2SA102晶体管资料

  • 2SA102别名:2SA102三极管、2SA102晶体管、2SA102晶体三极管

  • 2SA102生产厂家:日本松下公司

  • 2SA102制作材料:Ge-PNP

  • 2SA102性质:射频/高频放大 (HF)_中频放大 (ZF)

  • 2SA102封装形式:直插封装

  • 2SA102极限工作电压:40V

  • 2SA102最大电流允许值:0.01A

  • 2SA102最大工作频率:25MHZ

  • 2SA102引脚数:3

  • 2SA102最大耗散功率

  • 2SA102放大倍数

  • 2SA102图片代号:C-47

  • 2SA102vtest:40

  • 2SA102htest:25000000

  • 2SA102atest:0.01

  • 2SA102wtest:0

  • 2SA102代换 2SA102用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG95A,

2SA102价格

参考价格:¥0.6985

型号:2SA1020RLRAG 品牌:ONSemi 备注:这里有2SA102多少钱,2025年最近7天走势,今日出价,今日竞价,2SA102批发/采购报价,2SA102行情走势销售排行榜,2SA102报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2SA102

Ge PNP Drift

RF Amplifier IF Amplifier Features • High fαb

ETCList of Unclassifed Manufacturers

未分类制造商

PNP General Purpose Transistors

PNP General Purpose Transistors P/b Lead(Pb)-Free

WEITRON

PNP EPITAXIAL SILICON TRANSISTOR

DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES * Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC=-1A) * High speed switching time: tSTG=1.0μs(TYP) * Complement to UTC 2SC2655

UTC

友顺

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655

TOSHIBA

东芝

One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS

One Watt High Current PNP Transistor Features • Pb−Free Packages are Available*

ONSEMI

安森美半导体

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TEL

PNP Transistor Plastic-Encapsulate Transistors

FEATURES ● Power amplifier applications

SECOS

喜可士

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power amplifier applications

DAYA

大亚电器

TO-92L Plastic-Encapsulate Transistors (PNP)

TRANSISTOR (PNP) FEATURES Power amplifier applications

TGS

TRANSISTOR (PNP)

FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

TO-92MOD Plastic-Encap sulate Transistors

TRANSISTOR (PNP) FEATURES Power Amplifier Applications

JIANGSU

长电科技

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655

TOSHIBA

东芝

Silicon PNP transistor in a TO-92LM Plastic Package

Descriptions Silicon PNP transistor in a TO-92LM Plastic Package. Features Low collector saturation voltage high speed switching time, complementary pair with 2SC2655. Applications Power amplifier and switching applications.

FOSHAN

蓝箭电子

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES Power amplifier applications

KOOCHIN

灏展电子

TO-92MOD Plastic-Encapsulate Transistors

FEATURES Power Amplifier Applications

DGNJDZ

南晶电子

TO-92 Plastic-Encapsulate Transistors

Features Power mplifier pplications

DGNJDZ

南晶电子

One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS

One Watt High Current PNP Transistor Features • Pb−Free Packages are Available*

ONSEMI

安森美半导体

TO-92MOD Plastic-Encapsulate Transistors

FEATURES Power Amplifier Applications

DGNJDZ

南晶电子

PNP Epitaxial Transistor

VOLTAGE 50 Volts CURRENT 0.5 Ampere FEATURE * Small flat package. (FBPT-923) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-0.5A) * High speed switching time: tstg= 1.0uSec (typ.) * High saturation current capability. APPLICATION * Power amplifier .

CHENMKO

力勤

One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS

One Watt High Current PNP Transistor Features • Pb−Free Packages are Available*

ONSEMI

安森美半导体

One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS

One Watt High Current PNP Transistor Features • Pb−Free Packages are Available*

ONSEMI

安森美半导体

TO-92 Plastic-Encapsulate Transistors

Features Power mplifier pplications

DGNJDZ

南晶电子

TO-92MOD Plastic-Encapsulate Transistors

FEATURES Power Amplifier Applications

DGNJDZ

南晶电子

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High breakdown voltage • Large current capacity APPLICATIONS • For color TV sound output;converters Inverters applications

JMNIC

锦美电子

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High breakdown voltage • Large current capacity APPLICATIONS • For color TV sound output;converters Inverters applications

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • High breakdown voltage • Large current capacity APPLICATIONS • For color TV sound output;converters Inverters applications

ISC

无锡固电

Silicon PNP Epitaxial Planar Type

Features High transition frequency fT. Mini type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

KEXIN

科信电子

Silicon NPN epitaxial planer type(For high-frequency amplification)

Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t

Panasonic

松下

Silicon PNP epitaxial planer type

For high-frequency amplification Complementary to 2SC2295 ■ Features ● High transition frequency fT. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

Panasonic

松下

Silicon PNP Epitaxial

Application • Low frequency amplifier • Complementary pair with 2SC2396, 2SC2543 and 2SC2544

HitachiHitachi Semiconductor

日立日立公司

Silicon PNP Epitaxial

• Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308

HitachiHitachi Semiconductor

日立日立公司

TO-92MOD Plastic-Encapsulated Transistors

文件:61.7 Kbytes Page:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Power Amplifier Applications Power Switching Applications

文件:160.54 Kbytes Page:5 Pages

TOSHIBA

东芝

PNP Plastic Encapsulated Transistor

文件:427.02 Kbytes Page:3 Pages

SECOS

喜可士

SILICON PNP EPITAXIAL TRANSISTOR

文件:549.8 Kbytes Page:4 Pages

UTC

友顺

Bipolar Transistor

UTC

友顺

晶体管

JSCJ

长晶科技

One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS

ONSEMI

安森美半导体

SILICON PNP EPITAXIAL TRANSISTOR

文件:199.38 Kbytes Page:4 Pages

UTC

友顺

Power Amplifier Applications Power Switching Applications

文件:160.54 Kbytes Page:5 Pages

TOSHIBA

东芝

PNP Plastic Encapsulated Transistor

文件:427.02 Kbytes Page:3 Pages

SECOS

喜可士

SILICON PNP EPITAXIAL TRANSISTOR

文件:549.8 Kbytes Page:4 Pages

UTC

友顺

PNP Plastic Encapsulated Transistor

文件:427.02 Kbytes Page:3 Pages

SECOS

喜可士

封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS PNP 50V 2A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS PNP 50V 2A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ETC

知名厂家

SILICON PNP EPITAXIAL TRANSISTOR

文件:549.8 Kbytes Page:4 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:549.8 Kbytes Page:4 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:549.8 Kbytes Page:4 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:549.8 Kbytes Page:4 Pages

UTC

友顺

Silicon PNP transistor in a TO-251 Plastic Package.

文件:992.95 Kbytes Page:6 Pages

FOSHAN

蓝箭电子

PNP Plastic-Encapsulate Transistor

文件:491.1 Kbytes Page:2 Pages

MCC

SILICON PNP EPITAXIAL TRANSISTOR

文件:199.38 Kbytes Page:4 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:199.38 Kbytes Page:4 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:199.38 Kbytes Page:4 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:199.38 Kbytes Page:4 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:199.38 Kbytes Page:4 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:199.38 Kbytes Page:4 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:199.38 Kbytes Page:4 Pages

UTC

友顺

SILICON PNP EPITAXIAL TRANSISTOR

文件:199.38 Kbytes Page:4 Pages

UTC

友顺

2SA102产品属性

  • 类型

    描述

  • 型号

    2SA102

  • 功能描述

    Ge PNP Drift

更新时间:2025-10-31 13:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
UTC/友顺
24+
SOT-89
20000
十年沉淀唯有原装
UTC
23+
SOT-89
50000
全新原装正品现货,支持订货
长电/长晶
2021
TO-92L
10000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC
RHA1
SOT-89
28000
原装现货17377264928微信同号
UTC(友顺)
SOT-89(SOT-89-3)
5234
全新原装正品现货可开票
TOSHIBA
24+
TO-92
30000
原装正品公司现货,假一赔十!
TOSHIBA
23+
SOT-89
3000
原装正品假一罚百!可开增票!
TOSHIBA
15
TO-92
6000
原装正品现货
TOSHIBA
24+
TO-92
6000
全新原装深圳仓库现货有单必成
TOSHIBA
21+
TO-92
10000
只做原装,质量保证

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