2SA1201晶体管资料

  • 2SA1201别名:2SA1201三极管、2SA1201晶体管、2SA1201晶体三极管

  • 2SA1201生产厂家:日本东芝公司

  • 2SA1201制作材料:Si-PNP

  • 2SA1201性质:表面帖装型 (SMD)_通用型 (Uni)

  • 2SA1201封装形式:直插封装

  • 2SA1201极限工作电压:120V

  • 2SA1201最大电流允许值:0.8A

  • 2SA1201最大工作频率:120MHZ

  • 2SA1201引脚数:3

  • 2SA1201最大耗散功率

  • 2SA1201放大倍数

  • 2SA1201图片代号:H-100

  • 2SA1201vtest:120

  • 2SA1201htest:120000000

  • 2SA1201atest:0.8

  • 2SA1201wtest:0

  • 2SA1201代换 2SA1201用什么型号代替:2SB806,2SB1025,3CA1F,

2SA1201价格

参考价格:¥1.4378

型号:2SA1201-Y(TE12L,CF 品牌:Toshiba 备注:这里有2SA1201多少钱,2025年最近7天走势,今日出价,今日竞价,2SA1201批发/采购报价,2SA1201行情走势销售排行榜,2SA1201报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SA1201

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Voltage Amplifier Applications Power Amplifier Applications • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2881

TOSHIBA

东芝

2SA1201

SILICON PNP EPITAXIAL TRANSISTOR

DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES * High voltage: VCEO= -120V * High transition frequency: fT=120MHz(typ.) * Pc=1 to 2 W(mounted on ceramic substrate)

UTC

友顺

2SA1201

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -800 mA Collector-base voltage V(BR)CBO : -120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

2SA1201

Voltage Amplifier Applications

Features ● High Voltage : VCEO = -120V ● High Transition Frequency : fT = 120MHz(typ.) ● Small Flat Package ● Complementary to 2SC2881

KEXIN

科信电子

2SA1201

PNP Silicon Epitaxial Planar Transistor

FEATURES ● High voltage ● High transition frequency ● Complementary to 2SC2881

SECOS

喜可士

2SA1201

TRANSISTOR(PNP)

FEATURES High voltage High transition frequency Complementary to 2SC2881

HTSEMI

金誉半导体

2SA1201

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features High fT, high VCEO, small flat package, complementary pair with 2SC2881. Applications Power amplifier applications.

FOSHAN

蓝箭电子

2SA1201

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1201

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SA1201

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High voltage ● High transition frequency ● Complementary to 2SC2881

JIANGSU

长电科技

2SA1201

Plastic-Encapsulate Transistors

FEATURES ● High voltage ● High transition frequency ● Small flatpackage ● Complementary to 2SC2881

BILIN

银河微电

2SA1201

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -800 mA Collector-base voltage V(BR)CBO : -120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SA1201

SOT-89 Plastic-Encapsulate Transistors

FEATURES High voltage High transition frequency

WILLAS

威伦电子

2SA1201

High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SA1201

Plastic-Encapsulate Transistors

FEATURES High voltage High transition frequency Small flatpackage Complementary to 2SC2881

DGNJDZ

南晶电子

2SA1201

120V,0.8A,General Purpose PNP Bipolar Transistor

GALAXY

银河微电

2SA1201

Bipolar Transistor

UTC

友顺

2SA1201

晶体管

JSCJ

长晶科技

2SA1201

SILICON PNP EPITAXIAL TRANSISTOR

文件:77.65 Kbytes Page:2 Pages

UTC

友顺

2SA1201

Plastic-Encapsulate Transistors

文件:145.26 Kbytes Page:4 Pages

BILIN

银河微电

2SA1201

Voltage Amplifier Applications Power Amplifier Applications

文件:158.83 Kbytes Page:4 Pages

TOSHIBA

东芝

2SA1201

Voltage Amplifier Applications Power Amplifier Applications

文件:146.86 Kbytes Page:4 Pages

TOSHIBA

东芝

Silicon PNP transistor in a SOT-89 Plastic Package

Description Silicon PNP transistor in a SOT-89 Plastic Package. Features High fT, high VCEO, small flat package, complementary pair with 2SC2881G.Halogen Free Product. Applications Power amplifier applications.

FOSHAN

蓝箭电子

High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

PNP Silicon Power Transistors

Features • Power amplifier applications • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

MCC

High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

PNP Silicon Power Transistors

Features • Power amplifier applications • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

MCC

Voltage Amplifier Applications Power Amplifier Applications

文件:146.86 Kbytes Page:4 Pages

TOSHIBA

东芝

Voltage Amplifier Applications Power Amplifier Applications

文件:158.83 Kbytes Page:4 Pages

TOSHIBA

东芝

SILICON PNP EPITAXIAL TRANSISTOR

文件:77.65 Kbytes Page:2 Pages

UTC

友顺

PNP TRANSISTOR

文件:109.25 Kbytes Page:1 Pages

WINNERJOIN

永而佳

PNP Transistors

文件:678.44 Kbytes Page:2 Pages

KEXIN

科信电子

SILICON PNP EPITAXIAL TRANSISTOR

文件:147.84 Kbytes Page:3 Pages

UTC

友顺

Plastic-Encapsulate Transistors

文件:145.26 Kbytes Page:4 Pages

BILIN

银河微电

SILICON PNP EPITAXIAL TRANSISTOR

文件:147.84 Kbytes Page:3 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:77.65 Kbytes Page:2 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:147.84 Kbytes Page:3 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:147.84 Kbytes Page:3 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:77.65 Kbytes Page:2 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:147.84 Kbytes Page:3 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:147.84 Kbytes Page:3 Pages

UTC

友顺

PNP Transistors

文件:678.44 Kbytes Page:2 Pages

KEXIN

科信电子

PNP Silicon Power Transistors

文件:397.46 Kbytes Page:3 Pages

MCC

PNP Silicon Power Transistors

文件:397.46 Kbytes Page:3 Pages

MCC

PNP Silicon Power Transistors

文件:397.46 Kbytes Page:3 Pages

MCC

PNP Transistors

文件:678.44 Kbytes Page:2 Pages

KEXIN

科信电子

封装/外壳:TO-243AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:PB-F POWER TRANSISTOR PW-MINI PD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-243AA 包装:散装 描述:TRANS PNP 120V 0.8A SOT89 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

2SA1201产品属性

  • 类型

    描述

  • 型号

    2SA1201

  • 制造商

    Toshiba America Electronic Components

更新时间:2025-12-24 23:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA
24+
SOT-89
96000
公司大量原装现货,欢迎来电
UTC/友顺
24+
NA/
15250
原装现货,当天可交货,原型号开票
TOSHIBA
2016+
SOT89
3000
只做原装,假一罚十,公司可开17%增值税发票!
JRC
23+
SOT89
20000
全新原装假一赔十
长电CJ
24+
SOT89
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
CJ/长电
25+
SOT-89-3L
20300
CJ/长电原装特价2SA1201即刻询购立享优惠#长期有货
TOSHIBA
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
TOSHIBA/东芝
22+
SOT89
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
TOSHIBA/东芝
25+
SOT89
15000
全新原装现货,价格优势
宏嘉诚
23+
SOT-89
2860
三极管/MOS管/晶体管 > 三极管(BJT)

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