丝印代码：2F-；Medium Power PNP Transistor

VOLTAGE 32 Volts CURRENT 0.5 Ampere FEATURE * Surface mount package. (SOT-23) * Low saturation voltage V CE(sat)=-0.4V(max.)(IC=-100mA) * Low cob. Cob=7.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. CONSTRUCTION * PNP Silicon Transistor * Epi

PNP Silicon General Purpose Transistor

FEATURES . Large IC, IC MAX.=-500mA . Low VCE(Sat), Ideal for low-voltage operation . Small Package. . RoHS Compliant Product

丝印代码：H*；Silicon Epitaxial Planar Transistor

FEATURES ● Large IC.ICMAX. =-500mA. ● Low VCE(sat). Ideal for low-voltage operation. APPLICATIONS ● Ideal for low-voltage operation.

Medium Power Transistor

Features ● Large IC. ICMax. = -500mA ● Low VCE(sat). Ideal for low-voltage operation.

丝印代码：HP；Medium Power Transistor

Features 1) Large IC. ICMax. = 500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. Structure Epitaxial planar type PNP silicon transistor

PNP General Purpose Transistors

PNP General Purpose Transistors P/b Lead(Pb)-Free