TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655

中等功率双极型晶体管

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS PNP 50V 2A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3 长体 包装：散装 描述：TRANS PNP 50V 2A TO92MOD 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

SILICON PNP EPITAXIAL TRANSISTOR

文件：199.38 Kbytes Page：4 Pages

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 μs (typ.) • Complementary to 2SC2655

PNP EPITAXIAL SILICON TRANSISTOR

DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES * Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC=-1A) * High speed switching time: tSTG=1.0μs(TYP) * Complement to UTC 2SC2655

PNP General Purpose Transistors

PNP General Purpose Transistors P/b Lead(Pb)-Free

One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE FOR PNP TRANSISTORS

One Watt High Current PNP Transistor Features • Pb−Free Packages are Available*

TO-92MOD Plastic-Encapsulated Transistors

文件：61.7 Kbytes Page：1 Pages