *Stucture Epitaxial planar type. PNP silicon transistor.

Power Switching Applications

Features ● Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) ● High Speed Switching Time: tstg = 1.0us (typ.) ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2873

Power Amplifier Applications Power Switching Applications

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