TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Voltage Amplifier Applications Power Amplifier Applications • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2881

SILICON PNP EPITAXIAL TRANSISTOR

DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES * High voltage: VCEO= -120V * High transition frequency: fT=120MHz(typ.) * Pc=1 to 2 W(mounted on ceramic substrate)

Voltage Amplifier Applications

Features ● High Voltage : VCEO = -120V ● High Transition Frequency : fT = 120MHz(typ.) ● Small Flat Package ● Complementary to 2SC2881

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -800 mA Collector-base voltage V(BR)CBO : -120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Voltage Amplifier Applications Power Amplifier Applications

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SILICON PNP EPITAXIAL TRANSISTOR

文件：77.65 Kbytes Page：2 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：147.84 Kbytes Page：3 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：147.84 Kbytes Page：3 Pages