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位置：首页 > IC中文资料 > 2SA120

2SA120晶体管资料

  • 2SA120别名：2SA120三极管、2SA120晶体管、2SA120晶体三极管

  • 2SA120生产厂家：日本富士通公司

  • 2SA120制作材料：Si-PNP

  • 2SA120性质：射频/高频放大 （HF）_TR

  • 2SA120封装形式：直插封装

  • 2SA120极限工作电压：25V

  • 2SA120最大电流允许值：0.3A

  • 2SA120最大工作频率：200MHZ

  • 2SA120引脚数：3

  • 2SA120最大耗散功率：0.65W

  • 2SA120放大倍数：

  • 2SA120图片代号：C-40

  • 2SA120vtest：25

  • 2SA120htest：200000000

  • 2SA120atest：0.3

  • 2SA120wtest：0.65

  • 2SA120代换 2SA120用什么型号代替：BC303,BC304,BSW23,2N2904(A),2N2905(A),

2SA120价格

参考价格：￥1.4378

型号：2SA1201-Y(TE12L,CF 品牌：Toshiba 备注：这里有2SA120多少钱，2026年最近7天走势，今日出价，今日竞价，2SA120批发/采购报价，2SA120行情走势销售排行榜，2SA120报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SA1200

TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

High Voltage Switching Applications • High voltage: VCEO = −150 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2880

TOSHIBA

东芝

2SA1200

High Voltage Switching Applications

Features ● High Voltage : VCEO = -150V ● High Transition Frequency : fT = 120MHz(typ.) ● Small Flat Package ● Complementary to 2SC2880

KEXIN

科信电子

2SA1200

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1201

PNP Silicon Epitaxial Planar Transistor

FEATURES ● High voltage ● High transition frequency ● Complementary to 2SC2881

SECOS

喜可士

2SA1201

TRANSISTOR(PNP)

FEATURES High voltage High transition frequency Complementary to 2SC2881

HTSEMI

金誉半导体

2SA1201

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features High fT, high VCEO, small flat package, complementary pair with 2SC2881. Applications Power amplifier applications.

FOSHAN

蓝箭电子

2SA1201

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1201

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SA1201

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High voltage ● High transition frequency ● Complementary to 2SC2881

JIANGSU

长电科技

2SA1201

丝印代码：DO；Plastic-Encapsulate Transistors

FEATURES ● High voltage ● High transition frequency ● Small flatpackage ● Complementary to 2SC2881

BILIN

银河微电

2SA1201

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -800 mA Collector-base voltage V(BR)CBO : -120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SA1201

SOT-89 Plastic-Encapsulate Transistors

FEATURES High voltage High transition frequency

WILLAS

威伦电子

2SA1201

Voltage Amplifier Applications

Features ● High Voltage : VCEO = -120V ● High Transition Frequency : fT = 120MHz(typ.) ● Small Flat Package ● Complementary to 2SC2881

KEXIN

科信电子

2SA1201

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -800 mA Collector-base voltage V(BR)CBO : -120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

2SA1201

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Voltage Amplifier Applications Power Amplifier Applications • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2881

TOSHIBA

东芝

2SA1201

SILICON PNP EPITAXIAL TRANSISTOR

DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES * High voltage: VCEO= -120V * High transition frequency: fT=120MHz(typ.) * Pc=1 to 2 W(mounted on ceramic substrate)

UTC

友顺

2SA1201

High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SA1201

丝印代码：DO；Plastic-Encapsulate Transistors

FEATURES High voltage High transition frequency Small flatpackage Complementary to 2SC2881

DGNJDZ

南晶电子

2SA1201

Bipolar Transistor

The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. • High voltage: VCEO= -120V \n• Pc=1 to 2 W(mounted on ceramic substrate);

UTC

友顺

2SA1201

Power transistor for high-speed switching applications

Application Scope：Audio drivers\nPolarity：PNP\nComplementary Product：2SC2881\nComments：Rank is specified by hFE range.\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -0.8 A \nCollector power dissipation (mounted on ceramic board (250mm**2, t0.8mm)) PC 1 W \nCollector-emitter voltage VCEO -120 V ;

TOSHIBA

东芝

2SA1201G

Silicon PNP transistor in a SOT-89 Plastic Package

Description Silicon PNP transistor in a SOT-89 Plastic Package. Features High fT, high VCEO, small flat package, complementary pair with 2SC2881G.Halogen Free Product. Applications Power amplifier applications.

FOSHAN

蓝箭电子

2SA1201O

丝印代码：DO；High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SA1201-O

PNP Silicon Power Transistors

Features • Power amplifier applications • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

MCC

2SA1201Y

丝印代码：DY；High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SA1201-Y

丝印代码：DY；PNP Silicon Power Transistors

Features • Power amplifier applications • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

MCC

2SA1202

Power Amplifier Applications

Features ● Suitable for Driver of 30 to 35 Watts Audio Amplifier ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2882

KEXIN

科信电子

2SA1202

TRANSISTOR (POWER, VOLTAGE AMPLIFIER APPLICATIONS)

Power Amplifier Applications Voltage Amplifier Applications • Suitable for driver of 30 to 35 watts audio amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2882

TOSHIBA

东芝

2SA1202

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1202

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SA1203

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SA1203

丝印代码：HO1；Silicon Planar Epitaxial Transistor

FEATURES Suitable for output stage of 3 watts amplifier Suitable flat package PC=1.0 to 2.0W(mounted on ceramic substrate) Complementary to 2SC2883

DGNJDZ

南晶电子

2SA1203

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1203

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2883 ● Small Flat Package ● Audio Frequency Amplifier Application

JIANGSU

长电科技

2SA1203

Plastic-Encapsulate Transistors

FEATURES • Suitable for output stage of3 watts Amplifier • Suitable flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • Complementary to 2SC2884

HOTTECH

合科泰

2SA1203

丝印代码：HO1；Silicon Planar Epitaxial Transistor

FEATURES ● Suitable for output stage of 3 watts amplifier ● Suitable flat package ● PC=1.0 to 2.0W(mounted on ceramic substrate) ● Complementary to 2SC2883

BILIN

银河微电

2SA1203

丝印代码：H；Suitable For Output Stage of 3 Waits Amplifier

Features ● Suitable For Output Stage of 3 Watts Amplifier ● Small Flat Package ● PC= 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2883

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

2SA1203

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

2SA1203

Plastic-Encapsulate Transistors

SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

TEL

2SA1203

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications Features ● Suitable For Output Stage of 3 Watts Amplifier ● Small Flat Package ● PC= 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2883

KEXIN

科信电子

2SA1203

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES Complementary to 2SC2883 Small Flat Package Audio Frequency Amplifier Application

HTSEMI

金誉半导体

2SA1203

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Suitable for output stage of 3 watts amplifier, small flat package, complementary to 2SC2883. Applications Audio frequency amplifier applications.

FOSHAN

蓝箭电子

2SA1204

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1204

TRANSISTOR(PNP)

FEATURES ● Complementary to 2SC2884 ● Small Flat Package ● Audio Frequency Amplifier Application ● High DC Current Gain

HTSEMI

金誉半导体

2SA1204

Audio Frequency Amplifier Applications

Features ● Suitable For Output Stage of 1 Watts Amplifier ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2884

KEXIN

科信电子

2SA1204

TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

Audio Frequency Amplifier Applications • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2884

TOSHIBA

东芝

2SA1204

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2884

TOSHIBA

东芝

2SA1204

丝印代码：RO；Silicon Planar Epitaxial Transistor

FEATURES ● Suitable for output stage of 1 watts Amplifier ● Suitable flat package ● High DC current gain ● PC=1.0 to 2.0W(mounted on ceramic substrate) ● Complementary to 2SC2884

BILIN

银河微电

2SA1204

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2884 ● Small Flat Package ● Audio Frequency Amplifier Application ● High DC Current Gain

JIANGSU

长电科技

2SA1204

丝印代码：RO；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Complementary to 2SC2884 Small Flat Package Audio Frequency Amplifier Application High DC Current Gain

DGNJDZ

南晶电子

2SA1204

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

2SA1204

Plastic-Encapsulate Transistors

FEATURES • Suitable for output stage of 3 watts Amplifier • Suitable flat package • High DC current gain • PC=1.0 to 2.0W(mounted on ceramic substrate) • Complementary to 2SC2884

HOTTECH

合科泰

2SA1204-Y

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2884

TOSHIBA

东芝

2SA1205

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·High power dissipation APPLICATIONS ·For general purpose applications

ISC

无锡固电

2SA1205

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·High power dissipation APPLICATIONS ·For general purpose applications

SAVANTIC

2SA1205

SILICON PNP EPITAXIAL PLANAR

Silicon PNP Epitaxial Planar Application Example : General Purpose

SANKEN

三垦

2SA1205

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·High power dissipation APPLICATIONS ·For general purpose applications

JMNIC

锦美电子

2SA1206

PNP SILICON TEANSISTOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

2SA1206

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA1207

High-Voltage Switching, AF 60W Predriver Applications

High-Voltage Switching AF 60W Predriver Applications Features • Adoption of FBET process. • High breakdown voltage. • Excellent linearity of hFE and small Cob. • Fast switching speed.

SANYO

三洋

2SA1207

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SA120产品属性

  • 类型

    描述

  • Polarity：

    PNP

  • Features：

    Power Amps Driver Stage

  • VCEO(Max)(V)：

    -120

  • IC(Max)(A)：

    -0.8

  • hFE(Min)：

    80

  • hFE(Max)：

    240

  • VCE(sat)(Max)(V)：

    -1.0

  • fT(Typ.)(MHz)：

    120

  • ComplementaryProduct：

    2SC2881

  • Comments：

    Rank is specified by hFE range.

  • Number of pins：

    3

  • Surface mount package：

    Y

  • Package name：

    PW-Mini

  • Width×Length×Height(mm)：

    4.6 x 4.2 x 1.6

2SA120供应商更多...

更新时间：2026-5-14 19:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
中天科工半导体（深圳）有限公司
2SA1202
TOSHIBA/东芝
25+
SOT-89
31085
TOSHIBA/东芝全新特价2SA1202即刻询购立享优惠#长期有货
询价
深圳市联世界科技有限公司
2SA1202-Y(TE12L,CF
TOSHIBA
24+/25+
1066
原装正品现货库存价优
询价
深圳市科恒伟业电子有限公司
2SA1202
TOSHIBA/东芝
2540+
PW-Mini
8595
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市振宏微科技有限公司
2SA1202YTE12L
TOSHIBA
23+
NA
1386
专做原装正品,假一罚百!
询价
深圳诚思涵科技有限公司
2SA1202-Y
TOSHIBA
17+
SOT-89
60000
保证进口原装可开17%增值税发票
询价
深圳市明嘉莱科技有限公司
2SA1202-Y
TOSHIBA/东芝
25+
SOT-89
880000
明嘉莱只做原装正品现货
询价
深圳市华斯顿科技有限公司
2SA1202-Y/FY
Toshiba
25+23+
Sot-89
32879
绝对原装正品全新进口深圳现货
询价
深圳市英科美电子有限公司
2SA1202
NEC
2223+
SOT89
26800
只做原装正品假一赔十为客户做到零风险
询价
深圳市佳鑫美电子科技有限公司
2SA1202
TOSHIBA
25+
SOT89
2987
只售原装自家现货!诚信经营!欢迎来电
询价
深圳市一线半导体有限公司
2SA1202-Y(TERR)
TOSHIBA
24+
SOT-89
1000
询价

2SA120芯片相关品牌

2SA120规格书下载地址

2SA120参数引脚图相关

2SA120数据表相关新闻

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