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2SA1201晶体管资料

  • 2SA1201别名:2SA1201三极管、2SA1201晶体管、2SA1201晶体三极管

  • 2SA1201生产厂家:日本东芝公司

  • 2SA1201制作材料:Si-PNP

  • 2SA1201性质:表面帖装型 (SMD)_通用型 (Uni)

  • 2SA1201封装形式:直插封装

  • 2SA1201极限工作电压:120V

  • 2SA1201最大电流允许值:0.8A

  • 2SA1201最大工作频率:120MHZ

  • 2SA1201引脚数:3

  • 2SA1201最大耗散功率

  • 2SA1201放大倍数

  • 2SA1201图片代号:H-100

  • 2SA1201vtest:120

  • 2SA1201htest:120000000

  • 2SA1201atest:0.8

  • 2SA1201wtest:0

  • 2SA1201代换 2SA1201用什么型号代替:2SB806,2SB1025,3CA1F,

2SA1201价格

参考价格:¥1.4378

型号:2SA1201-Y(TE12L,CF 品牌:Toshiba 备注:这里有2SA1201多少钱,2026年最近7天走势,今日出价,今日竞价,2SA1201批发/采购报价,2SA1201行情走势销售排行榜,2SA1201报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SA1201

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Voltage Amplifier Applications Power Amplifier Applications • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2881

TOSHIBA

东芝

2SA1201

SILICON PNP EPITAXIAL TRANSISTOR

DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES * High voltage: VCEO= -120V * High transition frequency: fT=120MHz(typ.) * Pc=1 to 2 W(mounted on ceramic substrate)

UTC

友顺

2SA1201

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -800 mA Collector-base voltage V(BR)CBO : -120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

2SA1201

Voltage Amplifier Applications

Features ● High Voltage : VCEO = -120V ● High Transition Frequency : fT = 120MHz(typ.) ● Small Flat Package ● Complementary to 2SC2881

KEXIN

科信电子

2SA1201

PNP Silicon Epitaxial Planar Transistor

FEATURES ● High voltage ● High transition frequency ● Complementary to 2SC2881

SECOS

喜可士

2SA1201

TRANSISTOR(PNP)

FEATURES High voltage High transition frequency Complementary to 2SC2881

HTSEMI

金誉半导体

2SA1201

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features High fT, high VCEO, small flat package, complementary pair with 2SC2881. Applications Power amplifier applications.

FOSHAN

蓝箭电子

2SA1201

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1201

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SA1201

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High voltage ● High transition frequency ● Complementary to 2SC2881

JIANGSU

长电科技

2SA1201

丝印代码:DO;Plastic-Encapsulate Transistors

FEATURES ● High voltage ● High transition frequency ● Small flatpackage ● Complementary to 2SC2881

BILIN

银河微电

2SA1201

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -800 mA Collector-base voltage V(BR)CBO : -120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SA1201

SOT-89 Plastic-Encapsulate Transistors

FEATURES High voltage High transition frequency

WILLAS

威伦电子

2SA1201

High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SA1201

丝印代码:DO;Plastic-Encapsulate Transistors

FEATURES High voltage High transition frequency Small flatpackage Complementary to 2SC2881

DGNJDZ

南晶电子

2SA1201

Bipolar Transistor

The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. • High voltage: VCEO= -120V \n• Pc=1 to 2 W(mounted on ceramic substrate);

UTC

友顺

2SA1201

晶体管

JSCJ

长晶科技

2SA1201

120V,0.8A,General Purpose PNP Bipolar Transistor

GALAXY

银河微电

2SA1201

SILICON PNP EPITAXIAL TRANSISTOR

文件:77.65 Kbytes Page:2 Pages

UTC

友顺

2SA1201

丝印代码:DO;Plastic-Encapsulate Transistors

文件:145.26 Kbytes Page:4 Pages

BILIN

银河微电

2SA1201

Voltage Amplifier Applications Power Amplifier Applications

文件:158.83 Kbytes Page:4 Pages

TOSHIBA

东芝

2SA1201

Voltage Amplifier Applications Power Amplifier Applications

文件:146.86 Kbytes Page:4 Pages

TOSHIBA

东芝

Silicon PNP transistor in a SOT-89 Plastic Package

Description Silicon PNP transistor in a SOT-89 Plastic Package. Features High fT, high VCEO, small flat package, complementary pair with 2SC2881G.Halogen Free Product. Applications Power amplifier applications.

FOSHAN

蓝箭电子

丝印代码:DO;High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

PNP Silicon Power Transistors

Features • Power amplifier applications • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

MCC

丝印代码:DY;High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印代码:DY;PNP Silicon Power Transistors

Features • Power amplifier applications • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

MCC

Voltage Amplifier Applications Power Amplifier Applications

文件:146.86 Kbytes Page:4 Pages

TOSHIBA

东芝

Voltage Amplifier Applications Power Amplifier Applications

文件:158.83 Kbytes Page:4 Pages

TOSHIBA

东芝

SILICON PNP EPITAXIAL TRANSISTOR

文件:77.65 Kbytes Page:2 Pages

UTC

友顺

PNP TRANSISTOR

文件:109.25 Kbytes Page:1 Pages

WINNERJOIN

永而佳

PNP Transistors

文件:678.44 Kbytes Page:2 Pages

KEXIN

科信电子

SILICON PNP EPITAXIAL TRANSISTOR

文件:147.84 Kbytes Page:3 Pages

UTC

友顺

Plastic-Encapsulate Transistors

文件:145.26 Kbytes Page:4 Pages

BILIN

银河微电

SILICON PNP EPITAXIAL TRANSISTOR

文件:147.84 Kbytes Page:3 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:77.65 Kbytes Page:2 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:147.84 Kbytes Page:3 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:147.84 Kbytes Page:3 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:77.65 Kbytes Page:2 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:147.84 Kbytes Page:3 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:147.84 Kbytes Page:3 Pages

UTC

友顺

PNP Transistors

文件:678.44 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Silicon Power Transistors

文件:397.46 Kbytes Page:3 Pages

MCC

PNP Silicon Power Transistors

文件:397.46 Kbytes Page:3 Pages

MCC

PNP Silicon Power Transistors

文件:397.46 Kbytes Page:3 Pages

MCC

PNP Transistors

文件:678.44 Kbytes Page:2 Pages

KEXIN

科信电子

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:PB-F POWER TRANSISTOR PW-MINI PD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-243AA 包装:散装 描述:TRANS PNP 120V 0.8A SOT89 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

2SA1201产品属性

  • 类型

    描述

  • Polarity:

    PNP

  • Features:

    Power Amps Driver Stage

  • VCEO(Max)(V):

    -120

  • IC(Max)(A):

    -0.8

  • hFE(Min):

    80

  • hFE(Max):

    240

  • VCE(sat)(Max)(V):

    -1.0

  • fT(Typ.)(MHz):

    120

  • ComplementaryProduct:

    2SC2881

  • Comments:

    Rank is specified by hFE range.

  • Number of pins:

    3

  • Surface mount package:

    Y

  • Package name:

    PW-Mini

  • Width×Length×Height(mm):

    4.6 x 4.2 x 1.6

更新时间:2026-5-14 12:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
2016+
SOT89
3000
只做原装,假一罚十,公司可开17%增值税发票!
TOSHIBA
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
TOSHIBA
26+
SOT-23
86720
全新原装正品价格最实惠 假一赔百
TOSHIBA
25+
SOT-89
9000
只做原装正品 有挂有货 假一赔十
CJ/长电
25+
SOT-89-3L
20300
CJ/长电原装特价2SA1201即刻询购立享优惠#长期有货
TOSHIBA
原厂封装
9800
原装进口公司现货假一赔百
TOSHIBA
25+
SOT89
2987
只售原装自家现货!诚信经营!欢迎来电
CJ/长晶
2450+
SOT89
8850
只做原装正品假一赔十为客户做到零风险!!
UTC/友顺
24+
SOT-89
9600
原装现货,优势供应,支持实单!
长电CJ
24+
SOT89
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增

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