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2SA102晶体管资料
- 2SA102别名:2SA102三极管、2SA102晶体管、2SA102晶体三极管 
- 2SA102生产厂家:日本松下公司 
- 2SA102制作材料:Ge-PNP 
- 2SA102性质:射频/高频放大 (HF)_中频放大 (ZF) 
- 2SA102封装形式:直插封装 
- 2SA102极限工作电压:40V 
- 2SA102最大电流允许值:0.01A 
- 2SA102最大工作频率:25MHZ 
- 2SA102引脚数:3 
- 2SA102最大耗散功率: 
- 2SA102放大倍数: 
- 2SA102图片代号:C-47 
- 2SA102vtest:40 
- 2SA102htest:25000000 
- 2SA102atest:0.01
- 2SA102wtest:0 
- 2SA102代换 2SA102用什么型号代替:AF124,AF125,AF126,AF127,AF200,2N3323,2N3324,2N3325,2SA218,2SA219,2SA220,2SA221,2SA222,2SA223,2SA224,2SA225,2SA226,2SA227,3AG95A, 
2SA102价格
参考价格:¥0.6985
型号:2SA1020RLRAG 品牌:ONSemi 备注:这里有2SA102多少钱,2025年最近7天走势,今日出价,今日竞价,2SA102批发/采购报价,2SA102行情走势销售排行榜,2SA102报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
| 2SA102 | Ge PNP Drift RF Amplifier IF Amplifier Features • High fαb | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
| PNP General Purpose Transistors PNP General Purpose Transistors P/b Lead(Pb)-Free | WEITRON | |||
| PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES * Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC=-1A) * High speed switching time: tSTG=1.0μs(TYP) * Complement to UTC 2SC2655 | UTC 友顺 | |||
| TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655 | TOSHIBA 东芝 | |||
| One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | |||
| Plastic-Encapsulated Transistors TRANSISTOR (PNP) FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | TEL | |||
| PNP Transistor Plastic-Encapsulate Transistors FEATURES ● Power amplifier applications | SECOS 喜可士 | |||
| TO-92L Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Power amplifier applications | DAYA 大亚电器 | |||
| TO-92L Plastic-Encapsulate Transistors (PNP) TRANSISTOR (PNP) FEATURES Power amplifier applications | TGS | |||
| TRANSISTOR (PNP) FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) Collector current ICM : -2 A Collector-base voltage V(BR)CBO : -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | |||
| TO-92MOD Plastic-Encap sulate Transistors TRANSISTOR (PNP) FEATURES Power Amplifier Applications | JIANGSU 长电科技 | |||
| TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655 | TOSHIBA 东芝 | |||
| Silicon PNP transistor in a TO-92LM Plastic Package Descriptions Silicon PNP transistor in a TO-92LM Plastic Package. Features Low collector saturation voltage high speed switching time, complementary pair with 2SC2655. Applications Power amplifier and switching applications. | FOSHAN 蓝箭电子 | |||
| TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES Power amplifier applications | KOOCHIN 灏展电子 | |||
| TO-92MOD Plastic-Encapsulate Transistors FEATURES Power Amplifier Applications | DGNJDZ 南晶电子 | |||
| TO-92 Plastic-Encapsulate Transistors Features Power mplifier pplications | DGNJDZ 南晶电子 | |||
| One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | |||
| TO-92MOD Plastic-Encapsulate Transistors FEATURES Power Amplifier Applications | DGNJDZ 南晶电子 | |||
| PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 Ampere FEATURE * Small flat package. (FBPT-923) * Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-0.5A) * High speed switching time: tstg= 1.0uSec (typ.) * High saturation current capability. APPLICATION * Power amplifier . | CHENMKO 力勤 | |||
| One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | |||
| One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* | ONSEMI 安森美半导体 | |||
| TO-92 Plastic-Encapsulate Transistors Features Power mplifier pplications | DGNJDZ 南晶电子 | |||
| TO-92MOD Plastic-Encapsulate Transistors FEATURES Power Amplifier Applications | DGNJDZ 南晶电子 | |||
| TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655 | TOSHIBA 东芝 | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • High breakdown voltage • Large current capacity APPLICATIONS • For color TV sound output;converters Inverters applications | JMNIC 锦美电子 | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • High breakdown voltage • Large current capacity APPLICATIONS • For color TV sound output;converters Inverters applications | SAVANTIC | |||
| Silicon PNP Power Transistors DESCRIPTION • With TO-126 package • High breakdown voltage • Large current capacity APPLICATIONS • For color TV sound output;converters Inverters applications | ISC 无锡固电 | |||
| Silicon PNP Epitaxial Planar Type Features High transition frequency fT. Mini type package,allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. | KEXIN 科信电子 | |||
| Silicon NPN epitaxial planer type(For high-frequency amplification) Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1022 ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t | Panasonic 松下 | |||
| Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 ■ Features ● High transition frequency fT. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. | Panasonic 松下 | |||
| Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2396, 2SC2543 and 2SC2544 | HitachiHitachi Semiconductor 日立日立公司 | |||
| Silicon PNP Epitaxial • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 | HitachiHitachi Semiconductor 日立日立公司 | |||
| TO-92MOD Plastic-Encapsulated Transistors 文件:61.7 Kbytes Page:1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
| Power Amplifier Applications Power Switching Applications 文件:160.54 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
| PNP Plastic Encapsulated Transistor 文件:427.02 Kbytes Page:3 Pages | SECOS 喜可士 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:549.8 Kbytes Page:4 Pages | UTC 友顺 | |||
| Bipolar Transistor | UTC 友顺 | |||
| 晶体管 | JSCJ 长晶科技 | |||
| One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS | ONSEMI 安森美半导体 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:199.38 Kbytes Page:4 Pages | UTC 友顺 | |||
| Power Amplifier Applications Power Switching Applications 文件:160.54 Kbytes Page:5 Pages | TOSHIBA 东芝 | |||
| PNP Plastic Encapsulated Transistor 文件:427.02 Kbytes Page:3 Pages | SECOS 喜可士 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:549.8 Kbytes Page:4 Pages | UTC 友顺 | |||
| PNP Plastic Encapsulated Transistor 文件:427.02 Kbytes Page:3 Pages | SECOS 喜可士 | |||
| 封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS PNP 50V 2A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
| 封装/外壳:TO-226-3,TO-92-3 长体 包装:散装 描述:TRANS PNP 50V 2A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:549.8 Kbytes Page:4 Pages | UTC 友顺 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:549.8 Kbytes Page:4 Pages | UTC 友顺 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:549.8 Kbytes Page:4 Pages | UTC 友顺 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:549.8 Kbytes Page:4 Pages | UTC 友顺 | |||
| Silicon PNP transistor in a TO-251 Plastic Package. 文件:992.95 Kbytes Page:6 Pages | FOSHAN 蓝箭电子 | |||
| PNP Plastic-Encapsulate Transistor 文件:491.1 Kbytes Page:2 Pages | MCC | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:199.38 Kbytes Page:4 Pages | UTC 友顺 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:199.38 Kbytes Page:4 Pages | UTC 友顺 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:199.38 Kbytes Page:4 Pages | UTC 友顺 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:199.38 Kbytes Page:4 Pages | UTC 友顺 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:199.38 Kbytes Page:4 Pages | UTC 友顺 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:199.38 Kbytes Page:4 Pages | UTC 友顺 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:199.38 Kbytes Page:4 Pages | UTC 友顺 | |||
| SILICON PNP EPITAXIAL TRANSISTOR 文件:199.38 Kbytes Page:4 Pages | UTC 友顺 | 
2SA102产品属性
- 类型描述 
- 型号2SA102 
- 功能描述Ge PNP Drift 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
| UTC/友顺 | 24+ | SOT-89 | 20000 | 十年沉淀唯有原装 | |||
| UTC | 23+ | SOT-89 | 50000 | 全新原装正品现货,支持订货 | |||
| 长电/长晶 | 2021 | TO-92L | 10000 | 一级代理,专注军工、汽车、医疗、工业、新能源、电力 | |||
| UTC | RHA1 | SOT-89 | 28000 | 原装现货17377264928微信同号 | |||
| UTC(友顺) | SOT-89(SOT-89-3) | 5234 | 全新原装正品现货可开票 | ||||
| TOSHIBA | 24+ | TO-92 | 30000 | 原装正品公司现货,假一赔十! | |||
| TOSHIBA | 23+ | SOT-89 | 3000 | 原装正品假一罚百!可开增票! | |||
| TOSHIBA | 15 | TO-92 | 6000 | 原装正品现货 | |||
| TOSHIBA | 24+ | TO-92 | 6000 | 全新原装深圳仓库现货有单必成 | |||
| TOSHIBA | 21+ | TO-92 | 10000 | 只做原装,质量保证 | 
2SA102芯片相关品牌
2SA102规格书下载地址
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- 2SA1001
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2SA102数据表相关新闻
- 2SA1037AKT146Q- 2SA1037AKT146Q 2023-5-26
- 2SA1012G-TO252R-R-TG_UTC代理商- 2SA1012G-TO252R-R-TG_UTC代理商 2023-2-21
- 2SA1015G-TO92K-BL-TG_UTC代理商- 2SA1015G-TO92K-BL-TG_UTC代理商 2023-2-16
- 2SA1015-Y-AP(原厂授权中国分销商)- 主要参数: 分立半导体产品 电流 - 集电极(Ic)(最大值): 150mA 电压 - 集射极击穿(最大值): 50V 电流(最大值) :100nA(ICBO) DC 电流增益(hFE)(最小值): 120 功率 - 最大值: 400MW 频率 - 跃迁: 80MHz 工作温度 :-55°C ~ 125°C 安装类型: 通孔 封装: TO-226-3, TO-92-3 2020-3-6
- 2SA1036KT146R三极管进口原装现货- 2SA1036KT146R三极管进口原装现货 启动用表面安装型三极管 2019-8-15
- 2SA1036KT146R一级代理进口原装现货尽在-宇集芯电子- 2SA1036K T146R 2SA1036KT146R 2019-5-9
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