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2SA103晶体管资料
2SA103别名:2SA103三极管、2SA103晶体管、2SA103晶体三极管
2SA103生产厂家:日本松下公司
2SA103制作材料:Ge-PNP
2SA103性质:射频/高频放大 (HF)_中频放大 (ZF)
2SA103封装形式:直插封装
2SA103极限工作电压:40V
2SA103最大电流允许值:0.01A
2SA103最大工作频率:35MHZ
2SA103引脚数:3
2SA103最大耗散功率:
2SA103放大倍数:
2SA103图片代号:C-47
2SA103vtest:40
2SA103htest:35000000
- 2SA103atest:0.01
2SA103wtest:0
2SA103代换 2SA103用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG95A,
2SA103价格
参考价格:¥0.9933
型号:2SA10340SL 品牌:Panasonic 备注:这里有2SA103多少钱,2025年最近7天走势,今日出价,今日竞价,2SA103批发/采购报价,2SA103行情走势销售排行榜,2SA103报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
2SA103 | Ge PNP Drift RF Amplifier IF Amplifier Features • High fαb | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
Silicon PNP Epitaxial • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Epitaxial • Low frequency low noise amplifier • Complementary pair with 2SC458 (LG) and 2SC2310 | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP Epitaxial • Low frequency low noise amplifier • Complementary pair with 2SC458 (LG) and 2SC2310 | HitachiHitachi Semiconductor 日立日立公司 | |||
Silicon PNP epitaxial planer type Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2405, 2SC2406 ■ Features • Low noise voltage NV • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pac | Panasonic 松下 | |||
Silicon NPN epitaxial planer type AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching | Panasonic 松下 | |||
Silicon PNP Epitaxial Planar Type Features ● Low noise voltage NV. ● High forward current transfer ratio hFE. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. | KEXIN 科信电子 | |||
Silicon NPN epitaxial planer type AF Low-noise Amplifier Complementary Pair with 2SA1034, 2SA1035 Features • Low NV • High hFE Si NPN Triple Diffused Mesa High Speed Power Switching | Panasonic 松下 | |||
Silicon PNP Epitaxial Planar Type Features ● Low noise voltage NV. ● High forward current transfer ratio hFE. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. | KEXIN 科信电子 | |||
Silicon PNP epitaxial planer type Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SC2405, 2SC2406 ■ Features • Low noise voltage NV • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape pac | Panasonic 松下 | |||
Silicon Epitaxial Planar Transistor FEATURES ● Large IC.ICMAX. =-500mA. ● Low VCE(sat). Ideal for low-voltage operation. APPLICATIONS ● Ideal for low-voltage operation. | BILIN 银河微电 | |||
PNP Silicon General Purpose Transistor FEATURES . Large IC, IC MAX.=-500mA . Low VCE(Sat), Ideal for low-voltage operation . Small Package. . RoHS Compliant Product | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Large IC. ICMax.= -500 mA ● Low VCE(sat). Ideal for low-voltage operation. | JIANGSU 长电科技 | |||
Plastic-Encapsulate Transistors FEATURES Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • Large IC. ICMax.= -500 mA • Low VCE(sat). Ideal for low-voltage operation. | DGNJDZ 南晶电子 | |||
Silicon Epitaxial Planar Transistor FEATURES ● Large IC.ICMAX. =-500mA. ● Low VCE(sat). Ideal for low-voltage operation. ● Complements the 2SC2411. APPLICATIONS ● Ideal for low-voltage operation. | LUGUANG 鲁光电子 | |||
Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Large Ic low Vce(sat),complementary pair with the 2SC2411K. Applications Medium power amplifier applications. | FOSHAN 蓝箭电子 | |||
Medium Power Transistor Features ● Large IC. ICMax. = -500mA ● Low VCE(sat). Ideal for low-voltage operation. | KEXIN 科信电子 | |||
PNP Silicon General Purpose Transistor FEATURES RoHS Compliant Product Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
PNP General Purpose Transistors PNP General Purpose Transistors P/b Lead(Pb)-Free | WEITRON | |||
Medium Power Transistor Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | |||
Medium Power Transistor Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | |||
Medium Power Transistor Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | |||
Medium Power Transistor Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | |||
Medium Power Transistor Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | |||
Medium Power PNP Transistor VOLTAGE 32 Volts CURRENT 0.5 Ampere FEATURE * Surface mount package. (SOT-23) * Low saturation voltage V CE(sat)=-0.4V(max.)(IC=-100mA) * Low cob. Cob=7.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. CONSTRUCTION * PNP Silicon Transistor * Epi | CHENMKO 力勤 | |||
Medium Power Transistor Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | |||
Medium Power Transistor Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | |||
Medium Power Transistor Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | |||
Medium Power Transistor Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor | ROHM 罗姆 | |||
PNP Silicon Epitaxial Transistors Features · Large IC. ICMax.= -0.5 A · Low VCE(sat). Ideal for low-voltage operation. · Epoxy meets UL 94 V-0 flammability rating · Moisure Sensitivity Level 1 · Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ·· | MCC 美微科 | |||
PNP Silicon Epitaxial Transistors Features · Large IC. ICMax.= -0.5 A · Low VCE(sat). Ideal for low-voltage operation. · Epoxy meets UL 94 V-0 flammability rating · Moisure Sensitivity Level 1 · Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ·· | MCC 美微科 | |||
PNP Silicon Epitaxial Transistors Features · Large IC. ICMax.= -0.5 A · Low VCE(sat). Ideal for low-voltage operation. · Epoxy meets UL 94 V-0 flammability rating · Moisure Sensitivity Level 1 · Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ·· | MCC 美微科 | |||
TRANSISTOR(PNP) FEATURES ● Excellent hFE linearity. ● Complments the 2SC2412 | HTSEMI 金誉半导体 | |||
Silicon Epitaxial Planar Transistor FEATURES Low IC.ICMAX. =-150mA. Low VCE(sat).Ideal for low-voltage operation. APPLICATIONS Ideal for low-voltage operation. | BILIN 银河微电 | |||
Small Signal Plastic Encapsulate Transistor FEATURES • Excellent hFE linearity. • Complements of the 2SC2412 | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL 东电电子 | |||
PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER • Complemen to 2SC2712 • Collector-current:Ic=-100mA • Collector-Emiller Voltage:VCE=-45V | WINNERJOIN 永而佳 | |||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES • Excellent hFE linearity. • Complments the 2SC2412 | JIANGSU 长电科技 | |||
Plastic-Encapsulate Transistors FEATURES Excellent hFE linearity. Complments the 2SC2412 | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | |||
Epitaxial planar type, PNP silicon transistor FEATURES ◾ Excellent hFE linearity. ◾ Epitaxial planar type. ◾ PNP silicon transistor. | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
PNP Transistors Features ● Excellent hFE linearity. ● PNP silicon transistor | KEXIN 科信电子 | |||
PNP Transistors Features ● Excellent hFE linearity. ● PNP silicon transistor | KEXIN 科信电子 | |||
PNP Transistors Features ● Excellent hFE linearity. ● PNP silicon transistor | KEXIN 科信电子 | |||
PNP Transistors Features ● Excellent hFE linearity. ● PNP silicon transistor | KEXIN 科信电子 | |||
General Purpose Transistor (??0V, ??.15A) Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli | ROHM 罗姆 | |||
PNP Transistors Features ● Excellent hFE linearity. ● PNP silicon transistor | KEXIN 科信电子 | |||
General Purpose Transistor (??0V, ??.15A) Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli | ROHM 罗姆 | |||
General Purpose Transistor (-50V, -150mA) Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
General Purpose Transistor (??0V, ??.15A) Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli | ROHM 罗姆 | |||
PNP General Purpose Transistors PNP General Purpose Transistor P/b Lead(Pb)-Free | WEITRON | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
General Purpose Transistor Features Excellent hFE linearity. PNP silicon transistor | KEXIN 科信电子 | |||
PNP Silicon General Purpose Transistor FEATURES RoHS Compliant Product. Excellent hFE linearity. Complments the 2SC2412K. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
General Purpose Transistor Features 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. | ROHM 罗姆 | |||
General Purpose Transistor (??0V, ??.15A) Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli | ROHM 罗姆 | |||
General Purpose Transistor (??0V, ??.15A) Features 1) General Purpose. 2) Complementary NPN Types : 2SC5658 (VMT3) / 2SC4617EB (EMT3F) / 2SC4617 (EMT3) / 2SC4081UB (UMT3F) / 2SC4081 (UMT3) / 2SC2412 (SMT3) 3) Complex transistors : EMT1 / EMT2 / EMT3 (EMT6) / UMT1N / UMT2N (UMT6) / IMT1A / IMT2A / IMT3A (SMT6) 4) Lead Free/RoHS Compli | ROHM 罗姆 |
2SA103产品属性
- 类型
描述
- 型号
2SA103
- 功能描述
Ge PNP Drift
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ROHM(罗姆) |
24+ |
SOT233L |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
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ROHM/罗姆 |
24+ |
SOT23 |
17500 |
郑重承诺只做原装进口现货 |
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ROHM/罗姆 |
2022+ |
TO-263-3 |
17500 |
原厂原装,假一罚十 |
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ROHM |
21+ |
标准封装 |
500 |
保证原装正品,需要联系张小姐 13544103396 微信同号 |
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ROHM |
21+ |
SOT-346 |
21000 |
一级代理进口原装!长期供应!绝对优势价格(诚信经营 |
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Panasonic |
24+ |
原厂封装 |
3000 |
原装现货假一罚十 |
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ROHM/罗姆 |
18+ |
TO23 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
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ROHM |
15+ |
SOT-23 |
6698 |
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ROHM |
21+ |
SOT-23 |
14554 |
原装现货假一赔十 |
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ROHM/罗姆 |
22+ |
SOT-23 |
100000 |
代理渠道/只做原装/可含税 |
2SA103规格书下载地址
2SA103参数引脚图相关
- 5000
- 4921
- 4899
- 485接口
- 47471
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- 4069
- 4066
- 3q1
- 3g汽车
- 3579
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- 31337
- 303c
- 2sc4226
- 2SA1060
- 2SA1052
- 2SA1051
- 2SA1050
- 2SA1049
- 2SA1048
- 2SA1047
- 2SA1046
- 2SA1045
- 2SA1044
- 2SA1043
- 2SA1042
- 2SA1041
- 2SA1040
- 2SA104
- 2SA1039
- 2SA1038
- 2SA1037(A,K,KLN)
- 2SA1037
- 2SA1036(K)
- 2SA1036
- 2SA1035
- 2SA1034
- 2SA1033
- 2SA1032
- 2SA1031
- 2SA1030
- 2SA1029
- 2SA1028
- 2SA1027
- 2SA1026
- 2SA1025
- 2SA1024
- 2SA1023
- 2SA1022
- 2SA1021
- 2SA1020
- 2SA102
- 2SA1019
- 2SA1018
- 2SA1017
- 2SA1016K
- 2SA1016
- 2SA1015LT1
- 2SA1015
- 2SA1014
- 2SA1013
- 2SA1012
- 2SA1011
- 2SA1010
- 2SA101
- 2SA1009
- 2SA1008
- 2SA1007
- 2SA1006
2SA103数据表相关新闻
2SA1037AKT146Q
2SA1037AKT146Q
2023-5-262SA1012G-TO252R-R-TG_UTC代理商
2SA1012G-TO252R-R-TG_UTC代理商
2023-2-212SA1015G-TO92K-BL-TG_UTC代理商
2SA1015G-TO92K-BL-TG_UTC代理商
2023-2-162SA1015-Y-AP(原厂授权中国分销商)
主要参数: 分立半导体产品 电流 - 集电极(Ic)(最大值): 150mA 电压 - 集射极击穿(最大值): 50V 电流(最大值) :100nA(ICBO) DC 电流增益(hFE)(最小值): 120 功率 - 最大值: 400MW 频率 - 跃迁: 80MHz 工作温度 :-55°C ~ 125°C 安装类型: 通孔 封装: TO-226-3, TO-92-3
2020-3-62SA1036KT146R三极管进口原装现货
2SA1036KT146R三极管进口原装现货 启动用表面安装型三极管
2019-8-152SA1036KT146R一级代理进口原装现货尽在-宇集芯电子
2SA1036K T146R 2SA1036KT146R
2019-5-9
DdatasheetPDF页码索引
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