TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

High Voltage Switching Applications • High voltage: VCEO = −150 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2880

High Voltage Switching Applications

Features ● High Voltage : VCEO = -150V ● High Transition Frequency : fT = 120MHz(typ.) ● Small Flat Package ● Complementary to 2SC2880

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

Voltage Amplifier Applications

Features ● High Voltage : VCEO = -120V ● High Transition Frequency : fT = 120MHz(typ.) ● Small Flat Package ● Complementary to 2SC2881

PNP Silicon Epitaxial Planar Transistor

FEATURES ● High voltage ● High transition frequency ● Complementary to 2SC2881

Plastic-Encapsulate Transistors

FEATURES High voltage High transition frequency Small flatpackage Complementary to 2SC2881

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -800 mA Collector-base voltage V(BR)CBO : -120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features High fT, high VCEO, small flat package, complementary pair with 2SC2881. Applications Power amplifier applications.

High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

SOT-89 Plastic-Encapsulate Transistors

FEATURES High voltage High transition frequency

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -800 mA Collector-base voltage V(BR)CBO : -120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Voltage Amplifier Applications Power Amplifier Applications • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2881

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SILICON PNP EPITAXIAL TRANSISTOR

DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES * High voltage: VCEO= -120V * High transition frequency: fT=120MHz(typ.) * Pc=1 to 2 W(mounted on ceramic substrate)

Plastic-Encapsulate Transistors

FEATURES ● High voltage ● High transition frequency ● Small flatpackage ● Complementary to 2SC2881

TRANSISTOR(PNP)

FEATURES High voltage High transition frequency Complementary to 2SC2881

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High voltage ● High transition frequency ● Complementary to 2SC2881

Silicon PNP transistor in a SOT-89 Plastic Package

Description Silicon PNP transistor in a SOT-89 Plastic Package. Features High fT, high VCEO, small flat package, complementary pair with 2SC2881G.Halogen Free Product. Applications Power amplifier applications.

High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

PNP Silicon Power Transistors

Features • Power amplifier applications • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

PNP Silicon Power Transistors

Features • Power amplifier applications • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TRANSISTOR (POWER, VOLTAGE AMPLIFIER APPLICATIONS)

Power Amplifier Applications Voltage Amplifier Applications • Suitable for driver of 30 to 35 watts audio amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2882

Power Amplifier Applications

Features ● Suitable for Driver of 30 to 35 Watts Audio Amplifier ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2882

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications Features ● Suitable For Output Stage of 3 Watts Amplifier ● Small Flat Package ● PC= 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2883

Suitable For Output Stage of 3 Waits Amplifier

Features ● Suitable For Output Stage of 3 Watts Amplifier ● Small Flat Package ● PC= 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2883

Plastic-Encapsulate Transistors

SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO: -30 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃

Plastic-Encapsulate Transistors

FEATURES • Suitable for output stage of3 watts Amplifier • Suitable flat package • PC=1.0 to 2.0W(mounted on ceramic substrate) • Complementary to 2SC2884

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Suitable for output stage of 3 watts amplifier, small flat package, complementary to 2SC2883. Applications Audio frequency amplifier applications.

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -1.5 A Collector-base voltage V(BR)CBO : -30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon Planar Epitaxial Transistor

FEATURES Suitable for output stage of 3 watts amplifier Suitable flat package PC=1.0 to 2.0W(mounted on ceramic substrate) Complementary to 2SC2883

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2883 ● Small Flat Package ● Audio Frequency Amplifier Application

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES Complementary to 2SC2883 Small Flat Package Audio Frequency Amplifier Application

Silicon Planar Epitaxial Transistor

FEATURES ● Suitable for output stage of 3 watts amplifier ● Suitable flat package ● PC=1.0 to 2.0W(mounted on ceramic substrate) ● Complementary to 2SC2883

Silicon Planar Epitaxial Transistor

FEATURES ● Suitable for output stage of 1 watts Amplifier ● Suitable flat package ● High DC current gain ● PC=1.0 to 2.0W(mounted on ceramic substrate) ● Complementary to 2SC2884

TRANSISTOR(PNP)

FEATURES ● Complementary to 2SC2884 ● Small Flat Package ● Audio Frequency Amplifier Application ● High DC Current Gain

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to 2SC2884 ● Small Flat Package ● Audio Frequency Amplifier Application ● High DC Current Gain

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2884

TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)

Audio Frequency Amplifier Applications • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2884

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Complementary to 2SC2884 Small Flat Package Audio Frequency Amplifier Application High DC Current Gain

Plastic-Encapsulate Transistors

FEATURES • Suitable for output stage of 3 watts Amplifier • Suitable flat package • High DC current gain • PC=1.0 to 2.0W(mounted on ceramic substrate) • Complementary to 2SC2884

Audio Frequency Amplifier Applications

Features ● Suitable For Output Stage of 1 Watts Amplifier ● Small Flat Package ● PC = 1 to 2W (mounted on ceramic substrate) ● Complementary to 2SC2884

Audio Frequency Amplifier Applications

Audio Frequency Amplifier Applications • High DC current gain: hFE(1) = 100 to 320 • Suitable for output stage of 1 watts amplifier • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SC2884

SILICON PNP EPITAXIAL PLANAR

Silicon PNP Epitaxial Planar Application Example : General Purpose

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·High power dissipation APPLICATIONS ·For general purpose applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·High power dissipation APPLICATIONS ·For general purpose applications

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PN package ·High power dissipation APPLICATIONS ·For general purpose applications

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

PNP SILICON TEANSISTOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

High-Voltage Switching, AF 60W Predriver Applications

High-Voltage Switching AF 60W Predriver Applications Features • Adoption of FBET process. • High breakdown voltage. • Excellent linearity of hFE and small Cob. • Fast switching speed.

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

High-Voltage Switching, Audio 80W Output Predriver Applications

2SA1208 --> PNP 2SC2910 --> NPN High-Voltage Switching Audio 80W Output Predriver Applications Features · Adoption of FBET process. · High breakdown voltage. · Excellent linearity of hFE and small Cob. · Fast swtching speed.